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99 条记录 (耗时 0.019 秒)

    MEMS switch and method for manufacturing the same
    93.
    发明授权
    MEMS switch and method for manufacturing the same 失效
    MEMS开关及其制造方法

    公开(公告)号：US07619289B2

    公开(公告)日：2009-11-17

    申请号：US11472312

    申请日：2006-06-22

    申请人： Jong-seok Kim ,  In-sang Song ,  Sang-hun Lee ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Yun-kwon Park ,  Hee-moon Jeong ,  Young-tack Hong ,  Che-heung Kim ,  Seok-chul Yun ,  Kuang-woo Nam

    发明人： Jong-seok Kim ,  In-sang Song ,  Sang-hun Lee ,  Sang-wook Kwon ,  Duck-hwan Kim ,  Yun-kwon Park ,  Hee-moon Jeong ,  Young-tack Hong ,  Che-heung Kim ,  Seok-chul Yun ,  Kuang-woo Nam

    IPC分类号： H01L29/78

    CPC分类号： H01H61/02 ,  H01H61/063 ,  H01H2061/006

    摘要： A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.

    摘要翻译： MEMS开关包括在下基板的上表面上具有信号线的下基板; 在其上具有空腔的上基板，与下基板的上表面隔开一段距离，并且在上基板的下表面上具有膜层; 形成在膜层上的上基板的空腔中的双金属层; 形成在所述膜层的下表面上的加热层; 以及形成在所述加热层的下表面上的接触构件。 接触构件可以与信号线接触或分离。 制造MEMS开关的方法包括制备上基板和下基板并将其组合，使得具有信号线的表面面向具有接触构件的表面，并且上下基板分开一定距离。

    Monolithic duplexer and fabrication method thereof
    96.
    发明授权
    Monolithic duplexer and fabrication method thereof 有权
    单片双工器及其制造方法

    公开(公告)号：US07432781B2

    公开(公告)日：2008-10-07

    申请号：US11392624

    申请日：2006-03-30

    申请人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    发明人： Sang-chul Sul ,  Duck-hwan Kim ,  Chul-soo Kim ,  In-sang Song ,  Moon-chul Lee ,  Kyu-dong Jung ,  Jea-shik Shin

    IPC分类号： H03H7/46

    CPC分类号： H03H3/02 ,  H03H9/0571 ,  H03H9/706

    摘要： A monolithic duplexer and a fabrication method thereof. The monolithic duplexer includes a device wafer, a plurality of elements distanced from each other on a top portion of a device wafer, first sealing parts formed on the top portion of the device wafer, and a plurality of first ground planes formed between the plurality of elements. A cap wafer is also provided having an etched area for packaging the device wafer, a plurality of protrusion parts, a plurality of ground posts, and cavities. Second sealing parts are formed on a bottom portion of the protrusion parts, and a plurality of second ground planes cover the plurality of ground posts. Via holes vertically penetrate the cap wafer to connect to the plurality of the second ground planes, and ground terminals are formed on top portions of the via holes. The first sealing parts and the first ground planes are attached to the second sealing parts and the second ground planes, respectively.

    摘要翻译： 一种单片双工器及其制造方法。 单片双工器包括器件晶片，在器件晶片的顶部彼此远离的多个元件，形成在器件晶片的顶部上的第一密封部分和形成在器件晶片的顶部之间的多个第一接地平面 元素。 还提供了盖晶片，其具有用于封装器件晶片，多个突出部分，多个接地柱和空腔的蚀刻区域。 第二密封部分形成在突出部分的底部上，并且多个第二接地平面覆盖多个接地柱。 通孔垂直穿过盖晶片以连接到多个第二接地平面，并且接地端子形成在通孔的顶部上。 第一密封部分和第一接地平面分别附接到第二密封部分和第二接地平面。

    Air-gap type FBAR, and duplexer using the FBAR
    97.
    发明授权
    Air-gap type FBAR, and duplexer using the FBAR 失效
    气隙式FBAR和双工器使用FBAR

