公开(公告)号：US07888239B2

公开(公告)日：2011-02-15

申请号：US12496406

申请日：2009-07-01

申请人： Masaru Nakamura ,  Masatoshi Wakahara ,  Motoko Nakayama ,  Yuki Nakamura

发明人： Masaru Nakamura ,  Masatoshi Wakahara ,  Motoko Nakayama ,  Yuki Nakamura

IPC分类号： H01L21/78 ,  H01L21/46

CPC分类号： H01L21/78 ,  B23K26/009 ,  B23K26/042 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50

摘要： In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves from the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.

摘要翻译： 在半导体器件制造方法中，将形成有在前表面上以格子状形成的多个街道的多个区域中的元件形成的晶片沿着街道划分为各个器件，当晶片被分割时 通过在研磨处理之前通过切割将沿着街道形成的切割槽暴露在单个装置中，将刚性板施加到晶片的前表面，并且将粘合剂膜附着到晶片的后表面。 此后，进行分离槽形成步骤，其中激光束沿着切割带从切割带一侧引导到粘合剂膜，所述切割带侧涂覆有安装有粘合剂膜的晶片，以沿着切割槽在粘合膜中形成分离槽 。

公开(公告)号：US20100015784A1

公开(公告)日：2010-01-21

申请号：US12496406

申请日：2009-07-01

申请人： Masaru Nakamura ,  Masatoshi Wakahara ,  Motoko Nakayama ,  Yuki Nakamura

发明人： Masaru Nakamura ,  Masatoshi Wakahara ,  Motoko Nakayama ,  Yuki Nakamura

IPC分类号： H01L21/78

CPC分类号： H01L21/78 ,  B23K26/009 ,  B23K26/042 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/42 ,  B23K2103/50

摘要： In a semiconductor device manufacturing method in which a wafer formed with devices in a plurality of areas sectioned by a plurality of streets formed in a lattice-like pattern on the front surface is divided into the individual devices along the streets, when the wafer is divided into the individual devices by exposing cut grooves formed along the streets by a dicing before grinding process, a rigid plate is applied to the front surface of the wafer and an adhesive film is attached to the rear surface of the wafer. Thereafter, a separation groove forming step is performed in which a laser beam is directed to the adhesive film along the cut grooves form the dicing tape side applied with the wafer attached with the adhesive film to form separation grooves in the adhesive film along the cut grooves.

摘要翻译： 在半导体器件制造方法中，将形成有在前表面上以格子状形成的多个街道的多个区域中的元件形成的晶片沿着街道划分为各个器件，当晶片被分割时 通过在研磨处理之前通过切割将沿着街道形成的切割槽暴露在单个装置中，将刚性板施加到晶片的前表面，并且将粘合剂膜附着到晶片的后表面。 此后，进行分离槽形成步骤，其中激光束沿着切割槽被引导到粘合膜，形成施加有粘合剂膜的晶片的切割带侧，以沿着切割槽在粘合膜中形成分离槽 。

公开(公告)号：US11315961B2

公开(公告)日：2022-04-26

申请号：US16486224

申请日：2018-03-15

申请人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

发明人： Sadanori Arae ,  Yuichi Ando ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Naoyuki Ueda ,  Ryoichi Saotome ,  Minehide Kusayanagi

IPC分类号： H01L27/12 ,  H01L29/417

摘要： (Object) To miniaturize a field-effect transistor. (Means of Achieving the Object) A field-effect transistor includes a semiconductor film formed on a base, a gate insulating film formed on a part of the semiconductor film, a gate electrode formed on the gate insulating film, and a source electrode and a drain electrode formed in contact with the semiconductor film, wherein a thickness of the source electrode and the drain electrode is smaller than a thickness of the gate insulating film, and the gate insulating film includes a region that is not in contact with the source electrode or the drain electrode.

