-
公开(公告)号:US20200259054A1
公开(公告)日:2020-08-13
申请号:US16863107
申请日:2020-04-30
申请人: EPISTAR CORPORATION
发明人: Min-Hsun HSIEH , Jai-Tai KUO , Wei-Kang CHENG
IPC分类号: H01L33/60 , H01L25/075 , H01L33/48 , H01L33/50 , H01L33/62
摘要: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.
-
公开(公告)号:US20170345983A1
公开(公告)日:2017-11-30
申请号:US15165943
申请日:2016-05-26
申请人: EPISTAR CORPORATION
发明人: Min-Hsun HSIEH , Jai-Tai KUO , Wei-Kang CHENG
IPC分类号: H01L33/60 , H01L33/48 , H01L25/075 , H01L33/50 , H01L33/62
CPC分类号: H01L33/60 , H01L25/0753 , H01L33/486 , H01L33/502 , H01L33/58 , H01L33/62 , H01L2933/0091
摘要: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.
-
公开(公告)号:US20190157529A1
公开(公告)日:2019-05-23
申请号:US16240362
申请日:2019-01-04
申请人: EPISTAR CORPORATION
发明人: Min-Hsun HSIEH , Jai-Tai KUO , Wei-Kang CHENG
IPC分类号: H01L33/60 , H01L33/50 , H01L25/075 , H01L33/48 , H01L33/62
摘要: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.
-
公开(公告)号:US20170325303A1
公开(公告)日:2017-11-09
申请号:US15601616
申请日:2017-05-22
申请人: EPISTAR CORPORATION
发明人: Chih-Shu HUANG , Chun-Ju TUN , Shyi-Ming PAN , Wei-Kang CHENG , Keng-Ying LIAO
CPC分类号: H05B33/0815 , H01L27/0629 , H01L27/15 , H01L29/872 , H01L33/0025 , H05B33/0824 , H05B37/02 , Y02B20/348
摘要: A semiconductor component including a Wheatstone bridge rectifying circuit and a transistor is provided, wherein the Wheatstone bridge rectifying circuit and the transistor are formed on a same growth substrate, and wherein the Wheatstone bridge rectifying circuit includes a first rectifying diode; a second rectifying diode electrically connected to the first rectifying diode; a third rectifying diode electrically connected to the second rectifying diode; and a fourth rectifying diode electrically connected to the third rectifying diode.
-
-
-