公开(公告)号：US20230160057A1

公开(公告)日：2023-05-25

申请号：US17989760

申请日：2022-11-18

Applicant: ASM IP Holding B.V.

Inventor： Jiyeon Kim ,  YoungChol Byun ,  Petri Raisanen ,  Dong Li ,  Eric James Shero ,  Yasiel Cabrera ,  Arul Vigneswar Ravichandran ,  Eric Christopher Stevens ,  Paul Ma

IPC: C23C16/14 ,  H01L21/3205 ,  H01L21/67 ,  H01L21/768

CPC classification number: C23C16/14 ,  H01L21/32051 ,  H01L21/67103 ,  H01L21/76837

Abstract: Molybdenum (Mo) metal-on-metal (MoM) deposition methods for providing true bottom-up fill in vias and/or other gap features in device structures. These device structures contain metal at the bottom surface and have dielectric sidewalls. The deposition process provides molybdenum growth only, in some cases, on the metal film/layer to provide a selective process that can be called a metal-on-metal (MoM) process. The Mo MoM deposition process described herein are not limited to thin films (e.g., films less than 50 Å) and can be used to deposit thicker films (e.g., greater than 50 Å in some cases and greater than 200 Å in other useful cases) on metal surfaces while no, or substantially no, deposition is found on dielectric surfaces.

公开(公告)号：US11492701B2

公开(公告)日：2022-11-08

申请号：US16813527

申请日：2020-03-09

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Jereld Lee Winkler ,  Eric James Shero ,  Todd Robert Dunn ,  Carl Louis White

IPC: C23C16/44 ,  H01L21/67 ,  C23C16/455 ,  C23C16/54

Abstract: Herein disclosed are systems and methods related to semiconductor processing device including a manifold including a bore configured to deliver a gas to a reaction chamber, the manifold including a first block mounted to a second block, the first and second mounted blocks cooperating to at least partially define the bore. A supply channel provides fluid communication between a gas source and the bore, and the supply channel is disposed at least partially in the second block. A metallic seal is disposed about the bore at an interface between the first and second block. Advantageously, the metallic seal improves sealing between the interface between the first block and the second block.

公开(公告)号：US20220351958A1

公开(公告)日：2022-11-03

申请号：US17859929

申请日：2022-07-07

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  C23C16/34 ,  H01L21/687

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20220277937A1

公开(公告)日：2022-09-01

申请号：US17744902

申请日：2022-05-16

Applicant: ASM IP Holding B.V.

Inventor： Suvi Haukka ,  Eric James Shero ,  Fred Alokozai ,  Dong Li ,  Jereld Lee Winkler ,  Xichong Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/32

Abstract: A system and method for treating a deposition reactor are disclosed. The system and method remove or mitigate formation of residue in a gas-phase reactor used to deposit doped metal films, such as aluminum-doped titanium carbide films or aluminum-doped tantalum carbide films. The method includes a step of exposing a reaction chamber to a treatment reactant that mitigates formation of species that lead to residue formation.

公开(公告)号：US11424119B2

公开(公告)日：2022-08-23

申请号：US16801910

申请日：2020-02-26

Applicant: ASM IP Holding B.V.

Inventor： Eric James Shero ,  Paul Ma ,  Bed Prasad Sharma ,  Shankar Swaminathan

IPC: H01L21/02 ,  C23C16/34 ,  H01J37/32 ,  H01L21/768 ,  C23C16/455 ,  H01L21/687 ,  H01L21/67

Abstract: A method for selectively depositing silicon nitride on a first material relative to a second material is disclosed. An exemplary method includes treating the first material, and then selectively depositing a layer comprising silicon nitride on the second material relative to the first material. Exemplary methods can further include treating the deposited silicon nitride.

