公开(公告)号：US07242430B2

公开(公告)日：2007-07-10

申请号：US10980639

申请日：2004-11-03

申请人： Dun-Nian Yaung ,  Ho-Ching Chien ,  Tzu-Hsuan Hsu

发明人： Dun-Nian Yaung ,  Ho-Ching Chien ,  Tzu-Hsuan Hsu

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H04N5/35509

摘要： An image sensor cell includes a first MOS transistor coupled to an operating voltage for providing an output voltage of the image sensor cell with the output voltage changing conformingly with a voltage on a gate of the first MOS transistor. A photodiode is coupled to a floating node which further controls the voltage of the gate of the first MOS transistor. A photoconductor is coupled between the operating voltage and the floating node. The photoconductor has its resistance varying in response to a magnitude change of an imposed illumination so that the floating node is provided with additional electrical charges conformingly through the photoconductor while the photodiode drains electrical charges, thereby decreasing a voltage reduction rate of the voltage on the gate of the first MOS transistor.

摘要翻译： 图像传感器单元包括耦合到工作电压的第一MOS晶体管，用于提供图像传感器单元的输出电压，输出电压与第一MOS晶体管的栅极上的电压一致地改变。 光电二极管耦合到浮动节点，其进一步控制第一MOS晶体管的栅极的电压。 光电导体耦合在工作电压和浮动节点之间。 光电导体的电阻响应于施加的照明的幅度变化而变化，使得浮动节点在光电二极管耗尽电荷的同时，通过光电导体顺序地被提供额外的电荷，从而降低栅极上的电压的电压降低率 的第一MOS晶体管。

公开(公告)号：US20060063294A1

公开(公告)日：2006-03-23

申请号：US11271116

申请日：2005-11-10

申请人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

发明人： Tzu-Hsuan Hsu ,  Shou-Gwo Wuu ,  Ho-Ching Chien ,  Dun-Nian Yaung

IPC分类号： H01L21/00

CPC分类号： H01L27/14632 ,  H01L27/1462

摘要： A plurality of apertures is formed in at least one first insulating layer disposed over a sensor formed in a semiconductor substrate. A second insulating layer is disposed over the at least one first insulating layer and the plurality of apertures in the at least one first insulating layer. The apertures form hollow regions in the at least one first insulating layer over the sensor, allowing more light or energy to pass through the at least one first insulating layer to the sensor, and increasing the sensitivity of the sensor.

摘要翻译： 在设置在形成于半导体衬底中的传感器上的至少一个第一绝缘层中形成多个孔。 第二绝缘层设置在至少一个第一绝缘层和至少一个第一绝缘层中的多个孔之上。 所述孔在所述传感器上的所述至少一个第一绝缘层中形成中空区域，允许更多的光或能量穿过所述至少一个第一绝缘层到所述传感器，并且增加所述传感器的灵敏度。

公开(公告)号：US10090349B2

公开(公告)日：2018-10-02

申请号：US13571099

申请日：2012-08-09

申请人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Meng-Hsun Wan ,  Szu-Ying Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/146

摘要： A device includes an image sensor chip having an image sensor therein. A read-out chip is underlying and bonded to the image sensor chip, wherein the read-out chip includes a logic device selected from the group consisting essentially of a reset transistor, a source follower, a row selector, and combinations thereof therein. The logic device and the image sensor are electrically coupled to each other, and are parts of a same pixel unit. A peripheral circuit chip is underlying and bonded to the read-out chip, wherein the peripheral circuit chip includes a logic circuit.

公开(公告)号：US09177986B2

公开(公告)日：2015-11-03

申请号：US13598275

申请日：2012-08-29

申请人： Wen-I Hsu ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Wen-De Wang

发明人： Wen-I Hsu ,  Min-Feng Kao ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Tzu-Hsuan Hsu ,  Wen-De Wang

IPC分类号： H01L29/00 ,  H01L27/146 ,  H01L29/06 ,  H01L21/762

CPC分类号： H01L27/14689 ,  H01L21/761 ,  H01L21/76237 ,  H01L27/1463 ,  H01L27/14643 ,  H01L29/0649

摘要： A system and method for isolating semiconductor devices is provided. An embodiment comprises an isolation region that is laterally removed from source/drain regions of semiconductor devices and has a dielectric material extending over the isolation implant between the source/drain regions. The isolation region may be formed by forming an opening through a layer over the substrate, depositing a dielectric material along the sidewalls of the opening, implanting ions into the substrate after the deposition, and filling the opening with another dielectric material.

