摘要:
Provided are an arbiter capable of improving memory access efficiency in a multi-bank memory, a memory access arbitration system including the arbiter, and an arbitration method thereof, where the arbiter detects requests that are not included in a busy bank, and allows the requests corresponding to a bank receiving the largest number of pending requests priorities; and write request information generated by masters is stored in a predetermined buffer to be output as additional master request information, and provides the corresponding master with an opportunity to generate new request information.
摘要:
In an UDDI web service registry system based on an ebXML registry, a first client system supports a web service based on an UDDI protocol and transceives an UDDI message. An UDDI registry processes a service request of the UDDI message. A second client system supports a web service based on an ebXML protocol and transceives an ebXML message. An ebXML registry processes service requests of the compatible ebXML message. An UDDI service module transforms the UDDI message into a compatible ebXML message and transmits the ebXML message to the ebXML registry.
摘要:
A data processing method for a hybrid ARQ type II/III downlink of a wide-band radio communication system, wherein SRNC and CRNC are located on the same radio network, includes the steps of: a) generating RLC-PDU in a RLC layer of the SRNC and generating a PDU having RLC-PDU information needed for supporting the hybrid ARQ type II/III based on a header of the RLC-PDU (HARQ-RLC-Control-PDU); b) transmitting the RLC-PDU and the HARQ-RLC-Control-PDU to a MAC-D, treating a general user part of a MAC layer through a logical channel; c) transmitting the RLC-PDU and the HARQ-RLC-Control-PDU from the MAC-D to a MAC-C/SH, treating common/shared channel part of the MAC layer; d) transforming the PLC-PDU and the HARQ-RLC-Control-PDU to MAC-PDU and the HARQ-MAC-Control-PDU, respectively, in the MAC-C/SH, and allocating a format TFI1 of the MAC-PDU and TFI2 of the HARQ-MAC-Control-PDU, and transmitting the TFI1 and TFI2 to the MAC-D, and transmitting the MAC-PDU and the HARQ-MAC-Control-PDU to a physical layer of BTS, through a transport channel; and e) forming the TFI1 and the TFI2 in the MAC-D to a TFCI, then transmitting the TFCI to the user equipment through a first physical channel, and transforming the MAC-PDU and the HARQ-MAC-Control-PDU to a radio frame, then transmitting the radio frame to the mobile station through a second physical channel.
摘要:
A handover method between mobile switching centers using an intelligent network and an IMT-2000 network system adapting the same are disclosed. The system includes a plurality of RNC each formed of a RACF (Radio Access Control Function) for managing a radio resource and call, an ARF (Access Link Relay Function) for performing an anchor handover between the RNC, and a SACF(Service Access Control Function) for managing and controlling the service, and a plurality of MSC including a SSF(Service Switching Function) for analyzing a service transferred from each of IN and transferring a proper work request to the CCF(Call Control Function) and a CCF for transferring a service request message to the SSF and processing a service request transferred from the SSF for thereby decreasing the consumption of a transfer resource by performing a handover between the MSC using an IN of an IMT-2000 network system.
摘要:
A traffic control method for providing a guaranteed/predictive service which can guarantee a quality of service QOS by controlling transmission routes of various traffic data with a policing function using a moving ceiling MC function and a packet scheduling function using a first in first out FIFO or weighted fair queueing WFQ method, includes the steps of: observing an average transmission rate of packet data inputted through each route by using the MC method; determining whether the packet data satisfies passing conditions of the MC method by a result of the observation; storing the packet data in an output buffer when the packet data satisfies the passing conditions thereof; storing the packet data in an empty space of a certain storing unit, and abandoning the packet data when there is no empty space, in the case that the packet data does not satisfy the passing conditions of the MC method; and transmitting the packet data to a receiving side through a single transmission route after detecting the output buffer of each route by a scheduler of the FIFO/WFO method and multiplexing the packet data in an input order, whereby the predictive/guaranteed service is effectively supported, and the processing time of the packet data is reduced by using the MC method.
摘要:
A cab torsion preventing structure of truck wherein a reinforcing material is installed to form a closed space at a connected area between a wheel housing and a head lamp support panel to increase strength relative to load and torsional moment applied to the wheel housing, and to dispense with thicker wheel housing and head lamp support panel, preventing cracks at the connected area, the structure comprising the reinforcing material, one side of which being combined to an inner surface of the wheel housing and the other side being coupled to the head lamp support panel, thereby forming a closed space at a connected area between the head lamp support panel and the wheel housing for dispersion of load.
摘要:
Methods of forming power semiconductor devices having insulated gate bipolar transistor cells and freewheeling diodes cells therein includes the steps of forming an array of emitter regions of second conductivity type (e.g., P-type) in a cathode layer of first conductivity type (e.g., N-type) and then forming a base region of first conductivity type on the cathode layer. An insulated gate electrode(s) pattern is then formed on a surface of the base region and used as an implant mask for forming interleaved arrays of collector and anode regions of second conductivity type in the base region. An array of source regions of first conductivity type is then formed in the collector regions, but not the anode regions, by implanting/diffusing source region dopants into the collector regions. To achieve preferred device characteristics, the array of collector regions is formed to be diametrically opposite the array of emitter regions to thereby define a plurality of vertical IGBT cells. The array of anode regions is also spaced between adjacent collector regions to define a plurality of freewheeling diode cells which are connected in antiparallel relative to the IGBT cells. The insulated gate electrode is also preferably patterned to extend between adjacent collector and anode regions so that in the event parasitic thyristor latch-up of the IGBT cells occurs, the collector regions can be electrically connected to the anode regions. This electrical connection reduces the effective resistance of the collector regions and reduces the likelihood that the P-N junction formed at the collector-source junction will become or remain forward biased.
摘要:
An IGBT (Insulated Gate Bipolar Transistor) is composed of a P.sup.+ silicon substrate, a first epitaxial layer in which the first conductive type high density impurities are composed at a gentle slope, a semiconductor substrate which is located at the above first epitaxial layer and composed of a second epitaxial layer formed of the first conductive type low density impurities, a P.sup.- well which is composed at the surface part of the second epitaxial layer, an active area which is formed and included in the P.sup.- well, and a gate electrode which is folded with part of the edge of the P.sup.- well, included by an insulated oxidation film and formed on the semiconductor substrate. The first epitaxial layer corresponding to the lower part of the above P.sup.- well is composed of the first conductive type low density impurities, and the first epitaxial layer corresponding to the lower part of a gate electrode, in which an insulated oxidation film is included, is composed of the first conductive type high density impurities layer, and has a structure in which an N.sup.+ and an N.sup.- layers are formed horizontally by turns. Latch-up phenomenon during normal operation is restrained, by improving the epitaxial layer of the semiconductor substrate, and reliability of the semiconductor device is enhanced by increasing the safe operating area and short circuit stability.