Dynamic random access memory device with long retention and operating method thereof

    公开(公告)号:US11922988B2

    公开(公告)日:2024-03-05

    申请号:US17674301

    申请日:2022-02-17

    CPC classification number: G11C11/404 G11C11/4096

    Abstract: Disclosed are a DRAM device capable of storing charges for a long time and an operating method thereof. According to an embodiment, a DRAM device includes a channel region formed on a substrate, a gate insulating film region formed on the channel region, a floating gate region formed on the gate insulating film region, a transition layer region formed on the floating gate region, and a control gate region formed on the transition layer region and generating a potential difference with the floating gate region in response to a fact that a potential that is not less than a reference potential is applied and releasing at least one charge stored in the floating gate region or storing the at least one charge into the floating gate region, by generating a transition current due to the potential difference.

    INJECTOR, COMBUSTOR COMPRISING SAME, AND GAS TURBINE COMPRISING SAME

    公开(公告)号:US20240027068A1

    公开(公告)日:2024-01-25

    申请号:US18255861

    申请日:2022-08-30

    CPC classification number: F23R3/286

    Abstract: The present invention relates to an injector, a combustor comprising same, and a gas turbine comprising same. The injector comprises: an injector body; and a slit portion formed through the injector body in a reference direction, wherein the slit portion comprises: a first slit portion having a shape extending along the circumferential direction of a virtual reference circle having a virtual reference axis extending in the reference direction as a center thereof; and a second slit portion having a shape extending in the radial direction of the reference circle.

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