公开(公告)号：US20220084831A1

公开(公告)日：2022-03-17

申请号：US17470426

申请日：2021-09-09

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero

IPC: H01L21/285 ,  C23C16/34 ,  C23C16/44 ,  C23C16/56 ,  C23C16/455 ,  C23C16/04

Abstract: Vapor deposition processes are provided for bottom up filling of trenches and other structures with metal nitrides such as vanadium nitride and titanium nitride. In some embodiments, VCl4 can be used as an etchant source in the deposition processes. The reaction conditions are selected such that some Cl2 forms in the reaction space and preferentially etches deposited metal nitride at the upper surfaces of a trench or other three-dimensional feature on a substrate. The self-etching during the deposition process facilitates a bottom up filling of the feature and may reduce or eliminate the formation of seams or voids.

公开(公告)号：US20210371978A1

公开(公告)日：2021-12-02

申请号：US17329829

申请日：2021-05-25

Applicant: ASM IP HOLDING B.V.

Inventor： Eric James Shero ,  Dieter Pierreux ,  Bert Jongbloed ,  Werner Knaepen ,  Charles Dezelah ,  Qi Xie ,  Petri Raisanen ,  Hannu A. Huotari ,  Paul Ma ,  Vamsi Paruchuri

IPC: C23C16/455 ,  C23C16/34

Abstract: Direct liquid injection systems and vapor deposition systems including direct liquid injection systems are disclosed. Exemplary direct liquid injection systems and related vapor deposition systems can be configured for forming vanadium containing layer on a substrate by cyclical deposition processes.

公开(公告)号：US20210249263A1

公开(公告)日：2021-08-12

申请号：US17170742

申请日：2021-02-08

Applicant: ASM IP HOLDING B.V.

Inventor： Jiyeon Kim ,  Petri Raisanen ,  Sol Kim ,  Ying-Shen Kuo ,  Michael Schmotzer ,  Eric James Shero ,  Paul Ma

IPC: H01L21/02 ,  H01L21/768

Abstract: Methods for forming hafnium oxide within a three-dimensional structure, such as in a high aspect ratio hole, are provided. The methods may include depositing a first hafnium-containing material, such as hafnium nitride or hafnium carbide, in a three-dimensional structure and subsequently converting the first hafnium-containing material to a second hafnium-containing material comprising hafnium oxide by exposing the first hafnium-containing material to an oxygen reactant. The volume of the second hafnium-containing material may be greater than that of the first hafnium-containing material. Voids or seams formed during the deposition of the first hafnium-containing material in the three-dimensional structure may be filled by the expanded material after exposing the first hafnium-containing material to the oxygen reactant. Thus, the three-dimensional structure, such as a high aspect ratio hole, can be filled with hafnium oxide substantially free of voids or seams.

公开(公告)号：US20210118668A1

公开(公告)日：2021-04-22

申请号：US17074887

申请日：2020-10-20

Applicant: ASM IP HOLDING B.V.

Inventor： Dinkar Nandwana ,  Eric James Shero ,  Carl Louis White ,  Todd Robert Dunn ,  William George Petro ,  Jereld Lee Winkler ,  Aniket Chitale

IPC: H01L21/02 ,  C23C16/455

Abstract: The present disclosure pertains to embodiments of a semiconductor deposition reactor manifold and methods of using the semiconductor deposition reactor manifold which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The semiconductor deposition reactor manifold has a bore, a first supply channel, and a second supply channel. Advantageously, the first supply channel and the second supply channel merge with the bore in an offset fashion which leads to reduced cross-contamination within the supply channels.

公开(公告)号：US20210079527A1

公开(公告)日：2021-03-18

申请号：US17011828

申请日：2020-09-03

Applicant: ASM IP HOLDING B.V.

Inventor： Carl Louis White ,  Eric James Shero ,  Kyle Fondurulia

IPC: C23C16/48 ,  C23C16/52 ,  C23C16/44

Abstract: Systems and methods related to temperature zone control systems can include a reactant source cabinet that is configured to be at least partially evacuated, a vessel base that is configured to hold solid source chemical reactant therein, and a lid that is coupled to a distal portion of the vessel base. The lid may include one or more lid valves. The system may further include a plurality of gas panel valves that are configured to deliver gas from a gas source to the vessel. The system may include a heating element that is configured to heat the one or more lid valves. The system may include a heat shield, a first portion of which is disposed between the one or more lid valves and the vessel base. A second portion of the heat shield may be disposed between the first heating element and the plurality of gas panel valves.