公开(公告)号：US4857267A

公开(公告)日：1989-08-15

申请号：US104595

申请日：1987-09-29

申请人： Yoshihiro Maki ,  Akira Matsuyama ,  Katsuji Tanizaki ,  Noboru Okabe ,  Katsuhiro Kishida ,  Takeshi Sakai ,  Toshinaga Ohgaki ,  Masahito Fujita

发明人： Yoshihiro Maki ,  Akira Matsuyama ,  Katsuji Tanizaki ,  Noboru Okabe ,  Katsuhiro Kishida ,  Takeshi Sakai ,  Toshinaga Ohgaki ,  Masahito Fujita

IPC分类号： F16C33/12 ,  C22C1/04 ,  C22C21/00 ,  C22C21/12

CPC分类号： C22C1/0416 ,  C22C21/00 ,  C22C21/12 ,  B22F2998/10 ,  Y10S384/912

摘要： The invention provides an aluminum base bearing alloy which is excellent in both lubricating capability and fatigue resistance and is useful, e.g. in automotive engines. The bearing alloy consists essentially of at least one lubricating element such as Pb and/or Sn the total amount of which is more than 0.04 and not more than 0.07 by sectional area ratio to the aluminum matrix, Si the amount of which is in the range from 0.01 to 0.17 by sectional area ratio to the aluminum matrix, 0.2-5.0 wt % of at least one reinforcing element such as Cu and/or Cr, 0-3.0 wt % of at least one refining element such as Ti and/or B and the balance of Al. The grain size of the lubricating element(s) is not larger than 8 .mu.m, and the grain size of Si is not larger than 12 .mu.m and preferably not smaller than 6 .mu.m. The bearing alloy is produced by preparing a raw material alloy powder mixture in which Si grains are grown to the desired size by heat treatment, compacting the alloy powder mixture into a billet and extruding the billet at an extrusion ratio not lower than 10.

摘要翻译： 本发明提供了一种铝基轴承合金，其具有优异的润滑性能和耐疲劳性，并且是有用的。 在汽车发动机。 轴承合金基本上由至少一种润滑元素，例如Pb和/或Sn，其总量大于0.04且不大于0.07，与铝基体的截面积比相比，Si的量在该范围内 0.01〜0.17的截面积比与铝基体，0.2-5.0重量％的至少一种增强元素例如Cu和/或Cr，0-3.0重量％的至少一种精炼元素如Ti和/或B 和Al的平衡。 润滑元件的粒径不大于8μm，Si的晶粒尺寸不大于12μm，优选不小于6μm。 通过制备通过热处理将Si晶粒生长至所需尺寸的原料合金粉末混合物来制造轴承合金，将合金粉末混合物压实成坯料并以不低于10的挤出比挤出坯料。

公开(公告)号：US4789607A

公开(公告)日：1988-12-06

申请号：US906009

申请日：1986-09-11

申请人： Masahito Fujita ,  Akira Ohgawara ,  Takeshi Sakai ,  Toshinaga Ohgaki ,  Tsuyoshi Ohsaki

发明人： Masahito Fujita ,  Akira Ohgawara ,  Takeshi Sakai ,  Toshinaga Ohgaki ,  Tsuyoshi Ohsaki

IPC分类号： C22C21/00 ,  B32B15/01 ,  F02F7/00 ,  F16C33/12 ,  B32B15/20 ,  C22C21/02

CPC分类号： B32B15/012 ,  F02F7/0085 ,  F16C33/121 ,  Y10S384/912 ,  Y10T428/12757 ,  Y10T428/12993

摘要： This invention relates to Al bearing alloy and a two-layer bearing material consisting of a bearing layer of said Al bearing alloy and a backing metal consisting of a steel sheet or the like. More particularly, the invention concerns an Al bearing alloy, which contains an aluminum alloy matrix having 2 to 35% of Sn, 0.5 to 10%, of Si, 0.1 to 10% of Pb, 0.01 to 0.3% of Sr and 0.01 to 0.3% of Sb, the balance being substantially Al. Additional constitutents may be 0.1 to 4% in total of at least one member selected from the group consisting of Cu, Mg, Zn, Cr, Mn, Fe, Ni, Co, Mo, Ti, V and Zr. The Si is precipitated as Si precipitate particles having spherical or oval shape or a shape having rounded ends in an Al matrix consisting substantially of Al and also Sn-Pb alloy particles are precipitated in the vicinity of the Si precipitate in the Al matrix so that it has improved fatigue-resistant properties, anti-seizure properties and abrasion-resistant properties under high speed, high load running conditions of the automobile.

