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公开(公告)号：US20240049399A1
公开(公告)日：2024-02-08
申请号：US18266722
申请日：2021-12-02
申请人： KOA CORPORATION
发明人： Yasushi AKAHANE
CPC分类号： H05K3/3431 , H01C7/003 , H01C1/142 , H01C17/283 , H01C17/006
摘要： A chip resistor according to the present invention includes an insulating substrate, a pair of back surface electrodes, a pair of top surface electrodes, a resistor, and a pair of end face electrodes. The back surface electrode includes the first electrode portion located inwardly and away from the end face of the insulating substrate, and the two second electrode portions arranged on two portions, respectively, in the short direction of the insulating substrate with the cutout portion, which is positioned between the end face of the insulating substrate and the first electrode portion, being interposed therebetween, and the maximum height of the first electrode portion is set to be more than the maximum height of the second electrode portions.
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公开(公告)号：US20230377779A1
公开(公告)日：2023-11-23
申请号：US17852162
申请日：2022-06-28
申请人： HongQiSheng Precision Electronics (QinHuangdao) Co., Ltd. , Avary Holding (Shenzhen) Co., Ltd. , Garuda Technology Co., Ltd.
发明人： Jian WANG , Jun DAI , Xiao-Juan ZHANG
CPC分类号： H01C7/008 , H01C17/006 , H01C1/142
摘要： A buried thermistor includes a lower substrate, an upper substrate, and a number of thermistor stacks. Each thermistor stack includes two resistor subjects. Each resistor subject includes a base layer, a medium layer, a metal layer, a resistor layer, a nanometal layer, and a conductive layer. Applicable material of the resistor layer becomes more diverse by disposing the number of thermistor stacks, and the buried thermistor shows variable thermal sensitivity.
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公开(公告)号：US11763967B2
公开(公告)日：2023-09-19
申请号：US17429758
申请日：2020-01-31
发明人： Takehiro Yonezawa , Satoko Higano
IPC分类号： H01C7/00 , H01C1/142 , H01C17/00 , H01C17/065
CPC分类号： H01C7/008 , H01C1/142 , H01C17/006 , H01C17/06553
摘要： The present invention is provided with a base electrode layer forming step of forming a base electrode layer on both surfaces of a thermistor wafer formed of a thermistor material, a chip forming step of obtaining a thermistor chip with a base electrode layer by cutting the thermistor wafer to form chips, a protective film forming step of forming a protective film formed of an oxide on an entire surface of the thermistor chip with a base electrode layer, a cover electrode layer forming step of forming a cover electrode layer by applying and sintering a conductive paste on an end surface of the thermistor chip with a base electrode layer, and a conduction heat treatment step of performing a heat treatment such that the base electrode layer and the cover electrode layer are electrically conductive, in which the electrode portion is formed.
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公开(公告)号：US20230140922A1
公开(公告)日：2023-05-11
申请号：US17916641
申请日：2021-04-01
申请人： KOA CORPORATION
发明人： Susumu TOYODA , Keishi NAKAMURA , Shuhei MATSUBARA
CPC分类号： G01R1/203 , H01C17/006 , H01C1/142
摘要： The mounting area for an electronic component and a resistor for current detection is reduced. A current detection resistor for detecting current includes a plate-like resistive body, and a first electrode and an opposite second electrode which are stacked in a thickness direction of the resistive body and are disposed so as to sandwich the resistive body. The first electrode has a groove portion.
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公开(公告)号：US20230081158A1
公开(公告)日：2023-03-16
申请号：US17892711
申请日：2022-08-22
IPC分类号： H01C7/102 , H01C7/112 , H01C7/10 , H01C1/142 , H01C17/065
摘要： A varistor includes a sintered body, an internal electrode, an insulating layer, and an external electrode. The internal electrode is disposed in an interior of the sintered body. The insulating layer covers at least part of the sintered body and includes Zn2SiO4. The external electrode is electrically connected to the internal electrode, covers part of the sintered body and part of the insulating layer, and is in contact with the part of the insulating layer. The insulating layer has a region being in contact with the external electrode, the region having a greater average thickness than a region of the insulating layer which is out of contact with the external electrode.
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公开(公告)号：US11600410B2
公开(公告)日：2023-03-07
申请号：US17267818
申请日：2019-08-21
发明人： Takehiro Yonezawa , Miki Adachi
IPC分类号： H01C7/00 , H01C17/28 , H01C1/14 , H01C1/142 , H01C17/065
摘要： A thermistor has a thermistor element, a protective film, and an electrode portion. The protective film is formed of a SiO2 film having a film thickness in a range of 50 nm or more and 1000 nm or less. The protective film is formed in contact with the thermistor element. Alkali metal is unevenly distributed in a region including an interface between the thermistor element and the protective film.
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公开(公告)号：US20220270790A1
公开(公告)日：2022-08-25
申请号：US17545270
申请日：2021-12-08
发明人： Ah Ra Cho , Kwang Hyun Park
摘要： A chip resistor component, includes: a substrate having one surface, and one side surface and the other side surface facing each other in one direction; an terminal including an internal electrode disposed on the one surface, and an external electrode disposed on the one side surface to be connected to the internal electrode; a resistive layer disposed on the one surface, and including an outermost pattern connected to the internal electrode; and a protective layer disposed on the one surface to cover the resistive layer. The outermost pattern of the resistive layer has a first region in contact with the internal electrode and a second region extending, in the one direction, from the first region towards the other side surface. A ratio of a length of the second region in the one direction to a length of the chip resistor component in the one direction is 0.02 or more.
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公开(公告)号：US11189403B2
公开(公告)日：2021-11-30
申请号：US17039041
申请日：2020-09-30
申请人： ROHM CO., LTD.
发明人： Takanori Shinoura , Wataru Imahashi
IPC分类号： H01C1/142 , H01C17/00 , H01C17/02 , H01C17/242
摘要： A chip resistor includes an upper electrode provided on a substrate, a resistor element connected to the upper electrode, and a side electrode connected to the upper electrode. The side electrode, arranged on a side surface of the substrate, has two portions overlapping with the obverse surface and reverse surface of the substrate, respectively. An intermediate electrode covers the side electrode, and an external electrode covers the intermediate electrode. A first protective layer is disposed between the upper electrode and the intermediate electrode, and held in contact with the upper electrode and the side electrode. The first protective layer is more resistant to sulfurization than the upper electrode. A second protective layer is disposed between the first protective layer and intermediate electrode, and held in contact with the first protective layer, side electrode and intermediate electrode.
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公开(公告)号：US20210233687A1
公开(公告)日：2021-07-29
申请号：US17233059
申请日：2021-04-16
申请人： ROHM CO., LTD.
发明人： Masaki YONEDA
摘要： A chip resistor with a reduced thickness is provided. The chip resistor includes an insulating substrate, a resistor embedded in the substrate, a first electrode electrically connected to the resistor, and a second electrode electrically connected to the resistor. The first electrode and the second electrode are spaced apart from each other in a lateral direction that is perpendicular to the thickness direction of the substrate.
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公开(公告)号：US20210217544A1
公开(公告)日：2021-07-15
申请号：US16335600
申请日：2018-11-16
发明人： Shogo NAKAYAMA
摘要： In a metal plate resistor according to the present disclosure, each of a pair of electrodes includes a first portion and a second portion. The first portion protrudes from one surface of a resistive element to be in contact with an end of a protection film. The second portion is disposed in a corresponding recess of a pair of recesses. In a direction in which the pair of electrodes is arranged, the second portion has a length longer than a length of the first portion.
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