公开(公告)号：US20100081225A1

公开(公告)日：2010-04-01

申请号：US12517357

申请日：2007-10-16

Applicant: Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01L33/30 ,  B05C11/00 ,  H01L21/20

CPC classification number: H01L21/02543 ,  H01L21/02546 ,  H01L21/02636 ,  H01L21/02639

Abstract: Provided is a mask pattern for selective area growth of a semiconductor layer and a selective area growth method for a semiconductor layer for independently controlling a growth rate and a strain of the semiconductor layer. The selective area growth method includes: forming a plurality of pairs of first mask patterns, the first mask patterns in each pair including a first open area therebetween, the first open area having a width that is wider than a distance causing overgrowth of the semiconductor layer, the pairs of the first mask patterns repeatedly arranged with a period P therebetween; wherein controlling a growth rate and a strain of the semiconductor layer formed on the first open area by adjusting the period P.

Abstract translation: 提供了用于半导体层的选择性区域生长的掩模图案和用于独立地控制半导体层的生长速率和应变的半导体层的选择区域生长方法。 选择区域生长方法包括：形成多对第一掩模图案，每对中的第一掩模图案包括其间的第一开口区域，第一开口区域的宽度比导致半导体层过度生长的距离宽 ，所述第一掩模图案对以其间的周期P重复布置; 其中通过调整周期P来控制形成在第一开放区域上的半导体层的生长速率和应变。

公开(公告)号：US07995625B2

公开(公告)日：2011-08-09

申请号：US12499069

申请日：2009-07-07

Applicant: Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

Inventor： Young Ahn Leem ,  Jung-Ho Song ,  Kisoo Kim ,  Gyungock Kim

IPC: H01S3/098 ,  H01S3/03 ,  H01S3/082

CPC classification number: H01S5/026 ,  H01S5/021 ,  H01S5/0215 ,  H01S5/0655 ,  H01S5/1014 ,  H01S5/1025 ,  H01S5/1032 ,  H01S5/1064 ,  H01S5/125

Abstract: Provided is a resonator of a hybrid laser diode. The resonator includes: a substrate including a semiconductor layer where a hybrid waveguide, a multi-mode waveguide, and a single mode waveguide are connected in series; a compound semiconductor waveguide, provided on the hybrid waveguide of the semiconductor layer, having a tapered coupling structure at one end of the compound semiconductor waveguide, the tapered coupling structure overlapping the multi-mode waveguide partially; and a reflection part provided on one end of the single mode waveguide. The multi-mode waveguide has a narrower width than the hybrid waveguide and the single mode waveguide has a narrower width than the multi-mode waveguide.

Abstract translation: 提供了一种混合激光二极管的谐振器。 谐振器包括：包括混合波导，多模波导和单模波导串联连接的半导体层的基板; 复合半导体波导，设置在半导体层的混合波导上，在化合物半导体波导的一端具有锥形耦合结构，锥形耦合结构部分地与多模波导重叠; 以及设置在单模波导的一端的反射部。 多模波导具有比混合波导窄的宽度，并且单模波导具有比多模波导窄的宽度。

公开(公告)号：US08859319B2

公开(公告)日：2014-10-14

申请号：US13612736

申请日：2012-09-12

Applicant: Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon Kim ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/18

CPC classification number: H01L31/1804 ,  G02B6/12004 ,  G02B6/131 ,  H01L31/02327 ,  H01L31/103 ,  H01L31/1037 ,  H01L31/109 ,  Y02E10/547 ,  Y02P70/521

Abstract: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.

