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公开(公告)号：US20230140016A1
公开(公告)日：2023-05-04
申请号：US18089708
申请日：2022-12-28
发明人： Shunpei YAMAZAKI , Kengo AKIMOTO , Atsushi UMEZAKI
IPC分类号： H01L27/12 , G02F1/1362 , H10K59/131 , H01L29/786
摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.
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公开(公告)号：US20230139527A1
公开(公告)日：2023-05-04
申请号：US18089703
申请日：2022-12-28
IPC分类号： G11C11/16 , G06F9/4401 , G06F21/57 , G11C5/14 , G11C11/402 , G11C11/404 , H10B12/00
摘要： The operation speed of a semiconductor device is improved. The semiconductor device includes a first memory region and a second memory region; in the semiconductor device, a first memory cell in the first memory region is superior to a second memory cell in the second memory region in data retention characteristics such as a large storage capacitance or a large channel length—channel width ratio (L/W) of a transistor. When the semiconductor device is used as a cache memory or a main memory device of a processor, the first memory region mainly stores a start-up routine and is not used as a work region for arithmetic operation, and the second memory region is used as a work region for arithmetic operation. The first memory region becomes an accessible region when the processor is booted, and the first memory region becomes an inaccessible region when the processor is in normal operation.
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公开(公告)号：US20230132746A1
公开(公告)日：2023-05-04
申请号：US18089199
申请日：2022-12-27
发明人： Ryota TAJIMA , Toshiyuki ISA , Akihiro CHIDA
IPC分类号： H01M10/42 , G01R31/367 , B60L58/18 , H01M10/48
摘要： A highly safe power storage system is provided. If n (n is an integer over or equal to three) secondary batteries are used in a vehicle such as an electric vehicle, a circuit configuration is used with which the condition of each secondary battery is monitored using an anomaly detection unit; and if an anomaly such as a micro-short circuit is detected, only the detected anomalous secondary battery is electrically separated from the charging system or the discharging system. At least one microcomputer monitors anomalies in n secondary batteries consecutively, selects the anomalous secondary battery or the detected secondary battery which causes an anomaly, and gives an instruction to bypass the secondary battery with each switch.
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公开(公告)号：US11637293B2
公开(公告)日：2023-04-25
申请号：US16892582
申请日：2020-06-04
发明人： Yumiko Yoneda , Takuya Miwa
IPC分类号： H01M6/10 , H01M4/1397 , H01M4/36 , H01M50/538 , H01M4/58 , H01M10/04 , H01M10/052 , H01M4/02 , H01M10/42 , H01M10/0525
摘要： A positive electrode active material includes a plurality of groups of particles. The plurality of groups of particles has a particle diameter of more than or equal to 300 nm and less than or equal to 3 μm. Each of the groups includes two or more particles. The two or more particles are each a lithium-containing complex phosphate including one or more of iron, nickel, manganese, and cobalt. The group of particles includes a first particle and a second particle each having a major diameter and a minor diameter in the upper surface when seen from a predetermined direction. The major diameters of the first and second particles are substantially parallel to each other. The major diameter of the first particle is two to six times larger than the minor diameter of the first particle and the minor diameter of the first particle is more than or equal to 20 nm and less than or equal to 130 nm.
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公开(公告)号：US11637263B2
公开(公告)日：2023-04-25
申请号：US16758999
申请日：2018-10-23
发明人： Nobuharu Ohsawa , Satoshi Seo
摘要： A light-emitting element having high emission efficiency is provided.
The light-emitting element includes a first organic compound, a second organic compound, and a third organic compound. The first organic compound has a function of converting triplet excitation energy into light emission. The second organic compound is preferably a TADF material. The third organic compound is a fluorescent compound. Light emitted from the light-emitting element is obtained from the third organic compound. Triplet excitation energy in a light-emitting layer is transferred to the third organic compound by reverse intersystem crossing caused by the second organic compound or through the first organic compound.-
公开(公告)号：US11637129B2
公开(公告)日：2023-04-25
申请号：US17172213
申请日：2021-02-10
发明人： Hiroyuki Miyake
IPC分类号： G09G3/3233 , G09G3/3275 , H01L27/06 , H01L33/62 , H01L27/12 , H01L27/32
摘要： An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.
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7.发明申请公开(公告)号：US20230124044A1
公开(公告)日：2023-04-20
申请号：US17819433
申请日：2022-08-12
IPC分类号： H01L51/00
摘要： A light-emitting device with high emission efficiency is provided. The light-emitting device includes at least a light-emitting layer between an anode and a cathode. The light-emitting layer contains a light-emitting substance, a first organic compound, and a second organic compound. The light-emitting substance is a substance that emits fluorescent light. The first organic compound has any one of an anthracene skeleton, a tetracene skeleton, a phenanthrene skeleton, a pyrene skeleton, a chrysene skeleton, a carbazole skeleton, a benzocarbazole skeleton, a dibenzocarbazole skeleton, a dibenzofuran skeleton, a benzonaphthofuran skeleton, a bisnaphthofuran skeleton, a dibenzothiophene skeleton, a benzonaphthothiophene skeleton, a bisnaphthothiophene skeleton, and a fluoranthene skeleton. The second organic compound has any one of a fluorenylamine skeleton, a spirobifluorenylamine skeleton, a dibenzofuranylamine skeleton, a carbazolamine skeleton, a benzocarbazolamine skeleton, a dibenzocarbazolamine skeleton, a dibenzofuranamine skeleton, a benzonaphthofuranamine skeleton, a bisnaphthofuranamine skeleton, a dibenzothiophenamine skeleton, a benzonaphthothiopheneamine skeleton, a bisnaphthothiopheneamine skeleton, and an arylamine skeleton.
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公开(公告)号：US11631702B2
公开(公告)日：2023-04-18
申请号：US17166020
申请日：2021-02-03
发明人： Satoshi Seo , Kaoru Hatano
摘要： A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor.
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公开(公告)号：US20230110947A1
公开(公告)日：2023-04-13
申请号：US17904015
申请日：2021-02-17
发明人： Shunpei YAMAZAKI , Yasuhiro JINBO , Yuji EGI , Tetsuya KAKEHATA
IPC分类号： C23C16/455 , C23C16/40 , C23C16/46
摘要： A novel deposition method of a metal oxide is provided. The deposition method includes a first step of supplying a first precursor to a chamber; a second step of supplying a second precursor to the chamber; a third step of supplying a third precursor to the chamber; and a fourth step of introducing an oxidizer into the chamber after the first step, the second step, and the third step. The first to third precursors are different kinds of precursors, and a substrate placed in the chamber in the first to fourth steps is heated to a temperature higher than or equal to 300° C. and lower than or equal to decomposition temperatures of the first to third precursors.
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公开(公告)号：US11626439B2
公开(公告)日：2023-04-11
申请号：US17582279
申请日：2022-01-24
发明人： Takayuki Ikeda , Naoto Kusumoto
IPC分类号： H01L27/146 , H01L27/12 , H01L29/786 , H01L29/78
摘要： An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.
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