摘要翻译： 本发明涉及Al轴承合金和由所述Al轴承合金的轴承层和由钢板等组成的背衬金属组成的双层轴承材料。 更具体地说，本发明涉及一种Al轴承合金，其含有2〜35％的Sn，0.5〜10％的Si，0.1〜10％的Pb，0.01〜0.3％的Sr和0.01〜0.3的铝合金基体 Sb的比例，余量基本上为Al。 另外的组分可以是选自Cu，Mg，Zn，Cr，Mn，Fe，Ni，Co，Mo，Ti，V和Zr中的至少一种的总计为0.1至4％。 Si作为具有球形或椭圆形的Si沉淀颗粒或具有基本上由Al组成的Al基体中具有圆形端的形状沉淀，并且在Al基体中的Si沉淀附近沉淀出Sn-Pb合金颗粒，使得其 在汽车的高速，高负载运行条件下，具有改善的耐疲劳性能，抗咬合性能和耐磨性能。

公开(公告)号：US09136362B2

公开(公告)日：2015-09-15

申请号：US13615912

申请日：2012-09-14

申请人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

发明人： Takeshi Sakai ,  Akira Yamada ,  Shigeki Takahashi ,  Youichi Ashida ,  Satoshi Shiraki

IPC分类号： H01L29/02 ,  H01L29/739 ,  H01L21/765 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861 ,  H01L29/868 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/7394 ,  H01L21/765 ,  H01L29/0696 ,  H01L29/0834 ,  H01L29/404 ,  H01L29/405 ,  H01L29/41725 ,  H01L29/8611 ,  H01L29/868

摘要： A semiconductor device with a lateral element includes a semiconductor substrate, first and second electrodes on the substrate, and a resistive field plate extending from the first electrode to the second electrode. The lateral element passes a current between the first and second electrodes. A voltage applied to the second electrode is less than a voltage applied to the first electrode. The resistive field plate has a first end portion and a second end portion opposite to the first end portion. The second end portion is located closer to the second electrode than the first end portion. An impurity concentration in the second end portion is equal to or greater than 1×1018 cm−3.

摘要翻译： 具有横向元件的半导体器件包括半导体衬底，衬底上的第一和第二电极以及从第一电极延伸到第二电极的电阻场板。 横向元件在第一和第二电极之间通过电流。 施加到第二电极的电压小于施加到第一电极的电压。 电阻场板具有与第一端部相对的第一端部和第二端部。 第二端部比第一端部更靠近第二电极。 第二端部的杂质浓度为1×1018cm-3以上。

公开(公告)号：US08384836B2

公开(公告)日：2013-02-26

申请号：US12828748

申请日：2010-07-01

申请人： Takeshi Sakai

发明人： Takeshi Sakai

IPC分类号： G02F1/1368

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L29/41733 ,  H01L29/42384

摘要： A liquid crystal display device having thin film transistors which can alleviate the required alignment accuracy of a semiconductor film while suppressing the generation of an optical leak current is provided. The liquid crystal display device includes: a transparent substrate; gate electrodes which are stacked above the transparent substrate; source electrodes and drain electrodes which are stacked above the gate electrodes; and semiconductor films each of which is stacked above the gate electrode and controls an electric current between the source electrode and the drain electrode based on an electric field generated by the gate electrode, wherein the semiconductor film is formed into a planar shape, and includes a first region which overlaps with the gate electrode in plane and a second region which does not overlap with the gate electrode in plane, and the source electrode and the drain electrode are not connected to the semiconductor film in the second region, and are connected to the semiconductor film in the first region.

摘要翻译： 提供一种具有薄膜晶体管的液晶显示装置，其能够抑制半导体薄膜的所需对准精度，同时抑制光泄漏电流的产生。 液晶显示装置包括：透明基板; 层叠在透明基板上方的栅电极; 源电极和漏电极堆叠在栅电极上方; 以及半导体膜，其各自层叠在栅极电极上方，并且基于栅电极产生的电场来控制源电极和漏电极之间的电流，其中半导体膜形成为平面形状，并且包括 第一区域与栅电极在平面内重叠，第二区域与栅电极不平行的第二区域，并且源电极和漏极电极未连接到第二区域中的半导体膜，并且与第二区域连接 半导体薄膜在第一区域。

