Radiofrequency double pole single throw switch
    91.
    发明申请
    Radiofrequency double pole single throw switch 有权
    射频双极单掷开关

    公开(公告)号:US20050012400A1

    公开(公告)日:2005-01-20

    申请号:US10621147

    申请日:2003-07-16

    申请人: Robert Gresham

    发明人: Robert Gresham

    IPC分类号: H01P1/15 H01H1/00 H02J1/00

    摘要: A double pole single throw (DPST) switch circuit including a first circuit portion corresponding to a first input port, a second circuit portion corresponding to a second input port, and an output port, wherein each of the first and second circuit portions include at least one first transistor providing a portion of an isolation channel, at least one second transistor providing a portion of a transmit channel, and at least one third transistor for providing a control bias for selecting either the transmit channel or the isolation channel.

    摘要翻译: 一种双极单掷(DPST)开关电路,包括对应于第一输入端口的第一电路部分,对应于第二输入端口的第二电路部分和输出端口,其中第一和第二电路部分中的每一个至少包括 提供隔离通道的一部分的第一晶体管,提供发射通道的一部分的至少一个第二晶体管,以及提供用于选择发射通道或隔离通道的控制偏置的至少一个第三晶体管。

    Series/shunt switch and method of control
    92.
    发明申请
    Series/shunt switch and method of control 有权
    串/分闸开关及控制方式

    公开(公告)号:US20040113746A1

    公开(公告)日:2004-06-17

    申请号:US10648022

    申请日:2003-08-26

    申请人: M/A-COM, Inc.

    IPC分类号: H01H085/04

    CPC分类号: H03K17/6871 H03K17/687

    摘要: A switch includes at least two signal ports in series with a series FET connected therebetween, and a shunt path having an FET, whereby an input bias is applied to a gate on the series FET and to a drain on the shunt FET. In one embodiment, the switch includes a control signal input, an FET connected in series across the first port and the second port, the series FET having a gate coupled to the control signal input, and a shunt path provided by an FET, the shunt FET having a drain coupled to the control signal input and to the gate of the series FET, whereby a single control signal is applied to both the series FET and the shunt FET, via the control signal input, in order to turn the series FET on and simultaneously turn the shunt FET off and, conversely, in order to turn the series FET off and simultaneously turn the shunt FET on.

    摘要翻译: 开关包括与连接在其间的串联FET串联的至少两个信号端口和具有FET的分路,由此将输入偏压施加到串联FET上的栅极和分流FET上的漏极。 在一个实施例中,开关包括控制信号输入端,串联连接在第一端口和第二端口上的FET,串联FET具有耦合到控制信号输入端的栅极和由FET提供的分流路径,分路 FET具有耦合到控制信号输入和耦合到串联FET的栅极的漏极,由此通过控制信号输入将单个控制信号施加到串联FET和并联FET两者,以便将串联FET导通 并且同时关闭并联FET,相反地,为了使串联FET关断并同时使分流FET导通。

    High speed cross-point switch using SiGe HBT technology and methods
    93.
    发明申请
    High speed cross-point switch using SiGe HBT technology and methods 失效
    高速交叉点开关采用SiGe HBT技术和方法

    公开(公告)号:US20040077120A1

    公开(公告)日:2004-04-22

    申请号:US10682949

    申请日:2003-10-09

    申请人: M/A-COM, Inc.

    发明人: Noyan Kinayman

    IPC分类号: H01L021/00

    摘要: A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably thinned at their intersections to reduce shunt capacitance between the coupled lines. It is also preferred that the input buffer be connected in cascode fashion with the switching transistors in order to create an amplification stage. The signal and its inverse are carried on balanced microstrip pairs in order to reduce electromagnetic field strength at the center of the balanced line pairs thereby improving isolation between two crossing balanced pairs.

    摘要翻译: 高速交叉点开关构建在优选硅衬底上,并且使用双极晶体管开关元件。 优选地,双极晶体管是SiGe双极结型晶体管。 相互交替的导电输入和输出微带优选在它们的交点处变薄,以减少耦合线之间的分流电容。 还优选地,输入缓冲器以开关晶体管的共源共享方式连接,以便产生放大级。 信号及其反相在平衡微带对上承载,以减小平衡线对中心处的电磁场强度,从而改善两个交叉平衡对之间的隔离。

    Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage
    94.
    发明申请
    Apparatus, methods, and articles of manufacture for a switch having sharpened control voltage 有权
    具有削尖控制电压的开关的装置,方法和制品

    公开(公告)号:US20040051395A1

    公开(公告)日:2004-03-18

    申请号:US10390957

    申请日:2003-03-18

    申请人: M/A Com, Inc.

