公开(公告)号：US07576018B2

公开(公告)日：2009-08-18

申请号：US11684957

申请日：2007-03-12

Applicant: Merritt Funk

Inventor： Merritt Funk

IPC: H01L21/00

CPC classification number: H01L21/3065 ,  H01L21/02071 ,  H01L21/32136 ,  H01L21/32137 ,  H01L21/67253 ,  H01L21/6838 ,  Y10S438/905 ,  Y10S438/935

Abstract: A method is provided to cause deformation of a substrate during processing of the substrate. The method comprises supporting a substrate on a substrate support in a vacuum chamber for processing; providing backside gas through inlet ports of each of a plurality of groups of ports lying in a respective plurality of areas across the substrate support to a space between the substrate support and the substrate, each of said areas of the substrate support having at least one backside gas inlet port connected to a supply of backside gas and at least one outlet port connected to a vacuum exhaust system; and separately controlling the pressure of the backside gas at different ones of the ports of the plurality to control separately, in areas around the respective ones of said ports, the local pressure force exerted on the backside of the substrate, by separately dynamically controlling at least one valve affecting gas flow to a port of each of said areas while separately dynamically controlling at least one other valve affecting gas flow from the remaining plurality of ports of each of said areas surrounding said port to which gas is introduced.

Abstract translation: 提供了一种在衬底加工期间引起衬底变形的方法。 该方法包括将基板支撑在真空室中用于处理的基板支撑件上; 通过位于基板支撑件的相应多个区域中的多个端口中的每一个的入口端口到基板支撑件和基板之间的空间来提供背侧气体，基板支撑件的每个所述区域具有至少一个背面 连接到后侧气体供应的气体入口和连接到真空排气系统的至少一个出口; 并且分别控制多个端口中的不同端口处的背侧气体的压力，在各个端口周围的区域中分别控制施加在基板的背面上的局部压力，通过分别动态地控制至少 一个阀影响到每个所述区域的端口的气体流动，同时单独地动态地控制影响来自围绕所述引入气体的所述端口的每个所述区域的剩余多个端口的气体流的至少一个其他阀。

公开(公告)号：US07567700B2

公开(公告)日：2009-07-28

申请号：US11390469

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

IPC: G06K9/00

CPC classification number: G03F7/70625 ,  G03F7/70525

Abstract: A method of processing a wafer is presented that includes creating a pre-processing measurement map using measured metrology data for the wafer including metrology data for at least one isolated structure on the wafer, metrology data for at least one nested structure on the wafer, or mask data. At least one pre-processing prediction map is calculated for the wafer. A pre-processing confidence map is calculated for the wafer. The pre-processing confidence map includes a set of confidence data for the plurality of dies on the wafer. A prioritized measurement site is determined when the confidence data for one or more dies is not within the confidence limits. A new measurement recipe that includes the prioritized measurement site is then created.

Abstract translation: 提出了一种处理晶片的方法，其包括使用测量的用于晶片的测量数据创建预处理测量图，包括晶片上的至少一个隔离结构的测量数据，晶片上的至少一个嵌套结构的度量数据，或 掩码数据。 为晶片计算至少一个预处理预测图。 计算晶片的预处理置信图。 预处理置信图包括晶片上的多个管芯的一组置信数据。 当一个或多个管芯的置信度数据不在置信限度内时，确定优先测量点。 然后创建包含优先测量站点的新测量配方。

公开(公告)号：US20090081815A1

公开(公告)日：2009-03-26

申请号：US11859507

申请日：2007-09-21

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel J. Prager ,  Lee Chen ,  Radha Sundararajan

IPC: H01L21/311

CPC classification number: H01L21/31116 ,  H01J37/32091 ,  H01J37/32422 ,  H01L22/12 ,  H01L29/6656 ,  H01L29/66575 ,  H01L29/78 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The invention can provide a method of processing a substrate using S-O processing sequences and evaluation libraries that can include one or more optimized spacer creation and evaluation procedures.

Abstract translation: 本发明可以提供使用S-O处理序列处理衬底的方法以及可以包括一个或多个优化的间隔物产生和评估程序的评估库。

公开(公告)号：US20080227227A1

公开(公告)日：2008-09-18

申请号：US11684818

申请日：2007-03-12

Applicant: Radha Sundararajan ,  Lee Chen ,  Merritt Funk

Inventor： Radha Sundararajan ,  Lee Chen ,  Merritt Funk

IPC: H01L21/306 ,  H01L21/66

CPC classification number: H01L22/20

Abstract: A method and apparatus are provided to control the radial or non-radial temperature distribution across a substrate during processing to compensate for non-uniform effects, including radial and angular non-uniformities arising from system variations, or process variations, or both. The temperature is controlled, preferably dynamically, by flowing backside gas differently across different areas on a wafer supporting chuck to vary heat conduction across the wafer. Backside gas flow, of helium, for example, is dynamically varied across the chuck to control the uniformity of processing of the wafer. Ports in the support are grouped, and gas to or from the groups is separately controlled by different valves responsive to a controller that controls gas pressure in each of the areas to spatially and preferably dynamically control wafer temperature to compensate for system and process non-uniformities.

