公开(公告)号：US08203888B2

公开(公告)日：2012-06-19

申请号：US12875794

申请日：2010-09-03

申请人： Koichi Fukuda ,  Makoto Iwai

发明人： Koichi Fukuda ,  Makoto Iwai

IPC分类号： G11C11/34

CPC分类号： G11C16/0483 ,  G11C7/1048 ,  G11C11/5642 ,  G11C16/26

摘要： A non-volatile semiconductor storage device according to one aspect of the present invention includes a plurality of sense amplifier circuit that are configured to carry out a plurality of read cycles on a plurality of bit lines connected to those memory cells that are selected by a selected one of the word lines. During the second and subsequent read cycles, supply of a read current is ceased to those bit lines when it is determined in the preceding read cycle that a current not less than a certain determination current level flows therethrough, and the read current is supplied only to the remaining bit lines. A setup time of the bit lines in the first read cycle is set shorter than a setup time of the bit lines in the second and subsequent read cycles.

摘要翻译： 根据本发明的一个方面的非易失性半导体存储器件包括：多个读出放大器电路，被配置为在连接到被选择的那些存储器单元的多个位线上执行多个读取周期 一条字线。 在第二次和随后的读取周期期间，当在先前的读取周期中确定不小于某一确定电流电流的电流流过其中时，读取电流的供应停止到这些位线，并且仅将读取的电流提供给 剩下的位线。 第一读取周期中的位线的建立时间被设置为比第二和随后读取周期中位线的建立时间短。

公开(公告)号：US20120009412A1

公开(公告)日：2012-01-12

申请号：US13142108

申请日：2009-12-25

申请人： Makoto Iwai ,  Hiroshi Adachi ,  Hideyuki Mori

发明人： Makoto Iwai ,  Hiroshi Adachi ,  Hideyuki Mori

IPC分类号： E04B1/88 ,  B29C39/00 ,  B32B3/26

CPC分类号： C08G77/04 ,  C09D183/04 ,  Y10T428/249953

摘要： A curable organopolysiloxane composition comprising (A) an organopolysiloxane that contains at least two crosslinking reactive groups in each molecule, (B) a crosslinking agent, (C) a crosslinking catalyst, (D) a hollow filler having a true density of 0.001 to 3,000 g/cm3, in an amount that is at least 70 volume % of the total volume of component (A) and the hollow filler, (E) water, at 20 to 1,000 Mass parts per 100 Mass parts component (A), and (F) an emulsifying agent, at 0.01 to 30 mass parts per 100 mass parts component (E).

摘要翻译： 一种可固化的有机基聚硅氧烷组合物，其包含（A）在每个分子中含有至少两个交联反应性基团的有机聚硅氧烷，（B）交联剂，（C）交联催化剂，（D）真空密度为0.001至3,000 （A）和中空填料（E）水的总体积的至少70体积％的量，以每100质量份成分（A）和/ F）乳化剂，每100质量份成分（E）为0.01〜30质量份。

