公开(公告)号：US06577511B2

公开(公告)日：2003-06-10

申请号：US10090152

申请日：2002-03-05

申请人： Satoshi Yamaguchi ,  Akio Nishida ,  Hiroshi Takemura

发明人： Satoshi Yamaguchi ,  Akio Nishida ,  Hiroshi Takemura

IPC分类号： H02M3335

CPC分类号： H02M3/3385 ,  H02M2001/0032 ,  Y02B70/16

摘要： A switching power supply unit includes a control circuit including a turn-off circuit for turning of a first switch element Q1, which has been in an ON state, and an off-period control circuit for, based on a feedback signal from an output-voltage detecting circuit, controlling the turning-on of the first switch element to be further delayed as a load is lighter. The off-period control circuit includes a transistor as a second switch element which is provided in series between a feedback winding and the control terminal of the first switch element and which is controlled to be turned on and off based on the feedback signal from the output-voltage detecting circuit. A switching frequency is set to be lower as the load is lighter, such that power consumption at the light load is reduced.

公开(公告)号：US06529392B2

公开(公告)日：2003-03-04

申请号：US09948281

申请日：2001-09-06

申请人： Akio Nishida ,  Ryota Tani ,  Koji Nakahira

发明人： Akio Nishida ,  Ryota Tani ,  Koji Nakahira

IPC分类号： H02M3335

CPC分类号： H02M3/3385

摘要： An RCC type switching power supply unit with a transformer having a primary winding, a secondary winding, and a feedback winding, a main switching element receiving a feedback signal from the feedback winding and for turning on and off the current of the primary winding, a rectifying and smoothing circuit having a rectifying element and a smoothing element connected to the secondary winding, and a control circuit connected between the feedback winding and the control terminal of the main switching element. A delay circuit by which the turning on of the main switching element is prohibited for a certain period of time after the current of the rectifying element has become zero and a switching circuit by which the delay time of the delay circuit is changed by two or more stages are provided.

公开(公告)号：US06204184B1

公开(公告)日：2001-03-20

申请号：US09276969

申请日：1999-03-26

申请人： Akio Nishida ,  Kikuo Kusukawa ,  Toshiaki Yamanaka ,  Natsuki Yokoyama ,  Shinichiro Kimura ,  Norio Suzuki ,  Osamu Tsuchiya ,  Atsushi Ogishima

发明人： Akio Nishida ,  Kikuo Kusukawa ,  Toshiaki Yamanaka ,  Natsuki Yokoyama ,  Shinichiro Kimura ,  Norio Suzuki ,  Osamu Tsuchiya ,  Atsushi Ogishima

IPC分类号： H01L21302

CPC分类号： H01L27/10894 ,  H01L21/31053 ,  H01L21/76229 ,  H01L21/823437 ,  H01L21/823481 ,  H01L27/10814

摘要： In a method of manufacturing a semiconductor device having a memory mat portion in which an active region and a field region are formed densely, after a polishing stopper film is deposited on a semiconductor substrate, there are formed grooves by etching a polishing stopper film of a field region and the semiconductor substrate. Then, after an insulating film is deposited so as to fill the grooves, the insulating film is partly removed from the memory mat portion by etching. Under this state, the insulating film is chemically mechanically polished until the polishing stopper film is exposed. The film thickness of the polishing stopper film on the active region can be reduced, and an electrical element isolation characteristic of the field region can be improved. At the same time, upon chemical mechanical polishing, a silicon substrate can be prevented from being exposed at the central portion of the memory mat portion and the insulating film can be prevented from being left on the silicon nitride film near the outer periphery, thereby making it possible to form elements having uniform electrical characteristics on all active regions of the memory mat portion.