    IPC分类号: H02B001/24 H01H019/14

    摘要: A sharp control voltage switch utilizing a plurality of field effect transistors (FETs) having and a bypass resistance topology to sharpen the control voltage. Utilizing a total of six gates allows the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.

    摘要翻译: 利用具有多个场效应晶体管(FET)的尖锐的控制电压开关和旁路电阻拓扑来锐化控制电压。 使用总共六个门允许开关在低控制电压下工作,而不需要增加器件周边或管芯尺寸。 连接在最上面的FET的栅极和源极之间的前馈电容器和最下面的FET的栅极和漏极被用于减少信号失真并提高开关内的FET的线性度和谐波抑制特性,从而降低谐波 开关。

    Magnetic coaxial connector
    96.
    发明授权
    Magnetic coaxial connector 失效
    磁同轴连接器

    公开(公告)号:US5401175A

    公开(公告)日:1995-03-28

    申请号:US83086

    申请日:1993-06-25

    IPC分类号: H01R13/62 H01R24/54 H01R11/30

    摘要: Several embodiments are shown for a quick connect/disconnect microwave coaxial connector which is held together under magnetic force. In one embodiment, the ends of coaxial cables are provided with annular magnets and the end faces ground flat. A good low SWR coaxial connection is made and held by simply pushing the ends together. In another embodiment, ring magnets are employed to hold standard coaxial ends together while enabling their disconnection by pulling them apart. A magnetic adapter is used to facilitate coaxial connections.

    摘要翻译: 示出了用于在磁力下保持在一起的快速连接/断开微波同轴连接器的几个实施例。 在一个实施例中,同轴电缆的端部设置有环形磁体,并且端面平坦。 通过简单地将端部推在一起,制成并保持良好的低SWR同轴连接。 在另一个实施例中,环形磁体用于将标准同轴端保持在一起,同时通过将它们分开来实现它们的断开。 磁性适配器用于促进同轴连接。

    Semiconductor device and method of fabrication
    98.
    发明授权
    Semiconductor device and method of fabrication 失效
    半导体器件及其制造方法

    公开(公告)号:US4733290A

    公开(公告)日:1988-03-22

    申请号:US853706

    申请日:1986-04-18

    摘要: A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.

    摘要翻译: 一种半导体器件及其相关制造方法,其中该器件包括其中具有以框架图案延伸的空腔的半导体衬底。 将诸如氮化硅之一的绝缘层沉积在空腔中,随后沉积多晶硅以基本上填充空腔并提供结构支撑。 在衬底的表面上形成外延层以及其中限定有窗口的第二绝缘层,以分别与外延层和衬底欧姆接触。 金属化被沉积以形成单独的光束引线以在外延层和衬底处提供欧姆接触。

    Infiltration detection apparatus
    99.
    发明授权
    Infiltration detection apparatus 失效
    渗透检测装置

    公开(公告)号:US4647281A

    公开(公告)日:1987-03-03

    申请号:US703326

    申请日:1985-02-20

    申请人: Kenneth L. Carr

    发明人: Kenneth L. Carr

    摘要: An apparatus used in association with a needle for infusing a liquid. This apparatus is for detecting the infiltration of the liquid through the vascular wall into the perivascular tissues. The apparatus includes a non-invasive conformal microwave antenna means adapted to be positioned over the area where liquid infusion occurs. A microwave radiometer connects from the antenna means for detecting sub-cutaneous temperature at the site thereof. A reference antenna means is also employed so that a proper temperature differential can be established. In an alternate version of the invention, switching means is provided so that upon detecting an alarm condition, the liquid can be immediately terminated and a neutralizing agent can be introduced to the needle.

    摘要翻译: 与用于注入液体的针结合使用的装置。 该装置用于检测通过血管壁的液体渗入血管周围组织。 该装置包括适于定位在发生液体输注的区域上的非侵入式保形微波天线装置。 微波辐射计与天线装置连接,用于检测其现场的皮下温度。 还使用参考天线装置,使得可以建立适当的温差。 在本发明的替代形式中,提供了切换装置,使得在检测到报警状态时,液体可以立即停止,并且中和剂可以被引入到针中。

    Microwave component mounting
    100.
    发明授权

    公开(公告)号:US4581250A

    公开(公告)日:1986-04-08

    申请号:US649946

    申请日:1984-09-13

    IPC分类号: H01L23/66 H03G11/02 H01L21/02

    摘要: A method of making a microwave semiconductor component and concurrently forming therewith a mounting membrane adapted for positioning the semiconductor component in an RF transmission medium such as a waveguide. Substantially concurrently with the deposition of a metallic film in connection with forming a semiconductor elements, there is deposited a metallic membrane on the base silicon substrate and outside of the circuit element. The outer periphery of the base substrate is removed to expose the membrane. The metallic membrane is preferably of gold.