公开(公告)号：US20110278615A1

公开(公告)日：2011-11-17

申请号：US13069346

申请日：2011-03-22

申请人： Dae-Hyun No ,  Jong-Hyun Choi ,  Gun-Shik Kim ,  June-Woo Lee

发明人： Dae-Hyun No ,  Jong-Hyun Choi ,  Gun-Shik Kim ,  June-Woo Lee

IPC分类号： H01L51/52 ,  H01L51/56

CPC分类号： H01L27/3248 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3246 ,  H01L29/4908 ,  H01L51/5215 ,  H01L51/5265 ,  H01L51/56 ,  H01L2227/323

摘要： An organic light-emitting display device and a method of its manufacture are provided, whereby manufacturing processes are simplified and display quality may be enhanced. The display device includes: an active layer of a thin film transistor (TFT), on a substrate and including a semiconducting material; a lower electrode of a capacitor, on the substrate, doped with ion impurities, and including a semiconducting material; a first insulating layer on the substrate to cover the active layer and the lower electrode; a gate electrode of the TFT, on the first insulating layer; a pixel electrode on the first insulating layer; an upper electrode of the capacitor, on the first insulating layer; source and drain electrodes of the TFT, electrically connected to the active layer; an organic layer on the pixel electrode and including an organic emission layer; and a counter electrode facing the pixel electrode, the organic layer between the counter electrode and the pixel electrode.

摘要翻译： 提供了一种有机发光显示装置及其制造方法，由此可以简化制造工艺并提高显示质量。 显示装置包括：在衬底上并包括半导体材料的薄膜晶体管（TFT）的有源层; 电容器的下电极，在衬底上，掺杂有离子杂质，并且包括半导体材料; 在所述基板上的第一绝缘层，以覆盖所述有源层和所述下电极; TFT的栅电极，位于第一绝缘层上; 第一绝缘层上的像素电极; 电容器的上电极，位于第一绝缘层上; 电连接到有源层的TFT的源极和漏极; 像素电极上的有机层，并且包括有机发光层; 面对像素电极的对置电极，对置电极和像素电极之间的有机层。

公开(公告)号：US07923735B2

公开(公告)日：2011-04-12

申请号：US12461193

申请日：2009-08-04

申请人： Ki-Nyeng Kang ,  Chul-Kyu Kang ,  Jong-Hyun Choi

发明人： Ki-Nyeng Kang ,  Chul-Kyu Kang ,  Jong-Hyun Choi

IPC分类号： H01L21/84 ,  H01L29/12

CPC分类号： H01L29/7869

摘要： A TFT includes a substrate, a source electrode and a drain electrode on the substrate, the source and drain electrodes separated from each other, an active layer on the substrate between the source electrode and the drain electrode, a cladding unit on side surfaces of the source electrode and the drain electrode, a gate insulating layer on the substrate, the gate insulating layer overlapping the active layer and the cladding unit, and a gate electrode on the gate insulating layer, the gate electrode overlapping the active layer.

摘要翻译： TFT包括在基板上的基板，源电极和漏电极，源电极和漏电极彼此分离，源电极和漏电极之间的基板上的有源层，在源电极和漏电极的侧表面上的包层单元 源电极和漏电极，衬底上的栅极绝缘层，与有源层和包层单元重叠的栅极绝缘层，以及栅极绝缘层上的栅电极，栅电极与有源层重叠。

公开(公告)号：US07710807B2

公开(公告)日：2010-05-04

申请号：US12021762

申请日：2008-01-29

申请人： Hyun-Seok Lee ,  Jong-Hyun Choi ,  Ki-Chul Chun ,  Jong-Eon Lee

发明人： Hyun-Seok Lee ,  Jong-Hyun Choi ,  Ki-Chul Chun ,  Jong-Eon Lee

IPC分类号： G11C7/02

CPC分类号： G11C7/065 ,  G11C11/406 ,  G11C11/4091 ,  G11C2211/4065

摘要： A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type is configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.

摘要翻译： 感测放大器包括一对感测位线和第一和第二MOS读出放大器。 第一MOS读出放大器在其中具有第一导电类型的第一对MOS晶体管，其电耦合在该对感测位线之间。 该电耦合被提供为使得第一对MOS晶体管中的每一个具有电连接到该对感测位线中的相应一个和第一对MOS晶体管的第二源极/漏极端子的第一源极/漏极端子 电连接在一起。 第一导电类型的第一对MOS晶体管被配置为具有不同的阈值电压或支持不同的阈值电压偏置。 第二MOS读出放大器具有第一对第二导电类型的MOS晶体管，它们在一对感测位线之间电耦合。

公开(公告)号：US07659185B2

公开(公告)日：2010-02-09

申请号：US10570285

申请日：2004-09-02

申请人： Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

发明人： Jin Jang ,  Jong-Hyun Choi ,  Seung-Soo Kim ,  Jae-Hwan Oh ,  Jun-Hyuk Chon

IPC分类号： H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02425 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/78603

摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) is formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.

