Methods and apparatus for electrically detecting characteristics of a microelectronic substrate and/or polishing medium

    公开(公告)号:US20060249397A1

    公开(公告)日:2006-11-09

    申请号:US11482586

    申请日:2006-07-06

    IPC分类号: B23H7/14

    CPC分类号: C25F7/00 B23H5/08 C25F3/14

    摘要: Methods and apparatuses for detecting characteristics of a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from the first and second spaced apart electrodes, contacting the microelectronic substrate with a polishing surface of a polishing medium, removing conductive material from the microelectronic substrate by moving the substrate and/or the electrodes relative to each other while passing a variable electrical signal through the electrodes and the substrate, and detecting a change in the variable electrical signal or a supplemental electrical signal passing through the microelectronic substrate. The rate at which material is removed from the microelectronic substrate can be changed based at least in part on the change in the electrical signal.

    Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate
    2.
    发明申请
    Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate 审中-公开
    从微电子衬底电气和/或化学机械去除导电材料的方法和装置

    公开(公告)号:US20050034999A1

    公开(公告)日:2005-02-17

    申请号:US10926202

    申请日:2004-08-24

    CPC分类号: B23H5/08 B24B1/002

    摘要: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

    摘要翻译: 一种用于从微电子衬底去除导电材料的方法和装置。 在一个实施例中,支撑构件相对于材料去除介质支撑微电子衬底,其可以包括第一和第二电极以及抛光垫。 一个或多个电解质设置在电极和微电子衬底之间以将电极电连接到微电子衬底。 然后将电极耦合到电流从基板电除去导电材料的变化的电流源。 微电子衬底和/或电极可以相对于彼此移动以相对于微电子衬底的选定部分定位电极,和/或抛光微电子衬底。 材料去除介质可以从微电子衬底和/或电极去除在该过程期间形成的气体。 介质还可以具有不同的第一和第二电特性,以提供与微电子衬底的不同区域的不同水平的电耦合。

    METHODS AND APPARATUS FOR ELECTROMECHANICALLY AND/OR ELECTROCHEMICALLY-MECHANICALLY REMOVING CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE
    3.
    发明申请
    METHODS AND APPARATUS FOR ELECTROMECHANICALLY AND/OR ELECTROCHEMICALLY-MECHANICALLY REMOVING CONDUCTIVE MATERIAL FROM A MICROELECTRONIC SUBSTRATE 失效
    用于电化学和/或电化学机械地从微电子基板去除导电材料的方法和装置

    公开(公告)号:US20070111641A1

    公开(公告)日:2007-05-17

    申请号:US11616683

    申请日:2006-12-27

    IPC分类号: B24B7/30 B24B51/00

    摘要: Methods and apparatuses for electromechanically and/or electrochemically-mechanically removing conductive material from a microelectronic substrate. An apparatus in accordance with one embodiment includes a support member configured to releasably carry a microelectronic substrate and first and second electrodes spaced apart from each other and from the microelectronic substrate. A polishing medium is positioned between the electrodes and the support member and has a polishing surface positioned to contact the microelectronic substrate. At least a portion of the first and second electrodes can be recessed from the polishing surface. A liquid, such as an electrolytic liquid, can be provided in the recess, for example, through flow passages in the electrodes and/or the polishing medium. A variable electrical signal is passed from at least one of the electrodes, through the electrolyte and to the microelectronic substrate to remove material from the substrate.

    摘要翻译: 从微电子衬底机电和/或电化学机械去除导电材料的方法和装置。 根据一个实施例的装置包括被配置为可释放地携带微电子衬底和彼此间隔开的微电子衬底的第一和第二电极的支撑构件。 抛光介质位于电极和支撑构件之间,并且具有定位成接触微电子衬底的抛光表面。 第一和第二电极的至少一部分可以从抛光表面凹陷。 诸如电解液体的液体可以例如通过电极和/或抛光介质中的流动通道设置在凹部中。 可变电信号从至少一个电极通过电解质并传递到微电子衬底以从衬底去除材料。

    Methods and apparatus for electrical, mechanical and/or chemical removal of conductive material from a microelectronic substrate

