利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

107 条记录 (耗时 0.036 秒)

    SEMICONDUCTOR DEVICE
    91.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100187604A1

    公开(公告)日：2010-07-29

    申请号：US12692527

    申请日：2010-01-22

    申请人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    发明人： SYOTARO ONO ,  Wataru Saito ,  Nana Hatano ,  Hiroshi Ohta ,  Miho Watanabe

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/1095 ,  H01L29/66712 ,  H01L29/7397

    摘要： A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor region of the first conductivity type on the semiconductor substrate, and a plurality of second semiconductor regions of a second conductivity type disposed separately in the first semiconductor region. A difference between a charge quantity expressed by an integral value of a net activated doping concentration in the second semiconductor regions in the surface direction of the semiconductor substrate and a charge quantity expressed by an integral value of a net activated doping concentration in the first semiconductor region in the surface direction of the semiconductor substrate is always a positive quantity and becomes larger from the depth of the first junction plane to a depth of a second junction plane on an opposite side from the first junction plane.

    摘要翻译： 半导体器件包括第一导电类型的半导体衬底，半导体衬底上的第一导电类型的第一半导体区域和分开设置在第一半导体区域中的多个第二导电类型的第二半导体区域。 由半导体衬底的表面方向上的第二半导体区域中的净活化掺杂浓度的积分值表示的电荷量与由第一半导体区域中的净活化掺杂浓度的积分值表示的电荷量之间的差异 在半导体基板的表面方向总是为正量，并且从第一接合面的深度到与第一接合面相反的一侧的第二接合面的深度变得更大。

    Electrode for electrochemical measurement
    92.
    发明授权
    Electrode for electrochemical measurement 失效
    电极用于电化学测量

    公开(公告)号：US07573186B2

    公开(公告)日：2009-08-11

    申请号：US10863732

    申请日：2004-06-09

    申请人： Taishi Shigematsu ,  Miho Watanabe ,  Chikara Manabe ,  Hiroyuki Watanabe

    发明人： Taishi Shigematsu ,  Miho Watanabe ,  Chikara Manabe ,  Hiroyuki Watanabe

    IPC分类号： H01J1/02 ,  H01B1/00 ,  C08F220/04

    CPC分类号： B82Y15/00 ,  B82Y30/00 ,  G01N27/308

    摘要： The present invention provides an electrode for electrochemical measurement including a carbon nanotube, a catalyst causing a specific chemical reaction, and an insulator in which the carbon nanotube and the catalyst are embedded, wherein a part of the catalyst is exposed at the surface of the insulator and a part of the carbon nanotube is exposed at the surface of the insulator to form an electoconductive portion, or wherein a part of the catalyst is exposed at the surface of the insulator, and a part of the carbon nanotube is electrically connected to the exposed catalyst to form an electoconductive portion.

    摘要翻译： 本发明提供一种用于电化学测量的电极，包括碳纳米管，引起特定化学反应的催化剂，以及嵌入有碳纳米管和催化剂的绝缘体，其中一部分催化剂在绝缘体的表面露出 并且所述碳纳米管的一部分在所述绝缘体的表面露出以形成电导体部分，或者其中所述催化剂的一部分在所述绝缘体的表面露出，并且所述碳纳米管的一部分与所述暴露的 催化剂形成电导电部分。

    Fluorescent lamp and its manufacturing method, and illuminating apparatus
    95.
    发明申请
    Fluorescent lamp and its manufacturing method, and illuminating apparatus 失效
    荧光灯及其制造方法以及照明装置

    公开(公告)号：US20060164000A1

    公开(公告)日：2006-07-27

    申请号：US10526046

    申请日：2003-09-01

    申请人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

    发明人： Kiyoshi Nishimura ,  Miho Watanabe ,  Yusuke Shibahara ,  Kiyoshi Ootani ,  Ichiro Yamada ,  Takashi Yorifuji ,  Naoyuki Toda ,  Hajime Oono ,  Kazuo Egawa ,  Masahiko Yoshida

