THIN-FILM SOLAR CELL AND FABRICATION METHOD THEREOF
    1.
    发明申请
    THIN-FILM SOLAR CELL AND FABRICATION METHOD THEREOF 审中-公开
    薄膜太阳能电池及其制造方法

    公开(公告)号:US20090242018A1

    公开(公告)日:2009-10-01

    申请号:US12158028

    申请日:2007-04-11

    摘要: The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.

    摘要翻译: 薄膜太阳能电池及其制造方法技术领域本发明涉及薄膜太阳能电池及其制造方法,所述太阳能电池具有玻璃基板,透明导电氧化物,多结太阳能电池层和电极层的结构,其中,第一 处于多结的太阳能电池层和第二太阳能电池层并联电连接,并联连接的一个或多个单元电池被串联电连接。 根据本发明,具有以具有不同特性的两个太阳能电池层并联连接的结构的单位电池的薄膜太阳能电池,并且具有将多个电池单元串联连接的结构的薄膜太阳能电池 可以实现比具有多个太阳能电池层串联连接的结构的薄膜太阳能电池更高的输出和效率。

    THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME
    3.
    发明申请
    THIN-FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME 失效
    薄膜太阳能电池及其制造方法

    公开(公告)号:US20080264478A1

    公开(公告)日:2008-10-30

    申请号:US12035927

    申请日:2008-02-22

    IPC分类号: H01L31/00

    摘要: A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel.The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.

    摘要翻译: 本发明的薄膜太阳能电池包括:串联连接多个包含光电转换层的单电池的第一太阳能电池层; 包括光电转换层的多个单元电池串联连接的第二太阳能电池层,其具有与第一太阳能电池层不同的带隙能量和与第一太阳能电池层重合的阈值电压; 以及并联连接第一太阳能电池层和第二太阳能电池层的电极连接器。 本发明的薄膜太阳能电池提供一种太阳能电池结构及其制造方法,其能够通过增加由具有所述太阳能电池层的太阳能电池层形成的薄膜太阳能电池的最大输出而提高效率 不同的特点。

    HIGH EFFICIENCY SOLAR CELL AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    HIGH EFFICIENCY SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    高效太阳能电池及其制造方法

    公开(公告)号:US20100089449A1

    公开(公告)日:2010-04-15

    申请号:US12308713

    申请日:2007-07-03

    摘要: The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.

    摘要翻译: 本发明涉及一种高效太阳能电池及其制造方法。 本发明的高效太阳能电池包括:包含单晶硅基pn薄膜的下部太阳能电池层; 上部太阳能电池层,堆叠在下部太阳能电池层的上部并且包括非晶硅基pin薄膜; 以及形成在上部太阳能电池层的上部以接收阳光的玻璃基板。 根据本发明,具有可以制造低成本的高效率太阳能电池的效果。

    PHOTOVOLTAIC DEVICE THROUGH LATERAL CRYSTALLIZATION PROCESS AND FABRICATION METHOD THEREOF
    5.
    发明申请
    PHOTOVOLTAIC DEVICE THROUGH LATERAL CRYSTALLIZATION PROCESS AND FABRICATION METHOD THEREOF 审中-公开
    通过横向晶体化方法制造的光电器件及其制造方法

    公开(公告)号:US20100229912A1

    公开(公告)日:2010-09-16

    申请号:US12293749

    申请日:2008-01-22

    IPC分类号: H01L31/042 H01L31/18

    摘要: The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof.The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.

    摘要翻译: 本发明涉及通过横向结晶方法的光电器件及其制造方法,特别涉及一种高效率太阳能电池组件及其制造方法。 本发明包括在第一基板上形成有非晶硅层的第一太阳能电池,在第二基板上形成有微晶硅半导体层的第二太阳能电池以及与第一太阳能电池和第二太阳能电池接合的接合层, 可以获得高效率,低制造成本,高产品特性和高可靠性的太阳能电池。

    THIN-FILM PHOTOVOLTAIC DEVICE MODULE AND FABRICATION METHOD THEREOF
    6.
    发明申请
    THIN-FILM PHOTOVOLTAIC DEVICE MODULE AND FABRICATION METHOD THEREOF 审中-公开
    薄膜光电器件模块及其制造方法

    公开(公告)号:US20100006135A1

    公开(公告)日:2010-01-14

    申请号:US12294259

    申请日:2008-01-09

    IPC分类号: H01L31/042 H01L31/18

    摘要: A photovoltaic device module and a fabrication method thereof are disclosed. There are provided a solar cell module structure effective to prevent the performance of the overall module from being degraded when photoelectric conversion efficiency of a specific portion cell is degraded in a solar cell module in which solar cells are integrated, and a fabrication method thereof. More particularly, there are provided a module structure having two terminal wirings, in which one of them is formed by selecting and connecting at least two unit cells from a plurality of unit cells electrically connected and the other is formed by selecting and connecting at least two unit cells differentiated from the said selected unit cells., and a fabrication method thereof.