公开(公告)号：US10204799B2

公开(公告)日：2019-02-12

申请号：US15376895

申请日：2016-12-13

申请人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

发明人： Minehide Kusayanagi ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome ,  Sadanori Arae

IPC分类号： H01L21/44 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66 ,  H01L21/477 ,  H01L29/786

摘要： A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

公开(公告)号：US10020374B2

公开(公告)日：2018-07-10

申请号：US13515463

申请日：2010-12-22

申请人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

发明人： Yuji Sone ,  Naoyuki Ueda ,  Yuki Nakamura ,  Yukiko Abe

IPC分类号： H01L29/04 ,  H01L29/49 ,  H01L29/786 ,  H01L29/788 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/36 ,  H01L27/108 ,  H01L27/32 ,  G02F1/1368 ,  G02F1/163

CPC分类号： H01L29/4908 ,  G02F1/1368 ,  G02F2001/1635 ,  G09G3/20 ,  G09G3/3233 ,  G09G3/3648 ,  H01L27/10873 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/3248 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/7869 ,  H01L29/7881

摘要： A field-effect transistor includes a substrate; a source electrode, a drain electrode, and a gate electrode that are formed on the substrate; a semiconductor layer by which a channel is formed between the source electrode and the drain electrode when a predetermined voltage is applied to the gate electrode; and a gate insulating layer provided between the gate electrode and the semiconductor layer. The gate insulating layer is formed of an amorphous composite metal oxide insulating film including one or two or more alkaline-earth metal elements and one or two or more elements selected from a group consisting of Ga, Sc, Y, and lanthanoid except Ce.

公开(公告)号：US08915219B2

公开(公告)日：2014-12-23

申请号：US13150732

申请日：2011-06-01

申请人： Yuki Nakamura ,  Yasuyuki Sakakibara

发明人： Yuki Nakamura ,  Yasuyuki Sakakibara

IPC分类号： F01P7/02 ,  F01P5/06 ,  F02B63/02 ,  F02B75/16 ,  F01P5/02

CPC分类号： F01P5/06 ,  F01P2005/025 ,  F02B63/02 ,  F02B75/16

摘要： A working machine engine is provided. The air flowing through the front side cooling air flow passage and the upper side cooling air flow passage which are provided in the front side and the upper side of the casing, respectively, and the air flowing through the auxiliary air flow passage provided in the back side of the casing join together near the opening. By this means, the air flowing through the auxiliary air flow passage can change the direction of the air flowing lengthwise through the front side cooling air flow passage and the upper side cooling air flow passage.

摘要翻译： 提供工作机器引擎。 分别设置在壳体的前侧和上侧的流过前侧冷却风流路和上侧冷却风流路的空气以及设置在后侧的辅助空气流路中流动的空气 外壳的一侧在开口附近连接在一起。 通过这种方式，流过辅助空气流动通道的空气可以改变通过前侧冷却空气流动通道和上侧冷却空气流动通道纵向流动的空气的方向。

公开(公告)号：US20140353648A1

公开(公告)日：2014-12-04

申请号：US14360791

申请日：2012-11-28

申请人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

发明人： Yukiko Abe ,  Naoyuki Ueda ,  Yuki Nakamura ,  Mikiko Takada ,  Shinji Matsumoto ,  Yuji Sone ,  Ryoichi Saotome

IPC分类号： H01L29/24 ,  H01L27/32 ,  H01L21/02 ,  H01L27/12 ,  G02F1/1368 ,  H01L29/786 ,  H01L29/861

CPC分类号： H01L29/247 ,  C01G19/00 ,  C01G30/00 ,  C01P2002/72 ,  G02F1/1368 ,  H01L21/02422 ,  H01L21/02483 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02623 ,  H01L21/02628 ,  H01L21/02631 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3244 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/861

摘要： To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

摘要翻译： 提供包括氧化物的p型氧化物，其中氧化物包括：Cu; 和选自p族元素的并且可以处于平衡状态的元素M作为离子存在，其中平衡状态是其中存在p的全部电子的状态 - 最外壳的眶骨丢失，并且损失最外壳的全部电子的状态，并且其中p型氧化物是无定形的。

公开(公告)号：US08860146B2

公开(公告)日：2014-10-14

申请号：US13052014

申请日：2011-03-18

申请人： Yuki Nakamura ,  Takehito Ikimura

发明人： Yuki Nakamura ,  Takehito Ikimura

IPC分类号： H01L27/04 ,  H01L27/06

CPC分类号： H01L27/0629

摘要： According to one embodiment, a semiconductor device including a field-effect transistor, and a resistance element connected between a gate electrode of the field effect transistor and a connection point connected between a back gate electrode of the field effect transistor and one of source-drain regions of the field effect transistor, a voltage being applied between the other of the source-drain regions and the gate electrode.