    IPC分类号： H01J1/62 ,  H01J63/04

    CPC分类号： H01J61/307 ,  H01J9/247 ,  H01J61/30 ,  H01J61/322

    摘要： A fluorescent lamp 1 comprises: a bulb 2 formed by heating bent-portion-formation preordination portions of a single straight-tube-shaped bulb 2a having an external tube diameter of 12 to 20 mm and a tube length of 800 to 2500 mm, forming a plurality of bent portions 2c and straight tube portions 2b adjacent to the bent portions 2c by bending processing, such that the straight portions 2b are disposed generally within the same plane by way of the bent portions 2c, forming in close proximity a pair of end portions 2d and 2d with electrodes 5 and 5 sealed in so as to form a single discharge path through the straight tube portions 2b and bent portions 2c, forming a phosphor layer 4 on the inner face of the bulb, and sealing a discharge medium including mercury; and a base 6 provided on the end portions 2d and 2d of the bulb 2; whereby thermal deterioration of the phosphor layer 4 formed at the straight tube portions 2b is reduced so deterioration of the initial light flux is suppressed, allowing lighting at higher efficiency. According to the above configuration, a fluorescent lamp which is compact and capable of light with high efficiency, and with improved light output properties, and a light fixture using this fluorescent lamp, can be provided.

    摘要翻译： 荧光灯1包括：灯管2，其通过加热具有12至20mm的外管直径和800至2500mm的管长的单个直管状灯泡2a的弯曲部形成前置部分而形成， 通过弯曲加工形成与弯曲部分2c相邻的多个弯曲部分2c和直管部分2b，使得直线部分2b通过弯曲部分2c大致设置在同一平面内，形成在 靠近一对端部2d和2d，其中电极5和5被密封以便通过直管部分2b和弯曲部分2c形成单个放电路径，在内表面上形成荧光体层4 灯泡，并密封包括汞的放电介质; 以及设置在灯泡2的端部2d和2d上的基座6; 由此，形成在直管部2b处的荧光体层4的热劣化减少，从而抑制初始光通量的劣化，能够以更高的效率照明。 根据上述结构，可以提供一种紧凑且能够高效率并且具有改善的光输出性能的荧光灯和使用该荧光灯的灯具。

    Semiconductor device
    97.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08829608B2

    公开(公告)日：2014-09-09

    申请号：US13051987

    申请日：2011-03-18

    申请人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    发明人： Wataru Saito ,  Syotaro Ono ,  Shunji Taniuchi ,  Miho Watanabe ,  Hiroaki Yamashita

    IPC分类号： H01L29/78

    CPC分类号： H01L29/7813 ,  H01L29/0865 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42372 ,  H01L29/66734

    摘要： According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of the first conductivity type, a third semiconductor layer of a second conductivity type, a fourth semiconductor layer of the second conductivity type, a fifth semiconductor layer of the first conductivity type, a control electrode, a first main electrode, a second main electrode, and a sixth semiconductor layer of the first conductivity type. The second semiconductor layer and the third semiconductor layer are alternately provided on the first semiconductor layer in a direction substantially parallel to a major surface of the first semiconductor layer. The fourth semiconductor layer is provided on the second semiconductor layer and the third semiconductor layer. The fifth semiconductor layer is selectively provided on a surface of the fourth semiconductor layer. The control electrode is provided in a trench via an insulating film. The trench penetrates through the fourth semiconductor layer from a surface of the fifth semiconductor layer and is in contact with the second semiconductor layer. The first main electrode is connected to the first semiconductor layer. The second main electrode is connected to the fourth semiconductor layer and the fifth semiconductor layer. The sixth semiconductor layer is provided between the fourth semiconductor layer and the second semiconductor layer. An impurity concentration of the sixth semiconductor layer is higher than an impurity concentration of the second semiconductor layer.

