公开(公告)号：US06222773B1

公开(公告)日：2001-04-24

申请号：US09592661

申请日：2000-06-13

申请人： Tooru Tanzawa ,  Nobuaki Otsuka ,  Hironori Banba ,  Shigeru Atsumi ,  Masao Kuriyama ,  Seiichi Mori ,  Seiji Yamada

发明人： Tooru Tanzawa ,  Nobuaki Otsuka ,  Hironori Banba ,  Shigeru Atsumi ,  Masao Kuriyama ,  Seiichi Mori ,  Seiji Yamada

IPC分类号： G11C1600

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/14

摘要： A NOR type flash memory includes a plurality of word lines, a plurality of bit lines, at least one bit line, a plurality of nonvolatile memory cells, a row decoder, a cell selection circuit and a programming load. Each of the plurality of nonvolatile memory cells includes a gate electrode, drain electrode and source electrode and the gate electrode is connected to a corresponding one of the plurality of word lines, the drain electrode is connected to a corresponding one of the plurality of bit lines and the source electrode is connected to the source line. The row decoder selects one of the plurality of word lines at the time of data programming. The cell selection circuit includes a column decoder and column gates and is constructed to simultaneously select one bit line from each of the plurality of groups among the plurality of bit lines. The programming load increases the number of programming bits with the progress of programming when data of plural bits is programmed into a plurality of memory cells simultaneously selected by the cell selection circuit.

摘要翻译： NOR型闪速存储器包括多个字线，多个位线，至少一个位线，多个非易失性存储器单元，行解码器，单元选择电路和编程负载。 多个非易失性存储单元中的每一个包括栅电极，漏电极和源电极，并且栅电极连接到多个字线中的相应一个字线，漏极连接到多个位线中的相应一个位线 并且源极连接到源极线。 行解码器在数据编程时选择多个字线之一。 单元选择电路包括列解码器和列门，并被构造为从多个位线中的多个组中的每一个同时选择一个位线。 当多个位的数据被编程到由单元选择电路同时选择的多个存储单元中时，编程负载增加了编程进程的编程位数。

公开(公告)号：US06118697A

公开(公告)日：2000-09-12

申请号：US324775

申请日：1999-06-03

申请人： Tooru Tanzawa ,  Nobuaki Otsuka ,  Hironori Banba ,  Shigeru Atsumi ,  Masao Kuriyama ,  Seiichi Mori ,  Seiji Yamada

发明人： Tooru Tanzawa ,  Nobuaki Otsuka ,  Hironori Banba ,  Shigeru Atsumi ,  Masao Kuriyama ,  Seiichi Mori ,  Seiji Yamada

IPC分类号： G11C16/02 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  G11C16/00

CPC分类号： G11C16/10 ,  G11C16/0483 ,  G11C16/14

摘要： A NOR type flash memory includes a plurality of word lines, a plurality of bit lines, at least one bit line, a plurality of nonvolatile memory cells, a row decoder, a cell selection circuit and a programming load. Each of the plurality of nonvolatile memory cells includes a gate electrode, drain electrode and source electrode and the gate electrode is connected to a corresponding one of the plurality of word lines, the drain electrode is connected to a corresponding one of the plurality of bit lines and the source electrode is connected to the source line. The row decoder selects one of the plurality of word lines at the time of data programming. The cell selection circuit includes a column decoder and column gates and is constructed to simultaneously select one bit line from each of the plurality of groups among the plurality of bit lines. The programming load increases the number of programming bits with the progress of programming when data of plural bits is programmed into a plurality of memory cells simultaneously selected by the cell selection circuit.

摘要翻译： NOR型闪速存储器包括多个字线，多个位线，至少一个位线，多个非易失性存储器单元，行解码器，单元选择电路和编程负载。 多个非易失性存储单元中的每一个包括栅电极，漏电极和源电极，并且栅电极连接到多个字线中的相应一个字线，漏极连接到多个位线中的相应一个位线 并且源极连接到源极线。 行解码器在数据编程时选择多个字线之一。 单元选择电路包括列解码器和列门，并被构造为从多个位线中的多个组中的每一个同时选择一个位线。 当多个位的数据被编程到由单元选择电路同时选择的多个存储单元中时，编程负载增加了编程进程的编程位数。

