公开(公告)号：US20230200198A1

公开(公告)日：2023-06-22

申请号：US18079994

申请日：2022-12-13

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Sachiko KAWAKAMI ,  Nobuharu OHSAWA ,  Yuji IWAKI ,  Ryota HODO ,  Kentaro SUGAYA ,  Shinya SASAGAWA ,  Takahiro FUJIE ,  Yoshikazu HIURA ,  Toshiki SASAKI ,  Takeyoshi WATABE ,  Kunihiko SUZUKI

IPC分类号： H10K71/00 ,  H10K85/60

CPC分类号： H01L51/56 ,  H01L51/0072 ,  H01L51/5092

摘要： To provide a light-emitting element in which an organic compound layer can be processed at once by a photolithography technique. A first electrode and an organic compound layer including an electron-injection layer are formed over an insulating surface. The electron-injection layer is the outermost layer of the organic compound layer and contains an organic compound having a basic skeleton and an acid dissociation constant pKa of greater than or equal to 1. A sacrificial layer and a mask are formed over the electron-injection layer and the sacrificial layer is processed into an island shape using the mask. With use of the island-shaped sacrificial layer as a mask, the organic compound layer is processed into an island shape to cover the first electrode. Part of the island-shaped sacrificial layer is removed with an acidic chemical solution to expose the electron-injection layer. A second electrode is formed to cover the electron-injection layer.

公开(公告)号：US20230047805A1

公开(公告)日：2023-02-16

申请号：US17791968

申请日：2021-01-07

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC分类号： H01L27/108 ,  H01L27/12 ,  H01L29/786 ,  H01L29/66

摘要： A semiconductor device with a high on-state current is provided. An oxide semiconductor film; a source electrode and a drain electrode over the oxide semiconductor film; an interlayer insulating film positioned to cover the oxide semiconductor film, the source electrode, and the drain electrode; a gate insulating film over the oxide semiconductor film; a barrier insulating film over the oxide semiconductor film; and a gate electrode over the gate insulating film are included. The barrier insulating film is positioned between the source electrode and the gate insulating film and between the drain electrode and the gate electrode. An opening is formed in the interlayer insulating film so as to overlap with a region between the source electrode and the drain electrode. The barrier insulating film, the gate insulating film, and the gate electrode are positioned in the opening of the interlayer insulating film. Above the barrier insulating film, the gate insulating film is in contact with the interlayer insulating film.

公开(公告)号：US20220271168A1

公开(公告)日：2022-08-25

申请号：US17628296

申请日：2020-07-13

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Takashi HIROSE ,  Yoshihiro KOMATSU ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L29/423

摘要： A semiconductor device with a small variation in transistor characteristics is provided. The semiconductor device includes an oxide semiconductor, a first conductor and a second conductor over the oxide semiconductor, a first insulator in contact with a top surface of the first conductor, a second insulator in contact with a top surface of the second conductor, a third insulator which is positioned over the first insulator and the second insulator and has an opening overlapping with a region between the first conductor and the second conductor, a fourth insulator positioned over the oxide semiconductor and in the region between the first conductor and the second conductor, and a third conductor over the fourth insulator. Each of the first insulator and the second insulator is a metal oxide including an amorphous structure.

公开(公告)号：US20240292669A1

公开(公告)日：2024-08-29

申请号：US18569769

申请日：2022-06-17

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC分类号： H10K59/122 ,  H10K59/12

CPC分类号： H10K59/122 ,  H10K59/1201

摘要： A display apparatus having high display quality is provided. The display apparatus includes a first pixel, a second pixel, a first insulating layer, and a second insulating layer over the first insulating layer; the first pixel includes a first pixel electrode, a first EL layer covering the first pixel electrode, a third insulating layer over the first EL layer, and a common electrode over the first EL layer and the third insulating layer; the second pixel includes a second pixel electrode, a second EL layer covering the second pixel electrode, a fourth insulating layer over the second EL layer, and the common electrode over the second EL layer and the fourth insulating layer; the first insulating layer and the third insulating layer each include a first protruding portion over the first pixel electrode; the first protruding portion is positioned outward from an end portion of the second insulating layer; the first insulating layer and the fourth insulating layer each include a second protruding portion over the second pixel electrode; the second protruding portion is positioned outward from an end portion of the second insulating layer; a side surface of the first protruding portion and a side surface of the second protruding portion each have a tapered shape in a cross-sectional view of the display apparatus.

