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    Electromechanical three-trace junction devices
    92.
    发明授权
    Electromechanical three-trace junction devices 失效
    机电三迹交界器件

    公开(公告)号：US07176505B2

    公开(公告)日：2007-02-13

    申请号：US10802900

    申请日：2004-03-17

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Claude Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Claude Bertin

    IPC分类号： H01L27/10

    CPC分类号： G11C11/56 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/77 ,  H01H1/0094 ,  Y10S977/742 ,  Y10S977/932 ,  Y10S977/936 ,  Y10S977/943

    摘要： Three trace electromechanical circuits and methods of using same. A circuit includes first and second electrically conductive elements with a nanotube ribbon (or other electromechanical elements) disposed therebetween. An insulative layer is disposed on one of the first and second conductive elements. The nanotube ribbon is movable toward at least one of the first and second electrically conductive elements in response to electrical stimulus applied to at least one of the first and second electrically conductive elements and the nanotube ribbon. Such circuits may be formed into arrays of cells. One of the conductive elements may be used to create an attractive force to cause the nanotube ribbon to contact a conductive element, and the other of the conductive elements may be used to create an attractive force to pull the nanotube ribbon from contact with the contacted conductive element. The electrically conductive traces may be aligned or unaligned with one another.

    摘要翻译： 三轨迹机电回路及其使用方法。 电路包括第一和第二导电元件，其间设置有纳米管带（或其他机电元件）。 绝缘层设置在第一和第二导电元件之一上。 响应于施加到第一和第二导电元件和纳米管带中的至少一个的电刺激，纳米管带可朝着第一和第二导电元件中的至少一个移动。 这样的电路可以形成为电池阵列。 可以使用导电元件之一来产生引导纳米管带与导电元件接触的吸引力，并且另一导电元件可用于产生吸引力以将纳米管带从接触导电 元件。 导电迹线可以彼此对准或不对准。

    Four terminal non-volatile transistor device
    93.
    发明授权
    Four terminal non-volatile transistor device 有权
    四端子非易失性晶体管器件

    公开(公告)号：US07075141B2

    公开(公告)日：2006-07-11

    申请号：US10811191

    申请日：2004-03-26

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Bernard Vogeli ,  Darren K. Brock ,  Venkatachalam C. Jaiprakash ,  Claude L. Bertin

    IPC分类号： H01L27/10 ,  H01L29/788

    CPC分类号： G11C23/00 ,  B82Y10/00 ,  G11C13/025 ,  G11C16/0416 ,  G11C2213/17 ,  H01L27/115 ,  H01L29/7881 ,  Y10S977/708 ,  Y10S977/932

    摘要： A four terminal non-volatile transistor device. A non-volatile transistor device includes a source region and a drain region of a first semiconductor type of material and each in electrical communication with a respective terminal. A channel region of a second semiconductor type of material is disposed between the source and drain region. A floating gate structure is made of at least one of semiconductive or conductive material and is disposed over the channel region. A control gate is made of at least one of semiconductive or conductive material and is in electrical communication with a respective terminal. An electromechanically-deflectable nanotube switching element is in electrical communication with one of the floating gate structure and the control gate structure, and is positioned to be electromechanically deflectable into contact with the other of the floating gate structure and the control gate structure. When the nanotube switching element is in communication with both the control gate and the floating gate, the control gate may be used to modulate the conductivity of the channel region. The nanotube switching element may be formed from a porous fabric of a monolayer of single-walled carbon nanotubes. Under certain embodiments, the nanotube article is suspended vertically in relation to the horizontal substrate. Under certain embodiments, a release gate and release node are positioned in spaced relation to the nanotube switching element, and, in response to a signal on the release node, the release gate electromechanically deflects the nanotube switching element out of contact with the one of the control gate and floating gate. Under certain embodiments, the contact between the nanotube switching element and the one of the control gate and floating gate is a non-volatile state. Under certain embodiments, the device occupies an area of 8F2.

    摘要翻译： 四端非易失性晶体管器件。 非挥发性晶体管器件包括第一半导体类型的材料的源极区域和漏极区域，并且各自与相应的端子电连通。 第二半导体类型的材料的沟道区域设置在源区和漏区之间。 浮栅结构由半导体或导电材料中的至少一种制成，并且设置在沟道区域上。 控制门由半导体或导电材料中的至少一种制成，并与相应的端子电连通。 机电可偏转的纳米管开关元件与浮动栅极结构和控制栅极结构中的一个电连通，并且被定位成机电可偏转地与浮动栅极结构和控制栅极结构中的另一个接触。 当纳米管开关元件与控制栅极和浮置栅极两者连通时，控制栅极可用于调制沟道区的导电性。 纳米管切换元件可以由单壁碳纳米管单层的多孔织物形成。 在某些实施例中，纳米管制品相对于水平基底垂直悬挂。 在某些实施例中，释放栅极和释放节点以与纳米管开关元件隔开的关系定位，并且响应于释放节点上的信号，释放门电磁机械地使纳米管开关元件偏转与 控制门和浮动门。 在某些实施例中，纳米管开关元件与控制栅极和浮置栅极之间的接触是非易失性状态。 在某些实施例中，该装置占据8F 2的面积。

    Methods of making electromechanical three-trace junction devices
    95.
    发明授权
    Methods of making electromechanical three-trace junction devices 有权
    制造机电三迹结装置的方法

    公开(公告)号：US06784028B2

    公开(公告)日：2004-08-31

    申请号：US10033032

    申请日：2001-12-28

    申请人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    发明人： Thomas Rueckes ,  Brent M. Segal ,  Darren K. Brock

    IPC分类号： H01L2182

    CPC分类号： H01L21/76838 ,  B81C1/00142 ,  B81C2201/019 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  G11C2213/16 ,  G11C2213/81 ,  H01H1/0094 ,  Y10S977/734

    摘要： Methods of producing an electromechanical circuit element are described. A lower structure having lower support structures and a lower electrically conductive element is provided. A nanotube ribbon (or other electromechanically responsive element) is formed on an upper surface of the lower structure so as to contact the lower support structures. An upper structure is provided over the nanotube ribbon. The upper structure includes upper support structures and an upper electrically conductive element. In some arrangements, the upper and lower electrically conductive elements are in vertical alignment, but in some arrangements they are not.