公开(公告)号：US5706702A

公开(公告)日：1998-01-13

申请号：US668281

申请日：1996-06-26

申请人： Seiji Yamada

发明人： Seiji Yamada

IPC分类号： F16H59/04 ,  F16C1/26 ,  F16H61/34 ,  F16H61/36

CPC分类号： F16C1/105 ,  F16C1/106 ,  F16C1/262 ,  F16C1/265 ,  F16H61/36 ,  F16H59/042 ,  Y10T74/20049 ,  Y10T74/2042

摘要： Here is disclosed a controller for operation of transmission in motor car comprising a control cable (14) of triple structure consisting of an outer tube (15), an inner tube (16) slidably inserted into the outer tube (15) and a length of wire (17) slidably inserted into the inner tube (16), characterized by that any one end of the outer tube (15) is fixed to a car body, one end of any one of the inner tube (16) and the wire (17) is engaged with a SELECT mode operating mechanism provided adjacent a control lever (6) while one end of the other one of the inner tube (16) and the wire (17) is engaged with a SHIFT mode operating mechanism also provided adjacent the control lever (6), the other end of the outer tube (15) is fixed to a transmission casing, the other end of any one of the inner tube (16) and the wire (17) is engaged with a SELECT mode operating mechanism provided adjacent a transmission unit while the other end of the other one of the inner tube (16) and the wire (17) is engaged with a SHIFT mode operating mechanism provided adjacent the transmission unit.

摘要翻译： 这里公开了一种用于在电动汽车中进行变速器操作的控制器，其包括三重结构的控制电缆（14），其包括外管（15），可滑动地插入外管（15）中的内管（16） 所述线（17）可滑动地插入所述内管（16）中，其特征在于，所述外管（15）的任一端固定到车体，所述内管（16）和所述线 17）与在控制杆（6）附近设置的选择模式操作机构接合，而内管（16）和线（17）中的另一个的一端与还设置在相邻的内管 控制杆（6），外管（15）的另一端固定在变速器壳体上，内管（16）和线（17）中的任何一个的另一端与选择模式操作机构 设置在传动单元附近，而内管（16）和线（17）中的另一个的另一端是接合的 用与传送单元相邻的SHIFT模式操作机构进行编辑。

公开(公告)号：US5432109A

公开(公告)日：1995-07-11

申请号：US889281

申请日：1992-05-28

申请人： Seiji Yamada

发明人： Seiji Yamada

IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11521

摘要： A method for manufacturing a floating gate field effect transistor includes the steps of forming a plurality of first band-like insulating films over a semiconductor substrate in a parallel, spaced-apart relation and a second insulating film between the first insulating films and having a thickness smaller than that of the first insulating film, forming a plurality of first conductive layers selectively over the insulating layer and a plurality of second band-like conductive layers over the first conductive layers in a spaced-apart relation and in a direction perpendicular to the first and second insulating films, the first conductive layer having a width substantially the same as that of the second conductive layer, coating a first resist over a whole surface of a resultant structure and patterning it so as to protect a substantive source region, removing the first insulating film at those areas not covered by the first resist, removing the first resist, forming a third insulating film by a thermal oxidation, and implanting an impurity ion into an element formation area in the semiconductor substrate in a self-aligned relation to the source region of a first conductivity type and forming a first impurity region, the conductivity type of the impurity being opposite to that of the substrate.

摘要翻译： 制造浮栅场效应晶体管的方法包括以下步骤：在半导体衬底上以平行间隔开的​​关系形成多个第一带状绝缘膜，在第一绝缘膜之间形成第二绝缘膜，并具有厚度 小于第一绝缘膜的厚度，在绝缘层上选择性地形成多个第一导电层，在第一导电层上形成多个第二带状导电层，间隔开的关系和垂直于第一绝缘膜的方向 和第二绝缘膜，所述第一导电层具有与所述第二导电层的宽度基本相同的宽度，在所得结构的整个表面上涂覆第一抗蚀剂并将其图案化，以便保护实质源区，去除所述第一导电层 在未被第一抗蚀剂覆盖的区域处的绝缘膜，去除第一抗蚀剂，形成第三绝缘膜 m，并且以与第一导电类型的源极区域自对准的关系将杂质离子注入到半导体衬底的元件形成区域中，并形成第一杂质区域，杂质的导电类型相反 到底物的。

