公开(公告)号：US20060098353A1

公开(公告)日：2006-05-11

申请号：US11269878

申请日：2005-11-09

申请人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

发明人： Hideaki Fukuzawa ,  Hiromi Yuasa ,  Katsuhiko Koui ,  Hitoshi Iwasaki

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/08 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3929 ,  H01F10/3259 ,  H01L27/224 ,  H01L27/228

摘要： A magnetoresistive element has a magnetization pinned layer a magnetization direction of which is substantially pinned in one direction, a magnetization free layer a magnetization direction of which varies depending on an external field, and a spacer layer including an insulating layer provided between the magnetization pinned layer and the magnetization free layer and current paths penetrating the insulating layer, the magnetization pinned layer or magnetization free layer located under the spacer layer comprising crystal grains separated by grain boundaries extending across a thickness thereof, in which, supposing that an in-plane position of one end of each of the crystal grains is set to 0 and an in-plane position of a grain boundary adjacent to the other end of the crystal grain is set to 100, the current path corresponding the crystal grain is formed on a region in a range between 20 and 80 of the in-plane position.

公开(公告)号：US07008702B2

公开(公告)日：2006-03-07

申请号：US09973235

申请日：2001-10-10

申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

IPC分类号： G11B5/127

CPC分类号： H01F10/30 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/325 ,  Y10S428/90 ,  Y10T428/1107 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/115 ,  Y10T428/1171 ,  Y10T428/1193 ,  Y10T428/12326 ,  Y10T428/12465 ,  Y10T428/12986 ,  Y10T428/265

摘要： A magnetoresistance effect element includes a nonmagnetic spacer layer, first and second ferromagnetic layer separated by the nonmagnetic spacer layer, and a nonmagnetic conductivity layer. The first ferromagnetic layer has a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field. The second ferromagnetic layer has first and second ferromagnetic films antiferromagnetically coupled to one another and an antiferromagnetically coupling film located between and in contact with the first and second ferromagnetic films. The magnetization of the first ferromagnetic layer freely rotates in a magnetic field signal. The nonmagnetic conductivity layer is disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic high-conductivity layer and the nonmagnetic spacer layer. The first ferromagnetic layer has a film thickness between 0.5 nanometers and 4.5 nanometers.

摘要翻译： 磁阻效应元件包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层和非磁性导电层。 第一铁磁层在零施加磁场下具有相对于第二铁磁层的磁化方向成一定角度的磁化方向。 第二铁磁层具有彼此反铁磁耦合的第一和第二铁磁膜和位于第一和第二铁磁膜之间并与其接触的反铁磁耦合膜。 第一铁磁层的磁化在磁场信号中自由旋转。 非磁性导电层设置成与第一铁磁层接触，使得第一铁磁层设置在非磁性高导电层和非磁性间隔层之间。 第一铁磁层的膜厚度在0.5纳米到4.5纳米之间。

公开(公告)号：US06313973B1

公开(公告)日：2001-11-06

申请号：US09343270

申请日：1999-06-30

申请人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

发明人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

IPC分类号： G11B530

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3272

摘要： A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.

摘要翻译： 磁阻元件包括具有下层，反铁磁膜和铁磁膜的交换耦合膜，其按顺序层压，下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属，其具有 比反铁磁膜的最近邻原子距离更长。 利用这种结构，可以改善交换耦合场并且能够长时间地满足稳定的输出。 具有双自旋阀结构的磁阻元件具有磁化调节层，其通过反并联连接层反铁磁连接到被钉扎层，以调节每个磁化调节层的饱和磁化强度和 被钉扎层的厚度。 此外，磁阻头使用巨磁电阻效应，并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。 钉扎层具有一对铁磁层，其具有不同的组成和不同的矫顽力，并且经由连接层彼此反铁磁连接，使得钉扎层的有效交换耦合场为200Oe以上。

公开(公告)号：US20090002899A1

公开(公告)日：2009-01-01

申请号：US12147843

申请日：2008-06-27

申请人： Katsuhiko Koui

发明人： Katsuhiko Koui

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G11B5/3929

摘要： According to one embodiment, a magnetoresistive element includes a magnetization fixed layer, an intermediate layer provided on the magnetization fixed layer, a free layer provided on the intermediate layer, a separating layer composed of nonmagnetic metal and provided on the free layer, and a fluctuation compensated layer whose static magnetic coupling with the free layer is disconnected by the separating layer, whose magnetization direction is fixed so as to be antiparallel to the magnetization direction of the magnetization fixed layer, and provided on the separating layer.

