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    MEMORY ELEMENT AND MEMORY APPARATUS
    91.
    发明申请
    MEMORY ELEMENT AND MEMORY APPARATUS 审中-公开

    公开(公告)号：US20160225980A1

    公开(公告)日：2016-08-04

    申请号：US15095553

    申请日：2016-04-11

    Applicant: Sony Corporation

    Inventor： Yutaka Higo ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Tetsuya Asayama ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/10 ,  G11C11/16 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L27/222 ,  H01L27/228 ,  H01L29/82 ,  H01L43/08

    Abstract: A memory element includes a layered structure: a memory layer having a magnetization direction changed depending on information, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, including a first ferromagnetic layer having a magnetization direction that is inclined from a direction perpendicular to a film face, a bonding layer laminated on the first ferromagnetic layer, and a second ferromagnetic layer laminated on the bonding layer and bonded to the first ferromagnetic layer via the bonding layer, having a magnetization direction that is inclined from the direction perpendicular to the film face, a magnetization-fixed layer having a fixed magnetization direction, an intermediate layer that is provided between the memory layer and the magnetization-fixed layer, and is contacted with the first ferromagnetic layer, and a cap layer that is contacted with the second ferromagnetic layer.

    Storage element, storage device, method of manufacturing storage element, and magnetic head
    92.
    发明授权
    Storage element, storage device, method of manufacturing storage element, and magnetic head 有权
    存储元件，存储装置，制造存储元件的方法和磁头

    公开(公告)号：US09397288B2

    公开(公告)日：2016-07-19

    申请号：US14299228

    申请日：2014-06-09

    Applicant: Sony Corporation

    Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida

    IPC: H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/228 ,  H01L43/08

    Abstract: A storage element includes a layer structure, which includes a storage layer including magnetization perpendicular to the film surface, in which the magnetization direction is changed corresponding to information; a magnetization fixing layer including magnetization perpendicular to the film surface that becomes a reference for information stored on the storage layer; a tunnel barrier layer made from an oxide provided between the storage layer and the magnetization fixing layer; and a spin barrier layer made from an oxide provided contacting the surface of the opposite side of the storage layer to the surface contacting the tunnel barrier layer. A low resistance region is formed in a portion of the spin barrier layer formed with a predetermined set film thickness value and information storage on the storage layer is performed by changing the magnetization direction of the storage layer by current flowing in the stacking direction of the layer structure.

    Abstract translation: 存储元件包括层结构，其包括包含垂直于膜表面的磁化的存储层，其中磁化方向根据信息而改变; 磁化固定层，其包括垂直于膜表面的磁化，其成为存储在存储层上的信息的参考; 由设置在所述存储层和所述磁化固定层之间的氧化物制成的隧道势垒层; 以及由与存储层的相反侧的表面接触的氧化物形成的自旋势垒层与与隧道势垒层接触的表面。 在以预定的设定膜厚度值形成的自旋阻挡层的一部分中形成低电阻区域，并且通过在层的层叠方向上流动的电流改变存储层的磁化方向来进行存储层上的信息存储 结构体。

    Memory element and memory device
    94.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09293693B2

    公开(公告)日：2016-03-22

    申请号：US14446685

    申请日：2014-07-30

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: H01L29/82 ,  G11C11/16 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    CPC classification number: H01L43/10 ,  G11C11/16 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08

    Abstract: There is disclosed an information storage element including a first layer including a ferromagnetic layer with a magnetization direction perpendicular to a film face; an insulation layer coupled to the first layer; and a second layer coupled to the insulation layer opposite the first layer, the second layer including a fixed magnetization so as to be capable of serving as a reference of the first layer. The first layer is capable of storing information according to a magnetization state of a magnetic material, and the magnetization state is configured to be changed by a spin injection. A magnitude of an effective diamagnetic field which the first layer receives is smaller than a saturated magnetization amount of the first layer.

    Abstract translation: 公开了一种信息存储元件，包括：第一层，其包括具有垂直于膜面的磁化方向的铁磁层; 耦合到所述第一层的绝缘层; 以及耦合到与所述第一层相对的所述绝缘层的第二层，所述第二层包括固定磁化，以便能够用作所述第一层的参考。 第一层能够根据磁性材料的磁化状态存储信息，并且磁化状态被配置为通过自旋注入而改变。 第一层接收的有效抗磁场的大小小于第一层的饱和磁化量。

    Magnetic memory element and magnetic memory device
    96.
    发明授权
    Magnetic memory element and magnetic memory device 有权
    磁存储元件和磁存储器件

    公开(公告)号：US09196333B2

    公开(公告)日：2015-11-24

    申请号：US14278716

    申请日：2014-05-15

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: G11C11/00 ,  G11C11/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/10 ,  H01L27/22

    CPC classification number: G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: There is disclosed a memory element including a memory layer that has a magnetization and a magnetization direction thereof varies corresponding to information; a magnetization-fixed layer that has a magnetization; and an insulating layer that is provided between the memory layer and the magnetization-fixed layer, wherein an electron that is spin-polarized is injected in a lamination direction of a layered structure, and thereby the magnetization direction of the memory layer varies and a recording of information is performed with respect to the memory layer, and a Ta film in contact with a face of the magnetization-fixed layer, the face of the magnetization-fixed layer is opposite to the insulating layer side.