Abstract translation: 提供了一种方法和装置，以在处理期间控制衬底上的径向或非径向温度分布，以补偿不均匀的影响，包括由系统变化产生的径向和角度不均匀性或过程变化，或两者。 优选动态地控制温度，通过在晶片支撑卡盘上的不同区域上不同地流动背面气体来改变晶片上的热传导。 例如，氦的背侧气体流动在卡盘之间动态变化以控制晶片的处理的均匀性。 支撑中的端口被分组，并且来自组的气体由响应于控制器的不同阀单独控制，所述控制器在空间上控制每个区域中的气体压力，并且优选地动态地控制晶片温度以补偿系统和过程的不均匀性 。

公开(公告)号：US20080183413A1

公开(公告)日：2008-07-31

申请号：US11668654

申请日：2007-01-30

Applicant: Sachin Deshpande ,  Merritt Funk

Inventor： Sachin Deshpande ,  Merritt Funk

IPC: G06F19/00

CPC classification number: G03F7/70875 ,  G03F7/70491 ,  G03F7/70525 ,  G03F7/70691

Abstract: A method for facilitating an ODP measurement of a semiconductor wafer. The method includes obtaining real time wafer characteristic data for a measurement site on said wafer and detecting a measured diffraction signal from a structure within the measurement site of the wafer. The measured diffraction signal is matched with a simulated diffraction signal stored in a wafer characteristic dependent profile library. A hypothetical profile structure associated with the simulated diffraction signal in the wafer characteristic dependent profile library is then identified. The real time wafer characteristic data is used to facilitate at least one of the matching and identifying.

Abstract translation: 一种用于促进半导体晶片的ODP测量的方法。 该方法包括获得在所述晶片上的测量位置的实时晶片特征数据，并且从晶片的测量位置内的结构检测测量的衍射信号。 测量的衍射信号与存储在晶片特征依赖型谱库中的模拟衍射信号相匹配。 然后识别与晶片特性相关型材库中的模拟衍射信号相关联的假设轮廓结构。 实时晶片特征数据用于促进匹配和识别中的至少一个。

公开(公告)号：US20080182343A1

公开(公告)日：2008-07-31

申请号：US11668553

申请日：2007-01-30

Applicant: Sachin Deshpande ,  Merritt Funk

Inventor： Sachin Deshpande ,  Merritt Funk

IPC: H01L21/00 ,  G01B11/02

CPC classification number: G01B11/06

Abstract: The invention can provide a method of processing a wafer using a Real-Time Parameter Tuning (RTPT) procedure to receive an input message that can include a pass-through message, a real-time feedforward message, or a real-time optimization message, or any combination thereof. The RTPT procedures can use real-time wafer temperature data to create, modify, and/or use measurement recipe data, measurement profile data, and/or measurement model data. In addition, RTPT procedures can use real-time wafer temperature data to create, modify, and/or use process recipe data, process profile data, and/or process model data.

Abstract translation: 本发明可以提供使用实时参数调整（RTPT）程序来处理晶片的方法，以接收可以包括直通消息，实时前馈消息或实时优化消息的输入消息， 或其任何组合。 RTPT程序可以使用实时晶片温度数据来创建，修改和/或使用测量配方数据，测量简档数据和/或测量模型数据。 此外，RTPT程序可以使用实时晶片温度数据来创建，修改和/或使用过程配方数据，过程配置文件数据和/或过程模型数据。

公开(公告)号：US20080137078A1

公开(公告)日：2008-06-12

申请号：US12021172

申请日：2008-01-28

Applicant: Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

Inventor： Kevin LALLY ,  Merritt FUNK ,  Radha SUNDARARAJAN

IPC: G06F15/18

CPC classification number: G01N21/95607 ,  G01N21/4788 ,  G01N21/9501 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of measuring a damaged structure formed on a semiconductor wafer using optical metrology, the method includes obtaining a measured diffraction signal from a damaged periodic structure. A hypothetical profile of the damaged periodic structure is defined. The hypothetical profile having an undamaged portion, which corresponds to an undamaged area of a first material in the damaged periodic structure, and a damaged portion, which corresponds to a damaged area of the first material in the damaged periodic structure. The undamaged portion and the damaged portion have different properties associated with them. A simulated diffraction signal is calculated for the hypothetical damaged periodic structure using the hypothetical profile. The measured diffraction signal is compared to the simulated diffraction signal. If the measured diffraction signal and the simulated diffraction signal match within a matching criterion, then a damage amount for the damaged periodic structure is established based on the damaged portion of the hypothetical profile used to calculate the simulated diffraction signal.