Abstract translation: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层，在半导体层中形成沟槽，在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层，以及使第一和第二单晶 层和半导体层以形成第一单晶图案，第二单晶图案和光波导。

公开(公告)号：US08615149B2

公开(公告)日：2013-12-24

申请号：US13190403

申请日：2011-07-25

Applicant: Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

Inventor： Do Won Kim ,  Gyungock Kim ,  JunYeong Lee

IPC: G02B6/00 ,  G02B6/12 ,  G02B6/36 ,  H01R43/16

CPC classification number: G02B6/4292 ,  G02B6/3644 ,  G02B6/3652 ,  G02B6/3885

Abstract: Provided are a photonics chip and an optical apparatus including the same. The chip may include a substrate, an optical waveguide, an optical coupler, and a plurality of alignment units. The optical waveguide is formed on the substrate. The optical coupler is formed at the optical waveguide. The alignment units align an optical connector which fixes at least one optical fiber coupled to the optical coupler, on the substrate.

Abstract translation: 提供了一种光子学芯片和包括其的光学装置。 芯片可以包括基板，光波导，光耦合器和多个对准单元。 光波导形成在基板上。 光耦合器形成在光波导处。 对准单元对准在衬底上固定耦合到光耦合器的至少一个光纤的光连接器。

公开(公告)号：US20130156370A1

公开(公告)日：2013-06-20

申请号：US13620560

申请日：2012-09-14

Applicant: Do Won Kim ,  Gyungock Kim

Inventor： Do Won Kim ,  Gyungock Kim

IPC: G02B6/12 ,  G02B6/26

CPC classification number: G02B6/305 ,  G02B6/1228 ,  G02B2006/12061

Abstract: Provided are optical coupling devices and silicon photonics chips having the same. the optical coupling device may include a lower layer having a first region and a second region, a first core layer disposed on the lower layer, the first core layer including first and second waveguides disposed on the first and second regions, respectively, a clad layer covering the first waveguide, and a second core layer interposed between the clad layer and the lower layer to cover the second waveguide. The second waveguide has a width decreasing with increasing distance from the first region and a vertical thickness greater than that of the first waveguide.

Abstract translation: 提供了具有其的光耦合器件和硅光子芯片。 光耦合装置可以包括具有第一区域和第二区域的下层，设置在下层上的第一芯层，第一芯层分别包括设置在第一和第二区域上的第一和第二波导，包层 覆盖第一波导，以及插入在包层和下层之间以覆盖第二波导的第二芯层。 第二波导的宽度随着距离第一区域的距离增加而减小，并且垂直厚度大于第一波导的垂直厚度。

公开(公告)号：US20120126357A1

公开(公告)日：2012-05-24

申请号：US13284818

申请日：2011-10-28

Applicant: Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

Inventor： Sang Hoon KIM ,  Gyungock Kim ,  In Gyoo Kim ,  JiHo Joo ,  Ki Seok Jang

IPC: H01L31/102 ,  H01L31/18

CPC classification number: H01L31/102 ,  H01L31/18

Abstract: Provided are light detection devices and methods of manufacturing the same. The light detection device includes a first conductive pattern on a surface of a substrate, an insulating pattern on the substrate and having an opening exposing at least a portion of the first conductive pattern, a light absorbing layer filling the opening of the insulating pattern and having a top surface disposed at a level substantially higher than a top surface of the insulating pattern, a second conductive pattern on the light absorbing layer, and connecting terminals electrically connected to the first and second conductive patterns, respectively.

Abstract translation: 提供了光检测装置及其制造方法。 光检测装置包括在基板的表面上的第一导电图案，在基板上的绝缘图案，并且具有露出第一导电图案的至少一部分的开口，填充绝缘图案的开口的光吸收层，并且具有 设置在基本上高于绝缘图案的顶表面的高度的顶表面，在光吸收层上的第二导电图案，以及分别电连接到第一和第二导电图案的连接端子。

公开(公告)号：US08180184B2

公开(公告)日：2012-05-15

申请号：US12504607

申请日：2009-07-16

Applicant: Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

Inventor： Jeong Woo Park ,  Jongbum You ,  Gyungock Kim

IPC: G02F1/035

CPC classification number: G02F1/025 ,  G02F2001/0156 ,  G02F2201/063 ,  G02F2201/12 ,  G02F2202/105 ,  G02F2202/32

Abstract: An absorption modulator is provided. The absorption modulator includes a substrate, an insulation layer disposed on the substrate, and a waveguide having a P-I-N diode structure on the insulation layer. Absorptance of an intrinsic region in the P-I-N diode structure is varied when modulating light inputted to the waveguide. The absorption modulator obtains the improved characteristics, such as high speed, low power consumption, and small size, because it greatly reduces the cross-sectional area of the P-I-N diode structure.

