公开(公告)号：US07221546B2

公开(公告)日：2007-05-22

申请号：US10833162

申请日：2004-04-28

申请人： Koichi Terunuma ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

发明人： Koichi Terunuma ,  Koji Shimazawa ,  Yoshihiro Tsuchiya

IPC分类号： G11B5/39 ,  G11B5/127

CPC分类号： G11B5/31 ,  Y10T29/49041 ,  Y10T29/49046

摘要： A longitudinal bias magnetic field control layer applies a counter bias magnetic field to a soft magnetic layer that is antiparallel (in opposite direction) to a longitudinal bias magnetic field. A magnitude of the counter bias magnetic field applied to the soft magnetic layer by the longitudinal bias magnetic field control layer is set smaller than that of the longitudinal bias magnetic field at a track center portion of the soft magnetic layer applied by a pair of bias magnetic field applying layers. A substantial longitudinal bias magnetic field is substantially applied to the soft magnetic layer in the same direction as that of the longitudinal bias magnetic field, and a magnitude of the substantial longitudinal bias magnetic field is maximum at both end portions of the soft magnetic layer and is weakened at the center portion of the soft magnetic layer.

摘要翻译： 纵向偏置磁场控制层将反偏置磁场施加到与纵向偏置磁场反平行（相反方向）的软磁性层。 通过纵向偏置磁场控制层施加到软磁性层的反向偏置磁场的大小被设定为小于通过一对偏置磁铁施加的软磁性层的轨道中心部分处的纵向偏置磁场的大小 场施加层。 基本的纵向偏置磁场基本上与纵向偏置磁场的方向相同地施加到软磁性层，并且在软磁性层的两个端部处，基本的纵向偏置磁场的大小最大，并且是 在软磁性层的中心部分变弱。

公开(公告)号：US20050270705A1

公开(公告)日：2005-12-08

申请号：US11141313

申请日：2005-06-01

申请人： Yoshihiro Tsuchiya ,  Koji Shimazawa

发明人： Yoshihiro Tsuchiya ,  Koji Shimazawa

IPC分类号： C22C38/00 ,  G11B5/127 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10

CPC分类号： B82Y25/00 ,  G11B5/3903 ,  H01F10/3263 ,  H01F10/3272 ,  H01F10/3295 ,  H01L43/10

摘要： In a structure in which an anti-ferromagnetic layer, a first ferromagnetic layer, a non-magnetic layer and a free layer are sequentially adjacent to each other, the first ferromagnetic layer is set so that a saturation magnetostriction is not greater than (+3)×10−5 and an exchange coupling magnetic field Hex between itself and the anti-ferromagnetic layer is not less than 48 (kA/m).

摘要翻译： 在其中反铁磁层，第一铁磁层，非磁性层和自由层彼此顺序相邻的结构中，第一铁磁层被设置为使得饱和磁致伸缩不大于（+ 3 ）x10 -5和其本身与反铁磁层之间的交换耦合磁场Hex不小于48（kA / m）。

公开(公告)号：US20050219766A1

公开(公告)日：2005-10-06

申请号：US11078580

申请日：2005-03-14

申请人： Takahiko Machita ,  Koji Shimazawa

发明人： Takahiko Machita ,  Koji Shimazawa

IPC分类号： G11B5/39 ,  G11B5/127 ,  G11B5/33 ,  H01L43/08

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/399 ,  G11B2005/3996

摘要： An MR element incorporates: a nonmagnetic conductive layer having two surfaces facing toward opposite directions; a free layer disposed adjacent to one of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the free layer changes in response to an external magnetic field; and a pinned layer disposed adjacent to the other of the surfaces of the nonmagnetic conductive layer, wherein the direction of magnetization in the pinned layer is fixed to the direction orthogonal to the air bearing surface. The MR element does not include any layer provided for fixing the direction of magnetization in the pinned layer. The pinned layer incorporates a ferromagnetic layer made of a ferromagnetic material having a positive magnetostriction constant. A bottom shield gap film and a top shield gap film disposed adjacent to the MR element each have a compressive stress of 600 MPa or greater.