    公开(公告)号:US20060234604A1

    公开(公告)日:2006-10-19

    申请号:US11451723

    申请日:2006-06-12

    IPC分类号: B24B1/00

    摘要: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, the method can include engaging a microelectronic substrate with a polishing surface of a polishing pad, electrically coupling a conductive material of the microelectronic substrate to a source of electrical potential, and oxidizing at least a portion of the conductive material by passing an electrical current through the conductive material from the source of electrical potential. For example, the method can include positioning first and second electrodes apart from a face surface of the microelectronic substrate and disposing an electrolytic fluid between the face surface and the electrodes with the electrodes in fluid communication with the electrolytic fluid. The method can further include removing the portion of conductive material from the microelectronic substrate by moving at least one of the microelectronic and the polishing pad relative to the other. Accordingly, metals such as platinum can be anisotropically removed from the microelectronic substrate. The characteristics of the metal removal can be controlled by controlling the characteristics of the electrical signal applied to the microelectronic substrate, and the characteristics of a liquid disposed between the microelectronic substrate and the polishing pad.

    Methods and apparatus for electrically and/or chemically-mechanically removing conductive material from a microelectronic substrate

    公开(公告)号:US20050035000A1

    公开(公告)日:2005-02-17

    申请号:US10928022

    申请日:2004-08-27

    CPC分类号: B23H5/08 B24B1/002

    摘要: A method and apparatus for removing conductive material from a microelectronic substrate. In one embodiment, a support member supports a microelectronic substrate relative to a material removal medium, which can include first and second electrodes and a polishing pad. One or more electrolytes are disposed between the electrodes and the microelectronic substrate to electrically link the electrodes to the microelectronic substrate. The electrodes are then coupled to a source of varying current that electrically removes the conductive material from the substrate. The microelectronic substrate and/or the electrodes can be moved relative to each other to position the electrodes relative to a selected portion of the microelectronic substrate, and/or to polish the microelectronic substrate. The material removal medium can remove gas formed during the process from the microelectronic substrate and/or the electrodes. The medium can also have different first and second electrical characteristics to provide different levels of electrical coupling to different regions of the microelectronic substrate.

    Methods and apparatus for selectively removing conductive material from a microelectronic substrate
    6.
    发明申请
    Methods and apparatus for selectively removing conductive material from a microelectronic substrate 失效
    用于从微电子衬底选择性去除导电材料的方法和装置

    公开(公告)号:US20070037490A1

    公开(公告)日:2007-02-15

    申请号:US11585740

    申请日:2006-10-23

    IPC分类号: B24B1/00

    摘要: Methods and apparatuses for selectively removing conductive materials from a microelectronic substrate. A method in accordance with an embodiment of the invention includes positioning the microelectronic substrate proximate to and spaced apart from an electrode pair that includes a first electrode and a second electrode spaced apart from the first electrode. An electrolytic liquid can be directed through a first flow passage to an interface region between the microelectronic substrate and the electrode pair. A varying electrical signal can be passed through the electrode pair and the electrolytic liquid to remove conductive material from the microelectronic substrate. The electrolytic liquid can be removed through a second flow passage proximate to the first flow passage and the electrode pair.

    摘要翻译: 用于从微电子衬底选择性去除导电材料的方法和装置。 根据本发明的实施例的方法包括将微电子基板定位在靠近并与电极对间隔开的位置,电极对包括第一电极和与第一电极间隔开的第二电极。 电解液可以通过第一流动通道引导到微电子衬底和电极对之间的界面区域。 可以将变化的电信号通过电极对和电解液体以从微电子衬底去除导电材料。 可以通过靠近第一流动通道和电极对的第二流动通道去除电解液体。

    Methods and apparatus for removing conductive material from a microelectronic substrate
    7.
    发明申请
    Methods and apparatus for removing conductive material from a microelectronic substrate 失效
    从微电子衬底去除导电材料的方法和装置

