公开(公告)号：US08115160B2

公开(公告)日：2012-02-14

申请号：US12398465

申请日：2009-03-05

申请人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

发明人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

IPC分类号： H03K17/78 ,  H01J40/14 ,  H02H9/00

CPC分类号： H02H9/04 ,  H02H7/20 ,  Y02E10/56

摘要： A protection circuit and a photoelectric conversion device are provided, each of which includes a first wiring, a second wiring, a first switch, a second switch, a capacitor, and a comparing circuit configured to generate a signal corresponding to a potential of the first wiring and a potential of the second wiring, and supply the signal to the first switch and the second switch. The first wiring is electrically connected to a first terminal of the first switch, and the second wiring is electrically connected to a first terminal of the second switch. A second terminal of the first switch is electrically connected to a first electrode of the capacitor, and a second terminal of the second switch is electrically connected to a second electrode of the capacitor.

摘要翻译： 提供一种保护电路和光电转换装置，每个保护电路和光电转换装置包括第一布线，第二布线，第一开关，第二开关，电容器和比较电路，其被配置为产生对应于第一布线 布线和第二布线的电位，并将信号提供给第一开关和第二开关。 第一布线电连接到第一开关的第一端子，第二布线电连接到第二开关的第一端子。 第一开关的第二端子电连接到电容器的第一电极，并且第二开关的第二端子电连接到电容器的第二电极。

公开(公告)号：US08054596B2

公开(公告)日：2011-11-08

申请号：US12400380

申请日：2009-03-09

申请人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

发明人： Jun Koyama ,  Yoshifumi Tanada ,  Hideaki Shishido

IPC分类号： H02H9/00 ,  H01C7/12 ,  H02H1/00 ,  H02H1/04 ,  H02H3/22 ,  H02H9/06

CPC分类号： H01L27/0251 ,  G02F1/136204

摘要： An element is protected without hampering an actual operation in the case where overvoltage that might damage the element is applied. A semiconductor device includes a first potential supply terminal 100; a second potential supply terminal 101; a protection circuit 107 which includes a voltage divider 102 electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101, a control circuit 103, and a bypass circuit 106; and a functional circuit 108 which is electrically connected to the first potential supply terminal 100 and the second potential supply terminal 101 through the protection circuit 107.

摘要翻译： 在可能损坏元件的过电压被施加的情况下，元件被保护而不妨碍实际操作。 半导体器件包括第一电位供给端子100; 第二电位供给端子101; 保护电路107，其包括电连接到第一电位端子100和第二电位端子101的分压器102，控制电路103和旁路电路106; 以及通过保护电路107与第一电位供给端子100和第二电位供给端子101电连接的功能电路108。

公开(公告)号：US20110115758A1

公开(公告)日：2011-05-19

申请号：US12917528

申请日：2010-11-02

申请人： Hajime Kimura ,  Yoshifumi Tanada

发明人： Hajime Kimura ,  Yoshifumi Tanada

IPC分类号： G09G3/30 ,  H01L25/00 ,  G05F3/02 ,  G06F3/038

CPC分类号： H01L27/3276 ,  G09G3/20 ,  G09G3/2011 ,  G09G3/2022 ,  G09G3/2077 ,  G09G3/30 ,  G09G3/3233 ,  G09G3/3258 ,  G09G3/3266 ,  G09G3/3275 ,  G09G3/3283 ,  G09G3/3291 ,  G09G3/3648 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2300/043 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/027 ,  G09G2310/0286 ,  G09G2310/08 ,  G09G2320/0233 ,  G09G2320/043 ,  H01L27/3262 ,  H01L27/3265

摘要： Display irregularities in light emitting devices, which develop due to dispersions per pixel in the threshold value of TFTs for supplying electric current to light emitting elements, are obstacles to increasing the image quality of the light emitting devices. An electric potential in which the threshold voltage of a TFT (105) is either added to or subtracted from the electric potential of a reset signal line (110) is stored in capacitor means (108). A voltage, in which the corresponding threshold voltage is added to an image signal, is applied to a gate electrode of a TFT (106). TFTs within a pixel are disposed adjacently, and dispersion in the characteristics of the TFTs does not easily develop. The threshold value of the TFT (105) is thus cancelled, even if the threshold values of the TFTs (106) differ per pixel, and a predetermined drain current can be supplied to an EL element (109).