摘要翻译： MR元件包括：具有朝向相反方向的两个表面的非磁性导电层; 邻近所述非磁性导电层的一个表面设置的自由层，其中所述自由层中的磁化方向响应于外部磁场而改变; 以及与非磁性导电层的另一个表面相邻设置的被钉扎层，其中被钉扎层中的磁化方向固定在与空气支承表面正交的方向上。 MR元件不包括用于固定钉扎层中的磁化方向的任何层。 钉扎层包含由具有正磁致伸缩常数的铁磁材料制成的铁磁层。 邻近MR元件设置的底部屏蔽间隙膜和顶部屏蔽间隙膜各自具有600MPa或更大的压缩应力。

公开(公告)号：US06943998B2

公开(公告)日：2005-09-13

申请号：US09824060

申请日：2001-04-03

申请人： Koji Shimazawa ,  Tsuyoshi Umehara ,  Satoru Araki

发明人： Koji Shimazawa ,  Tsuyoshi Umehara ,  Satoru Araki

IPC分类号： G11B5/31 ,  G11B5/012 ,  G11B5/39 ,  H01F10/32 ,  H01L43/08 ,  G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08

摘要： A tunnel magnetoresistive effective element has a ferromagnetic tunnel effective film with a free layer, a pinned layer and a tunnel barrier layer sandwiched between the free layer and the pinned layer, a magnetic bias means, a first conductive layer, and a second conductive layer. The magnetic bias means apply a bias magnetic field to the free layer of the ferromagnetic tunnel effective film. The first conductive layer and the second conductive layer generate magnetic fields having the same direction as that of the bias magnetic field through a sense current therein to reinforce the bias magnetic field.

摘要翻译： 隧道磁阻有效元件具有铁磁隧道有效膜，其具有夹在自由层和被钉扎层之间的自由层，钉扎层和隧道势垒层，磁偏置装置，第一导电层和第二导电层。 磁偏置装置对铁磁隧道有效膜的自由层施加偏置磁场。 第一导电层和第二导电层通过其中的感测电流产生具有与偏置磁场相同方向的磁场，以加强偏置磁场。

公开(公告)号：US20050013063A1

公开(公告)日：2005-01-20

申请号：US10889053

申请日：2004-07-13

申请人： Kosuke Tanaka ,  Koji Shimazawa ,  Koichi Terunuma ,  Tomoaki Shimizu

发明人： Kosuke Tanaka ,  Koji Shimazawa ,  Koichi Terunuma ,  Tomoaki Shimizu

IPC分类号： G11B5/39 ,  G11B5/33 ,  H01F10/16 ,  H01L43/08

CPC分类号： G11B5/3932 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  Y10T428/1107 ,  Y10T428/1121

摘要： A pair of domain control layers are disposed on both sides of the track width direction of the MR film so as to be separated from each other such that the MR film is held therebetween, and apply a longitudinal magnetic field to the MR film (free layer). The MR film is flanked by the domain control layers, each including a layer structure constituted by a base layer, a ferromagnetic layer, and a hard magnetic layer. The base layer causes the hard magnetic layer to have a magnetization direction aligning with an in-plane direction, so as to enhance the coercive force of the hard magnetic layer.