公开(公告)号：US5208173A

公开(公告)日：1993-05-04

申请号：US672631

申请日：1991-03-20

申请人： Seiji Yamada ,  Kiyomi Naruke

发明人： Seiji Yamada ,  Kiyomi Naruke

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L29/788 ,  H01L29/792

CPC分类号： H01L21/28273

摘要： The present invention provides a method of manufacturing a nonvolatile semiconductor memory device. In the method of the present invention. Arsenic ions are implanted into an element region of a silicon substrate so as to form a first impurity region. Then, an insulating film is formed on the silicon substrate in the element region, followed by forming a heat resistant film on the entire surface of the silicon substrate. Further, a resist film is formed on the silicon substrate, followed by patterning the resist film to form an opening on at least the first impurity region. After the patterning step, the heat resistant film positioned below the opening of the resist film is removed, followed by implanting phosphorus ions into the substrate using the patterned resist film as a mask so as to form a second impurity region. In the next step, the resist film is removed and, then, annealing is applied with the heat resistant film used as a mask. After the annealing step, the resist film is removed, and an annealing is performed with the heat resistant film used as a mask, followed by removing the insulating film using the heat resistant film as a mask. Finally, a tunnel oxide film is formed on that portion of the silicon substrate, followed by forming an electrode on the tunnel oxide film so as to manufacture a desired nonvolatile semiconductor memory device.

公开(公告)号：US5084832A

公开(公告)日：1992-01-28

申请号：US585221

申请日：1990-09-19

申请人： Seiji Yamada ,  Katsuaki Kono ,  Kiichi Terashima

发明人： Seiji Yamada ,  Katsuaki Kono ,  Kiichi Terashima

IPC分类号： G01G13/16 ,  G01G19/387 ,  G01G19/393 ,  G01G23/37

CPC分类号： G01G23/3721 ,  G01G13/16 ,  G01G19/387 ,  G01G19/393

摘要： For a system such as a combinational weighing system that requires a large number of parameters to be set for its operation, groups of parameters which frequently assume same sets of values are identified and each of such sets is assigned a reservation number. Memory space for storing values assumed by the parameters can be reduced if these values are grouped by such frequently occurring combinations and the user specifies a single reservation number instead of specifying values of the individual parameters. Selection of operating condition is effected by an input device with a touch screen. For some parameters, currently set values are displayed as a bar graph and a user can set or reset a value directly on the screen by moving a cursor on the bar graph.

摘要翻译： 对于需要为其操作设置大量参数的诸如组合称重系统的系统，识别经常假定相同值的参数组，并且为每个这样的组分配预留号码。 如果这些值通过这种经常出现的组合分组，并且用户指定单个预约号码而不是指定各个参数的值，则可以减少用于存储由参数假定的值的存储空间。 操作条件的选择由具有触摸屏的输入设备实现。 对于某些参数，当前设置的值显示为条形图，用户可以通过在条形图上移动光标直接在屏幕上设置或重置值。

公开(公告)号：US5068827A

公开(公告)日：1991-11-26

申请号：US448358

申请日：1989-12-11

申请人： Seiji Yamada ,  Kiyomi Naruke

发明人： Seiji Yamada ,  Kiyomi Naruke

IPC分类号： G11C17/00 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/788 ,  H01L29/792

CPC分类号： G11C16/14 ,  G11C16/10

摘要： In a method of applying a voltage pulse for injecting/extracting electrons into/from a non-volatile semiconductor memory in which high and low levels of a threshold voltage corresponding to presence and absence of storage of electrons are caused to correspond to binary information, the method includes the steps of generating a plurality of voltage pulses each having an ability of injecting or extracting only a portion of all electrons to be stored, and applying the plurality of voltage pulses to the non-volatile semiconductor memory to thereby carry out injection/extraction of all the electrons.

公开(公告)号：US4811256A

公开(公告)日：1989-03-07

申请号：US931230

申请日：1986-11-14

申请人： Seiji Yamada ,  Katsuaki Kono ,  Kiichi Terashima

发明人： Seiji Yamada ,  Katsuaki Kono ,  Kiichi Terashima

IPC分类号： G01G13/16 ,  G01G19/387 ,  G01G19/393 ,  G01G23/37 ,  G01G19/04 ,  G01G23/22

CPC分类号： G01G19/387 ,  G01G13/16 ,  G01G19/393 ,  G01G23/3721

摘要： For a system such as a combinational weighing system that requires a large number of parameters to be set for its operation, groups of parameters which frequently assume same sets of values are identified and each of such sets is assigned a reservation number. Memory space for storing values assumed by the parameters can be reduced if these values are grouped by such frequently occurring combinations and the user specifies a single reservation number instead of specifying values of the individual parameters. Selection of operating condition is effected by an input device with a touch screen. For some parameters, currently set values are displayed as a bar graph and a user can set or reset a value directly on the screen by moving a cursor on the bar graph. Operating conditions can be changed in each cycle of the combinational calculation without stopping the overall operation of the system.

