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    Semiconductor device having improved short channel resistance
    91.
    发明授权
    Semiconductor device having improved short channel resistance 有权
    具有改善的短沟道电阻的半导体器件

    公开(公告)号：US06426535B1

    公开(公告)日：2002-07-30

    申请号：US09411942

    申请日：1999-10-04

    Applicant: Kiyoshi Takeuchi ,  Shigetaka Kumashiro

    Inventor： Kiyoshi Takeuchi ,  Shigetaka Kumashiro

    IPC: H01L2976

    CPC classification number: H01L29/6659 ,  H01L21/26513 ,  H01L29/7833

    Abstract: First, first conductivity type impurities are injected into a semiconductor substrate to selectively form a first conductivity type region. Next, second conductivity type impurities higher in concentration than that of the first conductivity type impurities are injected into a predetermined region in the first conductivity type region to selectively form a second conductivity type region. Then, first conductivity type impurities are selectively injected into the second conductivity type region to selectively form a lightly doped second conductivity type region. By the step, a concentration distribution is formed in which a concentration of first conductivity type impurities increases from the first conductivity type region toward the lightly doped second conductivity type region.

    Abstract translation: 首先，将第一导电型杂质注入到半导体衬底中以选择性地形成第一导电类型区域。 接下来，将浓度高于第一导电类型杂质的第二导电类型杂质注入到第一导电类型区域中的预定区域中，以选择性地形成第二导电类型区域。 然后，将第一导电型杂质选择性地注入到第二导电类型区域中，以选择性地形成轻掺杂的第二导电类型区域。 通过该步骤，形成浓度分布，其中第一导电类型杂质的浓度从第一导电类型区域向轻掺杂的第二导电类型区域增加。

    Reverse profiling method for profiling modulated impurity density distribution of semiconductor device
    92.
    发明授权
    Reverse profiling method for profiling modulated impurity density distribution of semiconductor device 有权
    用于分析半导体器件的调制杂质浓度分布的反向剖析方法

    公开(公告)号：US06242272B1

    公开(公告)日：2001-06-05

    申请号：US09366321

    申请日：1999-08-02

    Applicant: Shigetaka Kumashiro ,  Kiyoshi Takeuchi

    Inventor： Shigetaka Kumashiro ,  Kiyoshi Takeuchi

    IPC: H01L2166

    CPC classification number: H01L22/14

    Abstract: In a reverse profiling method, first and second processes produce first and second groups of MOSFETs, respectively. In the first process, channel impurities are implanted into a semiconductor substrate after implantation of source/drain impurities and annealing of the semiconductor substrate. Consequently, the annealing modulates channel impurity density distribution. On the other hand, in the second process, source/drain impurities are implanted into a semiconductor substrate after implantation of channel impurities and annealing of the semiconductor substrate. The annealing does not modulate channel impurity density distribution in the second process. First threshold voltage-gate length characteristics of the MOSFETs of the first group are found. Similarly, second threshold voltage-gate length characteristics of the MOSFETs of the first group are found. Finally, modulated impurity density distribution of the MOSFET of the first group is found on the basis of said first threshold voltage-gate length characteristics and said second threshold voltage-gate length characteristics.

    Abstract translation: 在反向轮廓分析方法中，第一和第二过程分别产生第一和第二组MOSFET。 在第一种处理中，在注入源/漏杂质和半导体衬底的退火之后，将沟道杂质注入到半导体衬底中。 因此，退火调节通道杂质浓度分布。 另一方面，在第二工序中，在注入沟道杂质和半导体衬底的退火之后，将源/漏杂质注入到半导体衬底中。 退火在第二工序中不调制通道杂质浓度分布。 发现第一组的MOSFET的第一阈值电压 - 栅极长度特性。 类似地，找到第一组的MOSFET的第二阈值电压 - 栅极长度特性。 最后，基于所述第一阈值电压 - 栅极长度特性和所述第二阈值电压 - 栅极长度特性，找到第一组的MOSFET的调制杂质浓度分布。

    Silver halide photographic light-sensitive material and method for forming an image
    93.
    发明授权
    Silver halide photographic light-sensitive material and method for forming an image 失效
    卤化银照相感光材料和形成图像的方法

    公开(公告)号：US6071678A

    公开(公告)日：2000-06-06

    申请号：US144330

    申请日：1998-08-31

    Applicant: Kiyoshi Takeuchi

    Inventor： Kiyoshi Takeuchi

    IPC: G03C7/00 ,  G03C1/42 ,  G03C7/30 ,  G03C7/305 ,  G03C7/32 ,  G03C7/392 ,  G03C7/407 ,  G03C7/413 ,  G03C8/40

    CPC classification number: G03C8/408 ,  G03C7/3005 ,  G03C7/30517 ,  G03C7/413 ,  G03C1/061 ,  G03C1/42 ,  G03C7/30541 ,  G03C7/39224

    Abstract: There is disclosed a silver halide photographic light-sensitive material that contains at least one color-developing agent of formula (I) and at least one dye-forming coupler of formula (II) contained in one or more photographic constitutional layers provided on a base: ##STR1## in formula (I), Z is a carbamoyl group or the like, and Q represents a group of atoms required to form an unsaturated ring together with the C, and in formula (II), M represents a coupler component capable of causing coupling reaction at the site where G is bonded with the oxidized color-developing agent, G is a hydrogen atom or a coupling split-off group, Y.sup.1 and Y.sup.2 each represent a group having a dissociation group, whose pKa is 1 or more but 12 or less, and n and m are each an integer of 0 to 3, provided that n+m.gtoreq.1. There is also disclosed an image-forming method using the light-sensitive material. According to the use of the novel color-developing agent and the coupler having a dissociation group, an image excellent in maximum color density can be provided.