    摘要翻译: 公开了一种光电器件模块及其制造方法。 提供了一种太阳能电池模块结构及其制造方法,该太阳能电池模块结构有效地防止了整个模块的性能在特定部分电池的光电转换效率在其中集成太阳能电池的太阳能电池模块中劣化时劣化。 更具体地,提供了一种具有两个端子布线的模块结构,其中一个端子布线通过从多个电连接的单元电池中选择和连接至少两个单元电池而形成,另一个通过选择和连接至少两个 从所述选择的单元电池区分的单元电池及其制造方法。

    THIN-FILM TYPE SOLAR CELL INCLUDING BY-PASS DIODE AND MANUFACTURING METHOD THEREOF
    7.
    发明申请
    THIN-FILM TYPE SOLAR CELL INCLUDING BY-PASS DIODE AND MANUFACTURING METHOD THEREOF 审中-公开
    薄膜型太阳能电池,包括旁路二极管及其制造方法

    公开(公告)号:US20090217966A1

    公开(公告)日:2009-09-03

    申请号:US12295712

    申请日:2007-09-03

    摘要: The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current.According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.

    摘要翻译: 本发明涉及一种包括旁路二极管的光电转换装置及其制造方法。 本发明的光电转换装置包括由至少一个单位太阳能电池构成的至少一个单元太阳能电池模块; 以及旁路太阳能电池模块,其包括电连接到所述单元太阳能电池以旁路电流的至少一个太阳能电池。 根据本发明,可以制造具有高光电转换效率的光电转换装置。 此外,光伏转换装置将作为下一个清洁能源对地球环境保护作出贡献,可以直接应用于私人设施,公共设施,军事设施等,创造巨大的经济价值。

    Thin-film type solar cell and manufacturing method thereof
    8.
    发明申请
    Thin-film type solar cell and manufacturing method thereof 审中-公开
    薄膜型太阳能电池及其制造方法

    公开(公告)号:US20090178710A1

    公开(公告)日:2009-07-16

    申请号:US12318818

    申请日:2009-01-08

    IPC分类号: H01L31/00 B05D5/12

    摘要: The present invention discloses a thin-film type solar cell including another upper transparent conductive layer between a silicon semiconductor layer and an upper transparent conductive layer, and a manufacturing method thereof. At this time, the silicon based semiconductor layer used may be formed of at least one amorphous silicon based (p/i/n) thin film or may be formed as a tandem type silicon based semiconductor layer formed of the amorphous silicon based (p/i/n) thin film, an intermediate transparent conductive layer, and a microcrystalline silicon based thin film.

    摘要翻译: 本发明公开了一种在硅半导体层和上部透明导电层之间具有另一上部透明导电层的薄膜型太阳能电池及其制造方法。 此时,所使用的硅基半导体层可以由至少一个非晶硅基(p / i / n)薄膜形成,或者可以形成为由非晶硅基(p / i / n)形成的串联型硅基半导体层, i / n)薄膜,中间透明导电层和微晶硅基薄膜。

    METHOD FOR MANUFACTURING A POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE USING HORIZONTAL METAL INDUCED CRYSTALLIZATION
    9.
    发明申请
    METHOD FOR MANUFACTURING A POLY-CRYSTAL SILICON PHOTOVOLTAIC DEVICE USING HORIZONTAL METAL INDUCED CRYSTALLIZATION 失效
    使用水平金属诱导结晶制造聚晶硅光电器件的方法

    公开(公告)号:US20100093126A1

    公开(公告)日:2010-04-15

    申请号:US12520673

    申请日:2008-01-09

    IPC分类号: H01L21/322 H01L31/18

    摘要: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

    摘要翻译: 使用水平金属诱导结晶的多晶硅光电装置的制造方法包括在基板上形成至少一层非晶硅薄膜的步骤,形成深度小于或等于该深度的至少一个凹槽 的非晶硅薄膜上的薄膜,并且通过在凹槽的上部形成金属层来水平结晶非晶硅薄膜。 由于可以通过该方法调整光电器件的晶体形状和生长方向,所以可以在低温下形成用于改善电流的多晶硅薄膜。

    Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization
    10.
    发明授权
    Method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization 失效
    使用横向金属诱导结晶制造多晶硅光伏器件的方法

    公开(公告)号:US08003423B2

    公开(公告)日:2011-08-23

    申请号:US12520673

    申请日:2008-01-09

    IPC分类号: H01L21/00

    摘要: A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.

    摘要翻译: 使用水平金属诱导结晶的多晶硅光电装置的制造方法包括在基板上形成至少一层非晶硅薄膜的步骤,形成深度小于或等于该深度的至少一个凹槽 的非晶硅薄膜上的薄膜,并且通过在凹槽的上部形成金属层来水平结晶非晶硅薄膜。 由于可以通过该方法调整光电器件的晶体形状和生长方向,所以可以在低温下形成用于改善电流的多晶硅薄膜。