摘要翻译： 对于需要为其操作设置大量参数的诸如组合称重系统的系统，识别经常假定相同值的参数组，并且为每个这样的组分配预留号码。 如果这些值通过这种经常出现的组合分组，并且用户指定单个预约号码而不是指定各个参数的值，则可以减少用于存储由参数假定的值的存储空间。 操作条件的选择由具有触摸屏的输入设备实现。 对于某些参数，当前设置的值显示为条形图，用户可以通过在条形图上移动光标直接在屏幕上设置或重置值。 可以在组合计算的每个周期中改变运行条件，而不会停止系统的整体运行。

公开(公告)号：US4627012A

公开(公告)日：1986-12-02

申请号：US726600

申请日：1985-04-23

申请人： Seiji Yamada

发明人： Seiji Yamada

IPC分类号： G01G19/393 ,  G01G19/22 ,  G01G19/52

CPC分类号： G01G19/393

摘要： A combinatorial weighing method for combinatorially weighing out articles supplied to a plurality of weighing machines includes the step of making a comparison between a predetermined percentage of a set target weight value and a sum total of weight values from weighing machines that have participated in a combinatorial weighing operation. This step is performed when an optimum combination is not obtained through a combinatorial calculation. Based on the results of the comparison, weighing machines indicating comparatively low weight values are supplied with additional articles. In another embodiment, the combinatorial weighing method includes the steps of executing combinatorial weighing using a number of weighing machines greater than a prescribed number, deciding on the basis of the sum total of the weight values from weighing machines that have participated in the combinatorial weighing operation whether to perform a combinatorial calculation one or more times, and changing over automatically between high-speed, low-capacity processing and low-speed, high-capacity processing in dependence upon the amount of articles supplied.

摘要翻译： 用于组合称量供给多个称重机的物品的组合称重方法包括以下步骤：将参与组合称重的称重机的设定目标重量值的预定百分比与重量值的总和进行比较 操作。 当通过组合计算未获得最佳组合时，执行该步骤。 根据比较结果，提供了表示相对较低重量值的称重机附加物品。 在另一实施例中，组合称重方法包括以下步骤：使用大于规定数量的称重机执行组合称重，基于参与组合称重操作的称重机的重量值的总和来确定 是否进行一次或多次组合计算，并根据所供应的物品数量，在高速，低容量处理和低速，大容量处理之间自动切换。

公开(公告)号：US4344681A

公开(公告)日：1982-08-17

申请号：US238029

申请日：1981-02-25

申请人： Seiji Yamada

发明人： Seiji Yamada

IPC分类号： G03B7/00 ,  G03B7/08 ,  G03B7/091 ,  G03B17/18

CPC分类号： G03B7/097

摘要： In a multi-mode exposure control device for a photographic camera which automatically controls camera exposure in any desired one of diaphragm aperture priority mode, shutter speed priority mode and program mode, the selection of the exposure control mode as well as the setting of the exposure parameter to be manually determined are effected by manual operation of a single one of a plurality of manual members. A signal selector circuit receives three pairs of diaphragm control and shutter control signals for the three exposure control modes, and selects one of the pairs depending on the last operated one of diaphragm aperture setting, shutter speed setting and program mode selecting manual members. The selected pair of diaphragm control signal and shutter control signal are respectively supplied to diaphragm and shutter control circuits as well as to display devices.

摘要翻译： 在用于照相机的多模式曝光控制装置中，可以以任何所需的光阑孔径优先模式，快门速度优先模式和程序模式中的任何一种自动控制照相机曝光，选择曝光控制模式以及设置曝光 要手动确定的参数通过手动操作多个手动构件中的单个操作来实现。 信号选择器电路接收三对曝光控制模式的三对光圈控制和快门控制信号，并根据最后操作的光圈孔径设置，快门速度设置和程序模式选择手动成员来选择一对。 所选择的一对光阑控制信号和快门控制信号分别提供给光阑和快门控制电路以及显示装置。