Abstract translation: 一种使用光学测量法测量在半导体晶片上形成的损坏结构的方法，该方法包括从损坏的周期性结构获得测量的衍射信号。 定义损坏的周期结构的假设剖面。 具有未损坏部分的假想轮廓，其对应于损坏的周期性结构中的第一材料的未损坏区域，以及损坏部分，其对应于损坏的周期性结构中的第一材料的损坏区域。 未损伤部分和损坏部分具有与它们相关联的不同性质。 使用假设曲线计算假设损坏的周期性结构的模拟衍射信号。 将测得的衍射信号与模拟衍射信号进行比较。 如果测量的衍射信号和模拟衍射信号在匹配标准内匹配，则基于用于计算模拟衍射信号的假想轮廓的损坏部分建立损坏的周期性结构的损伤量。

公开(公告)号：US07328418B2

公开(公告)日：2008-02-05

申请号：US11046903

申请日：2005-02-01

Applicant: Asao Yamashita ,  Merritt Funk ,  Daniel Prager

Inventor： Asao Yamashita ,  Merritt Funk ,  Daniel Prager

IPC: G06F17/50 ,  G06F9/45

CPC classification number: H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

Abstract: This method includes a method for etch processing that allows the bias between isolated and nested structures/features to be adjusted, correcting for a process wherein the isolated structures/features need to be smaller than the nested structures/features and wherein the nested structures/features need to be reduced relative to the isolated structures/features, while allowing for the critical control of trimming.

Abstract translation: 该方法包括用于蚀刻处理的方法，其允许调整隔离结构/嵌套结构/特征之间的偏置，校正其中隔离结构/特征需要小于嵌套结构/特征的过程，并且其中嵌套结构/特征 需要相对于孤立的结构/特征而减少，同时允许对修剪的关键控制。

公开(公告)号：US20080027577A1

公开(公告)日：2008-01-31

申请号：US11865739

申请日：2007-10-02

Applicant: David Horak ,  Wesley Natzle ,  Merritt Funk ,  Kevin Lally ,  Daniel Prager

Inventor： David Horak ,  Wesley Natzle ,  Merritt Funk ,  Kevin Lally ,  Daniel Prager

IPC: G06F19/00 ,  G01B11/14

CPC classification number: H01L22/20

Abstract: A system, method and program product for correcting a deviation of a dimension of a feature from a target in a semiconductor process, are disclosed. The invention determines an origin of a deviation in a feature dimension from a target dimension regardless of whether it is based on processing or metrology. Adjustments for wafer processing variation of previous process tools can be fed forward, and adjustments for the process and/or integrated metrology tools may be fed back automatically during the processing of semiconductor wafers. The invention implements process reference wafers to determine the origin in one mode, and measurement reference wafers to determine the origin of deviations in another mode.

Abstract translation: 公开了一种用于在半导体处理中校正特征尺寸与目标的偏差的系统，方法和程序产品。 本发明确定特征维度与目标维度的偏差的起源，而不管其是基于处理还是计量学。 可以向前馈送先前工艺工具的晶片处理变化的调整，并且可以在半导体晶片的处理期间自动地反馈过程和/或集成度量工具的调整。 本发明实施过程参考晶片以确定一种模式中的原点，以及测量参考晶片以确定另一种模式中偏差的起点。

公开(公告)号：US07305322B2

公开(公告)日：2007-12-04

申请号：US11396112

申请日：2006-03-31

Applicant: Merritt Funk ,  Daniel Prager

Inventor： Merritt Funk ,  Daniel Prager

IPC: G01B7/00 ,  G01B11/02

CPC classification number: G01R31/307 ,  G01R31/2846

Abstract: To determine the profile of an integrated circuit structure, a signal is measured off the structure with a metrology device. The measured signal is compared to signals in a virtual profile library. The comparison is stopped if matching criteria are met. A subset of a virtual profile data space is determined when the matching criteria are not met. The subset is determined using profile data space associated with the library. A virtual profile signal of the subset is selected. Virtual profile shape/parameters are determined based on the virtual profile signal. A difference is calculated between the measured and virtual profile signals. The difference is compared to virtual profile library creation criteria. If the criteria are met, then the structure is identified using virtual profile data, which includes the virtual profile shape/parameters, associated with the virtual profile signal. Or, if the criteria are not met, then a corrective action is applied.

Abstract translation: 为了确定集成电路结构的轮廓，使用测量装置测量结构的信号。 将测量的信号与虚拟简档库中的信号进行比较。 如果符合匹配条件，则比较停止。 当匹配条件不满足时确定虚拟简档数据空间的子集。 使用与库相关联的简档数据空间确定子集。 选择该子集的虚拟简档信号。 基于虚拟轮廓信号确定虚拟轮廓形状/参数。 在测量和虚拟简档信号之间计算差异。 将差异与虚拟简档库创建标准进行比较。 如果满足标准，则使用与虚拟简档信号相关联的虚拟简档数据（包括虚拟简档形状/参数）来识别结构。 或者，如果不符合标准，则应用纠正措施。