摘要翻译： 公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。 准备金属基板（110），使金属基板（110）的表面变平。 在金属基板（110）上形成绝缘膜（120）。 在绝缘膜（120）上形成非晶硅层（130）。 金属层（140）形成在非晶硅层（130）上。 将金属基板（110）上的样品加热并结晶。

公开(公告)号：US20100013745A1

公开(公告)日：2010-01-21

申请号：US12409375

申请日：2009-03-23

申请人： Young-Dae Kim ,  Jong-Hyun Choi ,  Choong-Youl Im ,  Il-Jeong Lee

发明人： Young-Dae Kim ,  Jong-Hyun Choi ,  Choong-Youl Im ,  Il-Jeong Lee

IPC分类号： G09G3/30

CPC分类号： G06F3/0412 ,  G06F3/044 ,  G06F2203/04111 ,  H01L27/323 ,  H01L27/3244 ,  H01L2251/308 ,  H01L2251/5338 ,  H01L2251/5392

摘要： An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.

摘要翻译： 一种具有静电电容型触摸面板功能的有机发光显示装置，具有减小的厚度和改善的亮度。 有机发光显示装置的显示面板包括基板，在基板上具有多个像素的显示单元和显示单元上的触摸感测单元。 触摸感测单元包括封装基板和位于封装基板的面向显示单元的一侧的电容图案层。 电容图案层具有对应于多个像素的位置的多个开口。

公开(公告)号：US20080246037A1

公开(公告)日：2008-10-09

申请号：US11898506

申请日：2007-09-12

申请人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

发明人： Chul-Kyu Kang ,  Jong-Hyun Choi ,  Woo-Sik Jun ,  Hee-Chul Jeon

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L27/1288 ,  H01L27/124

摘要： Provided is a flat display device, and more particularly, an active matrix (AM) flat display device having a thin film transistor (TFT). The flat display device includes a substrate, a plurality of TFTs (thin film transistors) provided on the substrate, each TFT comprising an active layer, a source electrode and a drain electrode that contact the active layer, and an ohmic contact layer interposed between the active layer and the source and drain electrodes, and a light emitting device electrically connected to the TFT, wherein the ohmic contact layer and a layer including the source and drain electrodes are formed to have the same pattern.

摘要翻译： 提供了一种平面显示装置，更具体地，涉及具有薄膜晶体管（TFT）的有源矩阵（AM）平面显示装置。 平面显示装置包括基板，设置在基板上的多个TFT（薄膜晶体管），每个TFT包括与有源层接触的有源层，源电极和漏电极以及介于其间的欧姆接触层 有源层和源极和漏极以及电连接到TFT的发光器件，其中欧姆接触层和包括源极和漏极的层被形成为具有相同的图案。

公开(公告)号：US20080164477A1

公开(公告)日：2008-07-10

申请号：US11971191

申请日：2008-01-08

申请人： Jong-Hyun Choi

发明人： Jong-Hyun Choi

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L29/78675 ,  H01L27/1214 ,  H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： A thin film transistor, a method of fabricating the same, and a flat panel display device including the same, are provided. According to the method, low resistance regions and high resistance regions can be manufactured through one doping process. The thin film transistor includes: a substrate; a semiconductor layer disposed on the substrate and including source and drain regions, high resistance regions smaller than the source and drain regions, a channel region, and connection regions disposed between the high resistance regions and the channel region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer above the channel region; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions, respectively.

摘要翻译： 提供薄膜晶体管，其制造方法和包括该薄膜晶体管的平板显示装置。 根据该方法，可以通过一个掺杂工艺制造低电阻区域和高电阻区域。 薄膜晶体管包括：基板; 设置在所述基板上并且包括源极和漏极区域的半导体层，小于所述源极和漏极区域的高电阻区域，沟道区域和设置在所述高电阻区域和所述沟道区域之间的连接区域; 设置在所述半导体层上的栅极绝缘层; 设置在所述沟道区域上方的所述栅极绝缘层上的栅电极; 设置在所述栅电极上的层间绝缘层; 以及设置在层间绝缘层上并分别与源极和漏极区电连接的源极和漏极。

公开(公告)号：US07349278B2

公开(公告)日：2008-03-25

申请号：US11485565

申请日：2006-07-12

申请人： Young-Sun Min ,  Jong-Hyun Choi ,  Nam-Jong Kim

发明人： Young-Sun Min ,  Jong-Hyun Choi ,  Nam-Jong Kim

IPC分类号： G11C29/00

CPC分类号： G11C11/406 ,  G11C11/40622

摘要： A method of a partial array self-refresh (PASR) operation for a dynamic random-access memory (DRAM) device includes initiating a PASR mode; writing data into a first single cell of a twin cell and inverted data of the data into a second single cell of the twin cell, during a first refresh period of the PASR mode; and concurrently refreshing the first and second single cells that are included in the twin cell, during subsequent refresh periods of the PASR mode following the first refresh period. Embodiments according to the invention can extend the period of refresh operations by applying a PASR technique for a twin cell to a single cell and thereby reduce the power consumption of the refresh operations.