摘要翻译： 一对域控制层设置在MR膜的轨道宽度方向的两侧，以便彼此分离，使得MR膜保持在它们之间，并将纵向磁场施加到MR膜（自由层 ）。 MR膜侧面是域控制层，每个层包括由基层，铁磁层和硬磁性层构成的层结构。 基层使得硬磁性层具有与面内方向对准的磁化方向，以增强硬磁性层的矫顽力。

公开(公告)号：US06603642B1

公开(公告)日：2003-08-05

申请号：US09685891

申请日：2000-10-11

申请人： Satoru Araki ,  Koji Shimazawa

发明人： Satoru Araki ,  Koji Shimazawa

IPC分类号： G11B539

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3916 ,  G11B5/398 ,  G11B2005/3996

摘要： An object of the invention is to provide a magnetic transducer and a thin film magnetic head using the same, which can be manufactured by a simple manufacturing process and can obtain good output. The thin film magnetic head has a stack including a plurality of magnetic layers stacked alternately with a plurality of nonmagnetic layers. A layer having the fixed orientation of magnetization is formed on at least one side of the stack in the direction of stacking. The layer has a stacked structure comprising an antiferromagnetic layer and an exchange coupling layer exchange coupling with the antiferromagnetic layer. The magnetic layers of the stack are changed into a single magnetic domain by a magnetic field generated by exchange coupling between the antiferromagnetic layer and the exchange coupling layer so as to prevent Barkhausen noise. Since the layer is formed on at least one side of the stack in the direction of stacking, a manufacturing process is simplified.

摘要翻译： 本发明的目的是提供一种使用其的磁换能器和薄膜磁头，其可以通过简单的制造过程制造并且可以获得良好的输出。 薄膜磁头具有堆叠，其包括与多个非磁性层交替堆叠的多个磁性层。 具有固定的磁化取向的层在层叠方向的至少一侧上形成。 该层具有包括反铁磁层和与反铁磁层交换耦合的交换耦合层的堆叠结构。 通过由反铁磁层和交换耦合层之间的交换耦合产生的磁场将堆叠的磁层变成单个磁畴，以防止巴克豪森噪声。 由于层在层叠方向的至少一侧上形成，因此简化了制造工序。

公开(公告)号：US06483675B1

公开(公告)日：2002-11-19

申请号：US09538470

申请日：2000-03-30

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B582

CPC分类号： H01L43/08 ,  G11B5/3903 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film having a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, three indexes representing a surface roughness state of the tunnel barrier layer are set such that Ra≦1 nm, Rmax≦10 nm and Rrms≦1.2 nm, wherein Ra is one of the three indexes and representing the center line average roughness, Rmax is one of the three indexes and representing the maximum height, and Rrms is one of the three indexes and representing the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 在隧道磁阻效应元件中，包括具有隧道势垒层的隧道多层膜，铁磁自由层和铁磁性钉扎层，使得隧道势垒层保持在铁磁性自由层和铁磁性钉扎层之间，表示表面的三个指标 设置隧道阻挡层的粗糙度状态使得Ra <= 1nm，Rmax <= 10nm和Rrms <= 1.2nm，其中Ra是三个指标之一并且表示中心线平均粗糙度，Rmax是 三个指标，代表最大高度，Rrms是三个指标之一，代表标准差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06335081B1

公开(公告)日：2002-01-01

申请号：US09621088

申请日：2000-07-21

申请人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

发明人： Satoru Araki ,  Koji Shimazawa ,  Haruyuki Morita

IPC分类号： G11B566

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/7325 ,  G11B5/8404 ,  G11B2005/3996 ,  H01F10/3254 ,  H01F10/3268 ,  Y10S428/90 ,  Y10T428/1114 ,  Y10T428/1171 ,  Y10T428/24355

摘要： In a tunnel magnetoresistance effect element comprising a tunnel multilayered film on an under layer, the tunnel multilayered film has a tunnel barrier layer, a ferromagnetic free layer and a ferromagnetic pinned layer such that the tunnel barrier layer is held between the ferromagnetic free layer and the ferromagnetic pinned layer, wherein three indexes representing a surface roughness state of a surface, which faces the tunnel multilayered film, of the under layer are set such that Ra ≦0.5 nm, Rmax ≦5 nm and Rrms ≦0.55 nm, wherein Ra is one of the three indexes and represents the center line average roughness, Rmax is one of the three indexes and represents the maximum height, and Rrms is one of the three indexes and represents the standard deviation roughness. Thus, the tunnel magnetoresistance effect element exhibits improved characteristics, particularly, a large head output.