摘要翻译： 在制造半导体器件的方法中，其具有密集形成有源区和场区的存储垫部分，在半导体衬底上沉积抛光阻挡膜之后，通过蚀刻抛光阻挡膜形成凹槽 场区域和半导体衬底。 然后，在沉积绝缘膜以填充凹槽之后，通过蚀刻将绝缘膜部分地从存储垫部分除去。 在这种状态下，绝缘膜被化学机械抛光直到抛光阻挡膜露出。 能够减少有源区域上的研磨停止膜的膜厚，能够提高场区域的电气元件隔离特性。 同时，在化学机械抛光时，可以防止硅衬底暴露在存储垫部分的中心部分，并且可以防止绝缘膜留在靠近外周的氮化硅膜上，从而使 可以在存储垫部分的所有有效区域上形成具有均匀电特性的元件。

公开(公告)号：US5523592A

公开(公告)日：1996-06-04

申请号：US189865

申请日：1994-02-01

申请人： Kiyokazu Nakagawa ,  Akio Nishida ,  Toshikazu Shimada

发明人： Kiyokazu Nakagawa ,  Akio Nishida ,  Toshikazu Shimada

IPC分类号： H01L27/15 ,  H01L33/34 ,  H01S5/026 ,  H01S5/183 ,  H01S5/34 ,  H01L33/00 ,  H01L31/0312 ,  H01S3/19

CPC分类号： H01L33/34 ,  B82Y20/00 ,  H01L27/15 ,  H01S5/0262 ,  H01S5/183 ,  H01S5/3427

摘要： By i) forming a layered structure of an undoped single crystalline Si layer and single crystalline Si.sub.0.8 Ge.sub.0.2 mixed crystal layer on an n-Si(100) substrate, a second undoped single crystalline Si layer on it, and a p type hydrogenated amorphous Si.sub.1-B C.sub.B layer on it, iii) mounting an n-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer and Si.sub.0.8 Ge.sub.0.2 layer, an undoped single crystalline Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer, and a p-Si.sub.0.55 Ge.sub.0.40 C.sub.0.05 layer sequentially on it or iv) mounting an n type single crystalline Si layer on an n-Si(100) substrate and forming a layered structure of an undoped single crystalline Si layer and Si.sub.0.8 Ge.sub.0.1 Sn.sub.0.1 layer, an undoped single crystalline Si layer, and a p type single crystalline Si layer sequentially on it, a semiconductor optical device is obtained.

摘要翻译： i）在n-Si（100）衬底上形成未掺杂的单晶Si层和单晶Si0.8Ge0.2混合晶层的层状结构，其上第二未掺杂单晶Si层和ap型氢化无定形 Si1-BCB层，iii）在n-Si（100）衬底上安装n-Si0.55Ge0.40C0.05层，并形成未掺杂的单晶Si0.55Ge0.40C0.05层和Si0 8Ge0.2层，未掺杂的单晶Si0.55Ge0.40C0.05层和p-Si0.55Ge0.40C0.05层，或者iv）在n-Si上安装n型单晶Si层 （100）衬底并依次形成未掺杂的单晶Si层和Si0.8Ge0.1Sn0.1层，未掺杂的单晶Si层和ap型单晶Si层的层状结构，得到半导体光学器件 。

公开(公告)号：US4721610A

公开(公告)日：1988-01-26

申请号：US798887

申请日：1985-11-18

申请人： Kozaburo Yoshida ,  Akio Nishida ,  Akira Ueki

发明人： Kozaburo Yoshida ,  Akio Nishida ,  Akira Ueki

IPC分类号： C01B13/24 ,  B01J12/00 ,  B01J19/26 ,  B01J20/28 ,  C01B13/20 ,  C01F5/04 ,  C01F11/02

CPC分类号： B82Y30/00 ,  B01J12/005 ,  B01J19/26 ,  C01B13/20 ,  C01F11/02 ,  C01F5/04 ,  C01P2004/51 ,  C01P2004/62 ,  C01P2004/64

摘要： Very small and uniform metal oxide particles are produced by a process including the steps of ejecting a metal vapor-containing gas into a metal-oxidizing region through a nozzle and ejecting a molecular oxygen-containing gas into the metal-oxidizing region through another nozzle in such a manner that the streams of the metal vapor-containing gas and the molecular oxygen-containing gas are smashed into each other to produce a turbulent flow diffusing flame in which the metal vapor is oxidized into very small and uniform metal oxide particles.

摘要翻译： 通过以下方法制造非常小且均匀的金属氧化物颗粒，该方法包括以下步骤：通过喷嘴将含金属蒸气的气体喷射到金属氧化区域中，并通过另一个喷嘴将含分子氧的气体喷射到金属氧化区域 使含有金属蒸气的气体和含分子氧气体的气流彼此粉碎以产生湍流扩散火焰，其中金属蒸气被氧化成非常小且均匀的金属氧化物颗粒。