摘要翻译： 由于用于向发光元件提供电流的TFT的阈值中的每像素的分散而发展的发光器件的显示不规则性是增加发光器件的图像质量的障碍。 在电容器装置（108）中存储有将TFT（105）的阈值电压加到或从复位信号线（110）的电位中减去的电位。 将相应的阈值电压加到图像信号上的电压施加到TFT（106）的栅电极。 像素内的TFT相邻配置，TFT的特性的分散不容易发展。 即使TFT（106）的阈值每像素不同，TFT（105）的阈值也被消除，并且可以向EL元件（109）提供预定的漏极电流。

公开(公告)号：US07830080B2

公开(公告)日：2010-11-09

申请号：US11620408

申请日：2007-01-05

申请人： Yoshifumi Tanada

发明人： Yoshifumi Tanada

IPC分类号： H01L51/50 ,  H01L51/52 ,  H01L51/56

CPC分类号： G09G3/3258 ,  G09G2320/029 ,  G09G2330/021

摘要： In a display device with a pixel constituted using an EL element or the like, leak light from a monitoring element that is provided for correcting changes in the properties of the element due to the temperature change, deterioration, or the like is effectively suppressed. The display device has a structure in which an insulating layer is formed over a substrate and a plurality of light emitting elements each of which has a light emitting layer interposed between a first electrode and a second electrode are formed over the insulating layer. Furthermore, at least part of the plurality of light emitting elements has a structure in which an opening is formed in the insulating layer, and the light emitting layer is formed in the opening region of the insulating layer.

摘要翻译： 在具有使用EL元件等构成的像素的显示装置中，有效地抑制了用于校正由于温度变化，劣化等导致的元件的特性变化的监视元件的泄漏光。 显示装置具有在衬底上形成绝缘层的结构，并且在绝缘层上形成多个发光元件，每个发光元件具有介于第一电极和第二电极之间的发光层。 此外，多个发光元件的至少一部分具有在绝缘层中形成开口的结构，并且发光层形成在绝缘层的开口区域中。

公开(公告)号：US07791571B2

公开(公告)日：2010-09-07

申请号：US11568158

申请日：2005-04-14

申请人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

发明人： Hisashi Ohtani ,  Yoshifumi Tanada ,  Aya Anzai

IPC分类号： G09G3/30 ,  G09G3/32

CPC分类号： H01L27/3209 ,  G09G3/2022 ,  G09G3/2025 ,  G09G2300/0452 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2320/043 ,  G09G2330/02 ,  H01L27/3244 ,  H01L2251/562

摘要： The invention provides a light emitting device which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. Moreover, the invention relates to a driving method which can suppress the reduction of luminance in accordance with the light emission time and light emission at a high luminance. The light emitting device of the invention can display a plurality of colors of which brightness and chromaticity are different by visually mixing light emission of a plurality of light emitting elements of which light emission colors are different. When a visually mixed display color is formed, a white light emission is exhibited.

