Polarizer-equipped optical fiber ferrule, connector and connector adaptor
    92.
    发明授权
    Polarizer-equipped optical fiber ferrule, connector and connector adaptor 失效
    配有偏光镜的光纤套圈,连接器和连接器适配器

    公开(公告)号:US06920255B2

    公开(公告)日:2005-07-19

    申请号:US10344439

    申请日:2001-08-29

    摘要: The present invention provides a polarizer-attached optical fiber ferrule, a polarizer-attached optical fiber connector, and a polarized-attached optical fiber connector adapter for coupling a linear polarizer with one or more optical fibers without employing a lens. The polarizer-attached optical fiber connector 2 is equipped with an optical fiber 10, a ferrule 5 fitted on the periphery of the optical fiber 10 and equipped with a slit 16 reaching the optical fiber 10, and a linear polarizer 18 inserted into the slit 16 so that it crosses the optical fiber 10.

    摘要翻译: 本发明提供了一种偏振器附着的光纤套圈,带偏振器的光纤连接器和用于将线性偏振器与一个或多个光纤耦合而不使用透镜的偏光附接的光纤连接器适配器。 带偏振器的光纤连接器2配备有光纤10,安装在光纤10的周围并配备有到达光纤10的狭缝16的套圈5和插入到狭缝16中的线性偏振器18 使其穿过光纤10。

    Semiconductor integrated circuit equipment with asynchronous operation
    93.
    发明授权
    Semiconductor integrated circuit equipment with asynchronous operation 失效
    具有异步操作的半导体集成电路设备

    公开(公告)号:US06901026B2

    公开(公告)日:2005-05-31

    申请号:US10366418

    申请日:2003-02-14

    摘要: A semiconductor integrated circuit device includes a memory, /CE transition detector, address transition detector, /WE transition detector and controller. The controller includes a timeout circuit. The timeout circuit generates an internal circuit control signal with preset width to control access to the memory based on detection results of the above transition detectors. The operation of the memory is controlled by the timeout circuit at the read time. The operation of the memory is controlled by the timeout circuit when transition of the end of a /WE signal is detected by the /WE transition detector before a timing specified by the timeout circuit at the write time. Further, the operation of the memory is controlled in response to the transition of the /WE signal when the transition of the end of the /WE signal is detected by the /WE transition detector after passage of the above timing.

    摘要翻译: 半导体集成电路器件包括存储器/ CE转换检测器,地址转换检测器,/ WE转换检测器和控制器。 控制器包括一个超时电路。 超时电路根据上述转换检测器的检测结果生成具有预设宽度的内部电路控制信号,以控制对存储器的访问。 存储器的操作由读取时的超时电路控制。 当在写入时间由超时电路指定的定时之前,由/ WE转换检测器检测到/ WE信号的结束的转换时,存储器的操作由超时电路控制。 此外,当在上述定时经过之后,当/ WE信号的结束的转变被/ WE转换检测器检测到时,响应于/ WE信号的转变来控制存储器的操作。

    Fiber collimator array
    94.
    发明授权

    公开(公告)号:US06625350B2

    公开(公告)日:2003-09-23

    申请号:US09767255

    申请日:2001-01-22

    IPC分类号: G02B632

    CPC分类号: G02B6/327

    摘要: An optical fiber collimator array includes an optical fiber array block and a microlens array substrate. The optical fiber array block includes an angled surface and is configured to receive and retain a plurality of individual optical fibers, which carry optical signals. The microlens array substrate includes a plurality of microlenses integrated along a microlens surface and a sloped surface opposite the microlens surface. The microlens surface is coupled to the angled surface such that the optical signals from the individual optical fibers are each collimated by a different one of the integrated microlenses.

    Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair
    95.
    发明授权
    Chain-type ferroelectric random access memory (FRAM) with rewrite transistors coupled between a sense amplifier and a bit line pair 有权
    具有耦合在读出放大器和位线对之间的重写晶体管的链式铁电随机存取存储器(FRAM)

    公开(公告)号:US06552922B2

    公开(公告)日:2003-04-22

    申请号:US10228067

    申请日:2002-08-27

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

    摘要翻译: 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管,并且作为栅极电压的最小值 在板线电压升高和比较放大期间获得的晶体管的晶体管小于作为板线电压下降期间获得的晶体管中的栅极电压的最大值和比较放大的值。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。

    Acid resistant catalyst sheet and process for producing same
    96.
    发明授权
    Acid resistant catalyst sheet and process for producing same 失效
    耐酸催化剂片及其制备方法

    公开(公告)号:US06495489B1

    公开(公告)日:2002-12-17

    申请号:US09627059

    申请日:2000-07-27

    IPC分类号: B01J2300

    摘要: There are provided: (i) an acid resistant catalyst sheet comprising: a catalyst component-containing titania fiber; a glass fiber; and at least one resin selected from the group consisting of an epoxy resin, a phenolic resin, a melamine resin, a furan resin, a polyimide resin, a silicone resin, a fluororesin, a polyphenylene sulfide resin and a polyether ether ketone resin; and (ii) a process for producing an acid resistant catalyst sheet, which comprises the step of making paper from a mixture containing: a catalyst component-containing titania fiber; a glass fiber; and at least one resin selected from the group consisting of an epoxy resin, a phenolic resin, a melamine resin, a furan resin, a polyimide resin, a silicone resin, a fluororesin, a polyphenylene sulfide resin and a polyether ether ketone resin.