摘要翻译： 提供一种用于隔离半导体器件的系统和方法。 一个实施例包括从半导体器件的源极/漏极区域侧向移除的隔离区域，并且具有在源极/漏极区域之间的隔离注入物上延伸的电介质材料。 可以通过在衬底上形成通过层的开口形成隔离区域，沿着开口的侧壁沉积电介质材料，在沉积之后将离子注入到衬底中，并用另一种电介质材料填充该开口。

公开(公告)号：US09048162B2

公开(公告)日：2015-06-02

申请号：US13615071

申请日：2012-09-13

申请人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Hsiao-Hui Tseng ,  Tzu-Hsuan Hsu

发明人： Min-Feng Kao ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Chun-Chieh Chuang ,  Hsiao-Hui Tseng ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/02 ,  H01L27/146 ,  H01L31/18 ,  H01L31/103

CPC分类号： H01L31/18 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464 ,  H01L27/14689 ,  H01L31/02 ,  H01L31/103 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A device includes a diode, which includes a first, a second, and a third doped region in a semiconductor substrate. The first doped region is of a first conductivity type, and has a first impurity concentration. The second doped region is of the first conductivity type, and has a second impurity concentration lower than the first impurity concentration. The second doped region encircles the first doped region. The third doped region is of a second conductivity type opposite the first conductivity type, wherein the third doped region overlaps a portion of the first doped region and a portion of the second doped region.

摘要翻译： 一种器件包括二极管，其包括半导体衬底中的第一，第二和第三掺杂区域。 第一掺杂区域是第一导电类型，并具有第一杂质浓度。 第二掺杂区域是第一导电类型，并且具有低于第一杂质浓度的第二杂质浓度。 第二掺杂区域包围第一掺杂区域。 第三掺杂区域具有与第一导电类型相反的第二导电类型，其中第三掺杂区域与第一掺杂区域的一部分和第二掺杂区域的一部分重叠。

公开(公告)号：US08981510B2

公开(公告)日：2015-03-17

申请号：US12794101

申请日：2010-06-04

申请人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

发明人： Chun-Chieh Chuang ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Keng-Yu Chou ,  Wen-De Wang ,  Pao-Tung Chen

IPC分类号： H01L31/0232 ,  H01L27/146

CPC分类号： H01L27/14685 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14689

摘要： Provided is an image sensor device. The image sensor device includes a substrate having a front side and a back side. The image sensor includes first and second radiation-detection devices that are disposed in the substrate. The first and second radiation-detection devices are operable to detect radiation waves that enter the substrate through the back side. The image sensor also includes an anti-reflective coating (ARC) layer. The ARC layer is disposed over the back side of the substrate. The ARC layer has first and second ridges that are disposed over the first and second radiation-detection devices, respectively. The first and second ridges each have a first refractive index value. The first and second ridges are separated by a substance having a second refractive index value that is less than the first refractive index value.

摘要翻译： 提供了一种图像传感器装置。 图像传感器装置包括具有正面和背面的基板。 图像传感器包括设置在基板中的第一和第二放射线检测装置。 第一和第二放射线检测装置可操作以检测通过背面进入衬底的辐射波。 图像传感器还包括抗反射涂层（ARC）层。 ARC层设置在基板的背面上。 ARC层具有分别设置在第一和第二辐射检测装置上的第一和第二脊。 第一和第二脊各自具有第一折射率值。 第一和第二脊由具有小于第一折射率值的第二折射率值的物质分开。

公开(公告)号：US08816457B2

公开(公告)日：2014-08-26

申请号：US13549792

申请日：2012-07-16

申请人： Jyh-Ming Hung ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chun-Chieh Chuang

发明人： Jyh-Ming Hung ,  Jen-Cheng Liu ,  Dun-Nian Yaung ,  Chun-Chieh Chuang

IPC分类号： H04N5/225

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/14632

摘要： The present disclosure provides various embodiments of an image sensor device. An exemplary image sensor device includes an image sensing region disposed in a substrate; a multilayer interconnection structure disposed over the substrate; and a color filter formed in the multilayer interconnection structure and aligned with the image sensing region. The color filter has a length and a width, where the length is greater than the width.