公开(公告)号：US08093323B2

公开(公告)日：2012-01-10

申请号：US12522835

申请日：2008-01-11

申请人： Takeaki Saiki ,  Makoto Iwai ,  Anil Kumar Tomar

发明人： Takeaki Saiki ,  Makoto Iwai ,  Anil Kumar Tomar

IPC分类号： C08K5/24 ,  C08K5/00

CPC分类号： C07F7/188 ,  C07F7/1804

摘要： A method for manufacturing a bis(silatranylalkyl) polysulfide by heating a bis(trialkoxysilylalkyl) polysulfide and triethanolamine in the presence of a catalytic quantity of an alkali-metal alcoholate, thus substituting all Si-bonded alkoxy groups of the bis(trialkoxysilylalkyl) polysulfide with a (OCH2CH2)3N group; a method for the preparation of a mixture of a bis(silatranylalkyl) polysulfide and a (silatranyalkyl)(trialkoxysilyl) disulfide or a mixture of a bis(silatranylalkyl) polysulfide, a (silatranylalkyl)(trialkoxysilyl) disulfide, and a bis(trialkoxysilylalkyl) polysulfide by heating a bis(trialkoxysilylalkyl) polysulfide and triethanolamine in the presence of a catalytic quantity of an alkali-metal alcoholate, thus substituting a part of Si-bonded alkoxy groups of the bis(trialkoxysilylalkyl) polysulfide with a (OCH2CH2)3N group; a mixture of a bis(silatranylalkyl) polysulfide and a (silatranylalkyl)(trialkoxysilyl) disulfide; a mixture of a bis(silatranylalkyl) polysulfide, a (silatranylalkyl)(trialkoxysilyl) disulfide, and a bis(trialkoxysilylalkyl) polysulfide; and a rubber composition containing the aforementioned mixture.

摘要翻译： 在催化量的碱金属醇化物的存在下加热双（三烷氧基甲硅烷基）多硫化物和三乙醇胺，从而将双（三烷氧基甲硅烷基烷基）多硫化物的所有Si键合的烷氧基与 （OCH 2 CH 2）3 N基团; 制备双（硅烷基烷基烷基）多硫化物和（硅烷基烷基）（三烷氧基甲硅烷基）二硫化物的混合物或双（硅烷基烷基烷基）多硫化物，（硅烷基烷基）（三烷氧基甲硅烷基）二硫化物和双（三烷氧基甲硅烷基） 通过在催化量的碱金属醇化物的存在下加热双（三烷氧基甲硅烷基）多硫化物和三乙醇胺，从而用（OCH 2 CH 2）3 N基取代双（三烷氧基甲硅烷基烷基）多硫化物的一部分Si键合的烷氧基， 双（甲硅烷基烷基）多硫化物和（硅烷基烷基烷基）（三烷氧基甲硅烷基）二硫化物的混合物; （硅烷基烷基）多硫化物，（硅烷基烷基）（三烷氧基甲硅烷基）二硫化物和双（三烷氧基甲硅烷基烷基）多硫化物的混合物; 和含有上述混合物的橡胶组合物。

公开(公告)号：US20110310667A1

公开(公告)日：2011-12-22

申请号：US13219980

申请日：2011-08-29

申请人： Makoto Iwai ,  Kazuhisa Kanazawa ,  Hiroshi Nakamura ,  Masaki Fujiu

发明人： Makoto Iwai ,  Kazuhisa Kanazawa ,  Hiroshi Nakamura ,  Masaki Fujiu

IPC分类号： G11C16/04

CPC分类号： G11C16/16 ,  G11C16/0483 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a row decoder including a first block selector and a second block selector each of which includes a plurality of transfer transistors which are formed to correspond to the plurality of blocks and arranged adjacent to each other in a word-line direction wherein the diffusion layers are formed to oppose each other in the first block selector and the second block selector, and a width between the diffusion layers of the first block selector and the second block selector adjacent to each other in the word-line direction is made larger than a width between the diffusion layers in each of the first block selector and the second block selector adjacent to each other in the word-line direction.

摘要翻译： 半导体存储器件包括存储单元阵列，其包括多个块，每个块包括存储单元单元和选择存储单元单元的选择晶体管;以及行解码器，包括第一块选择器和第二块选择器，每个块选择器包括 多个传输晶体管，其被形成为对应于多个块并且在字线方向上彼此相邻布置，其中扩散层在第一块选择器和第二块选择器中形成为彼此相对，并且 使第一块选择器的扩散层与字线方向上彼此相邻的第二块选择器之间的宽度大于与第一块选择器和第二块选择器相邻的第一块选择器和第二块选择器中的每一个中的扩散层之间的宽度 其他在字线方向。

公开(公告)号：US20110286268A1

公开(公告)日：2011-11-24

申请号：US13193968

申请日：2011-07-29

申请人： Makoto Iwai ,  Hiroshi Nakamura

发明人： Makoto Iwai ,  Hiroshi Nakamura

IPC分类号： G11C16/26 ,  G11C16/04

CPC分类号： G11C16/3459 ,  G11C11/56 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/06 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3436 ,  G11C16/3454

