摘要:
A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要:
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要:
A micro electromechanical system (MEMS) device package and a method of manufacturing the same are provided. The MEMS device package includes: a device substrate with a MEMS active device being formed on the top surface thereof; internal electrode pads, each of which is positioned on the opposite side of the MEMS active device and electrically connected to the MEMS active device; sealing pads positioned outside of the internal electrode pads; a closure substrate joined to the device substrate through the sealing pads, the closure substrate having via holes formed at the areas where the internal electrode pads are positioned; and external electrode pads formed on the top surface of the closure substrate in such a way that the external electrode pads are electrically connected to the internal electrode pads through the via holes. The internal electrode pads and the sealing pads are formed from an identical material such as Au and thus the device substrate and the closure substrate are bonded to each other with direct bonding such as Au—Au direct bonding via the sealing pads.
摘要:
A compact and high-performance RF duplexer and fabrication method thereof, the RF duplexer includes a first filter and a second filter suspended over the substrate connected in series and in parallel and having a plurality of resonators, for passing signals of different frequency bands. A plurality of inductors are connected in series with the parallel resonators of the first and second filters and formed on the substrate. A phase shifter is formed on the substrate for preventing a signal interference between the first and second filters, and a supporter supports the first and second filters and has a plurality of bumps at certain parts on the substrate to electrically connect terminals of the first and second filter with terminals of the substrate. Accordingly, the size of the duplexer is reduced by forming the tuning inductors around the bumps of the PCB.
摘要:
A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要:
A RF system which includes a silicon substrate formed with at least one via-hole filled with conductive material so that both sides of the silicon substrate are electrically connected with one another; at least one flat device formed on one side of the silicon substrate; and at least one RF MEMS device formed on the other side of the silicon substrate.
摘要:
A film bulk acoustic resonator, and a method for manufacturing the same. The film bulk acoustic resonator includes a substrate, a protection layer vapor-deposited on the substrate, a membrane vapor-deposited on the protection layer and at a predetermined distance from an upper side of the substrate, and a laminated resonance part vapor-deposited on the membrane. Further, the manufacturing method includes vapor-depositing a membrane on a substrate, forming protection layers on both sides of the membrane, vapor-depositing a laminated resonance part on the membrane, and forming an air gap by removing a part of the substrate disposed between the protection layers. Accordingly, the membrane can be formed in a simple structure and without stress, and the whole manufacturing process is simplified.
摘要:
A MEMS switch includes a lower substrate having a signal line on an upper surface of the lower substrate; an upper substrate, having a cavity therein, disposed apart from the upper surface of the lower substrate by a distance, and having a membrane layer on a lower surface of the upper substrate; a bimetal layer formed in the cavity of the upper substrate on the membrane layer; a heating layer formed on a lower surface of the membrane layer; and a contact member formed on a lower surface of the heating layer. The contact member can come into contact with or separate from the signal line. A method for manufacturing the MEMS switch includes preparing the upper and lower substrates and combining them so that a surface having the signal line faces a surface having the contact member and the upper and lower substrates are disposed apart by a distance.
摘要:
An integrated filter including a film bulk acoustic resonator (FBAR) and a surface acoustic wave (SAW) resonator and a method of fabricating the integrated filter. The integrated filter includes: a substrate; a first electrode positioned in a predetermined first area on an upper surface of the substrate; a first piezoelectric layer positioned on the first electrode; a second electrode positioned on the first piezoelectric layer; a second piezoelectric layer positioned in a predetermined second area on the upper surface of the substrate; and at least one inter-digital transducer (IDT) electrode positioned on the second piezoelectric layer. The IDT electrode includes: a first IDT electrode formed in a comb structure on the second piezoelectric layer; and a second IDT electrode formed in a comb structure on the second piezoelectric layer so as to mesh with the first IDT electrode. The first and second piezoelectric layers are formed of an identical material. Thus, an integrated filter which operates in various frequency bands can be made compact.
摘要:
A compact and high-performance RF duplexer and fabrication method thereof, the RF duplexer includes a first filter and a second filter suspended over the substrate connected in series and in parallel and having a plurality of resonators, for passing signals of different frequency bands. A plurality of inductors are connected in series with the parallel resonators of the first and second filters and formed on the substrate. A phase shifter is formed on the substrate for preventing a signal interference between the first and second filters, and a supporter supports the first and second filters and has a plurality of bumps at certain parts on the substrate to electrically connect terminals of the first and second filter with terminals of the substrate. Accordingly, the size of the duplexer is reduced by forming the tuning inductors around the bumps of the PCB.