摘要翻译： 本公开提供了图像传感器装置的各种实施例。 示例性图像传感器装置包括设置在基板中的图像感测区域; 布置在所述基板上的多层互连结构; 以及形成在多层互连结构中并与图像感测区域对准的滤色器。 滤色片具有长度和宽度，其长度大于宽度。

公开(公告)号：US08710607B2

公开(公告)日：2014-04-29

申请号：US13547269

申请日：2012-07-12

申请人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Tzu-Jui Wang ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/18 ,  H01L31/02 ,  H01L27/146

CPC分类号： H01L27/14636 ,  H01L24/06 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/1464 ,  H01L2224/0603 ,  H01L2224/06131 ,  H01L2924/12043

摘要： Methods and apparatus for packaging a backside illuminated (BSI) image sensor or a BSI sensor device with an application specific integrated circuit (ASIC) are disclosed. A bond pad array may be formed in a bond pad area of a BSI sensor where the bond pad array comprises a plurality of bond pads electrically interconnected, wherein each bond pad of the bond pad array is of a small size which can reduce the dishing effect of a big bond pad. The plurality of bond pads of a bond pad array may be interconnected at the same layer of the pad or at a different metal layer. The BSI sensor may be bonded to an ASIC in a face-to-face fashion where the bond pad arrays are aligned and bonded together.

摘要翻译： 公开了用专用集成电路（ASIC）封装背面照明（BSI）图像传感器或BSI传感器装置的方法和装置。 接合焊盘阵列可以形成在BSI传感器的接合焊盘区域中，其中接合焊盘阵列包括电互连的多个接合焊盘，其中接合焊盘阵列的每个接合焊盘是小尺寸的，这可以减小凹陷效应 的大债券垫。 接合焊盘阵列的多个接合焊盘可以在焊盘的相同层处或在不同的金属层处互连。 BSI传感器可以以面对面的方式结合到ASIC，其中接合焊盘阵列对准并结合在一起。

公开(公告)号：US08513587B2

公开(公告)日：2013-08-20

申请号：US13012067

申请日：2011-01-24

申请人： Tzu-Jui Wang ,  Hsiao-Hui Tseng ,  Wei-Cheng Hsu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Tzu-Jui Wang ,  Hsiao-Hui Tseng ,  Wei-Cheng Hsu ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L27/00 ,  H01L31/00 ,  H01L29/80 ,  H01L21/02

CPC分类号： H01L27/1464 ,  H01L27/1461 ,  H01L27/14629

摘要： An image sensor the image sensor comprising an absorption layer disposed on a silicon substrate, the absorption layer having at least one of SiGe or Ge, and an antireflection layer disposed directly thereon.

摘要翻译： 图像传感器包括设置在硅衬底上的吸收层，所述吸收层具有SiGe或Ge中的至少一种，以及直接设置在其上的抗反射层。

公开(公告)号：US20120205730A1

公开(公告)日：2012-08-16

申请号：US13026994

申请日：2011-02-14

申请人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

发明人： Szu-Ying Chen ,  Pao-Tung Chen ,  Dun-Nian Yaung ,  Jen-Cheng Liu

IPC分类号： H01L31/113 ,  H01L31/18

CPC分类号： H01L27/1464 ,  H01L27/14609 ,  H01L27/1461 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides an image sensor device and a method of forming the image sensor device. In an example, an image sensor device includes a substrate having a front surface and a back surface; a sensor element disposed at the front surface of the substrate, the sensor element being operable to sense radiation projected toward the back surface of the substrate; and a transparent conductive layer disposed over the back surface of the substrate, the transparent conductive layer at least partially overlying the sensor element. The transparent conductive layer is configured for being electrically coupled to a bottom portion of the sensor element.

摘要翻译： 本公开提供了一种图像传感器装置和形成图像传感器装置的方法。 在一个示例中，图像传感器装置包括具有前表面和后表面的基板; 设置在所述基板的前表面处的传感器元件，所述传感器元件可操作以感测朝向所述基板的后表面投射的辐射; 以及设置在所述基板的所述背面上方的透明导电层，所述透明导电层至少部分地覆盖所述传感器元件。 透明导电层被配置为电耦合到传感器元件的底部。