    公开(公告)号:US20050056550A1

    公开(公告)日:2005-03-17

    申请号:US10923441

    申请日:2004-08-20

    摘要: A method and apparatus for removing conductive material from a microelectronic substrate is disclosed. One method includes disposing an electrolytic liquid between a conductive material of a substrate and at least one electrode, with the electrolytic liquid having about 80% water or less. The substrate can be contacted with a polishing pad material, and the conductive material can be electrically coupled to a source of varying electrical signals via the electrolytic liquid and the electrode. The method can further include applying a varying electrical signal to the conductive material, moving at least one of the polishing pad material and the substrate relative to the other, and removing at least a portion of the conductive material while the electrolytic liquid is adjacent to the conductive material. By limiting/controlling the amount of water in the electrolytic liquid, an embodiment of the method can remove the conductive material with a reduced downforce.

    摘要翻译: 公开了一种用于从微电子衬底去除导电材料的方法和装置。 一种方法包括在基板的导电材料和至少一个电极之间设置电解液,电解液具有约80%的水或更少的水。 衬底可以与抛光垫材料接触,并且导电材料可以经由电解液和电极电耦合到具有变化的电信号的源。 该方法可以进一步包括向导电材料施加变化的电信号,相对于另一个移动抛光垫材料和衬底中的至少一个,以及在电解液邻近该导电材料的同时移除至少一部分导电材料 导电材料。 通过限制/控制电解液中的水量,该方法的一个实施例可以以降低的下压力去除导电材料。

    Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor
    8.
    发明申请
    Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor 审中-公开
    半导体处理器系统,被配置为提供半导体工件工艺流体的系统,半导体工件加工方法,制备半导体工件工艺流体的方法以及将半导体工件加工流体输送到半导体处理器的方法

    公开(公告)号:US20070015443A1

    公开(公告)日:2007-01-18

    申请号:US11521669

    申请日:2006-09-15

    IPC分类号: B24B49/00 B24B7/30 B24B29/00

    CPC分类号: B24B37/04 B24B49/10 B24B57/02

    摘要: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

    摘要翻译: 提供半导体处理器系统,配置为提供半导体工件工艺流体的系统,半导体工件加工方法,半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统,其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。

    Semiconductor processor control systems
    9.
    发明申请
    Semiconductor processor control systems 审中-公开
    半导体处理器控制系统

    公开(公告)号:US20050185180A1

    公开(公告)日:2005-08-25

    申请号:US11068653

    申请日:2005-02-23

    CPC分类号: B24B37/04 B24B49/10 B24B57/02

    摘要: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

    摘要翻译: 提供半导体处理器系统,配置为提供半导体工件工艺流体的系统,半导体工件加工方法,半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统,其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。

    Methods of preparing semiconductor workpiece process fluid
    10.
    发明申请
    Methods of preparing semiconductor workpiece process fluid 审中-公开
    制备半导体工件工艺流体的方法

    公开(公告)号:US20050153632A1

    公开(公告)日:2005-07-14

    申请号:US11068654

    申请日:2005-02-23

    CPC分类号: B24B37/04 B24B49/10 B24B57/02

    摘要: Semiconductor processor systems, systems configured to provide a semiconductor workpiece process fluid, semiconductor workpiece processing methods, methods of preparing semiconductor workpiece process fluid, and methods of delivering semiconductor workpiece process fluid to a semiconductor processor are provided. One aspect of the invention provides a semiconductor processor system including a process chamber adapted to process at least one semiconductor workpiece using a process fluid; a connection coupled with the process chamber and configured to receive the process fluid; a sensor coupled with the connection and configured to output a signal indicative of the process fluid; and a control system coupled with the sensor and configured to control at least one operation of the semiconductor processor system responsive to the signal.

    摘要翻译: 提供半导体处理器系统,配置为提供半导体工件工艺流体的系统,半导体工件加工方法,半导体工件加工流体的制备方法以及将半导体工件加工流体输送到半导体处理器的方法。 本发明的一个方面提供一种半导体处理器系统,其包括适于使用工艺流体处理至少一个半导体工件的处理室; 连接处理室并被配置为接收处理流体的连接; 耦合所述连接并被配置为输出指示所述过程流体的信号的传感器; 以及与所述传感器耦合并被配置为响应于所述信号来控制所述半导体处理器系统的至少一个操作的控制系统。