摘要翻译： 本发明提供一种可以根据发光时间和高亮度的发光抑制亮度的降低的发光装置。 此外，本发明涉及一种驱动方法，其可以根据发光时间和高亮度的发光来抑制亮度的降低。 本发明的发光装置可以通过视觉上混合发光颜色不同的多个发光元件的发光来显示亮度和色度不同的多种颜色。 当形成视觉上混合的显示颜色时，表现出白色发光。

公开(公告)号：US20090322716A1

公开(公告)日：2009-12-31

申请号：US12552718

申请日：2009-09-02

申请人： Munehiro Azami ,  Shou Nagao ,  Yoshifumi Tanada

发明人： Munehiro Azami ,  Shou Nagao ,  Yoshifumi Tanada

IPC分类号： G06F3/038 ,  H01L27/088 ,  H03K17/16 ,  H01L29/786 ,  H03K19/094 ,  G09G3/36

CPC分类号： H01L29/786 ,  H03K19/01714 ,  H03K19/01721

摘要： There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance (205) is provided between a gate and a source of a TFT (203) connected to an output node, and a circuit formed of TFTs (201) and (202) has a function to bring a node α into a floating state. When the node α is in the floating state, a potential of the node α is caused higher than VDD by using gate-source capacitance coupling of the TFT (203) through the capacitance (205), thus an output signal having an amplitude of VDD-GND can be normally obtained without causing amplitude attenuation due to the threshold value of the TFT.

摘要翻译： 提供了一种半导体器件，其中可以通过仅使用一种导电类型的TFT构成电路并且可以正常获得输出信号的电压振幅来减小制造步骤。 电容（205）设置在连接到输出节点的TFT（203）的栅极和源极之间，并且由TFT（201）和（202）形成的电路具有使节点α成为浮置状态的功能 。 当节点α处于浮置状态时，通过使用TFT（203）通过电容（205）的栅 - 源电容耦合，使得节点α的电位高于VDD，因此具有VDD的幅度的输出信号 通常可以获得-GND，而不会由于TFT的阈值引起振幅衰减。

公开(公告)号：US07403177B2

公开(公告)日：2008-07-22

申请号：US10717970

申请日：2003-11-21

申请人： Yoshifumi Tanada ,  Aya Anzai

发明人： Yoshifumi Tanada ,  Aya Anzai

IPC分类号： G09G3/30 ,  G09G3/10 ,  H01J1/62 ,  H01J63/04

CPC分类号： G09G3/30 ,  G09G3/2022 ,  G09G3/32 ,  G09G2300/0452 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2310/0235 ,  G09G2310/0267 ,  G09G2310/027

摘要： It is characterized in that the image signal selecting the light-emission/no light-emission of the first to third light-emitting elements 112 to 114 formed by lamination is input through only the transistor for switching 107, and the specific light-emission is selectively emitted by controlling the potential of the first to third current supply lines 103 to 105.

摘要翻译： 其特征在于，通过仅通过晶体管107输入通过层叠形成的选择第一至第三发光元件112至114的发光/不发光的图像信号，并且特定发光是 通过控制第一至第三电流供应线103至105的电位而选择性地发射。

公开(公告)号：US07394102B2

公开(公告)日：2008-07-01

申请号：US11328456

申请日：2006-01-10

申请人： Shou Nagao ,  Munehiro Azami ,  Yoshifumi Tanada

发明人： Shou Nagao ,  Munehiro Azami ,  Yoshifumi Tanada

IPC分类号： H01L27/12

CPC分类号： G09G3/3648 ,  G09G3/3614 ,  G09G3/3688 ,  G09G2300/0408 ,  G09G2300/0426 ,  G09G2310/0254 ,  G09G2310/0283 ,  G09G2310/0286 ,  G09G2310/0289 ,  G09G2310/0291 ,  G09G2310/0297 ,  G09G2310/08 ,  G11C19/00 ,  G11C19/28 ,  H01L2924/0002 ,  H03K19/01735 ,  H03K19/096 ,  H01L2924/00

