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    Semiconductor nanocrystal particles and devices including the same
    93.
    发明授权
    Semiconductor nanocrystal particles and devices including the same 有权

    公开(公告)号：US12227687B2

    公开(公告)日：2025-02-18

    申请号：US18302341

    申请日：2023-04-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Woo Kim ,  Jin A Kim ,  Tae Hyung Kim ,  Jeong Hee Lee ,  Eun Joo Jang

    IPC: C09K11/88 ,  C09K11/56 ,  H10K50/115

    Abstract: A quantum dot comprising a core comprising a first semiconductor nanocrystal comprising zinc, selenium, and optionally tellurium; and a shell disposed on the core and comprising a second semiconductor nanocrystal having a different composition from the first semiconductor nanocrystal, and comprising zinc and at least one of sulfur and selenium, wherein the shell comprises at least three branches extending from the core, wherein at least one of the branches has a length of greater than or equal to about 2 nm, the quantum dot emits blue light comprising a maximum emission peak at a wavelength of less than or equal to about 470 nm, a full width at half maximum (FWHM) of the maximum emission peak is less than about 35 nm, and the quantum dot does not comprise cadmium.

    Quantum dot light emitting device with electron auxiliary layer and display device including the same
    94.
    发明授权
    Quantum dot light emitting device with electron auxiliary layer and display device including the same 有权

    公开(公告)号：US12193252B2

    公开(公告)日：2025-01-07

    申请号：US18300665

    申请日：2023-04-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Heejae Lee ,  Sung Woo Kim ,  Eun Joo Jang ,  Dae Young Chung ,  Moon Gyu Han

    IPC: H10K50/16 ,  H10K50/115 ,  H10K50/15 ,  H10K50/17

    Abstract: A light emitting device includes: a first electrode and a second electrode with a surface facing the first electrode; an emission layer disposed between the first electrode and the second electrode and including a quantum dot (e.g., a plurality of quantum dots); and an electron auxiliary layer disposed between the emission layer and the second electrode. The electron auxiliary layer includes a first layer including a first metal oxide, and a second layer disposed on the first layer and including a second metal oxide. A roughness of an interface between the second layer and the second electrode is less than about 10 nm as determined by an electron microscopy analysis. An absolute value of a difference between a conduction band edge energy level of the second layer and a work function of the second electrode may be less than or equal to about 0.5 eV, and a conduction band edge energy level of the first layer may be less than the conduction band edge energy level of the second layer.

    Quantum dots and devices including the same
    98.
    发明授权
    Quantum dots and devices including the same 有权

    公开(公告)号：US12146091B2

    公开(公告)日：2024-11-19

    申请号：US18297755

    申请日：2023-04-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sung Woo Kim ,  Eun Joo Jang ,  Hyo Sook Jang ,  Hwea Yoon Kim ,  Yuho Won

    IPC: C09K11/88 ,  B82Y20/00 ,  B82Y40/00 ,  C01B19/00 ,  C09K11/56 ,  C09K11/62 ,  H10K50/115

    Abstract: A quantum dot according to an embodiment includes a core including a first semiconductor nanocrystal including zinc, selenium, and tellurium and a semiconductor nanocrystal shell on the core, the semiconductor nanocrystal shell including a zinc chalcogenide, wherein the quantum dot does not include cadmium, the zinc chalcogenide includes zinc and selenium, the quantum dot further includes gallium and a primary amine having 5 or more carbon atoms, and the quantum dot is configured to emit light having a maximum emission peak in a range of greater than about 450 nanometers (nm) and less than or equal to about 480 nm by excitation light. A method of producing the quantum dot and an electronic device including the same are also disclosed.

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