摘要:
A correlation sample of scanning probe microscope enable to detect correctly each force performing as a standard without influence of irregular data of surface of the sample. Photo-resist film is applied on surface of a silicon substrate, and the resist mask is patterned. Hollow portions having vertical wall face are formed at the silicon substrate by carrying out anisotropic etching using the resist mask for etching mask. After that, metal is deposited from upper side of resist mask by deposition method, the metal upper than the resist mask by lift off process is removed, and a correlation sample in which the metal is buried in the hollow portions of the silicon substrate is formed. Surface of the sample can be flattened by coating DLC film on surface of the correlation sample.
摘要:
A self-detecting type of SPM probe can eliminate influences of a leak current between piezo-resistors each other, between another piezo-resistors opposite to each other, or between the piezo-resistor and the other one, or of a carrier generated by irradiation of light thereto over the piezo-resistors by forming impurity diffusion layers each consisting of a conductive type (n− well regions) reverse to a conductive type of a semiconductor substrate (p-type silicon substrate) on each interface between each of the piezo-resistors and the semiconductor substrate respectively to insulate the elements from one another.
摘要:
A semiconductor strain sensor comprises a semiconductor cantilever probe having a free end and a surface portion for undergoing deformation due to a displacement of the free end. A Schottky junction is disposed on the surface portion of the semiconductor cantilever probe and is positioned to undergo a change in electrical characteristic in response to the deformation of the surface portion. The amount of displacement of the free end of the cantilever probe is detected on the basis of a change in the electrical characteristic of the Schottky junction.
摘要:
A microprobe has a cantilever having a first lever portion having a free end portion, a second lever portion having a front end portion from which the first lever portion projects, and a support portion for supporting the second lever portion. A piezoresistive element is disposed on the second lever portion for bending the second lever portion.
摘要:
A cantilever probe for scanning a sample surface comprises a cantilever having a free end and a fixed end. A first support section is disposed at the free end and extends along a first plane. A probe is formed on the first support section for scanning movement relative to the sample surface. A second support section is disposed at the fixed end and extends along a second plane different from the first plane. A beam section interconnects the first support member and the second support member to one another and extends along a third plane different from the first and second planes.
摘要:
A multiprobe device is provided for a scanning probe instrument and has a plurality of individually-selectable probe members for conducting scanning probe operations. The multiprobe has a plurality of cantilever probes supported by a support member. Each of the cantilevers is individually-selectable for use in conducting scanning probe operations, and each has a different resonance frequency from the others. In a preferred embodiment, portions of the respective cantilevers that are brought into contact with a sample to conduct scanning probe operations are arranged in a substantially linear configuration. A given one of the cantilevers is selected by vibrating the multiprobe at the resonance frequency of the given cantilever.
摘要:
A scanning probe apparatus and a self-exciting cantilever probe therefor are provided for measuring a characteristic of a sample by scanning a lever of the probe across the sample surface. The probe has a deflectable lever extending from a base and formed integrally therewith, and a resistive body provided on the lever to excite the lever in response to a periodic bias signal applied to the resistive body. In addition, the resistive body has a resistance value that varies in response to deflection of the lever so that the resistance of the resistive body may be monitored to detect deflection of the lever.
摘要:
The present invention provides a microprobe capable of simplifying constitution, capable of promoting measurement accuracy of sample face and capable of dispensing with alignment adjustment at each measurement and a scanning type probe apparatus using thereof. The present invention includes a low resolution cantilever portion supported by a support portion and integrally formed with heater laminating portions, heater portions formed at the heater laminating portions, piezoresistive elements provided at bending portions and a movable portion having a low resolution stylus and a high resolution cantilever portion supported by the support portion and integrally formed with piezoresistive elements provided at the bending portions and a movable portion having a high resolution stylus.
摘要:
To provide an SPM probe comprising an SPM probe having a piezoresistor and enable to measure surface voltage of a sample. An SPM probe forming a piezoresistor 20 has conductivity covering metal film 22 on a tip surface 12, and conductive layer 24 is wired from the metal film 22 so as to be one side of an electrode. By that, it is possible to measure interaction between the sample surface by detecting bending quantity of the SPM probe by the piezoresistor and the tip, and to measure voltage of the sample surface without using a detector needing complicated adjustment.
摘要:
A semiconductor distortion sensor comprises a flexible cantilever having a free end portion and a fixed end portion. A p-type region and an n-type region define a pn junction formed in a preselected region of the cantilever where stress-caused distortion occurs due to flexure of the cantilever upon displacement of the free end portion of the cantilever. When the free end portion of the cantilever is subjected to displacement, the cantilever is flexed and the amount of displacement of the free end portion of the cantilever is detected on the basis of a change in an electrical characteristic of the pn junction.