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公开(公告)号：US20250126897A1
公开(公告)日：2025-04-17
申请号：US19002241
申请日：2024-12-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka OKAZAKI , Tomoaki MORIWAKA , Shinya SASAGAWA , Takashi OHTSUKI
IPC: H10D86/60 , H01L21/768 , H01L23/532 , H10D30/01 , H10D30/67 , H10D86/40 , H10D99/00
Abstract: To provide a miniaturized semiconductor device with low power consumption. A method for manufacturing a wiring layer includes the following steps: forming a second insulator over a first insulator; forming a third insulator over the second insulator; forming an opening in the third insulator so that it reaches the second insulator; forming a first conductor over the third insulator and in the opening; forming a second conductor over the first conductor; and after forming the second conductor, performing polishing treatment to remove portions of the first and second conductors above a top surface of the third insulator. An end of the first conductor is at a level lower than or equal to the top level of the opening. The top surface of the second conductor is at a level lower than or equal to that of the end of the first conductor.
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公开(公告)号：US20250107355A1
公开(公告)日：2025-03-27
申请号：US18832360
申请日：2023-01-13
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shinya SASAGAWA , Ryota HODO , Takahiro FUJIE , Yoshikazu HIURA , Kentaro SUGAYA
IPC: H10K59/124 , H10K50/19 , H10K59/12
Abstract: A display device with high display quality is provided. The display device includes a first light-emitting device, a second light-emitting device placed adjacent to the first light-emitting device, and a first insulating layer. The first light-emitting device includes a first pixel electrode, a first EL layer over the first pixel electrode, and a common electrode over the first EL layer. The second light-emitting device includes a second pixel electrode, a second EL layer over the second pixel electrode, and the common electrode over the second EL layer. Part of a side surface of the first EL layer and part of a side surface of the second EL layer are placed to face each other. Part of the first insulating layer is placed at a position interposed between a side end portion of the first EL layer and a side end portion of the second EL layer. The first insulating layer is in contact with part of the top surface of the first EL layer and part of the top surface of the second EL layer.
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93.发明申请公开(公告)号：US20250098409A1
公开(公告)日：2025-03-20
申请号：US18292169
申请日：2022-08-08
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shinya SASAGAWA , Ryota HODO , Kentaro SUGAYA , Yoshikazu HIURA , Takahiro FUJIE
Abstract: A display device with high display quality is provided. A first film is formed over a first pixel electrode; a first mask film is formed over the first film and a first conductive layer; the first film and the first mask film are processed to form a first layer and a first mask layer over the first pixel electrode and a second mask layer over the first conductive layer; a first insulating film is formed over the first mask layer and the second mask layer; a second insulating film is formed over the first insulating film with use of a photosensitive resin composite; a portion of the second insulating film that overlaps with the second mask layer is removed and a portion of the second insulating film that overlaps with the first mask layer is further removed; after performing heat treatment, part of the first mask layer is removed to expose a top surface of the first layer; and a common electrode is formed to cover the first layer, the first conductive layer, and the second insulating layer.
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公开(公告)号：US20250008781A1
公开(公告)日：2025-01-02
申请号：US18707755
申请日：2022-10-31
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shinya SASAGAWA , Ryota HODO , Kentaro SUGAYA , Yuichi YANAGISAWA
IPC: H10K59/122
Abstract: A high-resolution display apparatus is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, a first sidewall insulating layer, a second sidewall insulating layer, an insulating layer, a first coloring layer, and a second coloring layer. The first light-emitting device includes a first pixel electrode, a first EL layer, and a common electrode. The second light-emitting device includes a second pixel electrode, a second EL layer, and the common electrode. The first EL layer and the second EL layer emit white light. The first sidewall insulating layer is in contact with the side surface of the first pixel electrode. The second sidewall insulating layer is in contact with the side surface of the second pixel electrode. The insulating layer covers the side surface and part of the top surface of the first EL layer and the side surface and part of the top surface of the second EL layer. The first coloring layer overlaps with the first light-emitting device. The second coloring layer overlaps with the second light-emitting device. The first coloring layer and the second coloring layer have functions of transmitting light of different colors.
