公开(公告)号：US20240092655A1

公开(公告)日：2024-03-21

申请号：US18263740

申请日：2022-01-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yusuke YOSHITANI ,  Yohei MOMMA ,  Kunihiro FUKUSHIMA ,  Tetsuya KAKEHATA

IPC: C01G51/00

CPC classification number: C01G51/42

Abstract: A novel method for forming a positive electrode active material is provided. In the method for forming a positive electrode active material, a cobalt source and an additive element source are mixed to form an acidic solution; the acidic solution and an alkaline solution are made to react to form a cobalt compound; the cobalt compound and a lithium source are mixed to form a mixture; and the mixture is heated. The additive element source is a compound containing one or more selected from gallium, aluminum, boron, nickel, and indium.

公开(公告)号：US20240379866A1

公开(公告)日：2024-11-14

申请号：US18691097

申请日：2022-09-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Ryota HODO ,  Yasuhiro JINBO ,  Motomu KURATA ,  Shinya SASAGAWA ,  Kunihiro FUKUSHIMA ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a transistor. The transistor includes an oxide, a first conductor and a second conductor that are over the oxide, a first insulator over the first conductor and the second conductor, a second insulator in an opening included in the first insulator, a third insulator over the second insulator, a fourth insulator over the third insulator, and a third conductor over the fourth insulator. The opening includes a region overlapping with the oxide. The third conductor includes a region overlapping with the oxide with the second insulator, the third insulator, and the fourth insulator therebetween. The second insulator is in contact with a top surface of the oxide and a sidewall of the opening. The thickness of the second insulator is smaller than that of the third insulator. The fourth insulator is less permeable to oxygen than the third insulator is. The third conductor has a width greater than or equal to 3 nm and less than or equal to 15 nm in a cross-sectional view of the transistor in the channel length direction.

公开(公告)号：US20220131146A1

公开(公告)日：2022-04-28

申请号：US17506864

申请日：2021-10-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Yohei MOMMA ,  Kunihiro FUKUSHIMA ,  Shunsuke HOSOUMI ,  Kazuki TANEMURA ,  Tetsuya KAKEHATA ,  Shunpei YAMAZAKI ,  Toshikazu OHNO ,  Mayumi MIKAMI ,  Tatsuyoshi TAKAHASHI ,  Kazuya SHIMADA

IPC: H01M4/58 ,  H01M10/0569 ,  H01M4/38 ,  H01M10/052

Abstract: The present invention relates to a secondary battery and an electronic device. The secondary battery includes a positive electrode active material which exhibits a broad peak at around 4.55 V in a dQ/dVvsV curve obtained when the charge depth is increased. The secondary battery includes a positive electrode active material which, even when the charge voltage is greater than or equal to 4.6 V and less than or equal to 4.8 V and the charge depth is greater than or equal to 0.8 and less than 0.9, does not have the H1-3 type structure and can maintain a crystal structure where a shift in CoO2 layers is inhibited. The broad peak at around 4.55 V in the dQ/dVvsV curve indicates that a change in the energy necessary for extraction of lithium at around the voltage is small and a change in the crystal structure is small. Accordingly, the positive electrode active material hardly suffers a shift in CoO2 layers and a volume change and is relatively stable even when the charge depth is large.

公开(公告)号：US20230262952A1

公开(公告)日：2023-08-17

申请号：US18015118

申请日：2021-08-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Motomu KURATA ,  Tsutomu MURAKAWA ,  Ryo ARASAWA ,  Kunihiro FUKUSHIMA ,  Yasumasa YAMANE ,  Shinya SASAGAWA

IPC: H10B12/00

CPC classification number: H10B12/01

Abstract: A semiconductor device with a small variation in transistor characteristics can be provided. A step of forming an opening in a structure body including an oxide semiconductor device to reach the oxide semiconductor device, a step of embedding a first conductor in the opening, a step of forming a second conductor in contact with a top surface of the first conductor, a step of forming a first barrier insulating film by a sputtering method to cover the structure body, the first conductor, and the second conductor, and a step of forming a second barrier insulating film over the first barrier insulating film by an ALD method are included. The first barrier insulating film and the second barrier insulating film each have a function of inhibiting hydrogen diffusion.

公开(公告)号：US20240170667A1

公开(公告)日：2024-05-23

申请号：US18550769

申请日：2022-03-14

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tetsuya KAKEHATA ,  Yohei MOMMA ,  Yumiko YONEDA ,  Kazutaka KURIKI ,  Tatsuyoshi TAKAHASHI ,  Kunihiro FUKUSHIMA

IPC: H01M4/525 ,  B60L50/64 ,  H01M4/02 ,  H01M4/131 ,  H01M50/109

CPC classification number: H01M4/525 ,  H01M4/131 ,  H01M50/109 ,  B60L50/64 ,  H01M2004/028 ,  H01M2220/20

Abstract: A battery in which a decrease in discharge capacity retention rate in charge and discharge cycle tests is inhibited is provided. The battery includes a positive electrode and a negative electrode. The positive electrode is used as a positive electrode of a test battery in which a negative electrode includes a lithium metal. When a test of 50 repetitions of a cycle of charge and discharge in which, after constant current charge is performed at a charge rate of 1 C (1 C=200 mA/g) until a voltage of 4.6 V is reached, constant voltage charge is performed at a voltage of 4.6 V until the charge rate reaches 0.1 C, and constant current discharge is then performed at a discharge rate of 1 C until a voltage of 2.5 V is reached is performed in a 25° C. environment or a 45° C. environment and discharge capacity is measured in each cycle, a discharge capacity value measured in a 50th cycle accounts for higher than or equal to 90% and lower than 100% of a maximum discharge capacity value in all 50 cycles.

公开(公告)号：US20240047691A1

公开(公告)日：2024-02-08

申请号：US18360024

申请日：2023-07-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Jo SAITO ,  Yohei MOMMA ,  Kunihiro FUKUSHIMA ,  Teppei OGUNI

IPC: H01M4/62 ,  H01M4/525 ,  H01M4/1315 ,  H01M4/134

CPC classification number: H01M4/628 ,  H01M4/525 ,  H01M4/1315 ,  H01M4/134 ,  H01M2004/028

Abstract: A secondary battery with little deterioration is provided. A highly reliable secondary battery is provided. A positive electrode active material included in the secondary battery includes a crystal of lithium cobalt oxide. The positive electrode active material includes a first region including a surface parallel to the (00l) plane of the crystal and a second region including a surface parallel to a plane intersecting with the (00l) plane. The positive electrode active material contains magnesium. The first region includes a portion with a magnesium concentration that is higher than or equal to 0.5 atomic % and lower than or equal to 10 atomic %. The second region includes a portion with a magnesium concentration that is higher than the magnesium concentration in the first region and is higher than or equal to 4 atomic % and lower than or equal to 30 atomic %. Furthermore, the second region includes a portion with a fluorine concentration that is higher than a fluorine concentration in the first region and is higher than or equal to 0.5 atomic % and lower than or equal to 10 atomic %.

公开(公告)号：US20220359870A1

公开(公告)日：2022-11-10

申请号：US17734744

申请日：2022-05-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Mayumi MIKAMI ,  Jo SAITO ,  Kazuki TANEMURA ,  Tatsuyoshi TAKAHASHI ,  Yohei MOMMA ,  Kazuya SHIMADA ,  Kunihiro FUKUSHIMA

IPC: H01M4/525

Abstract: A positive electrode active material in which a discharge capacity decrease due to charge and discharge cycles is suppressed and a secondary battery including the positive electrode active material are provided. A positive electrode active material in which a change in a crystal structure, e.g., a shift in CoO2 layers is small between a discharged state and a high-voltage charged state is provided. For example, a positive electrode active material that has a layered rock-salt crystal structure belonging to the space group R-3m in a discharged state and a crystal structure belonging to the space group P2/m in a charged state where x in LixCoO2 is greater than 0.1 and less than or equal to 0.24 is provided. When the positive electrode active material is analyzed by powder X-ray diffraction, a diffraction pattern has at least diffraction peaks at 2θ of 19.47±0.10° and 2θ of 45.62±0.05°.

公开(公告)号：US20210384326A1

公开(公告)日：2021-12-09

申请号：US17285782

申请日：2019-10-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Erika TAKAHASHI ,  Kunihiro FUKUSHIMA ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO

IPC: H01L29/66 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02

Abstract: A semiconductor device with high reliability is provided by the following steps: forming an oxide semiconductor; forming a first insulator in contact with the oxide semiconductor; forming a second insulator over the first insulator, forming a third insulator over the second insulator; forming an opening in the third insulator, the second insulator, and the first insulator, cleaning the inside of the opening; embedding a conductor in the cleaned opening; forming the first insulator to include an excess-oxygen region; forming the second insulator to have a higher barrier property against oxygen, hydrogen, or water than the first insulator, and processing the opening to have a cylindrical shape or an inverted cone shape.