Dynamic random access memory device with long retention and operating method thereof

    公开(公告)号:US11922988B2

    公开(公告)日:2024-03-05

    申请号:US17674301

    申请日:2022-02-17

    CPC classification number: G11C11/404 G11C11/4096

    Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

Patent Agency Ranking