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    Method and circuit for switching a memristive device in an array
    2.
    发明授权
    Method and circuit for switching a memristive device in an array 有权
    用于在阵列中切换忆阻器的方法和电路

    公开(公告)号：US08971091B2

    公开(公告)日：2015-03-03

    申请号：US13884140

    申请日：2011-01-31

    Applicant: Wei Yi ,  Muhammad Shakeel Qureshi ,  Frederick Perner ,  Richard Carter

    Inventor： Wei Yi ,  Muhammad Shakeel Qureshi ,  Frederick Perner ,  Richard Carter

    IPC: G11C11/00 ,  G11C13/00 ,  H01L27/10

    CPC classification number: G11C13/0069 ,  G11C13/0007 ,  G11C2013/0066 ,  G11C2013/0078 ,  G11C2213/32 ,  G11C2213/55 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/101

    Abstract: A method of switching a memristive device in a two-dimensional array senses a leakage current through the two-dimensional array when a voltage of half of a switching voltage is applied to a row line of the memristive device. A leakage compensation current is generated according to the sensed leakage current, and a switching current ramp is also generated. The leakage compensation current and the switching current ramp are combined to form a combined switching current, which is applied to the row line of the memristive device. When a resistance of the memristive device reaches a target value, the combined switching current is removed from the row line.

    Abstract translation: 当二维阵列中的忆阻器件的切换被施加到忆阻器件的行线上时，通过二维阵列切换忆阻器件的方法来感测通过二维阵列的漏电流。 根据检测到的漏电流产生泄漏补偿电流，并且还产生开关电流斜坡。 泄漏补偿电流和开关电流斜坡组合形成组合开关电流，其被施加到忆阻器件的行线。 当忆阻器件的电阻达到目标值时，组合的开关电流从行线上去除。

    SYSTEMS AND METHODS FOR DIRECT COMMUNICATION BETWEEN MAGNETIC TUNNEL JUNCTIONS
    4.
    发明申请
    SYSTEMS AND METHODS FOR DIRECT COMMUNICATION BETWEEN MAGNETIC TUNNEL JUNCTIONS 有权
    用于直接通信的系统和方法在磁性隧道结之间

    公开(公告)号：US20120314489A1

    公开(公告)日：2012-12-13

    申请号：US13475544

    申请日：2012-05-18

    Applicant: David J. Lilja ,  Jian-Ping Wang ,  Andrew P. Lyle ,  Shruti R. Patil ,  Jonathan D. Harms ,  Xiaofeng Yao

    Inventor： David J. Lilja ,  Jian-Ping Wang ,  Andrew P. Lyle ,  Shruti R. Patil ,  Jonathan D. Harms ,  Xiaofeng Yao

    IPC: H01L29/82 ,  G11C11/16

    CPC classification number: G11C11/1673 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1675 ,  G11C2213/81

    Abstract: Systems and methods that enable direct communications between magnetic tunnel junctions are provided. In one embodiment, a device includes multiple input magnetic tunnel junctions and an output magnetic tunnel junction. The multiple input magnetic tunnel junctions are connected in parallel, and the output magnetic tunnel junction is connected in series to the input magnetic tunnel junctions. In another embodiment, a device includes a first magnetic tunnel junction, a second magnetic tunnel junction, and a nano-magnetic channel. Each of the first and the second magnetic tunnel junctions has a free layer, a nonmagnetic layer, and a fixed layer. The nano-magnetic channel connects the free layer of the first magnetic tunnel junction to the free layer of the second magnetic tunnel junction.

    Abstract translation: 提供了能够实现磁性隧道结之间直接通信的系统和方法。 在一个实施例中，设备包括多个输入磁隧道结和输出磁性隧道结。 多输入磁隧道结并联连接，输出磁隧道结串联输入磁隧道结。 在另一实施例中，器件包括第一磁性隧道结，第二磁性隧道结和纳米磁通道。 第一和第二磁隧道结中的每一个具有自由层，非磁性层和固定层。 纳米磁通道将第一磁性隧道结的自由层连接到第二磁性隧道结的自由层。

    Memristor with a non-planar substrate
    5.
    发明授权
    Memristor with a non-planar substrate 有权
    带非平面基片的忆阻器

    公开(公告)号：US08283649B2

    公开(公告)日：2012-10-09

    申请号：US12510753

    申请日：2009-07-28

    Applicant: Alexandre M. Bratkovski ,  Shih Yuan Wang ,  Jianhua Yang ,  Michael Stuke

    Inventor： Alexandre M. Bratkovski ,  Shih Yuan Wang ,  Jianhua Yang ,  Michael Stuke

    IPC: H01L29/04

    CPC classification number: G11C13/0009 ,  G11C17/16 ,  G11C17/165 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146

    Abstract: A memristor includes a substrate having a plurality of protrusions, wherein each of the plurality of protrusions extends in a first direction, a first electrode provided over at least one of the plurality of protrusions, wherein the first electrode conforms to the shape of the at least one protrusion such that the first electrode has a crest, a switching material positioned upon the first electrode; and a second electrode positioned upon the switching material such that a portion of the second electrode is substantially in line with the crest of the first electrode along the first direction, wherein an active region in the switching material is operable to be formed between the crest of the first electrode and the portion of the second electrode that is substantially in line with the crest of the first electrode.