    公开(公告)号：US07233218B2

    公开(公告)日：2007-06-19

    申请号：US11429256

    申请日：2006-05-08

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H9/15 ,  H03H9/10 ,  H03H9/54

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

    Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate
    98.
    发明授权
    Fabricating methods for air-gap type FBARs and duplexers including securing a resonating part substrate to a cavity forming substrate 有权
    气隙式FBAR和双工器的制造方法，包括将谐振部分基板固定到腔形成基板

    公开(公告)号：US07053730B2

    公开(公告)日：2006-05-30

    申请号：US10825608

    申请日：2004-04-16

    申请人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  In-sang Song ,  Byeoung-ju Ha ,  Il-jong Song ,  Duck-hwan Kim

    IPC分类号： H03H9/70 ,  H03H3/007 ,  H03H9/10

    CPC分类号： H03H9/173 ,  H03H3/02 ,  H03H9/02133 ,  H03H9/0571 ,  H03H9/587 ,  H03H9/706 ,  Y10T29/42

    摘要： An air-gap type film bulk acoustic resonator (FBAR) is created by securing two substrate parts, one providing a resonance structure and the other providing a separation structure, i.e., a cavity. When the two substrate parts are secured, the resonance structure is over the cavity, forming an air gap isolating the resonant structure from the support substrate. The FBAR may be used to form a duplexer, which includes a plurality of resonance structures, a corresponding plurality of cavities, and an isolation part formed between the cavities. The separate creation of the resonance structures and the cavities both simplifies processing and allows additional elements to be readily integrated in the cavities.

    摘要翻译： 通过固定两个基板部分，一个提供谐振结构，另一个提供分离结构，即空腔，形成气隙型膜体声波谐振器（FBAR）。 当固定两个基板部分时，谐振结构在空腔之上，形成将谐振结构与支撑基板隔离的气隙。 FBAR可以用于形成双工器，其包括多个谐振结构，相应的多个空腔和形成在腔之间的隔离部分。 谐振结构和空腔的独立创建既简化了处理，并允许额外的元件容易地集成在空腔中。

    RF duplexer
    99.
    发明申请
    RF duplexer 有权
    射频双工器

    公开(公告)号：US20050195047A1

    公开(公告)日：2005-09-08

    申请号：US10996045

    申请日：2004-11-24

    申请人： Yun-kwon Park ,  Jong-seok Kim ,  In-sang Song ,  Duck-hwan Kim

    发明人： Yun-kwon Park ,  Jong-seok Kim ,  In-sang Song ,  Duck-hwan Kim

    IPC分类号： H01P1/20 ,  H03H9/70

    CPC分类号： H03H9/706 ,  H03H9/0571

    摘要： A compact and high-performance RF duplexer and fabrication method thereof, the RF duplexer includes a first filter and a second filter suspended over the substrate connected in series and in parallel and having a plurality of resonators, for passing signals of different frequency bands. A plurality of inductors are connected in series with the parallel resonators of the first and second filters and formed on the substrate. A phase shifter is formed on the substrate for preventing a signal interference between the first and second filters, and a supporter supports the first and second filters and has a plurality of bumps at certain parts on the substrate to electrically connect terminals of the first and second filter with terminals of the substrate. Accordingly, the size of the duplexer is reduced by forming the tuning inductors around the bumps of the PCB.

    摘要翻译： 一种紧凑且高性能的RF双工器及其制造方法，RF双工器包括悬挂在基板上串联并联并具有多个谐振器的第一滤波器和第二滤波器，用于传递不同频带的信号。 多个电感器与第一和第二滤波器的并联谐振器串联连接，并形成在基板上。 在基板上形成有用于防止第一和第二滤光器之间的信号干涉的移相器，并且支撑件支撑第一和第二滤光器，并且在基板上的某些部分具有多个凸块以电连接第一和第二滤光器的端子 过滤器与基板的端子。 因此，通过在PCB的凸块周围形成调谐电感来减小双工器的尺寸。