摘要翻译： 根据一个实施例，包括场效应晶体管的半导体器件和连接在场效应晶体管的栅极之间的电阻元件和连接在场效应晶体管的背栅极之间的连接点和源极 - 漏极 场效应晶体管的区域，电压施加在源极 - 漏极区域中的另一个和栅电极之间。

公开(公告)号：US08454249B2

公开(公告)日：2013-06-04

申请号：US13404357

申请日：2012-02-24

申请人： Kohei Nishimura ,  Yuki Nakamura ,  Yusuke Togo

发明人： Kohei Nishimura ,  Yuki Nakamura ,  Yusuke Togo

IPC分类号： G03B9/08

CPC分类号： G03B9/36 ,  G03B9/20

摘要： A second blade-driving mechanism includes second blade-driving first member and second blade-driving second member, only the second blade-driving second member is rotated against elastic force of a blade-driving spring while the second blade-driving first member engages and is locked by a locking member at start of cocking operation of the cocking member to keep a second blade covering an exposure aperture, and the second blade-driving first member is disengaged from locking member at final stage of cocking operation, so the second blade-driving first member can be rotated by elastic force of a second blade-cocking spring and the second blade is made to open the exposure aperture. Staring cocking operation of a focal plane shutter is possible irrespective of the length of time during which imaging information can be transferred from an image sensor to storage via an information-processing circuit.

摘要翻译： 第二叶片驱动机构包括第二叶片驱动第一构件和第二叶片驱动第二构件，只有第二叶片驱动第二构件抵抗叶片驱动弹簧的弹力而旋转，同时第二叶片驱动第一构件接合， 在起动构件的起动操作开始时被锁定构件锁定以保持第二刀片覆盖曝光孔，并且第二刀片驱动第一构件在起动操作的最后阶段与锁定构件脱离接合， 驱动第一构件可以通过第二叶片弹簧的弹力旋转，并且使第二叶片打开曝光孔。 与成像信息可以经由信息处理电路从图像传感器传送到存储的时间长度无关，可以进行焦平面快门的起弧操作。

公开(公告)号：US08067080B2

公开(公告)日：2011-11-29

申请号：US12282821

申请日：2007-03-14

申请人： Yuki Nakamura ,  Masahiro Hayashi ,  Satoshi Mizukami ,  Tohru Yashiro

发明人： Yuki Nakamura ,  Masahiro Hayashi ,  Satoshi Mizukami ,  Tohru Yashiro

IPC分类号： G11B7/24

CPC分类号： G11B7/2492 ,  G11B7/24038 ,  G11B7/245 ,  G11B7/246 ,  G11B7/2467 ,  G11B7/2472 ,  G11B7/248 ,  G11B7/2531 ,  G11B7/2533 ,  G11B7/2534 ,  G11B7/2536 ,  G11B7/2578 ,  G11B7/259 ,  G11B2007/24612 ,  G11B2007/25706 ,  G11B2007/25708 ,  G11B2007/2571 ,  G11B2007/25715 ,  G11B2007/25716

摘要： Provided is an optical recording medium including, in sequence: a first substrate; a first information recording layer; an intermediate layer; a second information recording layer; and a second substrate having wobble convex portions on its surface, wherein information is recorded on or reproduced from the first information recording layer and second information recording layer by irradiation with a laser beam from a first information recording layer side, wherein the second information recording layer includes, over the second substrate, a light reflective layer, a dye recording layer, and an inorganic protective layer, wherein the inorganic protective layer has a thickness of 3 nm to 40 nm, and wherein the dye recording layer includes a cyanine compound expressed by General Formula (I) and a squarylium compound expressed by General Formula (II):

摘要翻译： 提供了一种光学记录介质，其依次包括：第一基板; 第一信息记录层; 中间层 第二信息记录层; 以及在其表面上具有摆动凸部的第二基板，其中通过用来自第一信息记录层侧的激光束的照射将信息记录在第一信息记录层和第二信息记录层上或从第一信息记录层再现，其中第二信息记录层 在第二基板上包括光反射层，染料记录层和无机保护层，其中无机保护层的厚度为3nm至40nm，并且其中染料记录层包括由 通式（I）和通式（II）表示的方酸化合物：