摘要:
The present invention relates to a thin-film solar cell and a fabrication method thereof, the solar cell having a structure that a glass substrate, a transparent conductive oxide, a multi-junction solar cell layer and an electrode layer are stacked, wherein a first solar cell layer and a second solar cell layer, which are in a multi-junction, are electrically connected with each other in parallel, and one or more unit cells connected in parallel are grouped to be electrically connected with each other in series. According to the present invention, a thin-film solar cell having a unit cell in a structure that two solar cell layers having different characteristics are connected with each other in parallel, and having a structure that several unit cells are connected with each other in series, can achieve higher output and efficiency than a thin-film solar cell having a structure that several solar cell layers are connected in series.
摘要:
A thin-film solar cell having a first solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series; a second solar cell layer with a plurality of unit cells including a photoelectric conversion layer that are connected in series, and that has band gap energy different from the first solar cell layer and a threshold voltage coincident with the first solar cell layer; and an electrode connector, that connects the first solar cell layer with the second solar cell layer in parallel.
摘要:
A thin-film solar cell of the present invention comprises a first solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series; a second solar cell layer that a plurality of unit cells including a photoelectric conversion layer are connected in series, which has band gap energy being different from the first solar cell layer and a threshold voltage being coincident with the first solar cell layer; and an electrode connector, which connects the first solar cell layer with the second solar cell layer in parallel.The thin-film solar cell of the present invention provides a solar cell structure and a method of manufacturing the same, which is capable of increasing the efficiency by increasing the maximum output of the thin film solar cell formed of both the solar cell layers having the different characteristics.
摘要:
The present invention relates to a high efficiency solar cell and a manufacturing method thereof. The high efficiency solar cell of the present invention comprises a lower solar cell layer comprising a single crystalline silicon-based pn thin film; an upper solar cell layer stacked on the upper portion of the lower solar cell layer and comprising an amorphous silicon-based pin thin film; and a glass substrate formed on the upper portion of the upper solar cell layer to receive sunlight. According to the present invention, it has an effect that a low-cost high efficiency solar cell can be manufactured.
摘要:
The present invention relates to a photovoltaic device through a lateral crystallization process and a fabrication method thereof, and in particular to a high efficiency solar cell module and a fabrication method thereof.The present invention comprises a first solar cell having an amorphous silicon layer formed on a first substrate, a second solar cell having a microcrystalline silicon semiconductor layer formed on a second substrate, and a junction layer junctioning the first solar cell and the second solar cell, making it possible to obtain a solar cell with high efficiency, low fabricating costs, high product characteristic, and high reliability.
摘要:
A photovoltaic device module and a fabrication method thereof are disclosed. There are provided a solar cell module structure effective to prevent the performance of the overall module from being degraded when photoelectric conversion efficiency of a specific portion cell is degraded in a solar cell module in which solar cells are integrated, and a fabrication method thereof. More particularly, there are provided a module structure having two terminal wirings, in which one of them is formed by selecting and connecting at least two unit cells from a plurality of unit cells electrically connected and the other is formed by selecting and connecting at least two unit cells differentiated from the said selected unit cells., and a fabrication method thereof.
摘要:
The present invention relates to a photovoltaic conversion apparatus including a by-pass diode and a manufacturing method thereof. The photovoltaic conversion apparatus of the present invention comprises at least one unit solar cell module configured of at least one unit solar cell; and a by-pass solar cell module including at least one solar cell electrically connected to the unit solar cell to by-pass current.According to the present invention, a photovoltaic conversion apparatus having high photoelectric conversion efficiency can be manufactured. Also, the photovoltaic conversion apparatus will contribute to earths environmental conservation as the next clean energy source and can be directly applied to private facilities, public facilities, military facilities, etc., to create enormous economic value.
摘要:
The present invention discloses a thin-film type solar cell including another upper transparent conductive layer between a silicon semiconductor layer and an upper transparent conductive layer, and a manufacturing method thereof. At this time, the silicon based semiconductor layer used may be formed of at least one amorphous silicon based (p/i/n) thin film or may be formed as a tandem type silicon based semiconductor layer formed of the amorphous silicon based (p/i/n) thin film, an intermediate transparent conductive layer, and a microcrystalline silicon based thin film.
摘要翻译:本发明公开了一种在硅半导体层和上部透明导电层之间具有另一上部透明导电层的薄膜型太阳能电池及其制造方法。 此时,所使用的硅基半导体层可以由至少一个非晶硅基(p / i / n)薄膜形成,或者可以形成为由非晶硅基(p / i / n)形成的串联型硅基半导体层, i / n)薄膜,中间透明导电层和微晶硅基薄膜。
摘要:
A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.
摘要:
A method for manufacturing a poly-crystal silicon photovoltaic device using horizontal metal induced crystallization comprises the steps of forming at least one layer of an amorphous silicon thin film on a substrate, forming at least one groove of which depth is less than or equal to that of the thin film on the amorphous silicon thin film, and horizontally crystallizing the amorphous silicon thin film by forming a metal layer on an upper portion of the groove. Since a crystal shape and a growth direction of the photovoltaic device can be adjusted by the method, a poly-crystal silicon thin film for improving current flow can be formed at a low-temperature.