摘要:
A field-effect transistor, which contains: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, which are configured to extract electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein the n-type oxide semiconductor is a triclinic crystal compound, a monoclinic crystal compound, or a trigonal crystal compound, each of which is substitutionally doped with at least one dopant selected from the group consisting of a divalent cation, a trivalent cation, a tetravalent cation, a pentavalent cation, and a hexavalent cation, and wherein a valence of the dopant is greater than a valence of a metal ion constituting the n-type oxide semiconductor, excluding the dopant.
摘要:
A lubrication apparatus for a four-stroke engine includes a piston, a cylinder, a crank chamber and a valve operating chamber. The lubrication apparatus configured to lubricate driving parts while circulating oil mist through an oil circulation pathway, using pressure fluctuation in the crank chamber, the pressure fluctuation being caused by reciprocating motion of the piston. The lubrication apparatus further includes a direct passageway configured to allow communication between the valve operating chamber and the crank chamber when a negative pressure is created in the crank chamber. The direct passageway includes a flexible tube part that is formed out of the cylinder.
摘要:
A curtain airbag device that can be applied to a small-width pillar. The curtain airbag device is accommodated in a region extending from at least an A-pillar to an upper portion of a window frame, and includes an airbag that is deployed in a curtain form near a side window of a vehicle interior in order to protect an occupant; and a gas generator that supplies inflation gas to the airbag. The accommodated airbag is formed in a rod shape by being folded in a roll form. When the airbag is accommodated, the airbag is partially compressed toward the center of the airbag at a narrow portion where an installation area of the A-pillar is narrow, in order to partially decrease a diameter of the airbag.
摘要:
A coating liquid for forming a metal oxide thin film, the coating liquid including: an inorganic indium compound; at least one of an inorganic magnesium compound and an inorganic zinc compound; and a glycol ether.
摘要:
A semiconductor device includes a diode formed by making use of a DMOS transistor structure. In addition to such a DMOS transistor structure, the semiconductor device includes a second buried layer of the first conductivity type being provided on a first buried layer of a second conductivity type that is in a floating state. Moreover, the second buried layer of the first conductivity type and a second diffusion region of the first conductive type are connected by a first diffusion region of the first conductivity type. A first electrode is set as anode, and a second electrode and a third electrode are short-circuited and set as cathode.
摘要:
Provided are a positive photosensitive resin composition that is developable in an alkaline aqueous solution and gives a good shaped pattern that is excellent in heat resistance and mechanical property, a method for producing the pattern and an electronic component. The positive photosensitive resin composition contains (a) polybenzoxazole or a polybenzoxazole precursor polymer having a structural unit represented by either a general formula (1) or (2) and satisfying conditions (i) and/or (ii), (b) a compound that generates an acid by being irradiated with active light ray and (c) a compound having a structure represented by a general formula (3) crosslinkable or polymerizable with said component (a).
摘要:
The present invention relates to an optical recording medium containing a first substrate, a first information layer, an intermediate layer, a second information layer and a second substrate in this order, wherein the first information layer contains a first recording layer disposed on the first substrate and the second information layer contains a reflective layer, a second recording layer containing an organic dye and a protective layer which are disposed on the second substrate in this order; and the second recording layer contains an organic dye which is at least one elected from the group consisting of the specified squarylium metal chelate compounds.
摘要:
In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves form the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.
摘要:
The object of the present invention is to provide an optical recording medium which includes a substrate, a first information layer and a second information layer, the first information layer and the second information layer are disposed on the substrate through an intermediate layer in a laminar structure; recording and reproducing is performed on each of the two information layers by laser beam irradiation from the first information layer side; the second information layer is provided with at least a reflective layer, a dielectric layer, and a second dye recording layer formed in this order; and the dielectric layer is formed from any one of materials selected from the group consisting of oxides, nitrides, sulfides, carbides or mixtures thereof from any one of elements which are not same as metal elements and semi-metal elements used for forming the reflective layer.