公开(公告)号：US10784404B2

公开(公告)日：2020-09-22

申请号：US16397775

申请日：2019-04-29

申请人： EPISTAR CORPORATION

发明人： Peng Ren Chen ,  Yu-Shan Chiu ,  Wen-Hsiang Lin ,  Shih-Wei Wang ,  Chen Ou

IPC分类号： H01L33/22 ,  H01L33/12 ,  H01L33/06 ,  H01L33/02 ,  H01L33/00 ,  H01L33/32

摘要： A light-emitting device, includes a substrate structure, including a base portion having a surface and a plurality of protrusions formed on the base portion; a buffer layer covering the plurality of protrusions and the surface; and III-V compound semiconductor layers formed on the buffer layer; wherein one of the plurality of protrusions has a height not greater than 1.5 μm; wherein the light-emitting device has a full width at half maximum (FWHM) of smaller than 250 arcsec in accordance with a (102) XRD rocking curve.

公开(公告)号：US08562738B2

公开(公告)日：2013-10-22

申请号：US13776312

申请日：2013-02-25

申请人： Epistar Corporation

发明人： Chen Ou ,  Wen-Hsiang Lin ,  Shih-Kuo Lai

IPC分类号： C30B25/02

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

公开(公告)号：US20130164873A1

公开(公告)日：2013-06-27

申请号：US13776312

申请日：2013-02-25

申请人： EPISTAR CORPORATION

发明人： Chen Ou ,  Wen-Hsiang Lin ,  Shih-Kuo Lai

IPC分类号： H01L33/00

CPC分类号： H01L21/0262 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L33/007 ,  H01L33/12

摘要： A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer.

摘要翻译： 氮化物系发光器件包括基板和在该基板上形成的多个层，其顺序如下：由氮形成的基于氮化物的缓冲层，第一III族元素和任选的第二III族元素， 第一氮化物基半导体层，发光层和第二氮化物基半导体层。

公开(公告)号：US11961939B2

公开(公告)日：2024-04-16

申请号：US17848079

申请日：2022-06-23

申请人： EPISTAR CORPORATION

发明人： Peng Ren Chen ,  Yu-Shan Chiu ,  Wen-Hsiang Lin ,  Shih-Wei Wang ,  Chen Ou

IPC分类号： H01L33/22 ,  H01L33/00 ,  H01L33/02 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

CPC分类号： H01L33/22 ,  H01L33/007 ,  H01L33/025 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

摘要： A method of manufacturing a light-emitting device, including: providing a substrate structure including a top surface; forming a precursor layer on the top surface; removing a portion of the precursor layer and a portion of the substrate from the top surface to form a base portion and a plurality of protrusions regularly arranged on the base portion; forming a buffer layer on the base portion and the plurality protrusions; and forming a III-V compound cap layer on the buffer layer; wherein one of the plurality of protrusions comprises a first portion and a second portion formed on the first portion; wherein the first portion is integrated with the base portion and has a first material which is the same as that of the base portion; and wherein the buffer layer contacts side surfaces of the plurality of protrusions and a surface of the base portion.

公开(公告)号：US11282982B2

公开(公告)日：2022-03-22

申请号：US16749884

申请日：2020-01-22

申请人： EPISTAR CORPORATION

发明人： Li-Ming Chang ,  Tzung-Shiun Yeh ,  Chien-Fu Shen ,  Wen-Hsiang Lin ,  Pei-Chi Chiang ,  Yi-Wen Ku

IPC分类号： H01L33/12 ,  H01L33/10 ,  F21V8/00 ,  H01L33/00 ,  H01L33/20 ,  H01L33/60

摘要： A light-emitting device, includes: a substrate, including a base with a main surface; and a plurality of protrusions on the main surface, wherein the protrusion and the base include different materials; and a semiconductor stack on the main surface, including a side wall, and wherein an included angle between the side wall and the main surface is an obtuse angle; wherein the main surface includes a peripheral area surrounding the semiconductor stack, and the peripheral area is devoid of the protrusion formed thereon.