公开(公告)号：US06580597B2

公开(公告)日：2003-06-17

申请号：US10100186

申请日：2002-03-19

申请人： Akihiko Kanouda ,  Kenichi Onda ,  Norikazu Tokunaga ,  Mikiya Nohara ,  Ryouhei Saga ,  Morinobu Endo

发明人： Akihiko Kanouda ,  Kenichi Onda ,  Norikazu Tokunaga ,  Mikiya Nohara ,  Ryouhei Saga ,  Morinobu Endo

IPC分类号： H01G900

CPC分类号： H02M3/00 ,  H01L2924/15311 ,  H01L2924/19105 ,  H01L2924/19106

摘要： A voltage regulator module includes a power supply circuit for supplying power to an integrated circuit, the power supply circuit including semiconductor switching devices and a drive circuit for driving the semiconductor switching devices; and charge storage means for smoothing an output of the power supply circuit, wherein charge storage unit having a smoothing capacitor includes an electric double-layer capacitor, wherein the electric double-layer capacitor includes a plurality of positive electrode terminals and a plurality of negative electrode terminals, and wherein the plurality of positive electrode terminals and the plurality of negative electrode terminals are disposed on a surface identical to a surface of the electric double-layer capacitor.

摘要翻译： 电压调节器模块包括用于向集成电路供电的电源电路，所述电源电路包括半导体开关器件和用于驱动半导体开关器件的驱动电路; 以及用于平滑电源电路的输出的电荷存储装置，其中具有平滑电容器的电荷存储单元包括双电层电容器，其中所述双电层电容器包括多个正电极端子和多个负电极 端子，并且其中所述多个正极端子和所述多个负极端子设置在与所述双电层电容器的表面相同的表面上。

公开(公告)号：US5253156A

公开(公告)日：1993-10-12

申请号：US647415

申请日：1991-01-29

申请人： Naoki Sakurai ,  Mutsuhiro Mori ,  Hidetoshi Arakawa ,  Kenichi Onda ,  Hideki Miyazaki ,  Akihiko Kanouda

发明人： Naoki Sakurai ,  Mutsuhiro Mori ,  Hidetoshi Arakawa ,  Kenichi Onda ,  Hideki Miyazaki ,  Akihiko Kanouda

IPC分类号： H01L21/762 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/06 ,  H01L29/739 ,  H01L29/872 ,  H02M7/00 ,  H02M7/5387 ,  H02P6/08 ,  H02M3/335 ,  H02M7/521

CPC分类号： H01L29/0696 ,  H01L21/76297 ,  H01L27/0635 ,  H01L29/0692 ,  H01L29/7394 ,  H01L29/7398 ,  H01L29/872 ,  H02M7/003 ,  H02M7/5387 ,  H02P6/085

摘要： A semiconductor integrated circuit unit, suitable for the control of a motor, has an integrated structure within the same semiconductor substrate, comprising an inverter circuit, drive circuits for driving the switching elements of the inverter circuit, an internal power source circuit for supplying power to the drive circuits which drive the upper arm side of the inverter circuit, and a logical circuit for transmitting a signal to the drive circuits which drive the upper arm side of the inverter circuit.

摘要翻译： 适用于电动机控制的半导体集成电路单元具有在同一半导体衬底内的集成结构，包括逆变器电路，用于驱动逆变器电路的开关元件的驱动电路，用于向 驱动逆变器电路的上臂侧的驱动电路，以及用于向驱动逆变器电路的上臂侧的驱动电路发送信号的逻辑电路。

公开(公告)号：US5057721A

公开(公告)日：1991-10-15

申请号：US540269

申请日：1990-06-19

申请人： Hideki Miyazaki ,  Akihiko Kanouda ,  Kozo Watanabe ,  Kenichi Onda ,  Yasuo Matsuda

发明人： Hideki Miyazaki ,  Akihiko Kanouda ,  Kozo Watanabe ,  Kenichi Onda ,  Yasuo Matsuda

IPC分类号： H01L21/8234 ,  G05F3/24 ,  H01L27/088 ,  H03K5/02 ,  H03K17/04

CPC分类号： G05F3/24

摘要： The switching of the positive (or pullup power) and negative (or pulldown power) semiconductor elements, are controlled by driving circuits which are in turn controlled by level shift circuits which have a first current control circuit and a second current control circuit coupled in parallel and this parallel connection is coupled in series with the control N-channel MOSFET of a current mirror circuit in a circuit loop arrangement with a control power supply. The first and second current control circuits are responsive to first and second control pulses of pulse widths t.sub.1 and t.sub.1 +t.sub.2, in accordance with a driving signal such that the first current control circuit supplies a first current level to the control N-channel MOSFET during the first time period t.sub.1 and the second current control circuit supplies a second current level, smaller than that of the first current level, thereto for a predetermined time period t.sub.1 +t.sub.2 thereby resulting in a current flow through the controlled N-channel MOSFET of the current mirror circuit of a current value corresponding to the sum of the first and second current levels. The controlled N-channel MOSFET, providing ON/OFF control of a P channel MOSFET, is disposed in a second circuit loop which is powered by a high voltage power supply. This P-channel MOSFET, coupled to the high voltage power supply, supplies an output signal to a load in response to the current flowing through the controlled N-channel MOSFET.

摘要翻译： 正（或上拉功率）和负（或下拉功率）半导体元件的切换由驱动电路控制，驱动电路又由具有并联耦合的第一电流控制电路和第二电流控制电路的电平移位电路控制 并联电路与电流反射镜电路的控制N沟道MOSFET串联，并与控制电源进行电路回路布置。 第一和第二电流控制电路根据驱动信号响应脉冲宽度t1和t1 + t2的第一和第二控制脉冲，使得第一电流控制电路在控制N沟道MOSFET期间向控制N沟道MOSFET提供第一电流电平 第一时间段t1和第二电流控制电路提供比第一电流电平小的第二电流电平达预定时间段t1 + t2，从而导致电流流过控制的N沟道MOSFET的电流 电流镜像电路，其电流值对应于第一和第二电流电平的和。 提供P沟道MOSFET的ON / OFF控制的受控N沟道MOSFET设置在由高压电源供电的第二电路回路中。 耦合到高压电源的P沟道MOSFET响应于流过受控N沟道MOSFET的电流向负载提供输出信号。