    摘要翻译： 描述制造机电电路元件的方法。 提供具有较低支撑结构和较低导电元件的下部结构。 纳米管带（或其他机电响应元件）形成在下结构的上表面上以便接触下支撑结构。 在纳米管带上提供上部结构。 上部结构包括上部支撑结构和上部导电元件。 在一些布置中，上和下导电元件是垂直对准的，但在某些布置中它们不是。

    Method and system of using nanotube fabrics as joule heating elements for memories and other applications
    96.
    发明授权
    Method and system of using nanotube fabrics as joule heating elements for memories and other applications 有权
    使用纳米管织物作为焦耳加热元件的方法和系统用于存储器和其他应用

    公开(公告)号：US08525143B2

    公开(公告)日：2013-09-03

    申请号：US12066053

    申请日：2006-09-06

    申请人： Jonathan W. Ward ,  Thomas Rueckes ,  Mitchell Meinhold ,  Brent M. Segal

    发明人： Jonathan W. Ward ,  Thomas Rueckes ,  Mitchell Meinhold ,  Brent M. Segal

    IPC分类号： H01L45/00

    CPC分类号： H01L45/1286 ,  B82Y10/00 ,  G11C13/0004 ,  G11C13/025 ,  G11C2213/81 ,  H01L27/2436 ,  H01L45/06 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/144

    摘要： Methods and systems of using nanotube elements as joule heating elements for memories and other applications. Under one aspect, a method includes providing an electrical stimulus, regulated by a drive circuit, through a nanotube element in order to heat an adjacent article. Further, a detection circuit electrically gauges the state of the article. The article heated by the nanotube element is, in preferred embodiments, a phase changing material, hi memory applications, the invention may be used as a small-scale CRAM capable of employing small amounts of current to induce rapid, large temperature changes in a chalcogenide material. Under various embodiments of the disclosed invention, the nanotube element is composed of a non-woven nanotube fabric which is either suspended from supports and positioned adjacent to the phase change material or is disposed on a substrate and in direct contact with the phase change material. A plurality of designs using various geometric orientations of nanotube fabrics, phase change materials, and drive and detection circuitry is disclosed. Additionally, methods of fabricating nanotube heat emitters are disclosed.

    摘要翻译： 使用纳米管元件作为焦耳加热元件用于存储器和其他应用的方法和系统。 在一个方面，一种方法包括通过纳米管元件提供由驱动电路调节的电刺激，以加热邻近的物品。 此外，检测电路电测量物品的状态。 在优选实施例中，由纳米管元​​件加热的物品是相变材料。在记忆应用中，本发明可以用作能够使用少量电流以在硫族化物中快速，大的温度变化的小规模CRAM 材料。 在所公开的发明的各种实施例中，纳米管元件由无纺布纳米管织物组成，该无纺布纳米管织物从支撑物悬挂并且邻近相变材料定位，或者设置在基底上并与相变材料直接接触。 公开了使用纳米管织物，相变材料以及驱动和检测电路的各种几何取向的多个设计。 另外，公开了制造纳米管热发射体的方法。

    Two-terminal nanotube devices including a nanotube bridge and methods of making same
    99.
    发明授权
    Two-terminal nanotube devices including a nanotube bridge and methods of making same 有权
    包括纳米管桥的两端纳米管装置及其制造方法

    公开(公告)号：US08134220B2

    公开(公告)日：2012-03-13

    申请号：US12139910

    申请日：2008-06-16

    申请人： H. Montgomery Manning ,  Thomas Rueckes ,  Jonathan W. Ward ,  Brent M. Segal

    发明人： H. Montgomery Manning ,  Thomas Rueckes ,  Jonathan W. Ward ,  Brent M. Segal

    IPC分类号： G11C11/00 ,  H01L23/52 ,  H01L21/02

    CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/025 ,  H01L51/0048 ,  Y10S977/943

    摘要： Nanotube switching devices having nanotube bridges are disclosed. Two-terminal nanotube switches include conductive terminals extending up from a substrate and defining a void in the substrate. Nantoube articles are suspended over the void or form a bottom surface of a void. The nanotube articles are arranged to permanently contact at least a portion of the conductive terminals. An electrical stimulus circuit in communication with the conductive terminals is used to generate and apply selected waveforms to induce a change in resistance of the device between relatively high and low resistance values. Relatively high and relatively low resistance values correspond to states of the device. A single conductive terminal and a interconnect line may be used. The nanotube article may comprise a patterned region of nanotube fabric, having an active region with a relatively high or relatively low resistance value. Methods of making each device are disclosed.

    摘要翻译： 公开了具有纳米管桥的纳米管开关器件。 两端纳米管开关包括从衬底向上延伸并且在衬底中限定空隙的导电端子。 纳米管制品悬浮在空隙上或形成空隙的底部表面。 纳米管制品布置成永久地接触导电端子的至少一部分。 使用与导电端子连通的电刺激电路来产生并施加所选择的波形以引起器件在较高和较低电阻值之间的电阻变化。 相对较高且相对较低的电阻值对应于器件的状态。 可以使用单个导电端子和互连线。 纳米管制品可以包括具有相对较高或相对低的电阻值的有源区的纳米管织物的图案化区域。 公开了制造每个装置的方法。