公开(公告)号：US20100013061A1

公开(公告)日：2010-01-21

申请号：US12565557

申请日：2009-09-23

申请人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

发明人： Whonchee Lee ,  Janos Fucsko ,  David H. Wells

IPC分类号： H01L29/06

CPC分类号： H01L21/30608 ,  B81B2203/033 ,  B81B2203/0338 ,  B81C1/00626 ,  C30B29/06 ,  C30B33/10

摘要： A single crystal silicon etching method includes providing a single crystal silicon substrate having at least one trench therein. The substrate is exposed to a buffered fluoride etch solution which undercuts the silicon to provide lateral shelves when patterned in the direction. The resulting structure includes an undercut feature when patterned in the direction.

摘要翻译： 单晶硅蚀刻方法包括提供其中具有至少一个沟槽的单晶硅衬底。 将衬底暴露于缓冲的氟化物蚀刻溶液，其在<100>方向图案化时，其将硅切割以提供横向搁板。 当沿<100>方向图案化时，所得结构包括底切特征。

公开(公告)号：US20090239379A1

公开(公告)日：2009-09-24

申请号：US12054077

申请日：2008-03-24

申请人： Wayne Huang ,  Whonchee Lee

发明人： Wayne Huang ,  Whonchee Lee

IPC分类号： H01L21/306

CPC分类号： C25F3/16 ,  B23H5/08 ,  H01L21/32125

摘要： A method of removing a material from a surface includes providing a substrate comprising a material having a surface, contacting the surface with a polishing medium, applying a voltage to the substrate to remove material from the surface, and changing the voltage during the removing material from the surface. An electrochemical mechanical polishing method includes providing a substrate having a surface, applying a platen to the surface, applying a first voltage to the substrate, rotating the platen and surface relative to each other at a first rotational speed, increasing to a second voltage, and decreasing to a second rotational speed.

摘要翻译： 从表面去除材料的方法包括提供包括具有表面的材料的基板，使表面与抛光介质接触，向基板施加电压以从表面去除材料，以及将去除材料期间的电压从 表面。 电化学机械抛光方法包括提供具有表面的基板，向表面施加压板，向基板施加第一电压，以第一转速相对于彼此旋转压板和表面，增加到第二电压;以及 减小到第二转速。

公开(公告)号：US20080233759A1

公开(公告)日：2008-09-25

申请号：US12113825

申请日：2008-05-01

申请人： Whonchee Lee ,  Kevin J. Torek

发明人： Whonchee Lee ,  Kevin J. Torek

IPC分类号： H01L21/302

CPC分类号： C03C15/00 ,  H01L21/31111

摘要： Methods of selectively etching BPSG over TEOS are disclosed. In one embodiment, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. An etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etchant may be utilized to etch the TEOS layer. The second etchant may be less aggressive and, thus, not damage the components underlying the TEOS layer.

摘要翻译： 公开了通过TEOS选择性蚀刻BPSG的方法。 在一个实施例中，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷污染半导体器件中的其它部件。 本发明的蚀刻剂可以用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。 可以使用第二蚀刻剂来蚀刻TEOS层。 第二种蚀刻剂可能较不具有侵蚀性，因此不会损害TEOS层下面的组分。

公开(公告)号：US07378353B2

公开(公告)日：2008-05-27

申请号：US11321111

申请日：2005-12-29

申请人： Whonchee Lee ,  Kevin J. Torek

发明人： Whonchee Lee ,  Kevin J. Torek

IPC分类号： H01I21/302

CPC分类号： C03C15/00 ,  H01L21/31111

摘要： An organic acid/fluoride-containing solution etchant having high selectivity for BPSG to TEOS. In an exemplary situation, a TEOS layer may be used to prevent contamination of other components in a semiconductor device by the boron and phosphorous in a layer of BPSG deposited over the TEOS layer. The etchant of the present invention may be used to etch desired areas in the BPSG layer, wherein the high selectivity for BPSG to TEOS of etchant would result in the TEOS layer acting as an etch stop. A second etch with a known etchant may be utilized to etch the TEOS layer. The known etchant for the second etch can be less aggressive and, thus, not damage the components underlying the TEOS layer.

