Display apparatus and electronic device

    公开(公告)号:US12204212B2

    公开(公告)日:2025-01-21

    申请号:US18599770

    申请日:2024-03-08

    Abstract: A display apparatus having an excellent boosting function is provided. The display apparatus is provided with a pixel having a function of adding data (a boosting function). A capacitor for boosting voltage is provided in the pixel, and data is added by capacitive coupling to be supplied to a display device. The capacitor for boosting voltage and a capacitor for retaining data are placed on top of each other, whereby the capacitance value of the capacitor for boosting voltage can be increased. Thus, the pixel can have an excellent boosting function, without significantly losing the aperture ratio or definition.

    Display device and electronic device

    公开(公告)号:US11935897B2

    公开(公告)日:2024-03-19

    申请号:US18205587

    申请日:2023-06-05

    CPC classification number: H01L27/1225 G02F1/13624 H01L27/124 H01L27/1255

    Abstract: A display device capable of performing proper display without image signal conversion is provided. In the case of high-resolution display, individual data is supplied to each pixel through a first signal line and a first transistor included in each pixel. In the case of low-resolution display, the same data is supplied to a plurality of pixels through a second signal line and a second transistor electrically connected to the plurality of pixels. When the number of image signals to be displayed is more than one and the image signals support different resolutions, display can be performed without up conversion or down conversion by switching an image signal supply path as described above.

    Imaging device and electronic device

    公开(公告)号:US11626439B2

    公开(公告)日:2023-04-11

    申请号:US17582279

    申请日:2022-01-24

    Abstract: An imaging device having a three-dimensional integration structure is provided. A first structure including a transistor including silicon in an active layer or an active region and a second structure including an oxide semiconductor in an active layer are fabricated. After that, the first and second structures are bonded to each other so that metal layers included in the first and second structures are bonded to each other; thus, an imaging device having a three-dimensional integration structure is formed.

    Imaging device, operating method thereof, and electronic device

    公开(公告)号:US11431932B2

    公开(公告)日:2022-08-30

    申请号:US17236267

    申请日:2021-04-21

    Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

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