-
公开(公告)号：US07995625B2
公开(公告)日：2011-08-09
申请号：US12499069
申请日：2009-07-07
Applicant: Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
Inventor： Young Ahn Leem , Jung-Ho Song , Kisoo Kim , Gyungock Kim
CPC classification number: H01S5/026 , H01S5/021 , H01S5/0215 , H01S5/0655 , H01S5/1014 , H01S5/1025 , H01S5/1032 , H01S5/1064 , H01S5/125
Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.
Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。
-
2.发明申请MASK PATTERN FOR SELECTIVE AREA GROWTH OF SEMICONDUCTOR LAYER AND SELECTIVE AREA GROWTH METHOD USING THE MASK PATTERN FOR SEMICONDUCTOR LAYER 审中-公开半导体层的选择区生长掩模图和使用半导体层的掩模图案的选择区生长方法公开(公告)号：US20100081225A1
公开(公告)日：2010-04-01
申请号：US12517357
申请日：2007-10-16
Applicant: Jung-Ho Song , Kisoo Kim , Gyungock Kim
Inventor： Jung-Ho Song , Kisoo Kim , Gyungock Kim
CPC classification number: H01L21/02543 , H01L21/02546 , H01L21/02636 , H01L21/02639
Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.
Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。
-
公开(公告)号：US07924492B2
公开(公告)日：2011-04-12
申请号：US12374261
申请日：2007-04-24
Applicant: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
Inventor： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
IPC: G02F1/07
CPC classification number: G02F1/025 , G02F2203/50 , G11C13/04
Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.
Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。
-
4.发明授权Photoelectric device using PN diode and silicon integrated circuit (IC) including the photoelectric device 失效光电器件采用PN二极管和硅集成电路（IC），包括光电器件公开(公告)号：US08346026B2
公开(公告)日：2013-01-01
申请号：US12517802
申请日：2007-08-07
Applicant: Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
Inventor： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
CPC classification number: H01L31/12 , H01L27/144
Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。
-
5.发明申请PHOTOELECTRIC DEVICE USING PN DIODE AND SILICON INTEGRATED CIRCUIT (IC) INCLUDING THE PHOTOELECTRIC DEVICE 失效使用包括光电装置的PN二极管和硅集成电路（IC）的光电装置公开(公告)号：US20100002978A1
公开(公告)日：2010-01-07
申请号：US12517802
申请日：2007-08-07
Applicant: Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
Inventor： Jeong-Woo Park , Gyungock Kim , Young-Ahn Leem , Hyun-Soo Kim , Bongki Mheen
CPC classification number: H01L31/12 , H01L27/144
Abstract: Provided are a photoelectric device using a PN diode and a silicon integrated circuit (IC) including the photoelectric device. The photoelectric device includes: a substrate; and an optical waveguide formed as a PN diode on the substrate, wherein a junction interface of the PN diode is formed in a direction in which light advances; and an electrode applying a reverse voltage to the PN diode, wherein N-type and P-type semiconductors of the PN diode are doped at high concentrations and the doping concentration of the N-type semiconductor is higher than or equal to that of the P-type semiconductor.
Abstract translation: 提供了使用PN二极管的光电装置和包括光电装置的硅集成电路（IC）。 光电装置包括：基板; 以及在所述衬底上形成为PN二极管的光波导，其中所述PN二极管的结界面沿光前进的方向形成; 以及向PN二极管施加反向电压的电极，其中PN二极管的N型和P型半导体以高浓度掺杂，并且N型半导体的掺杂浓度高于或等于P 型半导体。
-
Patent Agency Ranking
公开(公告)号：US20090207472A1
公开(公告)日：2009-08-20
申请号：US12374261
申请日：2007-04-24
Applicant: Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
Inventor： Hyun-Soo Kim , Jeong-Woo Park , Bongki Mheen , Young-Ahn Leem , Gyungock Kim
IPC: G02F1/015 , H01L29/786
CPC classification number: G02F1/025 , G02F2203/50 , G11C13/04
Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.
Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。
-
公开(公告)号：US08859319B2
公开(公告)日：2014-10-14
申请号：US13612736
申请日：2012-09-12
Applicant: Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
Inventor： Sang Hoon Kim , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC: H01L31/18
CPC classification number: H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。
-
8.发明授权Photonics chip with efficient optical alignment and bonding and optical apparatus including the same 有权光子芯片具有高效的光学对准和粘合以及包括其的光学设备公开(公告)号：US08615149B2
公开(公告)日：2013-12-24
申请号：US13190403
申请日：2011-07-25
Applicant: Do Won Kim , Gyungock Kim , JunYeong Lee
Inventor： Do Won Kim , Gyungock Kim , JunYeong Lee
CPC classification number: G02B6/4292 , G02B6/3644 , G02B6/3652 , G02B6/3885
Abstract: Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate.
Abstract translation: 提供了一种光子学芯片和包括其的光学装置。 芯片可以包括基板，光波导，光耦合器和多个对准单元。 光波导形成在基板上。 光耦合器形成在光波导处。 对准单元对准在衬底上固定耦合到光耦合器的至少一个光纤的光连接器。
-
公开(公告)号：US20130156370A1
公开(公告)日：2013-06-20
申请号：US13620560
申请日：2012-09-14
Applicant: Do Won Kim , Gyungock Kim
Inventor： Do Won Kim , Gyungock Kim
CPC classification number: G02B6/305 , G02B6/1228 , G02B2006/12061
Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.
Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。
-
公开(公告)号：US20120126357A1
公开(公告)日：2012-05-24
申请号：US13284818
申请日：2011-10-28
Applicant: Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
Inventor： Sang Hoon KIM , Gyungock Kim , In Gyoo Kim , JiHo Joo , Ki Seok Jang
IPC: H01L31/102 , H01L31/18
CPC classification number: H01L31/102 , H01L31/18
Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.
Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。
-
-
-
-
-
-
-
-
-
Search Results
70
records
(took 0.024 seconds)