摘要： A memory includes first and second select gate transistors, memory cells, a source line, a bit line, a selected word line which is connected to a selected memory cell as a target of a verify reading, a non-selected word line which is connected to a non-selected memory cell except the selected memory cell, a potential generating circuit for generating a selected read potential which is supplied to the selected word line, and generating a non-selected read potential larger than the selected read potential, which is supplied to the non-selected word line, and a control circuit which classifies a threshold voltage of the selected memory cell to one of three groups by verifying which area among three area which are isolated by two values does a cell current of the selected memory cell belong, when the selected read potential is a first value.

摘要翻译： 存储器包括第一和第二选择栅极晶体管，存储器单元，源极线，位线，连接到作为验证读取的目标的所选存储单元的选定字线，连接的未选择字线 到除所选存储单元之外的未选择的存储单元，用于产生提供给所选择的字线的所选择的读取电位并且产生大于所选择的读取电位的未被选择的读取电位的电位产生电路， 以及控制电路，其通过验证被选择的存储器单元的单元电流属于两个值隔离的三个区域中的哪个区域属于三个组中的一个，将选择的存储单元的阈值电压分类为三个组中的一个 当所选择的读取电位为第一值时。

公开(公告)号：US07838671B2

公开(公告)日：2010-11-23

申请号：US11953559

申请日：2007-12-10

申请人： Makoto Iwai ,  Mitsuyoshi Hamada

发明人： Makoto Iwai ,  Mitsuyoshi Hamada

IPC分类号： C07D417/00

CPC分类号： C07F7/1804

摘要： A new nitrogen-containing organosilicon compound contains tertiary amine groups and carbonyl groups wherein the tertiary amine groups are selected from R1R2N— (where R1 and R2 are the same or different univalent hydrocarbon groups of 1-15 carbon atoms), alicyclic amino groups, or heterocyclic amino groups containing in their rings one or more tertiary amine groups.

摘要翻译： 新的含氮有机硅化合物含有叔胺基团和羰基，其中叔胺基团选自R1R2N-（其中R1和R2是相同或不同的1-15个碳原子的一价烃基），脂环族氨基或 在其环中含有一个或多个叔胺基团的杂环氨基。

公开(公告)号：US20100232233A1

公开(公告)日：2010-09-16

申请号：US12721689

申请日：2010-03-11

申请人： Takuya FUTATSUYAMA ,  Makoto Iwai

发明人： Takuya FUTATSUYAMA ,  Makoto Iwai

IPC分类号： G11C16/06 ,  G11C16/04

CPC分类号： G11C16/0483 ,  G11C16/26

摘要： A nonvolatile semiconductor memory device in which a negative-threshold cell read operation is performed by biasing a source line and well line to a positive voltage includes a first drive circuit that sets at least unselected word line in a floating state at a negative-threshold cell read time.

摘要翻译： 通过将源极线和阱线偏置为正电压来进行负阈值电池读取动作的非易失性半导体存储器件包括将第一驱动电路设定为负阈值电池处于浮置状态的至少未选择字线 阅读时间

