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公开(公告)号:US12204212B2
公开(公告)日:2025-01-21
申请号:US18599770
申请日:2024-03-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Susumu Kawashima , Naoto Kusumoto
IPC: G02F1/1362 , G02F1/1368 , H01L27/12
Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.
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公开(公告)号:US11990502B2
公开(公告)日:2024-05-21
申请号:US16638825
申请日:2018-08-10
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Susumu Kawashima , Koji Kusunoki , Kazunori Watanabe , Kouhei Toyotaka , Naoto Kusumoto , Shunpei Yamazaki
IPC: H01L27/32 , G09G3/3275 , H10K50/11 , H10K59/121 , H10K59/131
CPC classification number: H10K59/1213 , G09G3/3275 , H10K50/11 , H10K59/1216 , H10K59/131 , G09G2300/0857 , G09G2310/0251 , G09G2310/0262
Abstract: To provide a display device capable of performing image processing. Each pixel is provided with a memory circuit in which desired correction data is retained. The correction data is generated by calculation in an external device and written to each pixel. The correction data is added to image data by capacitive coupling and supplied to a display element. Thus, the display element can display a corrected image. Through the correction, image upconversion can be performed, or image quality decreased because of variations in pixel transistor characteristics can be corrected.
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公开(公告)号:US11942497B2
公开(公告)日:2024-03-26
申请号:US18126533
申请日:2023-03-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takayuki Ikeda , Naoto Kusumoto
IPC: H01L27/146 , H01L27/12 , H01L29/78 , H01L29/786
CPC classification number: H01L27/14625 , H01L27/1207 , H01L27/1225 , H01L27/1229 , H01L27/14601 , H01L27/14612 , H01L27/14616 , H01L27/14623 , H01L27/14634 , H01L27/14636 , H01L27/14643 , H01L27/14689 , H01L27/1469 , H01L27/14692 , H01L29/78 , H01L29/7869 , H01L2224/80895 , H01L2224/80896
Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.
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公开(公告)号:US11935897B2
公开(公告)日:2024-03-19
申请号:US18205587
申请日:2023-06-05
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Susumu Kawashima , Naoto Kusumoto
IPC: G02F1/136 , G02F1/1362 , H01L27/12
CPC classification number: H01L27/1225 , G02F1/13624 , H01L27/124 , H01L27/1255
Abstract: A display device capable of performing proper display without image signal conversion is provided. In the case of high-resolution display, individual data is supplied to each pixel through a first signal line and a first transistor included in each pixel. In the case of low-resolution display, the same data is supplied to a plurality of pixels through a second signal line and a second transistor electrically connected to the plurality of pixels. When the number of image signals to be displayed is more than one and the image signals support different resolutions, display can be performed without up conversion or down conversion by switching an image signal supply path as described above.
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公开(公告)号:US11822198B2
公开(公告)日:2023-11-21
申请号:US17552641
申请日:2021-12-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Susumu Kawashima , Naoto Kusumoto
IPC: G09G3/36 , G02F1/1362 , G02F1/1333 , G09G3/3208 , G09F9/30 , G09G3/3233 , H10K59/00 , H10K59/65 , H10K59/131 , H10K59/121
CPC classification number: G02F1/136286 , G02F1/13338 , G09F9/30 , G09G3/3208 , G09G3/3233 , G09G3/3648 , H10K59/00 , H10K59/1213 , H10K59/1216 , H10K59/131 , H10K59/65 , G09G2310/0262
Abstract: A display device capable of improving the image quality is provided. The display device includes a pixel in which a first node, a second node, a third node, and a display element are provided, and the same image data is written to the first node and the second node first. Then, at the same time when the image data is read from the second node to the third node, the image data is added to the image data in the first node by capacitive coupling. This operation enables a data potential higher than or equal to the output voltage of a source driver to be supplied to the display element.
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公开(公告)号:US11798492B2
公开(公告)日:2023-10-24
申请号:US17893337
申请日:2022-08-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Susumu Kawashima , Naoto Kusumoto
IPC: G09G3/3275 , G09G3/36 , G02F1/1368 , G09G3/3225 , H01L27/12 , H01L29/786 , H10K59/121
CPC classification number: G09G3/3275 , G09G3/3688 , G02F1/1368 , G09G3/3225 , G09G2300/0426 , G09G2300/0852 , G09G2320/0233 , H01L27/1225 , H01L27/1255 , H01L29/7869 , H01L29/78696 , H10K59/1213
Abstract: A display device capable of improving image quality is provided. The display device is provided with an adder circuit in and outside a display region, and the adder circuit has a function of adding a plurality of data supplied from a source driver together. Components of the adder circuit are divided and partly arranged in the display region. Thus, limitation on the size of the component included in the adder circuit can be eased, and data addition can be performed efficiently. In addition, by providing other components included in the adder circuit outside the display region, the number of wirings in the display region can be reduced and the aperture ratio of the pixel can be increased.
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公开(公告)号:US11626439B2
公开(公告)日:2023-04-11
申请号:US17582279
申请日:2022-01-24
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor: Takayuki Ikeda , Naoto Kusumoto
IPC: H01L27/146 , H01L27/12 , H01L29/786 , H01L29/78
Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.
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公开(公告)号:US11433486B2
公开(公告)日:2022-09-06
申请号:US16344178
申请日:2017-10-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Shunpei Yamazaki , Naoto Kusumoto
IPC: B23K26/50 , B23K26/08 , B23K26/064 , B32B43/00 , B23K26/073 , H01L21/67
Abstract: A laser processing apparatus and a stack processing apparatus are provided. The laser processing apparatus includes a laser oscillator and an optical system for forming a linear beam and an x-y-θ or x-θ stage. With use of the x-y-θ or x-θ stage, the object to be processed can be moved and rotated in the horizontal direction. With this operation, a desired region of the object to be processed can be efficiently irradiated with laser light, and the area occupied by a chamber provided with the x-y-θ or x-θ stage can be made small.
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公开(公告)号:US11431932B2
公开(公告)日:2022-08-30
申请号:US17236267
申请日:2021-04-21
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Takuro Ohmaru , Naoto Kusumoto , Kentaro Hayashi
IPC: H04N5/3745 , H01L27/146 , H04N5/347 , H04N5/369 , H04N5/232
Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.
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公开(公告)号:US11335746B2
公开(公告)日:2022-05-17
申请号:US16743220
申请日:2020-01-15
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor: Hideaki Shishido , Naoto Kusumoto
IPC: H01L27/32 , G09G3/3225 , G09G3/3233 , G06F3/041 , G09G3/3258 , G09G3/20 , H01L29/786 , G09G3/36 , G02F1/133 , H01L51/52 , H01L51/10 , H01L27/12 , H01L51/00 , H01L51/50
Abstract: A display device with a narrow bezel is provided. The display device includes a pixel circuit and a driver circuit which are provided on the same plane. The driver circuit includes a selection circuit and a buffer circuit. The selection circuit includes a first transistor. The buffer circuit includes a second transistor. The first transistor has a region overlapping with the second transistor. One of a source and a drain of the first transistor is electrically connected to a gate of the second transistor. One of a source and a drain of the second transistor is electrically connected to the pixel circuit.
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