公开(公告)号：US07699730B2

公开(公告)日：2010-04-20

申请号：US11226296

申请日：2005-09-15

申请人： Osamu Emizu ,  Takeshi Sakai ,  Masashi Furuya

发明人： Osamu Emizu ,  Takeshi Sakai ,  Masashi Furuya

IPC分类号： F16H7/08

CPC分类号： F16H7/0836 ,  F16H2007/0806 ,  F16H2007/0812 ,  F16H2007/0814 ,  F16H2007/0859

摘要： To provide an adequate biasing load to an endless transmission belt by biasing forces of a plurality of springs with different biasing forces and oil pressure biasing force to permit an easy adjustment. In a structure which includes an almost cylindrical plunger, a tensioner body into which the plunger is fitted, high pressure oil chambers are formed by the tensioner body and the plunger and supplied with oil pressure. Two tensioner springs, a rigid spring and a soft spring are supported by the tensioner body and are arranged in series for biasing the plunger. The plunger in its fully stretched state is supported by the serially arranged rigid and soft tensioner springs. In a condition when the plunger is pushed back from this fully stretched state by a prescribed amount or further, the plunger is supported by the rigid tensioner spring.

摘要翻译： 通过利用不同的偏压力和油压偏压力的多个弹簧的偏置力来向环形传动带提供足够的偏置载荷，以允许容易的调节。 在包括几乎圆筒形的柱塞的结构中，安装有柱塞的张紧器主体，由张紧器本体和柱塞形成高压油室并供给油压。 张紧器弹簧，刚性弹簧和软弹簧由张紧器主体支撑并串联布置以偏压柱塞。 处于完全拉伸状态的柱塞由串联布置的刚性和软张力弹簧支撑。 在将柱塞从该完全拉伸状态推回规定量以上的状态下，柱塞由刚性张紧器弹簧支撑。

公开(公告)号：US20100032680A1

公开(公告)日：2010-02-11

申请号：US12536066

申请日：2009-08-05

申请人： Takuo KAITOH ,  Toshio Miyazawa ,  Takeshi Sakai

发明人： Takuo KAITOH ,  Toshio Miyazawa ,  Takeshi Sakai

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： G02F1/1368 ,  H01L27/124 ,  H01L29/458 ,  H01L29/78618

摘要： Provided is a display device including: a gate electrode (GT); a semiconductor film (S) which controls a current flowing between a source electrode (ST) and a drain electrode (DT), the semiconductor film including a channel region and two impurity regions formed of regions which sandwich the channel region; two Ohmic contact layers (DS) being interposed between the source electrode and the like and the two impurity regions; and an insulating film laminated on a partial region of the semiconductor film, the partial region being around a position corresponding to a substantial center of the semiconductor film, in which: the semiconductor film is formed of one of microcrystalline-silicon and polycrystalline-silicon; the two impurity regions are formed in regions on which the insulating film is absent; the two Ohmic contact layers cover the two impurity regions therewith; and the source electrode and the like cover the Ohmic contact layers therewith.

摘要翻译： 提供一种显示装置，包括：栅电极（GT）; 控制在源电极（ST）和漏电极（DT）之间流动的电流的半导体膜（S），所述半导体膜包括沟道区域和由夹着沟道区域的区域形成的两个杂质区域; 两个欧姆接触层（DS）插在源电极等和两个杂质区之间; 以及层叠在所述半导体膜的部分区域上的绝缘膜，所述部分区域围绕与所述半导体膜的大致中心对应的位置，其中：所述半导体膜由微晶硅和多晶硅中的一个形成; 在绝缘膜不存在的区域中形成两个杂质区域; 两个欧姆接触层覆盖其两个杂质区域; 源电极等覆盖欧姆接触层。

公开(公告)号：US07604962B2

公开(公告)日：2009-10-20

申请号：US12027738

申请日：2008-02-07

申请人： Jun Tomono ,  Yoshiko Nomura ,  Hiroaki Sagawa ,  Takeshi Sakai ,  Ikunoshin Kato

发明人： Jun Tomono ,  Yoshiko Nomura ,  Hiroaki Sagawa ,  Takeshi Sakai ,  Ikunoshin Kato

IPC分类号： C12P19/44 ,  C12N9/24

CPC分类号： C12Y302/01158 ,  C12N9/2465 ,  C12P19/04 ,  C12P19/24

摘要： A polypeptide having an α-agarase activity, a gene encoding the polypeptide, a method for producing the polypeptide by genetic engineering and a method for producing an agarooligosaccharide using the polypeptide.

