公开(公告)号：US10957518B2

公开(公告)日：2021-03-23

申请号：US16828694

申请日：2020-03-24

Applicant: Applied Materials, Inc.

Inventor： Kartik Ramaswamy ,  Lawrence Wong ,  Steven Lane ,  Yang Yang ,  Srinivas D. Nemani ,  Praburam Gopalraja

IPC: H01J37/32 ,  H01H1/46

Abstract: A plasma reactor includes a processing chamber having a lower processing portion having an axis of symmetry and an array of cavities extending upwardly from the lower processing portion. A gas distributor couples plural gas sources to a plurality of gas inlets of the cavities, and the gas distributor includes a plurality of valves with each valve selectively connecting a respective gas inlet to one of the plural gas sources. Power is applied by an array of conductors that includes a respective conductor for each respective cavity with each conductor adjacent and surrounding a cavity. A power distributor couples a power source and the array of conductors, and the power distributor includes a plurality of switches with a switch for each respective conductor.

公开(公告)号：US10947621B2

公开(公告)日：2021-03-16

申请号：US16126760

申请日：2018-09-10

Applicant: Applied Materials, Inc.

Inventor： Adib Khan ,  Qiwei Liang ,  Srinivas D. Nemani ,  Tobin Kaufman-Osborn

IPC: C23C16/455 ,  C23C16/448 ,  C23C16/44 ,  C07F15/00

Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.

公开(公告)号：US10916505B2

公开(公告)日：2021-02-09

申请号：US16536603

申请日：2019-08-09

Applicant: Applied Materials, Inc.

Inventor： Yong Wu ,  Srinivas Gandikota ,  Abhijit Basu Mallick ,  Srinivas D. Nemani

IPC: H01L23/532 ,  H01L21/285 ,  H01L21/768 ,  C23C16/455 ,  C23C16/26 ,  H01L21/3205 ,  H01L27/115

Abstract: A graphene barrier layer is disclosed. Some embodiments relate to a graphene barrier layer capable of preventing diffusion from a fill layer into a substrate surface and/or vice versa. Some embodiments relate to a graphene barrier layer that prevents diffusion of fluorine from a tungsten layer into the underlying substrate. Additional embodiments relate to electronic devices which contain a graphene barrier layer.

公开(公告)号：US10892161B2

公开(公告)日：2021-01-12

申请号：US16169610

申请日：2018-10-24

Applicant: Applied Materials, Inc.

Inventor： Biao Liu ,  Cheng Pan ,  Erica Chen ,  Srinivas D. Nemani ,  Chang Ke ,  Lei Zhou

IPC: H01L21/02 ,  H01L23/31 ,  H01L21/768 ,  H01L23/29 ,  H01L21/3105 ,  H01L21/321 ,  C23C16/00 ,  B05D1/18 ,  H01L21/32

Abstract: Methods for depositing desired materials formed on certain locations of a substrate with desired materials using a selective deposition process for semiconductor applications are provided. In one embodiment, a method of forming a structure with desired materials on a substrate includes supplying a first gas comprising a hydroxy terminated hydrocarbon containing material to a surface of a substrate, selectively forming a passivation layer on a first material of the substrate, selectively forming self assembled monolayers on a second material of the substrate, and selectively forming a material layer on the passivation layer.

公开(公告)号：US10811250B2

公开(公告)日：2020-10-20

申请号：US16027783

申请日：2018-07-05

Applicant: Applied Materials, Inc.

Inventor： Atashi Basu ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/34 ,  H01L21/02 ,  C23C16/452 ,  C23C16/56 ,  C23C16/505 ,  C23C16/04 ,  C23C16/455

Abstract: Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

公开(公告)号：US20200283898A1

公开(公告)日：2020-09-10

申请号：US16809318

申请日：2020-03-04

Applicant: Applied Materials, Inc. ,  The Regents of the Univeristy of California

Inventor： Jong Choi ,  Christopher Ahles ,  Andrew C. Kummel ,  Keith Tatseun Wong ,  Srinivas D. Nemani

IPC: C23C16/455 ,  H01L21/285 ,  H01L21/02 ,  C23C16/40 ,  C23C16/458

Abstract: Methods for depositing a metal containing material formed on a certain material of a substrate using an atomic layer deposition process for semiconductor applications are provided. In one embodiment, a method of forming a metal containing material on a substrate comprises pulsing a first gas precursor comprising a metal containing precursor to a surface of a substrate, pulsing a second gas precursor comprising a silicon containing precursor to the surface of the substrate, forming a metal containing material selectively on a first material of the substrate, and thermal annealing the metal containing material formed on the substrate.

公开(公告)号：US10714331B2

公开(公告)日：2020-07-14

申请号：US16354654

申请日：2019-03-15

Applicant: Applied Materials, Inc.

Inventor： Mihaela Balseanu ,  Srinivas D. Nemani ,  Mei-Yee Shek ,  Ellie Y. Yieh

IPC: H01L21/02 ,  H01L29/66 ,  C23C16/46 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

Abstract: A method for forming a thermally stable spacer layer is disclosed. The method includes first disposing a substrate in an internal volume of a processing chamber. The substrate has a film formed thereon, the film including silicon, carbon, nitrogen, and hydrogen. Next, high pressure steam is introduced into the processing chamber. The film is exposed to the high pressure steam to convert the film to reacted film, the reacted film including silicon, carbon, oxygen, and hydrogen.

公开(公告)号：US10692734B2

公开(公告)日：2020-06-23

申请号：US16171053

申请日：2018-10-25

Applicant: APPLIED MATERIALS, INC.

Inventor： Jong Mun Kim ,  Chentsau Chris Ying ,  He Ren ,  Srinivas D. Nemani ,  Ellie Yieh

IPC: H01L23/52 ,  H01L21/3213 ,  H01L23/532

Abstract: Methods and apparatus for processing a substrate and etching a nickel silicide layer are provided herein. In some embodiments, a method of etching a nickel silicide film in a semiconductor device include: contacting a nickel silicide film disposed on a substrate in a process chamber with an etching gas sufficient to form one or more soluble or volatile products in order to reduce or eliminate re-deposition of products formed from the nickel silicide film upon the nickel silicide film.

公开(公告)号：US10590530B2

公开(公告)日：2020-03-17

申请号：US16290786

申请日：2019-03-01

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.

公开(公告)号：US10240232B2

公开(公告)日：2019-03-26

申请号：US15184670

申请日：2016-06-16

Applicant: Applied Materials, Inc.

Inventor： Qiwei Liang ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: C23C16/455 ,  C23C16/44

Abstract: A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.