摘要翻译： 具有对BOSG对TEOS具有高选择性的有机含酸/氟化物溶液蚀刻剂。 在示例性情况下，可以使用TEOS层来防止在沉积在TEOS层上的BPSG层中的硼和磷对半导体器件中的其它部件的污染。 本发明的蚀刻剂可用于蚀刻BPSG层中的所需区域，其中对于蚀刻剂的BPSG至TEOS的高选择性将导致TEOS层用作蚀刻停止层。 可以使用具有已知蚀刻剂的第二蚀刻来蚀刻TEOS层。 用于第二蚀刻的已知蚀刻剂可以较不具有侵蚀性，因此不会损坏TEOS层下面的部件。

公开(公告)号：US20070111641A1

公开(公告)日：2007-05-17

申请号：US11616683

申请日：2006-12-27

申请人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

发明人： Whonchee Lee ,  Scott Moore ,  Scott Meikle

IPC分类号： B24B7/30 ,  B24B51/00

CPC分类号： B23H5/08 ,  B24B37/042 ,  C25F3/02 ,  C25F7/00

摘要： Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

摘要翻译： 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间，并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

公开(公告)号：US20070000786A1

公开(公告)日：2007-01-04

申请号：US11516065

申请日：2006-09-06

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D5/02

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： A method of selectively depositing metal features on a conductive surface of a substrate. An electrode assembly that includes a plurality of electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the conductive surface of the substrate. The plurality of electrodes is in close proximity to, but does not contact, the conductive surface of the substrate. Positively charged portions and negatively charged portions of the conductive surface of the substrate are created and metal ions are deposited on the negatively charged portions.

摘要翻译： 一种在衬底的导电表面上选择性地沉积金属特征的方法。 电极组件包括多个电极，其串联连接以便当在其上施加电压时被相反地极化，所述电极组件位于衬底的导电表面上方。 多个电极与衬底的导电表面紧密接近但不接触。 产生基板的导电表面的正电荷部分和带负电荷的部分，并且在带负电的部分上沉积金属离子。

公开(公告)号：US07138072B2

公开(公告)日：2006-11-21

申请号：US10155659

申请日：2002-05-24

申请人： Gundu M. Sabde ,  Whonchee Lee

发明人： Gundu M. Sabde ,  Whonchee Lee

IPC分类号： C09K13/00

CPC分类号： B24B37/245 ,  B24B21/04 ,  B24B37/26 ,  B24D2203/00

摘要： Methods and apparatuses for planarizing microelectronic substrate assemblies on fixed-abrasive polishing pads with non-abrasive lubricating planarizing solutions. One aspect of the invention is to deposit a lubricating planarizing solution without abrasive particles onto a fixed-abrasive polishing pad having a body, a planarizing surface on the body, and a plurality of abrasive particles fixedly attached to the body at the planarizing surface. The front face of a substrate assembly is pressed against the lubricating planarizing solution and at least a portion of the fixed abrasive particles on the planarizing surface of the polishing pad. At least one of the polishing pad or the substrate assembly is then moved with respect to the other to impart relative motion therebetween. As the substrate assembly moves relative to the polishing pad, regions of the front face are separated from the abrasive particles in the polishing pad by a lubricant-additive in the lubricating planarizing solution.

公开(公告)号：US20060234604A1

公开(公告)日：2006-10-19

申请号：US11451723

申请日：2006-06-12

申请人： Whonchee Lee ,  Scott Meikle ,  Scott Moore ,  Trung Doan

发明人： Whonchee Lee ,  Scott Meikle ,  Scott Moore ,  Trung Doan

IPC分类号： B24B1/00

CPC分类号： C25F7/00 ,  B23H5/08 ,  B24B37/042 ,  B24B37/046 ,  B24B37/20 ,  H01L21/32125

摘要： A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad, electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential, and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate and disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid. The method can further include removing the portion of conductive material from the microelectronic substrate by moving at least one of the microelectronic and the polishing pad relative to the other. Accordingly, metals such as platinum can be anisotropically removed from the microelectronic substrate. The characteristics of the metal removal can be controlled by controlling the characteristics of the electrical signal applied to the microelectronic substrate, and the characteristics of a liquid disposed between the microelectronic substrate and the polishing pad.

