摘要:
A semiconductor device is formed by first providing a dual gate semiconductor device structure having FET pair precursors, which includes an nFET precursor and a pFET precursor, wherein each of the nFET precursor and the pFET precursor includes a dummy gate structure. At least one protective layer is deposited across the FET pair precursors, leaving the dummy gate structures exposed. The dummy gate structure is removed from one of the nFET precursor and the pFET precursor to create therein one of an nFET gate hole and a pFET gate hole, respectively. A fill is deposited into the formed one of the nFET gate hole and the pFET gate.
摘要:
Compounds and salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof and uses thereof are described, wherein the compounds have formula I: In certain aspects and embodiments, the described compounds or salts thereof, formulations thereof, conjugates thereof, derivatives thereof, forms thereof are active on one or more of Fms, Kit, Flt3, TrkA, TrkB and TrkC kinase protein. Also described are methods of use thereof to treat diseases and conditions, including diseases and conditions associated with activity of one or more of Fms, Kit, Flt3, TrkA, TrkB and TrkC, including rheumatoid arthiritis, osteoarthritis, osteoporosis, peri-prosthetic osteolysis, systemic sclerosis, demyelinating disorders, multiple sclerosis, Charcot Marie Tooth syndrome, amyotrophic lateral sclerosis, Alzheimer's disease, Parkinson's disease, global ischemia, ulcerative colitis, Crohn's disease, immune thrombocytopenic purpura, atherosclerosis, systemic lupus erythematosis, myelopreparation for autologous transplantation, transplant rejection, glomerulonephritis, interstitial nephritis, Lupus nephritis, tubular necrosis, diabetic nephropathy, renal hypertrophy, type I diabetes, acute pain, inflammatory pain, neuropathic pain, acute myeloid leukemia, melanoma, multiple myeloma, breast cancer, prostate cancer, pancreatic cancer, lung cancer, ovarian cancer, gliomas, glioblastoma, neurofibromatosis, osteolytic bone metastases, brain metasteses, gastrointestinal stromal tumors, and giant cell tumors.
摘要:
A decorative sheet includes a decorative base layer; an adhesive layer disposed on a surface of the decorative base layer; and transparent layer disposed on an opposing surface of the base layer from the adhesive layer. The base layer may include up to 50 weight percent inorganic non-combustible filler. The sheet has a reduced heat of combustion or reduced flammability relative to currently available decorative sheets.
摘要:
The present invention discloses a method, system and device for transmitting an E-DCH Random Access Uplink Control Channel (E-RUCCH), where the method includes: a UE judging whether a plurality of E-RUCCH transmission processes temporally overlap; and if there is overlapping, then the UE selecting and performing one of the E-RUCCH transmission processes and returning scheduling information and the identifier of the UE to a base station over an E-RUCCH. The method addresses the problem of coordination between E-RUCCH transmission processes triggered due to various reasons in a TD-SCDMA system with the enhanced feature of CELL_FACH introduced thereto.
摘要:
A method implemented by a network topology design system, the network topology design system including a processing device. The method to determine placement of a controller within a network with a split architecture where control plane components of the split architecture network are executed by a controller and the control plane components are separate from data plane components of the split architecture network. The placement of the controller is selected to minimize disruption of the split architecture network caused by a link failure, a switch failure or a connectivity loss between the controller and the data plane components.
摘要:
Methods for replicating a nanopillared surface include applying a nanopillar-forming material to a surface of a replica substrate to form a precursor layer on the replica-substrate surface. A template surface of a nanomask may be contacted to the precursor layer. The nanomask may include a self-assembled polymer layer on a nanomask-substrate surface, the template surface being defined in the self-assembled polymer layer. The self-assembled polymer layer may have nano-sized pores with openings at the template surface. The precursor layer may be cured while the template surface remains in contact with the precursor layer. The nanomask is removed to expose a nanopillared surface having a plurality of nanopillars on the replica-substrate surface. The nanopillars on the replica-substrate surface may correspond to the pores in the template surface. Nanopillared surfaces may be replicated on one side of the replica substrate or on two opposing sides of the replica substrate.
摘要:
A method for implementing a general packet radio service (GPRS) tunnel protocol (GTP) in a packet core (PC) of a third generation (3G) network having a split architecture where a control plane of the PC of the 3G network is in a cloud computing system, the cloud computing system including a controller, the controller to execute a plurality of control plane modules, the control plane to communicate with the data plane of the PC through a control plane protocol, the data plane implemented in a plurality of network elements of the 3G network by configuring switches implementing a data plane of the SGSN and GGSN and intermediate switches to establish a first and second GTP tunnel endpoint.
摘要:
A lenticular system for autostereoscopic display devices in which a transparent polymeric lenticular array is embedded between two glass sheets and the gap between the polymeric lenticular array and the outer cover is filled with a transparent polymeric filling having a refractive index different than the refractive index of the polymeric lenticular array to reduce glare.
摘要:
A semiconductor device including a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.
摘要:
A semiconductor device includes a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.