摘要:
In a memory circuit having a memory device operative to read, write and hold data and an operation unit implementing computation between a first datum supplied externally and a second datum read out of the memory device, a selector for selecting one of operational function specification data preset externally and a selector for selecting one of bit write control data present externally are given with select control signals, so that a frame buffer memory operative in read-modify-write mode can be used commonly.
摘要:
A memory device formed on an IC chip includes dynamic random access memories for effecting data read and write operations, first and second data terminals for receiving data from an external side of the IC chip, and a controller having a first data input connected to the first data terminal to receive first data, a second input connected to receive second data read, a third data input connected to the second data terminal to receive a function mode signal, and operation unit for executing operations between the first data provided from the first data input and the second data provided from the second input. The operation unit includes a function setting unit responsive to the function mode signal for setting a function indicated by the function mode signal prior to receipt of the first data. The second data is read out of a selected part of the storage locations. The operation corresponding to the function set by the function setting unit is executed for the first and second data. The result of the execution is written into the selected part of the storage locations via the input of the dynamic random access memories during one memory cycle.
摘要:
In a connector having a plurality of first contact groups arranged in a predetermined pattern, conductors whose one ends are connected to the first contact groups, and a plurality of second contact groups arranged in a pattern corresponding to the pattern of the first contact groups, the conductors for connecting the first contact groups and the second contact groups cause portions of the first contact groups to be connected to the second contact groups at different positions within the above-described pattern. Accordingly, even when the contacts of the same sort of signal lines having one-to-one correspondence are allocated to the contact conductors located at the same positions within the boards for constituting the respective modules, the one-to-one correspondence can be maintained, and thus the printed-circuit boards of the modules can be commonly utilized.
摘要:
A memory device formed on an IC chip includes dynamic random access memories for effecting data read and write operations, first and second data terminals for receiving data from an external side of the IC chip, and a controller having a first data input connected to the first data terminal to receive first data, a second input connected to receive second data read, a third data input connected to the second data terminal to receive a function mode signal, and operation unit for executing operations between the first data provided from the first data input and the second data provided from the second input. The operation unit includes a function setting unit responsive to the function mode signal for setting a function indicated by the function mode signal prior to receipt of the first data. The second data is read out of a selected part of the storage locations. The operation corresponding to the function set by the function setting unit is executed for the first and second data. The result of the execution is written into the selected part of the storage locations via the input of the dynamic random access memories during one memory cycle.
摘要:
A bit operation processor having a first address operation unit for updating the address of data in units of a byte or multiple bytes for performing operation in units of a byte or multiple bytes. A second address operation unit for updating the address of data in units of a bit or multiple bits, an address controller operating on the first address operation unit to advance the address in response to the result of address advancement by the second address operation unit. Fetching byte-wide data for operation as addressed by the first address operation unit, whereby operation between data of any number of bits at any positions in byte blocks is controlled simply and fast.
摘要:
A bit operation processor having a first address operation unit for updating the address of data in units of byte or multipled bytes for performing operation in units of byte or multiple of bytes, a second address operation unit for updating the address of data in units of bit or multiple of bits, an address control means operating on the first address operation unit to advance the address in response to the result of address advancement by the second address operation unit, and means for fetching byte-wide data for operation as addressed by the first address operation unit, whereby operation between data of any number of bits at any positions in byte blocks is controlled simply and fast.
摘要:
A memory circuit including memory elements on which the data read, write, and store operations can be arbitrarily performed, the memory elements having a dyadic/arithmetic operation function. In a read/modify/write mode to be executed during a memory cycle and in an interval in which data from the memory elements and data from external devices exist, an operation is executed between the external data and the data in the memory elements and the operation result is stored during a write cycle, thereby achieving a higher-speed operation.
摘要:
Two arithmetic logic units (ALUs) are provided, one a high-order side and another on a low-order side such that data on the high-order side and on low-order side, output from each of a source data register and a destination data register, are respectively supplied to the ALUs to be operated on thereby. There is provided a selector circuit on the output side of the source data register, which selector circuit operates to deliver the data on the high-order side and that on the low-order side from the source data register selectively to the ALU on the high-order side and that on the low-order side according to the operating mode. Carry outputs from each of the ALUs are input to a first selector and one is selected according to the operating mode and stored in a carry flag register. The output of the carry flag register and the carry output of the ALU on the low-order side are input to a second selector whereby one output thereof is selected according to the operating mode and input to the ALU on the high-order side as the carry input thereto, and also, the output of the carry flag register is supplied to the ALU on the low-order side as the carry input thereto.
摘要:
A dual-port memory circuit comprises a random port having a memory cell array randomly accessable and a serial port serially readable or writable from/to the memory cell array. In the memory circuit, two modes are provided to the serial port, and when a first mode is designated, the data are consecutively read or written a plurality of bits at a time, and when a second mode is designated, the data are consecutively read or written one bit at a time. High speed read/write operation is attained by designating the mode to allow parallel input/output. For an application which does not require high speed operation, the number of components to be externally added to the memory circuit can be reduced.
摘要:
A specimen supporting member (10) includes: a specimen supporting film (11) such as a silicon nitride film, a carbon film, and a polyimide film; an X-ray radiation film (13) provided on one principal surface of the specimen supporting film, and for radiating a characteristic X-ray in a soft X-ray region upon irradiation with charged particles; and a specimen adsorption film (12) which is a metal film provided on another principal surface of the specimen supporting film (11), and which fixes by adsorption a specimen (1) to be observed. Since a protein which is a constitutive substance of a biological specimen has a characteristic to easily adsorb to a metallic ion, a specimen adsorption film (12) is formed on one principal surface of the specimen supporting film (11) so that an observation specimen adsorbs thereto.