    摘要翻译： 根据一个实施例，半导体器件包括第一导电类型的第一半导体层，第一导电类型的第二半导体层，第二导电类型的第三半导体层，第二导电类型的第四半导体层， 第一导电类型的第五半导体层，第一导电类型的控制电极，第一主电极，第二主电极和第六半导体层。 第二半导体层和第三半导体层在与第一半导体层的主表面大致平行的方向上交替地设置在第一半导体层上。 第四半导体层设置在第二半导体层和第三半导体层上。 第五半导体层选择性地设置在第四半导体层的表面上。 控制电极通过绝缘膜设置在沟槽中。 沟槽从第五半导体层的表面穿过第四半导体层并且与第二半导体层接触。 第一主电极连接到第一半导体层。 第二主电极连接到第四半导体层和第五半导体层。 第六半导体层设置在第四半导体层和第二半导体层之间。 第六半导体层的杂质浓度高于第二半导体层的杂质浓度。

    Power semiconductor device and method for manufacturing same
    98.
    发明授权
    Power semiconductor device and method for manufacturing same 失效
    功率半导体器件及其制造方法

    公开(公告)号：US08610210B2

    公开(公告)日：2013-12-17

    申请号：US12840201

    申请日：2010-07-20

    申请人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    发明人： Hiroshi Ohta ,  Yasuto Sumi ,  Kiyoshi Kimura ,  Wataru Sekine ,  Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    IPC分类号： H01L29/66

    CPC分类号： H01L29/66712 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/7811

    摘要： According to one embodiment, a power semiconductor device includes a first semiconductor layer, and first, second and third semiconductor regions. The first semiconductor layer has a first conductivity type. The first semiconductor regions have a second conductivity type, and are formed with periodicity in a lateral direction in a second semiconductor layer of the first conductivity type. The second semiconductor layer is provided on a major surface of the first semiconductor layer in a device portion with a main current path formed in a vertical direction generally perpendicular to the major surface and in a terminal portion provided around the device portion. The second semiconductor region has the first conductivity type and is a portion of the second semiconductor layer sandwiched between adjacent ones of the first semiconductor regions. The third semiconductor regions have the second conductivity type and are provided below the first semiconductor regions in the terminal portion.

    摘要翻译： 根据一个实施例，功率半导体器件包括第一半导体层以及第一，第二和第三半导体区域。 第一半导体层具有第一导电类型。 第一半导体区域具有第二导电类型，并且在第一导电类型的第二半导体层中在横向方向上形成周期性。 第二半导体层设置在器件部分的第一半导体层的主表面上，其主电流通道形成在大体上垂直于主表面的垂直方向上，以及设置在器件部分周围的端子部分中。 第二半导体区域具有第一导电类型，并且是夹在相邻的第一半导体区域中的第二半导体层的一部分。 第三半导体区域具有第二导电类型并且设置在端子部分中的第一半导体区域的下方。

    Power semiconductor device
    99.
    发明授权
    Power semiconductor device 有权
    功率半导体器件

    公开(公告)号：US08188521B2

    公开(公告)日：2012-05-29

    申请号：US12728823

    申请日：2010-03-22

    申请人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    发明人： Wataru Saito ,  Syotaro Ono ,  Munehisa Yabuzaki ,  Nana Hatano ,  Miho Watanabe

    IPC分类号： H01L29/739 ,  H01L29/78 ,  H01L29/08

    CPC分类号： H01L29/7802 ,  H01L29/0619 ,  H01L29/0626 ,  H01L29/0634 ,  H01L29/0657 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7828

    摘要： A power semiconductor device has semiconductor layers, including: first layer of first type; second and third layers respectively of first and second types alternately on the first layer; fourth layers of second type on the third layers; fifth layers of first type on the fourth layer; sixth and seventh layers respectively of second and first types alternately on the second and third layers; a first electrode connected to the first layer; an insulation film on fourth, sixth, and seventh layers; a second electrode on fourth, sixth, and seventh layers via the insulation film; and a third electrode joined to fourth and fifth layers, wherein the sixth layers are connected to the fourth layers and one of the third layers between two fourth layers, and an impurity concentration of the third layers below the sixth layers is higher than that of the third layers under the fourth layers.

    摘要翻译： 功率半导体器件具有半导体层，包括：第一层第一层; 第一和第二类型的第二和第三层交替地在第一层上; 第三层第四层第四层; 第四层第五层第一层; 第二层和第三层的第六层和第七层交替地在第二层和第三层上; 连接到第一层的第一电极; 第四层，第六层和第七层的绝缘膜; 经由绝缘膜的第四，第六和第七层上的第二电极; 以及连接到第四和第五层的第三电极，其中第六层连接到第四层，第二层之间的第三层之间的第二层之间的第二层和第三层之间的第三层的杂质浓度高于第六层的第三层 第四层第三层。