公开(公告)号：US20240154039A1

公开(公告)日：2024-05-09

申请号：US18403791

申请日：2024-01-04

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO ,  Kentaro SUGAYA ,  Naoto YAMADE

IPC分类号： H01L29/786 ,  H01L29/24 ,  H01L29/66 ,  H10B12/00

CPC分类号： H01L29/7869 ,  H01L29/24 ,  H01L29/66742 ,  H10B12/05 ,  H10B12/31

摘要： A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US20240088232A1

公开(公告)日：2024-03-14

申请号：US18517115

申请日：2023-11-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Kosei NEI ,  Tsutomu MURAKAWA ,  Toshihiko TAKEUCHI ,  Kentaro SUGAYA

IPC分类号： H01L29/24 ,  H01L27/12 ,  H10B12/00

CPC分类号： H01L29/24 ,  H01L27/1225 ,  H10B12/312

摘要： A semiconductor device that can be scaled down or highly integrated is provided. The semiconductor device includes a first layer and a second layer over the first layer. The first layer and the second layer each include a transistor. The transistor in the first layer and the transistor in the second layer each include a first oxide, a first conductor and a second conductor over the first oxide, a first insulator placed to cover the first conductor, the second conductor, and the first oxide, a second insulator over the first insulator, a second oxide placed between the first conductor and the second conductor over the first oxide, a third insulator over the second oxide, a third conductor over the third insulator, and a fourth insulator in contact with a top surface of the second insulator, a top surface of the second oxide, a top surface of the third insulator, and a top surface of the third conductor. The first insulator and the fourth insulator are less likely than the second insulator to allow oxygen to pass through.

公开(公告)号：US20240315084A1

公开(公告)日：2024-09-19

申请号：US18575971

申请日：2022-06-30

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE

IPC分类号： H10K59/122 ,  H10K59/12 ,  H10K59/35

CPC分类号： H10K59/122 ,  H10K59/1201 ,  H10K59/35

摘要： A display apparatus with high display quality is provided. The display apparatus includes a first light-emitting device including a first pixel electrode, a first layer, and a common electrode; a second light-emitting device including a second pixel electrode, a second layer, and the common electrode; a first coloring layer; a second coloring layer transmitting light with a color different from a color of light transmitted by the first coloring layer; a first insulating layer; and a second coloring layer. The first layer and the second layer each contain a first light-emitting material emitting blue light and a second light-emitting material emitting light with a longer wavelength than blue light and are separated from each other. The first insulating layer covers a side surface and part of a top surface of the first layer and a side surface and part of a top surface of the second layer. The second insulating layer overlaps with the side surface and the part of the top surface of the first layer and the side surface and the part of the top surface of the second layer with the first insulating layer therebetween. The common electrode covers the second insulating layer. In a cross-sectional view, an end portion of the second insulating layer has a tapered shape with a taper angle less than 90 degrees.

公开(公告)号：US20240268152A1

公开(公告)日：2024-08-08

申请号：US18290862

申请日：2022-07-22

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Shinya SASAGAWA ,  Ryota HODO ,  Kentaro SUGAYA ,  Yoshikazu HIURA ,  Takahiro FUJIE ,  Yasuhiro JINBO

IPC分类号： H10K59/122 ,  H10K59/12 ,  H10K59/80

CPC分类号： H10K59/122 ,  H10K59/1201 ,  H10K59/80521

摘要： A display device with high display quality is provided. The display device includes a plurality of light-emitting devices each including a pixel electrode, a light-emitting layer, a functional layer, a common layer, and a common electrode in this order and includes an insulating layer positioned between side surfaces of the light-emitting layers adjacent to each other. The light-emitting layer and the functional layer each having an island shape are provided in each light-emitting device, and the plurality of light-emitting devices share the common layer. The common layer and the common electrode are provided to cover the insulating layer. In a cross-sectional view, an end portion of the insulating layer has a tapered shape with a taper angle greater than 0° and less than 90°.

公开(公告)号：US20220271169A1

公开(公告)日：2022-08-25

申请号：US17667655

申请日：2022-02-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Hiroki KOMAGATA ,  Katsuaki TOCHIBAYASHI ,  Kentaro SUGAYA

IPC分类号： H01L29/786

摘要： A semiconductor device having a high on-state current is provided.
The semiconductor device includes a first oxide; a first conductor and a second conductor provided over the first oxide to be separated from each other; and a second oxide provided over the first oxide and between the first conductor and the second conductor. Each of the first oxide and the second oxide has crystallinity, the first oxide includes a region where a c-axis is aligned substantially perpendicularly to a top surface of the first oxide, and the second oxide includes a region where the c-axis is aligned substantially perpendicularly to the top surface of the first oxide, a region where the c-axis is aligned substantially perpendicularly to a side surface of the first conductor, and a region where the c-axis is aligned substantially perpendicularly to a side surface of the second conductor.

公开(公告)号：US20220020881A1

公开(公告)日：2022-01-20

申请号：US17296358

申请日：2019-11-21

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Shunpei YAMAZAKI ,  Kentaro SUGAYA ,  Ryota HODO ,  Kenichiro MAKINO ,  Shuhei NAGATSUKA

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/308 ,  H01L27/12

摘要： A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a plurality of transistors; each of the plurality of transistors includes a first insulator, a first oxide, a second oxide, a first conductor, a second conductor, a third oxide, a second insulator, and a third conductor; the third oxide included in one of the plurality of transistors and the third oxide included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors, are provided to be apart from each other in the channel width direction of the plurality of transistors; the second insulator included in one of the plurality of transistors includes a region continuous with the second insulator included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors; and the third conductor included in one of the plurality of transistors includes a region continuous with the third conductor included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors.