PHOTOVOLTAIC DEVICE THROUGH LATERAL CRYSTALLIZATION PROCESS AND FABRICATION METHOD THEREOF
    1.
    发明申请
    PHOTOVOLTAIC DEVICE THROUGH LATERAL CRYSTALLIZATION PROCESS AND FABRICATION METHOD THEREOF 审中-公开
    通过横向晶体化方法制造的光电器件及其制造方法

    公开(公告)号:US20100229912A1

    公开(公告)日:2010-09-16

    申请号:US12293749

    申请日:2008-01-22

    IPC分类号: H01L31/042 H01L31/18

    摘要: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof.The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.

    摘要翻译: 本发明涉及通过横向结晶方法的光电器件及其制造方法,特别涉及一种高效率太阳能电池组件及其制造方法。 本发明包括在第一基板上形成有非晶硅层的第一太阳能电池,在第二基板上形成有微晶硅半导体层的第二太阳能电池以及与第一太阳能电池和第二太阳能电池接合的接合层, 可以获得高效率,低制造成本,高产品特性和高可靠性的太阳能电池。

    THIN-FILM SOLAR CELL AND FABRICATION METHOD THEREOF
    2.
    发明申请
    THIN-FILM SOLAR CELL AND FABRICATION METHOD THEREOF 审中-公开
    薄膜太阳能电池及其制造方法

    公开(公告)号:US20090242018A1

    公开(公告)日:2009-10-01

    申请号:US12158028

    申请日:2007-04-11

    摘要: The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.

    摘要翻译: 薄膜太阳能电池及其制造方法技术领域本发明涉及薄膜太阳能电池及其制造方法,所述太阳能电池具有玻璃基板,透明导电氧化物,多结太阳能电池层和电极层的结构,其中,第一 处于多结的太阳能电池层和第二太阳能电池层并联电连接,并联连接的一个或多个单元电池被串联电连接。 根据本发明,具有以具有不同特性的两个太阳能电池层并联连接的结构的单位电池的薄膜太阳能电池,并且具有将多个电池单元串联连接的结构的薄膜太阳能电池 可以实现比具有多个太阳能电池层串联连接的结构的薄膜太阳能电池更高的输出和效率。

    THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    4.
    发明申请
    THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 失效
    薄膜太阳能电池及其制造方法

    公开(公告)号:US20080264478A1

    公开(公告)日:2008-10-30

    申请号:US12035927

    申请日:2008-02-22

    IPC分类号: H01L31/00

    摘要: A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel.The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.

    摘要翻译: 本发明的薄膜太阳能电池包括:串联连接多个包含光电转换层的单电池的第一太阳能电池层; 包括光电转换层的多个单元电池串联连接的第二太阳能电池层,其具有与第一太阳能电池层不同的带隙能量和与第一太阳能电池层重合的阈值电压; 以及并联连接第一太阳能电池层和第二太阳能电池层的电极连接器。 本发明的薄膜太阳能电池提供一种太阳能电池结构及其制造方法,其能够通过增加由具有所述太阳能电池层的太阳能电池层形成的薄膜太阳能电池的最大输出而提高效率 不同的特点。

    HIGH EFFICIENCY SOLAR CELL AND MANUFACTURING METHOD THEREOF
    5.
    发明申请
    HIGH EFFICIENCY SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    高效太阳能电池及其制造方法

    公开(公告)号:US20100089449A1

    公开(公告)日:2010-04-15

    申请号:US12308713

    申请日:2007-07-03

    摘要: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.

    摘要翻译: 本发明涉及一种高效太阳能电池及其制造方法。 本发明的高效太阳能电池包括:包含单晶硅基pn薄膜的下部太阳能电池层; 上部太阳能电池层,堆叠在下部太阳能电池层的上部并且包括非晶硅基pin薄膜; 以及形成在上部太阳能电池层的上部以接收阳光的玻璃基板。 根据本发明,具有可以制造低成本的高效率太阳能电池的效果。

    METHOD FOR MANUFACTURING A POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE USING HORIZONTAL METAL INDUCED CRYSTALLIZATION
    6.
    发明申请
    METHOD FOR MANUFACTURING A POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE USING HORIZONTAL METAL INDUCED CRYSTALLIZATION 失效
    使用水平金属诱导结晶制造聚晶硅光电器件的方法

    公开(公告)号:US20100093126A1

    公开(公告)日:2010-04-15

    申请号:US12520673

    申请日:2008-01-09

    IPC分类号: H01L21/322 H01L31/18

    摘要: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

    摘要翻译: 使用水平金属诱导结晶的多晶硅光电装置的制造方法包括在基板上形成至少一层非晶硅薄膜的步骤,形成深度小于或等于该深度的至少一个凹槽 的非晶硅薄膜上的薄膜,并且通过在凹槽的上部形成金属层来水平结晶非晶硅薄膜。 由于可以通过该方法调整光电器件的晶体形状和生长方向,所以可以在低温下形成用于改善电流的多晶硅薄膜。

    Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization
    7.
    发明授权
    Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization 失效
    使用横向金属诱导结晶制造多晶硅光伏器件的方法

    公开(公告)号:US08003423B2

    公开(公告)日:2011-08-23

    申请号:US12520673

    申请日:2008-01-09

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

    摘要翻译: 使用水平金属诱导结晶的多晶硅光电装置的制造方法包括在基板上形成至少一层非晶硅薄膜的步骤,形成深度小于或等于该深度的至少一个凹槽 的非晶硅薄膜上的薄膜,并且通过在凹槽的上部形成金属层来水平结晶非晶硅薄膜。 由于可以通过该方法调整光电器件的晶体形状和生长方向,所以可以在低温下形成用于改善电流的多晶硅薄膜。

    Mixer circuit having improved linearity and noise figure
    8.
    发明授权
    Mixer circuit having improved linearity and noise figure 失效
    混频器电路具有改善的线性度和噪声系数

    公开(公告)号:US07342432B2

    公开(公告)日:2008-03-11

    申请号:US10775234

    申请日:2004-02-11

    IPC分类号: G06G7/16

    摘要: A mixer circuit having improved linearity and noise figure is disclosed. The mixer circuit comprises an amplification unit having an input terminal and an output terminal, the amplification unit amplifying a signal applied to the input terminal to output it to the output terminal; a mixing unit having first, second and third input terminals, and first and second output terminals, the mixing unit mixing signals respectively applied to the first and second input terminals with a signal supplied to the third input terminal, to respectively output the mixed signals to the first and second output terminals; a capacitor connected between the output terminal of the amplification unit and the third input terminal of the mixing unit; and a current source for providing a specific quantity of current to the third input terminal of the mixing unit such that the quantity of current flowing through the third input terminal of the mixing unit is substantially larger than the quantity of current flowing through the amplification unit.

    摘要翻译: 公开了具有改进的线性和噪声系数的混频器电路。 所述混频电路包括具有输入端和输出端的放大单元,所述放大单元放大施加到所述输入端的信号,将其输出到所述输出端; 混合单元,具有第一,第二和第三输入端以及第一和第二输出端,所述混合单元将分别施加到第一和第二输入端的信号与提供给第三输入端的信号混合,分别输出混合信号 第一和第二输出端子; 连接在所述放大单元的输出端子和所述混频单元的第三输入端子之间的电容器; 以及电流源,用于向混合单元的第三输入端提供特定量的电流,使得流过混合单元的第三输入端的电流量大大地大于流过放大单元的电流量。

    Low noise amplifier
    9.
    发明授权
    Low noise amplifier 失效
    低噪声放大器

    公开(公告)号:US5926069A

    公开(公告)日:1999-07-20

    申请号:US822851

    申请日:1997-03-24

    摘要: A low noise amplifier includes an input matching means of an input stage and an output matching means of an output stage, a common source transistor and a common gate transistor serially connected between the input matching means and the output matching means, a first inductor connected between said common source transistor and common gate transistor a second inductor connected between the common point of said common source transistor and common gate transistor and the output stage of said common gate transistor. Therefore, the low noise amplifier allows the points of .GAMMA..sub.opt and G.sub.max to be closer to each other so that the noise and input gain simultaneous matching is performed, thereby improving the performance.

    摘要翻译: 低噪声放大器包括输入级的输入匹配装置和串联连接在输入匹配装置和输出匹配装置之间的输出级,公共源晶体管和公共栅极晶体管的输出匹配装置,第一电感器连接在 所述公共源晶体管和公共栅极晶体管连接在所述公共源极晶体管的公共点和公共栅极晶体管与所述公共栅极晶体管的输出级之间的第二电感器。 因此,低噪声放大器允许GAMMA opt和Gmax的点彼此更接近,从而执行噪声和输入增益同时匹配,从而提高性能。

    Self-calibrating apparatus and method in a mobile transceiver
    10.
    发明授权
    Self-calibrating apparatus and method in a mobile transceiver 有权
    移动收发器中的自校准装置和方法

    公开(公告)号:US07130589B2

    公开(公告)日:2006-10-31

    申请号:US10815445

    申请日:2004-04-01

    IPC分类号: H04B17/00 H03C1/62 H04Q7/20

    摘要: An apparatus and method for self-calibrating mismatching orthogonal signals and non-linearity of a circuit occurring in a mobile transceiver. For this, in a mobile terminal, a transmitter is used as a signal generator and a receiver is used as a response characteristic measurer. A base band processor calibrates mismatching signals and non-linearity in a reception side and a transmission side, based on a test signal received via the transmitter and a test signal received via the receiver.

    摘要翻译: 用于自校准错配正交信号和在移动收发机中发生的电路的非线性的装置和方法。 为此,在移动终端中,使用发射机作为信号发生器,并且使用接收机作为响应特性测量器。 基带处理器基于经由发送器接收的测试信号和经由接收器接收的测试信号来校准接收侧和发送侧的不匹配信号和非线性。