    Abstract translation: 公开了一种卤化银照相感光材料，其含有至少一种式（I）的显色剂和至少一种式（II）的染料形成成色剂包含在设置在基材上的一个或多个照相结构层中 ：式（I）中，Z为氨基甲酰基等，Q为与C一起形成不饱和环所需的原子团，式（II）中，M表示能够引起偶联的成色剂成分 G与氧化显色剂结合的位置处的反应，G为氢原子或偶联离去基团，Y1和Y2各自表示具有离解基团的基团，其pKa为1以上且12以下， 较小，n和m各自为0〜3的整数，条件是n + m> / = 1。 还公开了使用感光材料的图像形成方法。 根据新型显色剂和具有解离基团的成色剂的用途，可以提供最大色密度优异的图像。

    Color diffusion transfer silver halide photographic materials and process for forming images
    94.
    发明授权
    Color diffusion transfer silver halide photographic materials and process for forming images 失效
    彩色扩散转印卤化银照相材料和形成图像的工艺

    公开(公告)号：US5976756A

    公开(公告)日：1999-11-02

    申请号：US758101

    申请日：1996-11-29

    Applicant: Koki Nakamura ,  Kiyoshi Takeuchi ,  Taiji Katsumata ,  Toshiki Taguchi

    Inventor： Koki Nakamura ,  Kiyoshi Takeuchi ,  Taiji Katsumata ,  Toshiki Taguchi

    IPC: G03C8/12 ,  G03C1/42 ,  G03C7/413 ,  G03C8/36 ,  G03C8/40 ,  G03C8/20

    CPC classification number: G03C8/36 ,  G03C1/061 ,  G03C1/42 ,  G03C7/413

    Abstract: A diffusion transfer silver halide photographic material containing a color developing agent represented by the following formula (I) in a hydrophilic colloid layer provided on a support: ##STR1## wherein C.sub..alpha. represents a carbon atom; Z represents a carbamoyl group, an acyl group, an alkoxycarbonyl group, or an aryloxycarbonyl group; and Q represents an atomic group for forming a unsaturated ring together with C.sub..alpha., whereby a color diffusion transfer silver halide photographic material containing a novel color developing agent from which a diffusible dye can be formed is provided.

    Abstract translation: 含有由下式（I）表示的显色剂的扩散转移卤化银照相材料在设置在载体上的亲水胶体层中：其中Cα表示碳原子; Z表示氨基甲酰基，酰基，烷氧羰基或芳氧基羰基; 并且Q表示用于与Cα一起形成不饱和环的原子团，由此提供含有可形成可扩散染料的新型彩色显影剂的颜色扩散转印卤化银照相材料。

    Silver halide photographic light-senstive material and method for forming an image
    95.
    发明授权
    Silver halide photographic light-senstive material and method for forming an image 失效
    卤化银照相光敏材料和形成图像的方法

    公开(公告)号：US5851745A

    公开(公告)日：1998-12-22

    申请号：US908681

    申请日：1997-08-07

    Applicant: Kiyoshi Takeuchi

    Inventor： Kiyoshi Takeuchi

    IPC: G03C7/00 ,  G03C1/42 ,  G03C7/30 ,  G03C7/305 ,  G03C7/32 ,  G03C7/392 ,  G03C7/407 ,  G03C7/413 ,  G03C8/40

    CPC classification number: G03C8/408 ,  G03C7/3005 ,  G03C7/30517 ,  G03C7/413 ,  G03C1/061 ,  G03C1/42 ,  G03C7/30541 ,  G03C7/39224

    Abstract: There is disclosed a silver halide photographic light-sensitive material that contains at least one color-developing agent of formula (I) and at least one dye-forming coupler of formula (II) contained in one or more photographic constitutional layers provided on a base: ##STR1## in formula (I), Z is a carbamoyl group or the like, and Q represents a group of atoms required to form an unsaturated ring together with the C, and in formula (II), M represents a coupler component capable of causing coupling reaction at the site where G is bonded with the oxidized color-developing agent, G is a hydrogen atom or a coupling split-off group, Y.sup.1 and Y.sup.2 each represent a group having a dissociation group, whose pKa is 1 or more but 12 or less, and n and m are each an integer of 0 to 3, provided that n+m.gtoreq.1. There is also disclosed an image-forming method using the light-sensitive material. According to the use of the novel color-developing agent and the coupler having a dissociation group, an image excellent in maximum color density can be provided.

