摘要:
A double pole single throw (DPST) switch circuit including a first circuit portion corresponding to a first input port, a second circuit portion corresponding to a second input port, and an output port, wherein each of the first and second circuit portions include at least one first transistor providing a portion of an isolation channel, at least one second transistor providing a portion of a transmit channel, and at least one third transistor for providing a control bias for selecting either the transmit channel or the isolation channel.
摘要:
A switch includes at least two signal ports in series with a series FET connected therebetween, and a shunt path having an FET, whereby an input bias is applied to a gate on the series FET and to a drain on the shunt FET. In one embodiment, the switch includes a control signal input, an FET connected in series across the first port and the second port, the series FET having a gate coupled to the control signal input, and a shunt path provided by an FET, the shunt FET having a drain coupled to the control signal input and to the gate of the series FET, whereby a single control signal is applied to both the series FET and the shunt FET, via the control signal input, in order to turn the series FET on and simultaneously turn the shunt FET off and, conversely, in order to turn the series FET off and simultaneously turn the shunt FET on.
摘要:
A high-speed cross-point switch is built on a preferably silicon substrate and uses bipolar transistor switching elements. Preferably, the bipolar transistors are SiGe bipolar junction transistors. Intersecting conductive input and output microstrips are preferably thinned at their intersections to reduce shunt capacitance between the coupled lines. It is also preferred that the input buffer be connected in cascode fashion with the switching transistors in order to create an amplification stage. The signal and its inverse are carried on balanced microstrip pairs in order to reduce electromagnetic field strength at the center of the balanced line pairs thereby improving isolation between two crossing balanced pairs.
摘要:
A sharp control voltage switch utilizing a plurality of field effect transistors (FETs) having and a bypass resistance topology to sharpen the control voltage. Utilizing a total of six gates allows the switch to operate at a low control voltage without the need to increase device periphery or die size. Feed-forward capacitors connected between the gate and source of an uppermost FET and the gate and drain of a lowermost FET are used to reduce signal distortion and improve the linearity and harmonic noise rejection characteristics of the FETs within the switch and thus lower the harmonics of the switch.
摘要:
A microwave antenna and receiver assembly is described for use at gigaherz frequencies wherein the antenna is a microstrip antenna and the receiver includes a stripline filter circuit which is integrated in a layered configuration with both the microstrip antenna and the amplifier so as to achieve a very low noise figure, a low SWR and preserve good receiver characteristics, while being easily assembled inside a common radome housing. An inexpensive substrate material formed of alternating layers of polypropylene and woven glass is described for use with the microstrip antenna and other microwave structures.
摘要:
Several embodiments are shown for a quick connect/disconnect microwave coaxial connector which is held together under magnetic force. In one embodiment, the ends of coaxial cables are provided with annular magnets and the end faces ground flat. A good low SWR coaxial connection is made and held by simply pushing the ends together. In another embodiment, ring magnets are employed to hold standard coaxial ends together while enabling their disconnection by pulling them apart. A magnetic adapter is used to facilitate coaxial connections.
摘要:
A two-terminal field effect transistor device which is capable of operation as an oscillator including a field effect transistor connected in a two-terminal manner. The transistor has the usual drain source and gate electrodes and oscillating instability is provided by means of an inductance means of value so as to provide this circuit instability to enable circuit oscillations. The two-terminal arrangement is enabled by means of essentially interconnecting the gate and drain electrodes by way of said inductance means.
摘要:
A semiconductor device and associated method of fabrication in which the device includes a semiconductor substrate having a cavity therein extending in a frame pattern. An insulating layer such as one of silicon nitride is deposited in the cavity followed by the deposition of polysilicon to substantially fill the cavity and provide structural support. An epitaxy layer is formed over the surface of the substrate along with a second insulating layer having windows defined therein for enabling ohmic contact with the epitaxy layer and substrate, respectively. Metallization is deposited to form separate beam leads to provide ohmic contact at the epitaxy layer and substrate.
摘要:
An apparatus used in association with a needle for infusing a liquid. This apparatus is for detecting the infiltration of the liquid through the vascular wall into the perivascular tissues. The apparatus includes a non-invasive conformal microwave antenna means adapted to be positioned over the area where liquid infusion occurs. A microwave radiometer connects from the antenna means for detecting sub-cutaneous temperature at the site thereof. A reference antenna means is also employed so that a proper temperature differential can be established. In an alternate version of the invention, switching means is provided so that upon detecting an alarm condition, the liquid can be immediately terminated and a neutralizing agent can be introduced to the needle.
摘要:
A method of making a microwave semiconductor component and concurrently forming therewith a mounting membrane adapted for positioning the semiconductor component in an RF transmission medium such as a waveguide. Substantially concurrently with the deposition of a metallic film in connection with forming a semiconductor elements, there is deposited a metallic membrane on the base silicon substrate and outside of the circuit element. The outer periphery of the base substrate is removed to expose the membrane. The metallic membrane is preferably of gold.