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95.发明申请公开(公告)号：US20240389393A1
公开(公告)日：2024-11-21
申请号：US18292983
申请日：2022-07-22
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Shinya SASAGAWA , Ryota HODO , Kentaro SUGAYA , Yoshikazu HIURA , Takahiro FUJIE , Yasuhiro JINBO
Abstract: A display device with high display quality is provided. The display device includes a plurality of light-emitting devices each including a pixel electrode, a light-emitting layer, a functional layer, a common layer, and a common electrode in this order and includes an insulating layer positioned between side surfaces of the light-emitting layers adjacent to each other. The light-emitting layer and the functional layer each having an island shape are provided in each light-emitting device, and the plurality of light-emitting devices share the common layer. The common layer and the common electrode are provided to cover the insulating layer. In a cross-sectional view, an end portion of the insulating layer has a tapered shape with a taper angle greater than 0° and less than 90°. The plurality of light-emitting devices each contain a first light-emitting material emitting blue light and a second light-emitting material emitting light having a longer wavelength than blue. A coloring layer is provided to overlap with each of the plurality of light-emitting devices.
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Patent Agency Ranking
96.发明公开公开(公告)号：US20240074240A1
公开(公告)日：2024-02-29
申请号：US18273082
申请日：2022-01-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Ryota HODO , Shinya SASAGAWA , Yoshikazu HIURA , Takahiro FUJIE , Shunpei YAMAZAKI
IPC: H10K59/122 , H10K59/12
CPC classification number: H10K59/122 , H10K59/1201
Abstract: A high-resolution or high-definition display device is provided. The display device is manufactured by forming a conductive film, a first layer, and a first sacrificial layer; processing the first layer and the first sacrificial layer to expose part of the conductive film; forming a second layer over the first sacrificial layer and the conductive film; forming a second sacrificial layer; processing the second layer and the second sacrificial layer to expose part of the conductive film; processing the conductive film to form a first pixel electrode overlapping with the first sacrificial layer and a second pixel electrode overlapping with the second sacrificial layer; forming an insulating film covering at least side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer, side and top surfaces of the first sacrificial layer, and side and top surfaces of the second sacrificial layer; processing the insulating film to form a sidewall covering at least the side surfaces of the first pixel electrode, the second pixel electrode, the first layer, and the second layer; removing the first sacrificial layer and the second sacrificial layer; and forming a common electrode over the first layer and the second layer.
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公开(公告)号：US20240049562A1
公开(公告)日：2024-02-08
申请号：US18257617
申请日：2021-12-06
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yuichi YANAGISAWA , Shinya SASAGAWA , Takashi HAMADA
CPC classification number: H10K59/80518 , H10K59/1201 , H10K59/80517 , H10K59/35
Abstract: A display device with high resolution is provided. The display device includes a first conductor, a first insulator over the first conductor, a second conductor provided inside an opening of the first insulator, a first light-emitting layer in contact with a top surface of the second conductor and a top surface of the first insulator, and a third conductor in contact with a top surface of the first light-emitting layer.
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公开(公告)号：US20230262952A1
公开(公告)日：2023-08-17
申请号：US18015118
申请日：2021-08-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Motomu KURATA , Tsutomu MURAKAWA , Ryo ARASAWA , Kunihiro FUKUSHIMA , Yasumasa YAMANE , Shinya SASAGAWA
IPC: H10B12/00
CPC classification number: H10B12/01
Abstract: A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.
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公开(公告)号：US20220416061A1
公开(公告)日：2022-12-29
申请号：US17902224
申请日：2022-09-02
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Hideomi SUZAWA , Shinya SASAGAWA , Motomu KURATA , Masashi TSUBUKU
IPC: H01L29/66 , H01L27/12 , H01L27/146 , H01L21/02 , H01L29/786
Abstract: The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided. A highly reliable semiconductor device showing stable electric characteristics is made. The semiconductor device includes a transistor including a first oxide layer; an oxide semiconductor layer over the first oxide layer; a source electrode layer and a drain electrode layer in contact with the oxide semiconductor layer; a second oxide layer over the oxide semiconductor layer; a gate insulating layer over the second oxide layer; and a gate electrode layer over the gate insulating layer. An end portion of the second oxide layer and an end portion of the gate insulating layer overlap with the source electrode layer and the drain electrode layer.
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公开(公告)号：US20220271168A1
公开(公告)日：2022-08-25
申请号：US17628296
申请日：2020-07-13
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Shunpei YAMAZAKI , Shinya SASAGAWA , Ryota HODO , Takashi HIROSE , Yoshihiro KOMATSU , Katsuaki TOCHIBAYASHI , Kentaro SUGAYA
IPC: H01L29/786 , H01L29/66 , H01L29/423
Abstract: A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.
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