THREE DIMENSIONAL INTEGRATED CIRCUITS
    104.
    发明申请
    THREE DIMENSIONAL INTEGRATED CIRCUITS 有权
    三维集成电路

    公开(公告)号:US20160134288A1

    公开(公告)日:2016-05-12

    申请号:US14949679

    申请日:2015-11-23

    Abstract: A three-dimensional semiconductor device, comprising: a first module layer having a plurality of circuit blocks; and a second module layer positioned substantially above the first module layer, including a plurality of configuration circuits; and a third module layer positioned substantially above the second module layer, including a plurality of circuit blocks; wherein, the configuration circuits in the second module control a portion of the circuit blocks in the first and third module layers.

    Abstract translation: 一种三维半导体器件,包括:具有多个电路块的第一模块层; 以及第二模块层,其基本上位于所述第一模块层的上方,包括多个配置电路; 以及第三模块层,其基本上位于所述第二模块层的上方,包括多个电路块; 其中,第二模块中的配置电路控制第一和第三模块层中的电路块的一部分。

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