公开(公告)号：US20090185423A1

公开(公告)日：2009-07-23

申请号：US12329007

申请日：2008-12-05

申请人： Makoto Iwai ,  Kazuhisa Kanazawa ,  Hiroshi Nakamura ,  Masaki Fujiu

发明人： Makoto Iwai ,  Kazuhisa Kanazawa ,  Hiroshi Nakamura ,  Masaki Fujiu

IPC分类号： G11C16/04 ,  G11C8/00

CPC分类号： G11C16/16 ,  G11C16/0483 ,  H01L27/0207 ,  H01L27/105 ,  H01L27/11519 ,  H01L27/11526 ,  H01L27/11529

摘要： A semiconductor memory device includes a memory cell array including a plurality of blocks each including a memory cell unit, and a selection transistor which selects the memory cell unit, and a row decoder including a first block selector and a second block selector each of which includes a plurality of transfer transistors which are formed to correspond to the plurality of blocks and arranged adjacent to each other in a word-line direction wherein the diffusion layers are formed to oppose each other in the first block selector and the second block selector, and a width between the diffusion layers of the first block selector and the second block selector adjacent to each other in the word-line direction is made larger than a width between the diffusion layers in each of the first block selector and the second block selector adjacent to each other in the word-line direction.

摘要翻译： 半导体存储器件包括存储单元阵列，其包括多个块，每个块包括存储单元单元和选择存储单元单元的选择晶体管;以及行解码器，包括第一块选择器和第二块选择器，每个块选择器包括 多个传输晶体管，其被形成为对应于多个块并且在字线方向上彼此相邻布置，其中扩散层在第一块选择器和第二块选择器中形成为彼此相对，并且 使第一块选择器的扩散层与字线方向上彼此相邻的第二块选择器之间的宽度大于与第一块选择器和第二块选择器相邻的第一块选择器和第二块选择器中的每一个中的扩散层之间的宽度 其他在字线方向。

公开(公告)号：US07517557B2

公开(公告)日：2009-04-14

申请号：US10792852

申请日：2004-03-05

申请人： Makoto Iwai ,  Makoto Ohmori ,  Takashi Yoshino ,  Minoru Imaeda

发明人： Makoto Iwai ,  Makoto Ohmori ,  Takashi Yoshino ,  Minoru Imaeda

IPC分类号： C23C16/00 ,  B01F3/02

CPC分类号： C30B25/14 ,  C23C16/40 ,  C30B25/02 ,  C30B29/30

摘要： An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing a first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.

摘要翻译： 本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。 使用具有第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7的成膜体系。通过第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7配置含有第一金属有机化合物的第一原料气体“A” 第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中，并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前，氧气“D”接触第一原料气体“E”。

公开(公告)号：US20090074963A1

公开(公告)日：2009-03-19

申请号：US10792852

申请日：2004-03-05

申请人： Makoto Iwai ,  Makoto Ohmori ,  Takashi Yoshino ,  Minoru Imaeda

发明人： Makoto Iwai ,  Makoto Ohmori ,  Takashi Yoshino ,  Minoru Imaeda

IPC分类号： C23C16/06

CPC分类号： C30B25/14 ,  C23C16/40 ,  C30B25/02 ,  C30B29/30

摘要： An object of the present invention is to produce an oxide film having good surface morphology and crystal quality, by a metal organic chemical vapor deposition using two or more raw material gases of metal organic compounds and oxygen gas. It is used a film forming system having a first supply hole 11A, a second supply hole 11B, a third supply hole 11C and a film forming chamber 7. A first raw material gas “A” containing al first metal organic compound is supplied through the first supply hole 11A into the chamber 7. A second raw material gas “B” containing the second metal organic compound is supplied through the second supply hole 11B into the chamber 7, and oxygen gas “C” is supplied through the third supply hole 11C into the chamber 7. The oxygen gas “D” contacts the first raw material gas “E” before the oxygen gas is mixed with the second raw material gas “F” in the chamber 7.

摘要翻译： 本发明的目的是通过使用两种或更多种金属有机化合物和氧气的原料气体的金属有机化学气相沉积来制造具有良好的表面形态和晶体质量的氧化膜。 使用具有第一供给孔11A，第二供给孔11B，第三供给孔11C和成膜室7的成膜系统。含有第一金属有机化合物的第一原料气体“A”通过 第一供给孔11A插入到室7.包含第二金属有机化合物的第二原料气体“B”通过第二供给孔11B供给到室7中，并且通过第三供给孔11C供给氧气“C” 在氧气与第二原料气体“F”在室7中混合之前，氧气“D”接触第一原料气体“E”。