    Abstract translation: 忆阻器包括具有多个突起的基板，其中多个突起中的每一个在第一方向上延伸，第一电极设置在多个突起中的至少一个上，其中第一电极符合至少的形状 一个突起，使得第一电极具有峰顶，开关材料定位在第一电极上; 以及位于所述开关材料上的第二电极，使得所述第二电极的一部分沿着所述第一方向与所述第一电极的峰基本上一致，其中所述开关材料中的有源区可操作地形成在所述第一电极的顶部之间， 所述第一电极和所述第二电极的与所述第一电极的峰基本上一致的部分。

    Continuously variable graded artificial dielectrics using nanostructures
    7.
    发明授权
    Continuously variable graded artificial dielectrics using nanostructures 失效
    使用纳米结构的连续可变分级人造电介质

    公开(公告)号：US08089152B2

    公开(公告)日：2012-01-03

    申请号：US11589988

    申请日：2006-10-31

    Applicant: Jeffrey Miller

    Inventor： Jeffrey Miller

    IPC: H01L23/46

    CPC classification number: H01L29/4908 ,  B82Y10/00 ,  B82Y30/00 ,  G11C13/025 ,  G11C2213/16 ,  G11C2213/18 ,  G11C2213/81 ,  H01L29/0665 ,  H01L29/0673 ,  H01L51/0537 ,  H01L2924/0002 ,  Y10T428/249921 ,  Y10T428/249924 ,  H01L2924/00

    Abstract: Graded artificial dielectrics using nanostructures, such as nanowires, are disclosed. The graded artificial dielectric includes a material (typically a dielectric) with a plurality of nanostructures, such as nanowires, embedded within the dielectric material. One or more characteristics of the nanostructures are spatially varied from a first region within the dielectric to a second region within the dielectric to produce permittivity of the graded artificial dielectric that is spatially varied. The characteristics that can be varied include, but are not limited to, nanostructure density, nanostructure length, nanostructure aspect ratio, nanostructure oxide ratio, and nanostructure alignment. Methods of producing graded artificial dielectrics are also provided. A wide range of electronic devices such as antennas can use graded artificial dielectrics with nanostructures to improve performance.

    Abstract translation: 公开了使用纳米结构的分级人造电介质，例如纳米线。 分级人造电介质包括具有嵌入电介质材料内的多个纳米结构（如纳米线）的材料（通常为电介质）。 纳米结构的一个或多个特征在电介质内的第一区域在空间上变化到电介质内的第二区域，以产生在空间上变化的渐变人造电介质的介电常数。 可以变化的特征包括但不限于纳米结构密度，纳米结构长度，纳米结构长宽比，纳米结构氧化物比和纳米结构对准。 还提供了生产分级人造电介质的方法。 诸如天线的各种电子设备可以使用具有纳米结构的分级人造电介质来提高性能。

    Memristor with Nanostructure Electrodes
    9.
    发明申请
    Memristor with Nanostructure Electrodes 有权
    具有纳米结构电极的忆阻器

    公开(公告)号：US20110227032A1

    公开(公告)日：2011-09-22

    申请号：US13130830

    申请日：2009-01-15

    Applicant: Qiangfei Xia ,  Jing Tang

    Inventor： Qiangfei Xia ,  Jing Tang

    IPC: H01L45/00 ,  H01L27/24 ,  H01L21/62 ,  B82Y99/00 ,  B82Y10/00 ,  B82Y40/00

    CPC classification number: G11C13/0009 ,  B82Y10/00 ,  G11C13/0002 ,  G11C13/025 ,  G11C2213/33 ,  G11C2213/77 ,  G11C2213/81 ,  H01L27/101 ,  H01L27/2472 ,  H01L45/08 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146

    Abstract: A memristor having an active region includes a first electrode. The first electrode comprises a nanostructure formed of at least one metallic single walled nanotube. The memristor also includes a second electrode formed of at least one metallic single walled nanotube. The second electrode is positioned in a crossed relationship with respect to the first electrode. The memristor further includes a switching material positioned between the first electrode and the second electrode, in which the active region is configured to form in the switching material at a cross point of the first electrode and the second electrode.

    Abstract translation: 具有有源区的忆阻器包括第一电极。 第一电极包括由至少一个金属单壁纳米管形成的纳米结构。 忆阻器还包括由至少一个金属单壁纳米管形成的第二电极。 第二电极相对于第一电极以交叉的关系定位。 忆阻器还包括位于第一电极和第二电极之间的开关材料，其中有源区被配置为在开关材料中在第一电极和第二电极的交叉点处形成。

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