Abstract translation: 提供吸收调制器。 吸收调制器包括衬底，设置在衬底上的绝缘层和在绝缘层上具有P-I-N二极管结构的波导。 当调制输入到波导的光时，P-I-N二极管结构中的本征区域的吸收变化。 吸收调制器由于大大降低了P-I-N二极管结构的截面面积而获得了高速，低功耗，小尺寸等改进的特性。

公开(公告)号：US20110135265A1

公开(公告)日：2011-06-09

申请号：US12842287

申请日：2010-07-23

Applicant: Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

Inventor： Sahnggi PARK ,  Kap-Joong Kim ,  Gyungock Kim

IPC: G02B6/10 ,  C23F1/00

CPC classification number: G02B6/13

Abstract: Provided are a method of forming a waveguide facet and a photonics device using the method. The method includes forming at least one optical device die including waveguides on a substrate, forming at least one trench in a lower surface of the substrate, and cleaving the substrate to form facets of the waveguides over the trench. The trench is formed along a direction crossing the waveguides under the waveguides.

Abstract translation: 提供了使用该方法形成波导面和光子器件的方法。 所述方法包括在衬底上形成至少一个包括波导的光学器件裸片，在衬底的下表面中形成至少一个沟槽，并且切割衬底以在沟槽上形成波导的刻面。 沿着与波导下方的波导交叉的方向形成沟槽。

公开(公告)号：US07924492B2

公开(公告)日：2011-04-12

申请号：US12374261

申请日：2007-04-24

Applicant: Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

Inventor： Hyun-Soo Kim ,  Jeong-Woo Park ,  Bongki Mheen ,  Young-Ahn Leem ,  Gyungock Kim

IPC: G02F1/07

CPC classification number: G02F1/025 ,  G02F2203/50 ,  G11C13/04

Abstract: Provided is an optical device having an edge effect with improved phase shift and propagation loss of light without decreasing the dynamic characteristics of the optical device. The optical device includes a first semiconductor layer which is doped with a first type of conductive impurities, and has a recessed groove in an upper portion thereof; a gate insulating layer covering the groove and a portion of the first semiconductor layer; and a second semiconductor layer which covers an upper surface of the gate insulating layer and is doped with a second type of conductive impurities opposite to the first type of conductive impurities.

Abstract translation: 提供一种具有边缘效应的光学器件，具有改善的相移和光的传播损耗，而不会降低光学器件的动态特性。 光学器件包括掺杂有第一类导电杂质的第一半导体层，并且在其上部具有凹槽; 覆盖所述沟槽和所述第一半导体层的一部分的栅极绝缘层; 以及覆盖所述栅极绝缘层的上表面并且掺杂有与所述第一类型的导电杂质相反的第二类导电杂质的第二半导体层。

公开(公告)号：US20100193824A1

公开(公告)日：2010-08-05

申请号：US12760366

申请日：2010-04-14

Applicant: Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

Inventor： Hyun Tak KIM ,  Doo Hyeb Youn ,  Byung Gyu Chae ,  Kwang Yong Kang ,  Yong Sik Lim ,  Gyungock Kim ,  Sunglyul Maeng ,  Seong Hyun Kim

IPC: H01L33/00 ,  H01L33/40

CPC classification number: H01L45/04 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/14 ,  H01L45/146 ,  H01L45/147 ,  H01L45/148 ,  H01L45/1625

Abstract: Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.

Abstract translation: 提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的孔级中的孔，以及设置在第二电极层上的第二电极层 突变MIT半导体有机或无机材料层。 通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。