    Abstract translation: 公开了一种存储元件，其包括存储层，该存储层具有相应于信息的磁化和磁化方向的变化; 具有磁化的磁化固定层; 以及设置在所述存储层和所述磁化固定层之间的绝缘层，其中在层状结构的层叠方向上注入自旋极化的电子，从而存储层的磁化方向变化，并且记录 相对于存储层执行信息，和与磁化固定层的表面接触的Ta膜，磁化固定层的表面与绝缘层侧相反。

    MAGNETORESISTIVE ELEMENT
    98.
    发明申请
    MAGNETORESISTIVE ELEMENT 有权
    磁电元件

    公开(公告)号：US20150221862A1

    公开(公告)日：2015-08-06

    申请号：US14607487

    申请日：2015-01-28

    Applicant: Sony Corporation

    Inventor： Hiroyuki Uchida ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane

    IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02

    CPC classification number: H01L43/02 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10

    Abstract: A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).

    Abstract translation: 磁阻元件包括层叠结构，其包括多个固定层，由非磁性材料形成的中间层和记录层，所述多个固定层经由非磁性层层叠，所述多个固定层具有 至少第一固定层和第二固定层，满足以下公式：S1> S2（其中S1是与中间层相邻的第一固定层的面向中间层的部分的面积，S2是 固定层的除了第一固定层之外的固定层中具有最小面积的区域）。

    Memory element and memory device
    99.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US09099642B2

    公开(公告)日：2015-08-04

    申请号：US14559167

    申请日：2014-12-03

    Applicant: Sony Corporation

    Inventor： Hiroyuki Ohmori ,  Masanori Hosomi ,  Kazuhiro Bessho ,  Yutaka Higo ,  Kazutaka Yamane ,  Hiroyuki Uchida ,  Tetsuya Asayama

    IPC: G11C11/00 ,  H01L43/10 ,  H01L43/02 ,  H01L43/08

    CPC classification number: H01L43/10 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  Y10S977/933 ,  Y10S977/935

    Abstract: Spin transfer torque memory elements and memory devices are provided. In one embodiment, the spin transfer torque memory element includes a first portion including CoFeB, a second portion including CoFeB, an intermediate portion interposed between the first and second portions, a third portion adjoining the second portion opposite the intermediate portion, and a fourth portion adjoining the third portion opposite the second portion. The intermediate portion includes MgO. The third portion includes at least one of Ag, Au, Cr, Cu, Hf, Mo, Nb, Os, Re, Ru, Ta, W, and Zr. The fourth portion includes at least one alloy of Co, Fe, Pd, and Pt.

    Abstract translation: 提供自旋转矩记忆元件和存储器件。 在一个实施例中，自旋转移转矩存储元件包括包括CoFeB的第一部分，包括CoFeB的第二部分，介于第一和第二部分之间的中间部分，邻接与中间部分相对的第二部分的第三部分，以及第四部分 邻接与第二部分相对的第三部分。 中间部分包括MgO。 第三部分包括Ag，Au，Cr，Cu，Hf，Mo，Nb，Os，Re，Ru，Ta，W和Zr中的至少一种。 第四部分包括至少一种Co，Fe，Pd和Pt的合金。

    Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer
    100.
    发明授权
    Memory element and memory apparatus with a plurality of magnetic layers and an oxide layer 有权
    具有多个磁性层和氧化物层的存储元件和存储装置

    公开(公告)号：US09070462B2

    公开(公告)日：2015-06-30

    申请号：US14184955

    申请日：2014-02-20

    Applicant: Sony Corporation

    Inventor： Kazutaka Yamane ,  Masanori Hosomi ,  Hiroyuki Ohmori ,  Kazuhiro Bessho ,  Yutaka Higo ,  Tetsuya Asayama ,  Hiroyuki Uchida

    IPC: G11C11/00 ,  G11C11/16

    CPC classification number: H01L43/08 ,  G11C11/15 ,  G11C11/16 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02

    Abstract: A memory element has a layered structure, including a memory layer that has magnetization perpendicular to a film face in which a magnetization direction is changed depending on information, and includes a Co—Fe—B magnetic layer, the magnetization direction being changed by applying a current in a lamination direction of the layered structure to record the information in the memory layer, a magnetization-fixed layer having magnetization perpendicular to a film face that becomes a base of the information stored in the memory layer, and an intermediate layer that is formed of a non-magnetic material and is provided between the memory layer and the magnetization-fixed layer, a first oxide layer and a second oxide layer.

    Abstract translation: 存储元件具有分层结构，包括具有垂直于磁化方向根据信息而变化的膜面的磁化的存储层，并且包括Co-Fe-B磁性层，通过施加磁化方向来改变磁化方向 分层结构的层叠方向上的电流以将信息记录在存储层中，具有垂直于成为存储在存储层中的信息的基底的膜面的磁化的磁化固定层和形成的中间层 并且设置在存储层和磁化固定层之间，第一氧化物层和第二氧化物层。

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