利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

275 条记录 (耗时 0.043 秒)

    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same
    1.
    发明授权
    Laminated magnetorestrictive element of an exchange coupling film, an antiferromagnetic film and a ferromagnetic film and a magnetic disk drive using same 失效
    交换耦合膜的叠层磁致伸缩元件，反铁磁膜和铁磁膜以及使用它的磁盘驱动器

    公开(公告)号：US06313973B1

    公开(公告)日：2001-11-06

    申请号：US09343270

    申请日：1999-06-30

    申请人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

    发明人： Hiromi Fuke ,  Kazuhiro Saito ,  Katsuhiko Koui ,  Hideaki Fukuzawa ,  Akiko Saito ,  Hitoshi Iwasaki

    IPC分类号： G11B530

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3967 ,  G11B2005/3996 ,  H01F10/3263 ,  H01F10/3268 ,  H01F10/3272

    摘要： A magnetoresistive element comprises an exchange coupling film having a under layer, an antiferromagnetic film and a ferromagnetic film, which are laminated in that order, the under layer including a metal having a face centered cubic crystal structure or hexagonal closest packing crystal structure which have a longer nearest neighbor atomic distance than that of the antiferromagnetic film. With this construction, it is possible to improve the exchange coupling field and to satisfy a stable output over a long period of time. A magnetoresistive element having a dual spin valve structure has a magnetization adjusting layer, which is antiferromagnetically connected to a pinned layer via an anti-parallel connection layer, to adjust the value of the product of the saturation magnetization of each of the magnetization adjusting layer and the pinned layer by the thickness thereof. Moreover, a magnetoresistance head use a giant magnetoresistance effect, and has at least one pair of pinned layer and free layer arranged via a non-magnetic spacer layer. The pinned layer has a pair of ferromagnetic layers which have different compositions and different coercive forces and which are antiferromagnetically connected to each other via a connection layer, so that the effective exchange coupling field of the pinned layer is 200 Oe or more.

    摘要翻译： 磁阻元件包括具有下层，反铁磁膜和铁磁膜的交换耦合膜，其按顺序层压，下层包括具有面心立方晶体结构的金属或具有六面体最密堆积晶体结构的金属，其具有 比反铁磁膜的最近邻原子距离更长。 利用这种结构，可以改善交换耦合场并且能够长时间地满足稳定的输出。 具有双自旋阀结构的磁阻元件具有磁化调节层，其通过反并联连接层反铁磁连接到被钉扎层，以调节每个磁化调节层的饱和磁化强度和 被钉扎层的厚度。 此外，磁阻头使用巨磁电阻效应，并且具有通过非磁性间隔层布置的至少一对被钉扎层和自由层。 钉扎层具有一对铁磁层，其具有不同的组成和不同的矫顽力，并且经由连接层彼此反铁磁连接，使得钉扎层的有效交换耦合场为200Oe以上。

    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system
    5.
    发明授权
    Magnetoresistance effect element, magnetic head, magnetic head assembly, magnetic storage system 失效
    磁阻效应元件，磁头，磁头组件，磁存储系统

    公开(公告)号：US07738220B1

    公开(公告)日：2010-06-15

    申请号：US11779034

    申请日：2007-07-17

    申请人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    发明人： Hideaki Fukuzawa ,  Yuzo Kamiguchi ,  Katsuhiko Koui ,  Shin-ichi Nakamura ,  Hitoshi Iwasaki ,  Kazuhiro Saito ,  Hiromi Fuke ,  Masatoshi Yoshikawa ,  Susumu Hashimoto ,  Masashi Sahashi

    IPC分类号： G11B5/39

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3932 ,  G11B5/66 ,  G11B2005/3996 ,  Y10T428/1121

    摘要： A magnetoresistance effect element, comprising a nonmagnetic spacer layer, first and second ferromagnetic layers separated by the nonmagnetic spacer layer, the first ferromagnetic layer having a magnetization direction at an angle relative to a magnetization direction of the second ferromagnetic layer at zero applied magnetic field, the magnetization of the first ferromagnetic layer freely rotating in a magnetic field signal, a magnetoresistance effect-improving layer comprising a plurality of metal films and disposed in contact with the first ferromagnetic layer so that the first ferromagnetic layer is disposed between the nonmagnetic spacer layer and the magnetoresistance effect-improving layer, one of the plurality of metal films disposed in contact with the first ferromagnetic layer contains metal element of not solid solution with metal element of the first ferromagnetic layer and a nonmagnetic underlayer or a nonmagnetic protecting layer disposed in contact with the magnetoresistance effect-improving layer so that the magnetoresistance effect-improving layer is disposed between the first ferromagnetic layer and the nonmagnetic underlayer or the nonmagnetic protecting layer.

    摘要翻译： 一种磁阻效应元件，包括非磁性间隔层，由非磁性间隔层隔开的第一和第二铁磁层，第一铁磁层具有相对于第二铁磁层在零施加磁场的磁化方向的一个角度的磁化方向， 在磁场信号中自由旋转的第一铁磁层的磁化，包含多个金属膜并与第一铁磁层接触设置的磁阻效应改善层，使得第一铁磁层设置在非磁性间隔层和 设置成与第一铁磁层接触的多个金属膜中的一个的磁阻效应改善层包含不是第一铁磁层的金属元素的非固溶金属元素和非磁性底层或与非磁性保护层接触的非磁性保护层 磁阻 使得磁阻效应改善层设置在第一铁磁层和非磁性底层或非磁性保护层之间。