摘要:
The present invention causes an asynchronous remote copy to work together with storage clustering technology. A host computer program for controlling the asynchronous remote copy carries out an asynchronous remote copy pair operation by asynchronously working together with a switchover instruction of a storage clustering control program that performs a host write-destination volume switchover in a storage clustering environment.
摘要:
A computer system in an embodiment comprises a storage apparatus, a host computer, and a copy control program. The storage apparatus performs copy operations of volumes allocated to a guest OS of the host computer. The copy control program obtains volume information of the guest OS from a VM control program at a given time. The control program compares the information with previous volume information of the guest OS and performs volume copy control for the guest OS in accordance with the comparison result. This process achieve appropriate copy operations even if the association relationship between the guest OS and volumes is changed during system operation.
摘要:
In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.
摘要:
A semiconductor memory device includes a plurality of banks, each of which is constituted of a plurality of memory cell arrays that are aligned in series in the longitudinal direction, wherein each memory cell array includes a plurality of memory cells, and wherein memory cell arrays of banks are collectively aggregated into a plurality of blocks, each of which includes memory cell arrays aligned in the perpendicular direction, in connection with a plurality of DQ pads. DQ pads are arranged in proximity to blocks. Substantially the same distance is set between memory cells and DQ pads so as to reduce dispersions in access times with respect to all DQ pads, thus achieving high-speed access in the semiconductor memory device. The wiring region of IO lines is reduced in the center area of the chip.
摘要:
A moving image encoding method of encoding a moving image while switching between variable-length encoding schemes. In this method, a continuous unit to be continuously reproduced is determined (S5201), a stream is generated by encoding the moving image without switching between variable-length encoding schemes in the continuous unit (S5202), and management information is generated that includes a first flag information indicating that a variable-length encoding scheme is fixed in the continuous unit (S5204, and S5205).
摘要:
A semiconductor device that includes a plurality of memory cell arrays, a plurality of ports, a plurality of internal address generating circuits, and a controller. The plurality of internal address generating circuits may generate first and second internal addresses of first and second memory cell arrays of the plurality of memory cell arrays. The first internal address may designate a first area of the first memory cell array. The second internal address may designate a second area of the second memory cell array. The controller reads a series of data from the first area sequentially and writes the series of read data into the second area sequentially without transferring the series of read data to the plurality of ports.
摘要:
In a memory module including a plurality of DRAM chips which transmit/receive a system data signal with a predetermined data width and at a transfer rate and which transmit/receive an internal data signal having a larger data width and a lower transfer rate as compared with the system data signal, the transfer rate of the system data signal is restricted. Current consumption in DRAMs constituting the memory module is large, hindering speed increases. For this memory module, a plurality of DRAM chips are stacked on an IO chip. Each DRAM chip is connected to the IO chip by a through electrode, and includes a constitution for mutually converting the system data signal and the internal data signal in each DRAM chip by the IO chip. Therefore, wiring between the DRAM chips can be shortened, and DLL having a large current consumption may be disposed only on the IO chip.
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.
摘要:
A demultiplexing apparatus includes a data obtainment unit to obtain the MP4 file data, and a decoding unit to demultiplex the MP4 file data obtained by the data obtainment unit into pairs of a moov and a mdat and pairs of a moof and a mdat, and decode those pairs pair-by-pair. A content duration specification unit specifies the content total duration based on the content total duration information contained in the moov of the MP4 file data obtained by the data obtainment unit and a playback unit displays the content total duration specified by the content duration specification unit.
摘要:
A self-refresh timer circuit for generating a timer period for controlling self-refresh operation of a semiconductor memory device comprising: a temperature-dependent voltage source for outputting a voltage having a temperature dependency based on a diode characteristic; a control current generating circuit for applying an output voltage of the temperature-dependent voltage source to a temperature detecting device having a diode characteristic and for generating a control current having a magnitude in proportion to a current flowing through the temperature detecting device; and a timer period generating circuit for generating a timer period in inverse proportion to the magnitude of the control current.