公开(公告)号：US07646038B2

公开(公告)日：2010-01-12

申请号：US11852562

申请日：2007-09-10

Applicant: Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

Inventor： Bruce Faure ,  Fabrice Letertre ,  Bruno Ghyselen

IPC: H01L31/072 ,  H01L31/109 ,  H01L31/0328 ,  H01L31/0336

CPC classification number: C30B25/183 ,  C30B33/00 ,  H01L21/76254

Abstract: An efficient method of fabricating a high-quality heteroepitaxial microstructure having a smooth surface. The method includes detaching a layer from a base structure to provide a carrier substrate having a detached surface, and then forming a heteroepitaxial microstructure on the detached surface of the carrier substrate by depositing an epitaxial layer on the detached surface of a carrier substrate. Also included is a heteroepitaxial microstructure fabricated from such method.

Abstract translation: 制造具有光滑表面的高品质异质外延微结构的有效方法。 该方法包括从基底结构分离层以提供具有分离表面的载体基底，然后通过在载体基底的分离表面上沉积外延层而在载体基底的分离表面上形成异质外延微结构。 还包括由这种方法制造的异质外延微结构。

公开(公告)号：US07645684B2

公开(公告)日：2010-01-12

申请号：US12139609

申请日：2008-06-16

Applicant: Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

Inventor： Fabrice Letertre ,  Yves Mathieu Le Vaillant ,  Eric Jalaguier

IPC: H01L21/30

CPC classification number: H01L21/76254 ,  H01L21/2258

Abstract: A method of producing a substrate that has a transfer crystalline layer transferred from a donor wafer onto a support. The transfer layer can include one or more foreign species to modify its properties. In the preferred embodiment an atomic species is implanted into a zone of the donor wafer that is substantially free of foreign species to form an embrittlement or weakened zone below a bonding face thereof, with the weakened zone and the bonding face delimiting a transfer layer to be transferred. The donor wafer is preferably then bonded at the level of its bonding face to a support. Stresses are then preferably applied to produce a cleavage in the region of the weakened zone to obtain a substrate that includes the support and the transfer layer. Foreign species are preferably diffused into the thickness of the transfer layer prior to implantation or after cleavage to modify the properties of the transfer layer, preferably its electrical or optical properties. The preferred embodiment produces substrates with a thin InP layer rendered semi-insulating by iron diffusion.

Abstract translation: 一种制备具有从施主晶片转移到载体上的转移晶体层的衬底的方法。 转移层可以包括一种或多种外来物质来改变其性质。 在优选的实施方案中，将原子物质注入到施主晶片的基本上不含外来物质的区域中，以在其接合面下面形成脆化或弱化区域，其中弱化区域和键合面限定转移层为 转入。 然后优选地，施主晶片在其结合面的水平面处结合到支撑体上。 然后优选施加应力以在弱化区域的区域中产生切割，以获得包括载体和转移层的基底。 外来物质优选在植入之前或切割后扩散到转移层的厚度中，以改变转移层的性质，优选其电学或光学性质。 优选实施例产生具有通过铁扩散而半绝缘的薄InP层的衬底。

公开(公告)号：US20090321884A1

公开(公告)日：2009-12-31

申请号：US12553221

申请日：2009-09-03

Applicant: Bruce Faure ,  Fabrice Letertre

Inventor： Bruce Faure ,  Fabrice Letertre

IPC: H01L29/30

CPC classification number: H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  Y10S438/928 ,  Y10S438/977

Abstract: A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.

Abstract translation: 一种形成外延生长层的方法，优选地通过在支撑衬底中提供弱化区域并通过结合将成核部分转移到支撑衬底。 支撑基板的剩余部分在弱化区域分离，并且在成核部分上生长外延层。 剩余部分与支撑部分分离或以其它方式从支撑部分移除。

公开(公告)号：US07615464B2

公开(公告)日：2009-11-10

申请号：US11138926

申请日：2005-05-25

Applicant: Sébastien Kerdiles ,  Christophe Maleville ,  Fabrice Letertre ,  Olivier Rayssac

Inventor： Sébastien Kerdiles ,  Christophe Maleville ,  Fabrice Letertre ,  Olivier Rayssac

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: A method for minimizing or avoiding contamination of a receiving handle wafer during transfer of a thin layer from a donor wafer. This method includes one step of providing a donor wafer and a receiving handle wafer, each having a first surface prepared for bonding and a second surface, with the donor layer including a zone of weakness that defines a thin layer of donor wafer material to be transferred to the receiving handle wafer. Next, at least one of the first surfaces is treated to provide increased bonding energy when the first surfaces are bonded together; the surfaces are then bonded together to form an intermediate multilayer structure; and the thin layer is transferred to the receiving handle wafer to form a final multilayer structure by detachment at the zone of weakness and removal of remaining material of the donor wafer. This method avoids or minimizes contamination of the second surface of the receiving handle wafer by treating only the first bonding surface of the donor wafer prior to bonding, or by cleaning contamination from the second surface of the handle receiving wafer when present in the intermediate multilayer structure prior to detachment of the thin layer.