    Abstract translation: 公开了一种卤化银照相感光材料，其含有至少一种式（I）的显色剂和至少一种式（II）的染料形成成色剂包含在设置在基材上的一个或多个照相结构层中 式（I）中的式（I）（I）（Y1）nMG（Y2）m式（II），Z是氨基甲酰基等，Q表示与不饱和环一起形成的原子团以及 C，在式（II）中，M表示能够在G与氧化显色剂结合的位置处发生偶联反应的成色剂成分，G为氢原子或偶联离解基团Y1和 Y2各自表示具有离解基团的基团，其pKa为1以上且12以下，n和m各自为0〜3的整数，条件是n + m> / = 1。 还公开了使用感光材料的图像形成方法。 根据新型显色剂和具有解离基团的成色剂的用途，可以提供最大色密度优异的图像。

    Cap with a hinged top lid
    96.
    发明授权
    Cap with a hinged top lid 失效
    盖有铰链顶盖

    公开(公告)号：US5620107A

    公开(公告)日：1997-04-15

    申请号：US562101

    申请日：1995-11-22

    Applicant: Kiyoshi Takeuchi

    Inventor： Kiyoshi Takeuchi

    IPC: B65D47/08 ,  B65D43/24

    CPC classification number: B65D47/0828 ,  B65D47/0809

    Abstract: A cap comprises a cap body and a top lid, which are united by a hinge. A rubber-like elastic member is provided on the cap body such as to be elastically deformed between the cap body and the top when the top lid is closed.

    Abstract translation: 帽包括盖体和顶盖，它们通过铰链联合。 橡胶状弹性构件设置在盖体上，以便当顶盖关闭时在帽体和顶部之间弹性变形。

    Parameter extraction apparatus using MISFET devices of different gate lengths
    98.
    发明授权
    Parameter extraction apparatus using MISFET devices of different gate lengths 失效
    使用不同栅极长度的MISFET器件的参数提取装置

    公开(公告)号：US5493238A

    公开(公告)日：1996-02-20

    申请号：US233828

    申请日：1994-04-26

    Applicant: Kiyoshi Takeuchi

    Inventor： Kiyoshi Takeuchi

    IPC: G01R31/26 ,  G01R1/04

    CPC classification number: G01R31/2621

    Abstract: In a device parameter extracting apparatus, a set of drain currents I.sub.D (i,j) is measured from each of a plurality of MISFET devices of different gate lengths L(i) by successively applying gate voltages V.sub.G (i,j) to each of the MISFET devices for a predetermined drain voltage, where i identifies each of the MISFET devices and j is an integer. A set of drain currents I.sub.D (i,k) is interpolated from the measured drain currents I.sub.D (i,j) such that the interpolated drain currents correspond respectively to predetermined ones of voltage differences V.sub.G (i,j)-V.sub.TH (i), where k is an integer and V.sub.TH (i) is a threshold voltage of each of the MISFET devices. A set of regression lines R(k)=a(k)L(i)+b(k) is derived in a coordinate space from a set of relationships between V(k)/I.sub.D (i,k) and the gate lengths L(i) of the devices, where a(k) and b(k) are constants, where V(k) represents the predetermined ones of voltage differences. From the constants a(k) and b(k) is derived a coordinate point of the space which corresponds to an intersection of the regression lines.

    Abstract translation: 在设备参数提取装置中，通过对每个不同的栅极长度L（i）的多个MISFET器件中的每一个测量栅极电压VG（i，j），从而测量漏极电流ID（i，j） 用于预定漏极电压的MISFET器件，其中i标识每个MISFET器件，j是整数。 从测量的漏极电流ID（i，j）插入一组漏极电流ID（i，k），使得内插的漏极电流分别对应于预定的电压差VG（i，j）-VTH（i）， 其中k是整数，VTH（i）是每个MISFET器件的阈值电压。 一组回归线R（k）= a（k）L（i）+ b（k）从V（k）/ ID（i，k）和栅极长度 L（i），其中a（k）和b（k）是常数，其中V（k）表示预定的电压差。 从常数a（k）和b（k）得出对应于回归线的交点的空间的坐标点。

    Method of producing capacitive element integrated circuit
    99.
    发明授权
    Method of producing capacitive element integrated circuit 失效
    生产电容元件集成电路的方法

    公开(公告)号：US5162253A

    公开(公告)日：1992-11-10

    申请号：US863105

    申请日：1992-04-03

    Applicant: Kiyoshi Takeuchi

    Inventor： Kiyoshi Takeuchi

    IPC: H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

    CPC classification number: H01L27/10817

    Abstract: For a process of producing a capacitive element with a storage node electrode formed of layered electrode, there is proposed a method of preventing an unstable condition that a part of the storage node electrode during the processes is positioned in the air without support therebelow. The storage node electrode is formed by embedding a polysilicon plug in an aperture which reaches to a silicon active layer on a silicon substrate from the surface where a polysilicon capacitive electrode is formed on a polysilicon capacitive electrode provided thereon with the first capacitive insulating film. After a second capacitive insulating film and a polysilicon capacitive electrode are formed, the polysilicon capacitive electrodes are connected with each other by a polysilicon plug to form a cell plate electrode.

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