摘要： A circuit is provided which is constituted by TFTs of one conductivity type, and which is capable of outputting signals of a normal amplitude. When an input clock signal CK1 becomes a high level, each of TFTs (101, 103) is turned on to settle at a low level the potential at a signal output section (Out). A pulse is then input to a signal input section (In) and becomes high level. The gate potential of TFT (102) is increased to (VDD−V thN) and the gate is floated. TFT (102) is thus turned on. Then CK1 becomes low level and each of TFTs (101, 103) is turned off. Simultaneously, CK3 becomes high level and the potential at the signal output section is increased. Simultaneously, the potential at the gate of TFT (102) is increased to a level equal to or higher than (VDD+V thN) by the function of capacitor (104), so that the high level appearing at the signal output section (Out) becomes equal to VDD. When SP becomes low level; CK3 becomes low level; and CK1 becomes high level, the potential at the signal output section (Out) becomes low level again.

摘要翻译： 提供一种电路，其由一种导电类型的TFT构成，并且能够输出正常振幅的信号。 当输入时钟信号CK 1变为高电平时，TFT（101,103）中的每一个导通以将信号输出部分（Out）处的电位置于低电平。 然后将脉冲输入到信号输入部（In）并变为高电平。 TFT（102）的栅极电位增加到（VDD-V thN），栅极浮起来。 TFT（102）因此被导通。 然后，CK 1变为低电平，并且每个TFT（101,103）被关断。 同时，CK 3变为高电平，信号输出部分的电位增加。 同时，通过电容器（104）的功能，TFT（102）的栅极处的电位增加到等于或高于（VDD + V thN）的电平，使得出现在信号输出部分（Out ）变为等于VDD。 当SP变低时 CK 3变低; 并且CK 1变为高电平时，信号输出部（Out）的电位再次变为低电平。

公开(公告)号：US07329985B2

公开(公告)日：2008-02-12

申请号：US11479802

申请日：2006-06-30

申请人： Shunpei Yamazaki ,  Yuugo Goto ,  Yoshifumi Tanada

发明人： Shunpei Yamazaki ,  Yuugo Goto ,  Yoshifumi Tanada

IPC分类号： H05B33/12

CPC分类号： H01L51/5284 ,  H01L27/322 ,  H01L27/3244 ,  H01L2251/5315

摘要： A self-light emitting display device with top-emission usually has no film that is capable of light shielding. Therefore, it is necessary to form a light-shielding layer additionally with, which leads the number of processes to increase.In the present invention, plural films selected from a first coloring layer 161, a second coloring layer 162, and a third coloring layer 163 formed on an opposing substrate are laminated to form a light-shielding portion without using a light-shielding mask.

摘要翻译： 具有顶部发射的自发光显示装置通常不具有能够遮光的膜。 因此，需要另外形成遮光层，导致加工次数增加。 在本发明中，从形成在相对基板上的第一着色层161，第二着色层162和第三着色层163中选择的多个膜被层压以形成遮光部分而不使用遮光掩模。

公开(公告)号：US20070278498A1

公开(公告)日：2007-12-06

申请号：US11754505

申请日：2007-05-29

申请人： Yasuo Nakamura ,  Yoshifumi Tanada

发明人： Yasuo Nakamura ,  Yoshifumi Tanada

IPC分类号： H01L33/00

CPC分类号： H05B33/145

摘要： A light emitting device including a thin film transistor and an inorganic EL element, and a manufacturing method thereof. The present invention provides a manufacturing method of a light emitting device, including a step of forming a light emitting layer including at least a layer made from an inorganic fluorescent material over a first electrode while heating a substrate provided with the first electrode at a temperature in the range of 100 to 1200° C., preferably 200 to 800° C., and a step of forming a second electrode and a thin film transistor after the light emitting layer is formed.

摘要翻译： 一种包括薄膜晶体管和无机EL元件的发光器件及其制造方法。 本发明提供了一种发光器件的制造方法，其包括以下步骤：在第一电极上形成至少包括由无机荧光材料制成的层的发光层，同时在设置有第一电极的衬底的温度 范围为100〜1200℃，优选为200〜800℃，以及在形成发光层之后形成第二电极和薄膜晶体管的工序。