Abstract translation: 一种用于在从施主晶片传输薄层期间最小化或避免接收处理晶片的污染的方法。 该方法包括提供施主晶片和接收处理晶片的一个步骤，每个晶片具有准备用于接合的第一表面和第二表面，供体层包括限定要转移的施主晶片材料薄层的弱点区域 到接收处理晶片。 接下来，当第一表面结合在一起时，处理至少一个第一表面以提供增加的结合能; 然后将表面结合在一起以形成中间多层结构; 并且薄层被转移到接收处理晶片，以通过在弱化区域分离并且去除施主晶片的剩余材料而形成最终的多层结构。 该方法通过仅在接合之前仅处理供体晶片的第一接合表面，或者当存在于中间多层结构中时，通过清洁来自手柄接收晶片的第二表面的污染来避免或最小化接收处理晶片的第二表面的污染 在薄层分离之前。

公开(公告)号：US07605055B2

公开(公告)日：2009-10-20

申请号：US11142345

申请日：2005-06-02

Applicant: George K. Celler

Inventor： George K. Celler

IPC: H01L21/46

CPC classification number: H01L21/76254

Abstract: A method of manufacturing a wafer using a support substrate of a crystalline material. On the surface of the support substrate, a layer of a diamond is grown to form a first wafer in combination with the support substrate. A further substrate is bonded to the surface of the diamond layer, and a region of weakness is formed within the first wafer or the further substrate. Energy is then applied at the region of weakness to detach the structure into a first portion and a second portion.

Abstract translation: 使用结晶材料的支撑衬底制造晶片的方法。 在支撑衬底的表面上，生长金刚石层以与支撑衬底组合形成第一晶片。 另外的衬底被结合到金刚石层的表面，并且在第一晶片或另外的衬底内形成弱化区域。 然后在弱化区域施加能量以将结构分离成第一部分和第二部分。

公开(公告)号：US07601217B2

公开(公告)日：2009-10-13

申请号：US11283706

申请日：2005-11-22

Applicant: Bruce Faure ,  Fabrice Letertre

Inventor： Bruce Faure ,  Fabrice Letertre

IPC: C30B23/00 ,  C30B28/12 ,  H01L21/30

CPC classification number: H01L21/76254 ,  C30B25/18 ,  C30B33/00 ,  Y10S438/928 ,  Y10S438/977

Abstract: A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.

Abstract translation: 一种形成外延生长层的方法，优选地通过在支撑衬底中提供弱化区域并通过结合将成核部分转移到支撑衬底。 支撑基板的剩余部分在弱化区域分离，并且在成核部分上生长外延层。 剩余部分与支撑部分分离或以其它方式从支撑部分移除。

公开(公告)号：US07586154B2

公开(公告)日：2009-09-08

申请号：US11831217

申请日：2007-07-31

Applicant: Bruno Ghyselen ,  Hubert Moriceau

Inventor： Bruno Ghyselen ,  Hubert Moriceau

IPC: H01L21/30

CPC classification number: H01L21/3225 ,  H01L21/3226 ,  H01L21/76254 ,  H01L29/32

Abstract: A substrate suitable for producing a high frequency electronic circuit. This substrate includes a support substrate having a controlled amount of interstitial oxygen and which is treated to precipitate at least some of the oxygen therein; and a useful layer supported by the support substrate. Advantageously, the support substrate has high resistivity and includes oxygen precipitates beneath the useful layer while also being free of depleted zones of oxygen precipitates adjacent the useful layer. This is prepared by the methods disclosed herein which are applicable in particular to SOI substrates.