摘要翻译： 根据一个实施例，磁阻元件包括磁化固定层，设置在磁化固定层上的中间层，设置在中间层上的自由层，由非磁性金属构成的分离层并设置在自由层上， 补偿层，其与自由层的静磁耦合由分离层断开，分离层的磁化方向固定为与磁化固定层的磁化方向反平行，并设置在分离层上。

公开(公告)号：US07848063B2

公开(公告)日：2010-12-07

申请号：US11812933

申请日：2007-06-22

申请人： Katsuhiko Koui

发明人： Katsuhiko Koui

IPC分类号： G11B5/39

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/02 ,  G11B5/1276 ,  G11B2005/0002 ,  H01L43/08

摘要： According to one embodiment, a yoke-type magnetic head for reading out magnetic information from a medium in which information is magnetically recorded in a track direction, the head includes a magnetic pole which is provided on a plane perpendicular to a linear recording direction and has an opposing surface facing the medium, a saturation magnetic flux density Bs1, and a volume V1, a sub yoke which is formed on the plane by being connected to the magnetic pole, and has a length SYW in a direction perpendicular to the linear recording direction longer than a length SYH in a direction perpendicular to a surface of the medium, and a saturation magnetic flux density Bs2 and a volume V2, the product Bs2V2 of which is larger than the product Bs1V1, and a magnetoresistance effect film which is formed between the sub yoke and the opposing surface, and abuts the magnetic pole.

摘要翻译： 根据一个实施例，一种磁轭式磁头用于从磁道方向上磁记录信息的介质中读出磁信息，该磁头包括设在垂直于线性记录方向的平面上的磁极，并且具有 面向介质的相对表面，饱和磁通密度Bs1和体积V1，通过连接到磁极而形成在平面上的子轭，并且在垂直于线性记录方向的方向上具有长度SYW 在垂直于介质表面的方向上的长度比长度SYH以及产品Bs2V2大于乘积Bs1V1的饱和磁通密度Bs2和体积V2，以及形成在介质的表面之间的磁阻效应膜 子轭和相对表面，并且邻接磁极。

公开(公告)号：US20080002294A1

公开(公告)日：2008-01-03

申请号：US11812933

申请日：2007-06-22

申请人： Katsuhiko Koui

发明人： Katsuhiko Koui

IPC分类号： G11B5/147

CPC分类号： G11B5/39 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/02 ,  G11B5/1276 ,  G11B2005/0002 ,  H01L43/08

摘要： According to one embodiment, a yoke-type magnetic head for reading out magnetic information from a medium in which information is magnetically recorded in a track direction, the head includes a magnetic pole which is provided on a plane perpendicular to a linear recording direction and has an opposing surface facing the medium, a saturation magnetic flux density Bs1, and a volume V1, a sub yoke which is formed on the plane by being connected to the magnetic pole, and has a length SYW in a direction perpendicular to the linear recording direction longer than a length SYH in a direction perpendicular to a surface of the medium, and a saturation magnetic flux density Bs2 and a volume V2, the product Bs2V2 of which is larger than the product Bs1V1, and a magnetoresistance effect film which is formed between the sub yoke and the opposing surface, and abuts the magnetic pole.

摘要翻译： 根据一个实施例，一种磁轭式磁头用于从磁道方向上磁记录信息的介质中读出磁信息，该磁头包括设在垂直于线性记录方向的平面上的磁极，并且具有 面向介质的相对表面，饱和磁通密度Bs 1和体积V 1，通过连接到磁极而形成在平面上的子轭，并且在垂直于线性的方向上具有长度SYW 记录方向长于在与介质表面垂直的方向上的长度SYH，以及饱和磁通密度Bs 2和体积V 2，其乘积Bs 2 V 2大于乘积Bs 1 V 1， 以及形成在子轭和相对表面之间并与磁极相邻的磁阻效应膜。