    摘要翻译: 提供:(i)耐酸催化剂片,其包含:含催化剂组分的二氧化钛纤维;玻璃纤维; 和选自环氧树脂,酚醛树脂,三聚氰胺树脂,呋喃树脂,聚酰亚胺树脂,硅树脂,氟树脂,聚苯硫醚树脂和聚醚醚酮树脂中的至少一种树脂; 和(ii)生产耐酸催化剂片的方法,其包括由含有催化剂组分的二氧化钛纤维,玻璃纤维, 和选自环氧树脂,酚醛树脂,三聚氰胺树脂,呋喃树脂,聚酰亚胺树脂,硅树脂,氟树脂,聚苯硫醚树脂和聚醚醚酮树脂中的至少一种树脂。

    Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit
    97.
    发明授权
    Chain type ferroelectric memory with isolation transistors coupled between a sense amplifier and an equalization circuit 有权
    链式铁电存储器,其具有耦合在读出放大器和均衡电路之间的隔离晶体管

    公开(公告)号:US06473330B1

    公开(公告)日:2002-10-29

    申请号:US09585081

    申请日:2000-06-01

    IPC分类号: G11C1122

    CPC分类号: G11C11/22

    摘要: A chain type ferroelectric random access memory has a memory cell unit comprising ferroelectric memory cells electrically connected in series to each other, a plate line connected to an electrode of the memory cell unit, a bit line connected to the other electrode of the memory cell unit via a switching transistor, a sense amplifier which amplifies the voltages of this bit line and its complementary bit line, and a transistor inserted between the switching transistor and the sense amplifier, and that a value, being the minimum value of the gate voltage in the transistor obtained during elevation of the plate line voltage and comparative amplification, is smaller than a value, being the maximum value of the gate voltage in the transistor obtained during fall of the plate line voltage and comparative amplification. With these features, decrease in the accumulated charge of polarization in the memory cell is reduced and occurrence of disturb is prevented during read/write operations.

    摘要翻译: 链式铁电随机存取存储器具有包括彼此串联电连接的铁电存储单元的存储单元单元,连接到存储单元单元的电极的板线,连接到存储单元单元的另一个电极的位线 通过开关晶体管,放大该位线及其互补位线的电压的读出放大器以及插在开关晶体管和读出放大器之间的晶体管,并且作为栅极电压的最小值 在板线电压升高和比较放大期间获得的晶体管的晶体管小于作为板线电压下降期间获得的晶体管中的栅极电压的最大值和比较放大的值。 利用这些特征,存储单元中的累积电荷的减小减少,并且在读/写操作期间阻止了干扰的发生。

    Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus
    98.
    发明授权
    Discharge plasma generating method, discharge plasma generating apparatus, semiconductor device fabrication method, and semiconductor device fabrication apparatus 有权
    放电等离子体产生方法,放电等离子体产生装置,半导体器件制造方法和半导体器件制造装置

    公开(公告)号:US06456010B2

    公开(公告)日:2002-09-24

    申请号:US09756651

    申请日:2001-01-10

    IPC分类号: H01J724

    摘要: A discharge plasma generating method includes (a) opposing a discharge electrode having a substantially plane discharge portion to a substrate to be processed in a vacuum reaction vessel such that the discharge electrode and the substrate are substantially parallel to each other, (b) evacuating the vacuum reaction vessel and supplying a process gas to a space between the discharge electrode and the substrate, and (c) applying HF power to the discharge electrode such that an envelope representing the spatial distribution of a HF voltage &phgr; on the discharge electrode in a split second changes in accordance with a function including time as a parameter, thereby generating a discharge plasma of the process gas between the discharge electrode and the substrate, with substantially no standing wave of the HF voltage &phgr; generated on the discharge electrode.

    摘要翻译: 放电等离子体产生方法包括:(a)将具有基本上平面的放电部分的放电电极与真空反应容器中的待处理基板相对,使得放电电极和基板彼此基本平行;(b)将 将真空反应容器供给到放电电极和基板之间的空间,并且(c)向放电电极施加HF功率,使得表示在分离的放电电极上的HF电压phi的空间分布的外壳 根据包括时间的功能作为参数进行第二变化,从而在放电电极和基板之间产生处理气体的放电等离子体,基本上不会在放电电极上产生HF电压phi的驻波。

    Tilt sensor
    100.
    发明授权
    Tilt sensor 失效
    倾斜传感器

    公开(公告)号:US06442855B2

    公开(公告)日:2002-09-03

    申请号:US09790657

    申请日:2001-02-23

    IPC分类号: G01C906

    摘要: A tilt angle sensor is disclosed that is capable of detecting whether a tilt angle of a reference plane exceeds a predetermined value by means of only one threshold value. Although only one threshold value is used, the tilt angle can be measured with respect to either a clockwise or a counterclockwise direction from the untilted state. A pair of differential electrodes electrically independent of each other are formed in a shape symmetric with respect to upper and lower sections of a printed circuit board. A common electrode plate is mounted opposed to the pair of differential electrodes with a predetermined gap therebetween. The pair of differential electrodes and the common electrode is stored in a closed space formed by the printed circuit board and an oil case. A dielectric liquid is filled into the closed space in such a way that the level of the liquid varies according to the tilt of the reference plane. An output signal corresponding to the difference in capacity between two capacitors formed by associated components is produced as a tilt detection output.

    摘要翻译: 公开了一种能够通过仅一个阈值检测参考平面的倾斜角是否超过预定值的倾斜角度传感器。 虽然仅使用一个阈值,但是可以相对于从直到状态的顺时针或逆时针方向测量倾斜角度。 彼此电独立的一对差动电极形成为相对于印刷电路板的上部和下部对称的形状。 公共电极板与一对差动电极相对地安装在其间具有预定的间隙。 一对差动电极和公共电极存储在由印刷电路板和油箱形成的封闭空间中。 电介质液体以这样的方式填充到封闭空间中,使得液体的水平根据参考平面的倾斜而变化。 产生与由相关部件形成的两个电容器之间的电容差对应的输出信号作为倾斜检测输出。