摘要翻译： 隧道磁阻效应元件包括在下层上的隧道多层膜，隧道多层膜具有隧道势垒层，铁磁自由层和铁磁性钉扎层，使隧道势垒层保持在铁磁自由层和 铁磁性钉扎层，其中表示下层的面向隧道多层膜的表面的表面粗糙度状态的三个指标被设置为使得Ra <= 0.5nm，Rmax <= 5nm和Rrms <= 0.55nm，其中 Ra是三个指标之一，代表中心线平均粗糙度，Rmax是三个指标之一，代表最大高度，Rrms是三个指标之一，代表标准偏差粗糙度。 因此，隧道磁阻效应元件表现出改善的特性，特别是大的磁头输出。

公开(公告)号：US06255814B1

公开(公告)日：2001-07-03

申请号：US09368672

申请日：1999-08-05

申请人： Koji Shimazawa ,  Satoru Araki

发明人： Koji Shimazawa ,  Satoru Araki

IPC分类号： G01R3302

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/455 ,  G11B2005/0008 ,  G11B2005/3996

摘要： A method for measuring bias magnetic field for controlling magnetic domain (longitudinal bias magnetic field) of a MR element has the step of applying an external measurement magnetic field onto the MR element which is biased with the magnetic field for controlling the magnetic domain (longitudinal bias magnetic field) in parallel to the direction of the bias magnetic field, the step of measuring &rgr;-H loop of the MR element (output resistance of MR element versus magnetic field strength loop) under the application of the external measurement magnetic field, and the step of determining a shifted amount of the measured &rgr;-H loop.

摘要翻译： 用于测量用于控制MR元件的磁畴（纵向偏置磁场）的偏置磁场的方法具有将外部测量磁场施加到MR元件上的步骤，所述MR元件被用于控制磁畴的磁场偏置（纵向偏置 磁场）平行于偏置磁场的方向，在外部测量磁场的应用下测量MR元件的rho-H环（MR元件的输出电阻与磁场强度回路）的步骤，以及 确定所测量的rho-H环的位移量的步骤。

公开(公告)号：US08666692B2

公开(公告)日：2014-03-04

申请号：US13044976

申请日：2011-03-10

申请人： Tomohito Mizuno ,  Koji Shimazawa ,  Hiroshi Kiyono

发明人： Tomohito Mizuno ,  Koji Shimazawa ,  Hiroshi Kiyono

IPC分类号： G06F17/18

CPC分类号： G11B5/64 ,  G11B2005/0021

摘要： In exemplary embodiments, first and second parameters are obtained for each of different temperatures of the magnetic recording layer. The absolute value of the first parameter for each magnetic grain has a minimum value when the temperature of each magnetic grain reaches a predetermined temperature that increases as the Curie temperature increases, and decreases as the Curie temperature decreases. The second parameter is related to the standard deviation of the coercivity distribution of the magnetic grains divided by the coercivity of the magnetic recording layer. The method calculates a value where the absolute measurement value of the first parameter has a minimum value and the temperature of the magnetic recording layer at which the standard deviation of the coercivity distribution of the magnetic grains divided by the coercivity of the magnetic recording layer has a maximum value.

摘要翻译： 在示例性实施例中，针对磁记录层的不同温度的每一个获得第一和第二参数。 当每个磁性颗粒的温度达到随着居里温度升高而增加的预定温度时，每个磁性颗粒的第一参数的绝对值具有最小值，并且随着居里温度降低而降低。 第二参数与磁性颗粒的矫顽力分布的标准偏差除以磁记录层的矫顽力相关。 该方法计算第一参数的绝对测量值具有最小值的值，并且磁记录层的矫顽力的矫顽力分布的标准偏差除以磁记录层的矫顽力的标准偏差为 最大值。