Abstract translation: 适用于生产高频电子电路的衬底。 该衬底包括具有受控量的间隙氧的支撑衬底，并被处理以沉淀其中的至少一部分氧; 以及由支撑基板支撑的有用层。 有利地，支撑衬底具有高电阻率并且在有用层下方包括氧沉淀物，同时也没有与有用层相邻的氧沉淀物的耗尽区域。 这通过本文所公开的方法制备，其特别适用于SOI衬底。

公开(公告)号：US07585793B2

公开(公告)日：2009-09-08

申请号：US11529959

申请日：2006-09-29

Applicant: Christophe Maleville ,  Walter Schwarzenbach ,  Vivien Renauld

Inventor： Christophe Maleville ,  Walter Schwarzenbach ,  Vivien Renauld

IPC: H01L21/00

CPC classification number: H01L21/02255 ,  H01L21/02238 ,  H01L21/31658 ,  H01L21/67098

Abstract: The invention provides methods for applying high temperature treatments to semiconductor wafers that limit surface tearing-off defects and surface particle contamination. In preferred embodiments, the high temperature treatments begin at boat-in temperatures of less than about 550° C. and include a first temperature ramp-up to the HT treatment temperatures at rates of 6° C./min or less. These methods are advantageously applied to semiconductor wafers comprising layers of different thermal properties, and in particular to semiconductor wafers comprising silicon-on-insulator structures.

Abstract translation: 本发明提供了对限制表面撕裂缺陷和表面颗粒污染的半导体晶片施加高温处理的方法。 在优选的实施方案中，高温处理从低于约550℃的船上温度开始，并且包括以6℃/ min或更低的速率升温至HT处理温度的第一温度。 这些方法有利地应用于包含不同热性质层的半导体晶片，特别是涉及包括绝缘体上硅结构的半导体晶片。

公开(公告)号：US07575988B2

公开(公告)日：2009-08-18

申请号：US11832431

申请日：2007-08-01

Applicant: Konstantin Bourdelle ,  Carlos Mazure ,  Pierre Rayssac, legal representative ,  Gisèle Rayssac, legal representative

Inventor： Olivier Rayssac

IPC: H01L21/4763

CPC classification number: H01L21/187

Abstract: A method of fabricating a hybrid substrate by direct bonding of donor and receiver substrates where each substrate has a respective front face and surface, with the front face of the receiver substrate having a semiconductor material near the surface, and the donor substrate including a zone of weakness that defines a layer to be transferred. The method includes preparing the substrate surfaces by exposing the surface of the receiver substrate to a temperature from about 900° C. to about 1200° C. in an inert atmosphere for at least 30 sec; directly bonding together the front faces of the prepared substrates to form a composite substrate; heat treating the composite substrate to increase bonding strength between the front surfaces of the donor and receiver substrates; and transferring the layer from the donor substrate by detaching the remainder of the donor substrate at the zone of weakness.

Abstract translation: 一种制造混合基板的方法，所述方法通过施主和接收器基板的直接接合，其中每个基板具有相应的正面和表面，其中所述接收器基板的前表面具有靠近所述表面的半导体材料，所述施主基板包括： 定义要转移的层的弱点。 该方法包括通过在惰性气氛中将接收器基底的表面暴露于约900℃至约1200℃的温度至少30秒来制备基底表面; 将所制备的基板的正面直接接合在一起以形成复合基板; 对复合基板进行热处理以增加供体和接收器基板的前表面之间的结合强度; 以及通过在弱化区域分离供体基质的剩余部分而从施主衬底转移层。

公开(公告)号：US20090191719A1

公开(公告)日：2009-07-30

申请号：US12415085

申请日：2009-03-31

Applicant: Frederic Dupont

Inventor： Frederic Dupont

IPC: H01L21/31

CPC classification number: H01L21/02032 ,  H01L21/76254 ,  Y10S438/93 ,  Y10S438/933

Abstract: Methods are disclosed for preparing a reconditioned donor substrate by providing a remainder substrate from a donor substrate wherein the remainder substrate has a detachment surface where a transfer layer was detached and an opposite surface; and depositing an additional layer onto the opposite surface of the remainder substrate to increase its thickness and to form a reconditioned substrate. The reconditioned substrate is recycled as a donor substrate for fabricating compound material wafers.

Abstract translation: 公开了通过从施主衬底提供剩余衬底来制备再生供体衬底的方法，其中剩余衬底具有分离表面，其中转移层被分离和相对表面; 并且在剩余基底的相对表面上沉积附加层以增加其厚度并形成再生衬底。 再生的衬底作为用于制造复合材料晶片的施主衬底被再循环。