摘要翻译： 具有α-琼脂糖酶活性的多肽，编码该多肽的基因，通过遗传工程生产该多肽的方法以及使用该多肽制备琼脂低聚糖的方法。

公开(公告)号：US20090045404A1

公开(公告)日：2009-02-19

申请号：US12222152

申请日：2008-08-04

申请人： Takeshi Sakai

发明人： Takeshi Sakai

IPC分类号： H01L33/00

CPC分类号： H01L29/78678 ,  H01L29/41733 ,  H01L29/78609 ,  H01L29/78696

摘要： A semiconductor device can easily reduce a leak current which flows when a reversely-staggered-type TFT element in which an active layer is made of polycrystalline semiconductor is turned off. The semiconductor device includes a reversely-staggered-type TFT element in which a semiconductor layer, a source electrode and a drain electrode are arranged on a surface of an insulation film, and a portion of the source electrode and a portion of the drain electrode respectively get over the semiconductor layer. The active layer of the semiconductor layer is mainly made of polycrystalline semiconductor constituted of strip-shaped crystals elongated in the channel length direction of the TFT element, and is configured in a plan view such that the source electrode and the drain electrode are respectively pulled out from positions above the active layer in the channel width direction of the TFT element and in the directions opposite to each other, and the source electrode intersects with only one side out of two sides of the active layer which extend in the channel length direction, and the drain electrode intersects with only another side out of two sides of the active layer which extend in the channel length direction.

摘要翻译： 半导体器件可以容易地减少当其中有源层由多晶半导体制成的反向交错型TFT元件截止时流过的漏电流。 半导体器件包括反向交错型TFT元件，其中半导体层，源电极和漏电极分别布置在绝缘膜的表面上，以及源电极的一部分和漏电极的一部分 越过半导体层。 半导体层的有源层主要由在TFT元件的沟道长度方向上延伸的带状晶体构成的多晶半导体构成，并且以平面图的形式构成，使得源电极和漏电极分别被拉出 从有源层上方的TFT元件的沟道宽度方向上方的位置，并且在与沟道长度方向延伸的有源层的两侧仅一侧相交， 漏电极仅在有源层的沿通道长度方向延伸的两侧的另一侧相交。

公开(公告)号：US07417351B2

公开(公告)日：2008-08-26

申请号：US11067736

申请日：2005-03-01

申请人： Yoshimi Mori ,  Toshiaki Ueda ,  Takeshi Sakai ,  Yasuhiko Kimura ,  Shin Onose ,  Hiroshi Kanazawa ,  Masahiko Honma

发明人： Yoshimi Mori ,  Toshiaki Ueda ,  Takeshi Sakai ,  Yasuhiko Kimura ,  Shin Onose ,  Hiroshi Kanazawa ,  Masahiko Honma

IPC分类号： H02K1/00

CPC分类号： H02K3/12 ,  H02K3/50 ,  H02K2203/09

摘要： A rotary machine having a stator composed of a stator iron core having a plurality of slots formed in the direction of the rotation axis and stator windings inserted into the plurality of slots, wherein the stator windings are composed of a plurality of conductors respectively inserted into the plurality of slots in the direction of the rotation axis and the stator has a connection ring having slots into which the plurality of conductors are inserted in the direction of the rotation axis.

摘要翻译： 一种旋转机械，具有定子，所述定子由定子铁心构成，所述定子铁芯具有沿所述旋转轴线的方向形成的多个槽和插入到所述多个槽中的定子绕组，其中所述定子绕组由分别插入 在旋转轴线方向上的多个狭槽和定子具有连接环，该连接环具有槽，多个导体沿旋转轴线的方向插入该槽中。

公开(公告)号：US07136950B2

公开(公告)日：2006-11-14

申请号：US10251334

申请日：2002-09-20

申请人： Keith Mowery ,  Daniel Jensen ,  Takeshi Sakai ,  Cheng-Kun Huang

发明人： Keith Mowery ,  Daniel Jensen ,  Takeshi Sakai ,  Cheng-Kun Huang

IPC分类号： H05K7/10 ,  G06F13/14 ,  H01R25/00

CPC分类号： G06K19/07732 ,  G06K19/07739 ,  G06K19/07743

摘要： The present invention enables the use of a single passive adaptor (1500, 1800) for multiple types of flash media cards. The present invention provides this by implementing form factors with a detection scheme (1410, 1610) that notifies a host controller of the type of media card that has been inserted. The form factors and detection scheme can be designed to meet PCMCIA CardBus Plus standards.

摘要翻译： 本发明使得能够使用单个无源适配器（1500,1800）用于多种类型的闪存介质卡。 本发明通过实施具有通知主机控制器已经插入的媒体卡的类型的检测方案（1410,1610）来实现形式因素。 形状因子和检测方案可以设计为符合PCMCIA CardBus Plus标准。