摘要翻译： 用于动态随机存取存储器（DRAM）设备的部分阵列自刷新（PASR）操作的方法包括启动PASR模式; 在PASR模式的第一刷新周期期间将数据写入双胞胎单元的第一单个单元并将数据反转为双胞胎单元的第二单元; 并且在第一刷新周期之后的PASR模式的后续刷新周期期间同时刷新包含在双胞胎单元中的第一和第二单个单元。 根据本发明的实施例可以通过将双胞胎的PASR技术应用于单个小区来延长刷新操作的周期，从而降低刷新操作的功耗。

公开(公告)号：US07345939B2

公开(公告)日：2008-03-18

申请号：US11185351

申请日：2005-07-20

申请人： Hyun-Seok Lee ,  Jong-Hyun Choi ,  Ki-Chul Chun ,  Jong-Eon Lee

发明人： Hyun-Seok Lee ,  Jong-Hyun Choi ,  Ki-Chul Chun ,  Jong-Eon Lee

IPC分类号： G11C7/02

CPC分类号： G11C7/065 ,  G11C11/406 ,  G11C11/4091 ,  G11C2211/4065

摘要： A sense amplifier includes a pair of sense bit lines and first and second MOS sense amplifiers. The first MOS sense amplifier has a first pair of MOS transistors of first conductivity type therein, which are electrically coupled across the pair of sense bit lines. This electrically coupling is provided so that each of the first pair of MOS transistors has a first source/drain terminal electrically connected to a corresponding one of the pair of sense bit lines and the second source/drain terminals of the first pair of MOS transistors are electrically connected together. The first pair of MOS transistors of first conductivity type are configured to have different threshold voltages or support different threshold voltage biasing. The second MOS sense amplifier has a first pair of MOS transistors of second conductivity type therein, which are electrically coupled across the pair of sense bit lines.

摘要翻译： 感测放大器包括一对感测位线和第一和第二MOS读出放大器。 第一MOS读出放大器在其中具有第一导电类型的第一对MOS晶体管，其电耦合在该对感测位线之间。 该电耦合被提供为使得第一对MOS晶体管中的每一个具有电连接到该对感测位线中的相应一个和第一对MOS晶体管的第二源极/漏极端子的第一源极/漏极端子 电连接在一起。 第一导电类型的第一对MOS晶体管被配置为具有不同的阈值电压或支持不同的阈值电压偏置。 第二MOS读出放大器具有第一对第二导电类型的MOS晶体管，它们在一对感测位线之间电耦合。

公开(公告)号：US20070238227A1

公开(公告)日：2007-10-11

申请号：US11783097

申请日：2007-04-05

申请人： Woo-Sik Jun ,  Kyung-Jin Yoo ,  Choong-Youl Im ,  Jong-Hyun Choi ,  Do-Hyun Kwon

发明人： Woo-Sik Jun ,  Kyung-Jin Yoo ,  Choong-Youl Im ,  Jong-Hyun Choi ,  Do-Hyun Kwon

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L27/1255

摘要： Provided are a thin film transistor (TFT) panel, a method of fabricating the same, and an organic light emitting display device (OLED) including the same. The TFT panel has a TFT region and a capacitor region. A TFT is formed in the TFT region and a capacitor is formed in the capacitor region. The TFT includes an active layer that includes a source and a drain regions. A gate insulation layer is formed on the active layer, and a gate electrode is formed on the gate insulation layer over the active layer. A source and a drain electrodes are formed over the active layer, and connected to the source and drain regions, respectively. In the TFT region, an interlayer insulation layer is formed between the gate electrode and the source/drain electrodes. In the capacitor region, an interlayer insulation layer is formed between a capacitor lower electrode and a capacitor upper electrode to form a capacitor. The interlayer insulation layers of the TFT region and the capacitor region have different layer structures and have different dielectric constants. Therefore, the capacitor region can have higher capacitance while the TFT region can have lower capacitance to reduce parasitic capacitance.

摘要翻译： 提供了一种薄膜晶体管（TFT）面板，其制造方法和包括该薄膜晶体管的有机发光显示装置（OLED）。 TFT面板具有TFT区域和电容器区域。 在TFT区域中形成TFT，在电容器区域形成电容器。 TFT包括有源层，其包括源区和漏区。 在有源层上形成栅极绝缘层，并且在有源层上的栅极绝缘层上形成栅电极。 源极和漏极形成在有源层上方，分别连接到源极和漏极区。 在TFT区域中，在栅极电极和源极/漏极之间形成层间绝缘层。 在电容器区域中，在电容器下电极和电容器上电极之间形成层间绝缘层，形成电容器。 TFT区域和电容器区域的层间绝缘层具有不同的层结构并具有不同的介电常数。 因此，电容器区域可以具有更高的电容，而TFT区域可以具有较低的电容以减小寄生电容。