公开(公告)号：US20060042953A1

公开(公告)日：2006-03-02

申请号：US10933823

申请日：2004-09-02

申请人： Suresh Ramarajan ,  Whonchee Lee

发明人： Suresh Ramarajan ,  Whonchee Lee

IPC分类号： C25D5/02

CPC分类号： C25D17/002 ,  C25D5/18 ,  C25D7/123 ,  C25D17/001 ,  C25D17/10 ,  C25D17/12 ,  H01L21/2885

摘要： A method of selectively electroplating metal features on a semiconductor substrate having a conductive surface. An electrode assembly that includes a plurality of adjacent, mutually spaced and electrically isolated electrodes connected in series so as to be oppositely polarized when a voltage is applied thereacross is positioned over the substrate and an electrolyte solution is applied to the conductive surface. The electrode assembly and the conductive surface may be positioned in close proximity to, but without contacting, one another. A voltage is applied to the electrode assembly, which causes a metal film to selectively form on portions of the conductive surface that are positioned beneath an electrode exhibiting a positive polarity and, thus, negatively charged. Portions of the conductive surface positioned beneath electrodes exhibiting a negative polarity remain unplated. A DC power supply may be employed, the electrode polarity in such case being fixed or, alternatively, an AC power supply may be employed so as to cyclically vary electrode polarity and cause metal deposition beneath each electrode. An electroplating system is also disclosed.

摘要翻译： 一种在具有导电表面的半导体衬底上选择性地电镀金属特征的方法。 一种电极组件，其包括多个相邻的，相互间隔的和电隔离的电极，其串联连接，以便在其上施加电压时相反地极化，并且电解质溶液被施加到导电表面上。 电极组件和导电表面可以彼此靠近但不接触地定位。 电压被施加到电极组件，这导致金属膜选择性地形成在导电表面的位于显示正极性的电极下方并因此带负电的部分上。 位于显示负极性的电极下方的导电表面的部分保持未镀层。 可以使用直流电源，在这种情况下，电极极性是固定的，或者可以采用交流电源，以循环地改变电极极性，并在每个电极下方引起金属沉积。 还公开了电镀系统。

公开(公告)号：US20050196963A1

公开(公告)日：2005-09-08

申请号：US10783763

申请日：2004-02-20

申请人： Whonchee Lee

发明人： Whonchee Lee

IPC分类号： B23H5/08 ,  B24B37/04 ,  C25D5/22 ,  H01L21/288 ,  H01L21/768 ,  B44C1/22 ,  C23F1/00 ,  H01L21/306

CPC分类号： B24B37/042 ,  B24B37/046 ,  B24B37/26

摘要： Methods and apparatuses for removing material from a microfeature workpiece are disclosed. In one embodiment, the microfeature workpiece is contacted with a polishing surface of a polishing medium, and is placed in electrical communication with first and second electrodes, at least one of which is spaced apart from the workpiece. A polishing liquid is disposed between the polishing surface and the workpiece and at least one of the workpiece and the polishing surface is moved relative to the other. Material is removed from the microfeature workpiece and at least a portion of the polishing liquid is passed through at least one recess in the polishing surface so that a gap in the polishing liquid is located between the microfeature workpiece and the surface of the recess facing toward the microfeature workpiece.

摘要翻译： 公开了从微特征工件去除材料的方法和装置。 在一个实施例中，微特征工件与抛光介质的抛光表面接触，并且与第一和第二电极电连通，其中至少一个与工件间隔开。 抛光液体设置在抛光表面和工件之间，并且工件和抛光表面中的至少一个相对于另一工件移动。 材料从微特征工件移除，并且抛光液体的至少一部分通过抛光表面中的至少一个凹部，使得抛光液体中的间隙位于微特征工件和面向凹部的凹部的表面之间 微特工件。