公开(公告)号：USD897296S1

公开(公告)日：2020-09-29

申请号：US29674976

申请日：2018-12-27

申请人： EPISTAR CORPORATION

设计人： Wei-Shan Hu ,  Ching-Tai Cheng ,  Pei-Hsuan Lan

公开(公告)号：US20200303590A1

公开(公告)日：2020-09-24

申请号：US16893342

申请日：2020-06-04

申请人： EPISTAR CORPORATION

发明人： Tzung-Shiun YEH ,  Li-Ming CHANG ,  Chien-Fu SHEN

IPC分类号： H01L33/36 ,  H01L33/62 ,  H01L33/38

摘要： An optoelectronic device includes a semiconductor stack; a current blocking region, including a first pad portion formed above the semiconductor stack and wherein the current blocking region includes insulated material; a first opening, formed in the first pad portion, exposing a top surface of the semiconductor stack; a transparent conductive layer, formed on the current blocking region and/or the top surface of the semiconductor stack, including a second opening exposing the first opening; and a first electrode, formed on the transparent conductive layer and including a first pad electrode formed above the first pad portion of the current blocking region and electrically connecting to the semiconductor stack through the first opening; wherein in a top view, the first opening and the second opening have different shapes.

公开(公告)号：US20200303377A1

公开(公告)日：2020-09-24

申请号：US16893348

申请日：2020-06-04

申请人： National Applied Research Laboratories ,  EPISTAR Corporation

发明人： Shih-Pang Chang ,  Guang-Li Luo ,  Szu-Hung Chen ,  Wen-Kuan Yeh ,  Jen-Inn Chyi ,  Meng-Yang Chen ,  Rong-Ren Lee ,  Shih-Chang Lee ,  Ta-Cheng Hsu

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L29/66 ,  H01L21/8238 ,  H01L29/16 ,  H01L29/20

摘要： A method of making a semiconductor device includes: providing a substrate; forming an insulating layer on the substrate; forming a first trench in the insulating layer; forming a first semiconductor layer in the first trench; and removing a portion of the insulating layer to expose the first semiconductor layer.

公开(公告)号：US20200300416A1

公开(公告)日：2020-09-24

申请号：US16888004

申请日：2020-05-29

申请人： EPISTAR CORPORATION

发明人： Wei-Chiang HU ,  Keng-Chuan CHANG ,  Chiu-Lin YAO ,  Chun-Wei LIN ,  Jung-Chang SUN

IPC分类号： F21K9/23 ,  F21K9/00

摘要： A lighting apparatus comprises: a board, a plurality of light-emitting units disposed on the board, and a package structure enclosing all of the light-emitting units and having a volume less than 5000 mm3. The lighting apparatus has a light intensity greater than 150 lumens.

公开(公告)号：US10784427B2

公开(公告)日：2020-09-22

申请号：US16579218

申请日：2019-09-23

申请人： EPISTAR CORPORATION

发明人： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Yu-Rui Lin ,  Chen Ou ,  Hsin-Ying Wang ,  Hui-Chun Yeh

IPC分类号： H01L33/62 ,  H01L33/20 ,  H01L33/06 ,  H01L33/30 ,  F21Y115/10 ,  H01L33/22 ,  H01L23/60 ,  F21K9/232 ,  H01L33/32 ,  H01L33/00 ,  H01L33/38 ,  H01L33/14

摘要： A light-emitting device includes a first edge to a fourth edge; a semiconductor stack formed on a substrate, including a first semiconductor layer, a second semiconductor layer and an active layer; a first electrode formed on the first semiconductor layer, including a first pad electrode and a first finger electrode; and a second electrode formed on the second semiconductor layer, including a second pad electrode and a second finger electrode; wherein the first finger electrode is disposed at and along the first edge; and the first finger electrode includes a first overlapping portion overlapping the second finger electrode; the second finger electrode includes a second overlapping portion overlapping the first finger electrode and a non-overlapping portion that does not overlap the first finger electrode; and the second overlapping portion is not parallel with the first overlapping portion and the non-overlapping portion is not parallel with the first edge.

公开(公告)号：US10784404B2

公开(公告)日：2020-09-22

申请号：US16397775

申请日：2019-04-29

申请人： EPISTAR CORPORATION

发明人： Peng Ren Chen ,  Yu-Shan Chiu ,  Wen-Hsiang Lin ,  Shih-Wei Wang ,  Chen Ou

IPC分类号： H01L33/22 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02 ,  H01L33/00 ,  H01L33/32

摘要： A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

公开(公告)号：US10777764B2

公开(公告)日：2020-09-15

申请号：US16232297

申请日：2018-12-26

申请人： EPISTAR CORPORATION

发明人： Yih-Hua Renn ,  Shau-Yi Chen ,  Ching-Tai Cheng ,  Aurelien Gauthier-Brun

IPC分类号： H01L51/50 ,  H01L33/26 ,  H01L33/40 ,  C09K11/77 ,  H01L33/62 ,  H01L51/56 ,  H01L33/50

摘要： A light-emitting device includes a light-emitting element having a first electrode and a second electrode, a carrier, a first contact and a second contact. The first contact is arranged on the carrier and is electrically connected to the first electrode. The second contact is arranged on the carrier and is electrically connected to the second electrode. The first contact has a contour similar with that of the first electrode. The second contact has a contour similar with that of the second electrode.

公开(公告)号：US10770635B2

公开(公告)日：2020-09-08

申请号：US16419570

申请日：2019-05-22

申请人： EPISTAR CORPORATION

发明人： Chien-Liang Liu ,  Ming-Chi Hsu ,  Jen-Chieh Yu

IPC分类号： H01L33/48 ,  H01L33/50 ,  H01L33/60

摘要： This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface.

公开(公告)号：US10749077B2

公开(公告)日：2020-08-18

申请号：US16227253

申请日：2018-12-20

申请人： EPISTAR CORPORATION

发明人： Chun-Yu Lin ,  Yung-Fu Chang ,  Rong-Ren Lee ,  Kuo-Feng Huang ,  Cheng-Long Yeh ,  Yi-Ching Lee ,  Ming-Siang Huang ,  Ming-Tzung Liou

IPC分类号： H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/06 ,  H01L33/20

摘要： An optoelectronic device includes a semiconductor stack including a first surface and a second surface opposite to the first surface; a first contact layer on the first surface; and a second contact layer on the second surface. The second contact layer is not overlapped with the first contact layer in a vertical direction. The second contact layer includes a plurality of dots separating to each other and formed of semiconductor material.

公开(公告)号：US20200259054A1

公开(公告)日：2020-08-13

申请号：US16863107

申请日：2020-04-30

申请人： EPISTAR CORPORATION

发明人： Min-Hsun HSIEH ,  Jai-Tai KUO ,  Wei-Kang CHENG

IPC分类号： H01L33/60 ,  H01L25/075 ,  H01L33/48 ,  H01L33/50 ,  H01L33/62

摘要： The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.